Strain-induced effects on the optoelectronic properties of ZrSe<sub>2</sub>/HfSe<sub>2</sub> heterostructures.

Wei, Xingbin; Yang, Lu; Sun, Shihang; Zhao, Yanshen; Liu, Huaidong

Strain-induced effects on the optoelectronic properties of ZrSe₂/HfSe₂ heterostructures.

Wei, Xingbin; Yang, Lu; Sun, Shihang; Zhao, Yanshen; Liu, Huaidong.

Afiliación

Wei X; School of Architecture and Civil Engineering, Shenyang University of Technology, Shenyang, 110870, China.
Yang L; School of Architecture and Civil Engineering, Shenyang University of Technology, Shenyang, 110870, China. yanglu515@163.com.
Sun S; School of Architecture and Civil Engineering, Shenyang University of Technology, Shenyang, 110870, China.
Zhao Y; School of Architecture and Civil Engineering, Shenyang University of Technology, Shenyang, 110870, China.
Liu H; School of Architecture and Civil Engineering, Shenyang University of Technology, Shenyang, 110870, China.

J Mol Model ; 30(1): 3, 2023 Dec 11.

Article en En | MEDLINE | ID: mdl-38082191

Palabras clave

Electronic structure; Optical properties; Strain; ZrSe2/HfSe2 heterojunction

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Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: J Mol Model Asunto de la revista: BIOLOGIA MOLECULAR Año: 2023 Tipo del documento: Article País de afiliación: China

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