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Memristors with Tunable Volatility for Reconfigurable Neuromorphic Computing.
Woo, Kyung Seok; Park, Hyungjun; Ghenzi, Nestor; Talin, A Alec; Jeong, Taeyoung; Choi, Jung-Hae; Oh, Sangheon; Jang, Yoon Ho; Han, Janguk; Williams, R Stanley; Kumar, Suhas; Hwang, Cheol Seong.
Afiliación
  • Woo KS; Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 08826, Republic of Korea.
  • Park H; Sandia National Laboratories, Livermore, California 94551, United States.
  • Ghenzi N; Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843, United States.
  • Talin AA; Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
  • Jeong T; Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 08826, Republic of Korea.
  • Choi JH; Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 08826, Republic of Korea.
  • Oh S; Universidad de Avellaneda UNDAV and Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Mario Bravo 1460, Avellaneda, Buenos Aires 1872, Argentina.
  • Jang YH; Sandia National Laboratories, Livermore, California 94551, United States.
  • Han J; Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 08826, Republic of Korea.
  • Williams RS; Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea.
  • Kumar S; Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea.
  • Hwang CS; Sandia National Laboratories, Livermore, California 94551, United States.
ACS Nano ; 18(26): 17007-17017, 2024 Jul 02.
Article en En | MEDLINE | ID: mdl-38952324
ABSTRACT
Neuromorphic computing promises an energy-efficient alternative to traditional digital processors in handling data-heavy tasks, primarily driven by the development of both volatile (neuronal) and nonvolatile (synaptic) resistive switches or memristors. However, despite their energy efficiency, memristor-based technologies presently lack functional tunability, thus limiting their competitiveness with arbitrarily programmable (general purpose) digital computers. This work introduces a two-terminal bilayer memristor, which can be tuned among neuronal, synaptic, and hybrid behaviors. The varying behaviors are accessed via facile control over the filament formed within the memristor, enabled by the interplay between the two active ionic species (oxygen vacancies and metal cations). This solution is unlike single-species ion migration employed in most other memristors, which makes their behavior difficult to control. By reconfiguring a single crossbar array of hybrid memristors, two different applications that usually require distinct types of devices are demonstrated - reprogrammable heterogeneous reservoir computing and arbitrary non-Euclidean graph networks. Thus, this work outlines a potential path toward functionally reconfigurable postdigital computers.
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Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2024 Tipo del documento: Article

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2024 Tipo del documento: Article