Advancements and challenges in strained group-IV-based optoelectronic materials stressed by ion beam treatment.
J Phys Condens Matter
; 36(43)2024 Jul 26.
Article
en En
| MEDLINE
| ID: mdl-39058285
ABSTRACT
In this perspective article, we discuss the application of ion implantation to manipulate strain (by either neutralizing or inducing compressive or tensile states) in suspended thin films. Emphasizing the pressing need for a high-mobility silicon-compatible transistor or a direct bandgap group-IV semiconductor that is compatible with complementary metal-oxide-semiconductor technology, we underscore the distinctive features of different methods of ion beam-induced alteration of material morphology. The article examines the precautions needed during experimental procedures and data analysis and explores routes for potential scalable adoption by the semiconductor industry. Finally, we briefly discuss how this highly controllable strain-inducing technique can facilitate enhanced manipulation of impurity-based spin quantum bits (qubits).
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1
Base de datos:
MEDLINE
Idioma:
En
Revista:
J Phys Condens Matter
/
J. phys. condens. matter
/
Journal of physics.Condensed matter (Print)
Asunto de la revista:
BIOFISICA
Año:
2024
Tipo del documento:
Article
País de afiliación:
Reino Unido