Your browser doesn't support javascript.
loading
Multicolor Fully Light-Modulated Artificial Synapse Based on P-MoSe2/PxOy Heterostructured Memristor.
Li, Yumo; Sun, Hao; Yue, Langchun; Yang, Fengxia; Dong, Xiaofei; Chen, Jianbiao; Zhang, Xuqiang; Chen, Jiangtao; Zhao, Yun; Chen, Kai; Li, Yan.
Afiliación
  • Li Y; Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China.
  • Sun H; Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China.
  • Yue L; Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China.
  • Yang F; Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China.
  • Dong X; Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China.
  • Chen J; Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China.
  • Zhang X; Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China.
  • Chen J; Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China.
  • Zhao Y; Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China.
  • Chen K; Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China.
  • Li Y; Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea.
J Phys Chem Lett ; 15(34): 8752-8758, 2024 Aug 29.
Article en En | MEDLINE | ID: mdl-39163351
ABSTRACT
Developing brain-inspired neuromorphic paradigms is imperative to breaking through the von Neumann bottleneck. The emulation of synaptic functionality has motivated the exploration of optoelectronic memristive devices as high-performance artificial synapses, yet the realization of such a modulatory terminal capable of full light-modulation, especially near-infrared stimuli, remains a challenge. Here, a fully light-modulated synaptic memristor is reported on a P-MoSe2/PxOy heterostructure formed by a facile one-step selenization process. The results demonstrate successful achievement of multiwavelength (visible 470 nm to near-infrared 808 nm) modulated switching operations (reset in 0.21-0.97 V) and diverse synaptic behaviors, including postsynaptic current, paired-pulse facilitation, short- and long-term memory (STM and LTM), and learning-forgetting. Notably, the device can exhibit a 3.42 µA PSC increase under six identical 655 nm stimuli, a 11.90-46.24 µA PSC modulation by changing 808 nm light intensity from 6 to 14 mW/cm2, and a transition from STM to LTM lasting between 2.47 and 4.27 s by a prolonged 808 nm pulse from 1 to 30 s. A novel possible light-induced switching mechanism in such a heterostructure is proposed. Furthermore, brain-like light-stimulated memory behavior and Pavlov's classical conditioning demonstrate the device's capacity for processing complex inputs. The study presents a design toward a multiwavelength modulated artificial visual system for color recognition.

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: J Phys Chem Lett Año: 2024 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: J Phys Chem Lett Año: 2024 Tipo del documento: Article País de afiliación: China