Topological van der Waals Contact for Two-Dimensional Semiconductors.
ACS Nano
; 2024 Sep 12.
Article
en En
| MEDLINE
| ID: mdl-39264283
ABSTRACT
The relentless miniaturization inherent in complementary metal-oxide semiconductor technology has created challenges at the interface of two-dimensional (2D) materials and metal electrodes. These challenges, predominantly stemming from metal-induced gap states (MIGS) and Schottky barrier heights (SBHs), critically impede device performance. This work introduces an innovative implementation of damage-free Sb2Te3 topological van der Waals (T-vdW) contacts, representing an ultimate contact electrode for 2D materials. We successfully fabricate p-type and n-type transistors using monolayer and multilayer WSe2, achieving ultralow SBH (â¼24 meV) and contact resistance (â¼0.71 kΩ·µm). Simulations highlight the role of topological surface states in Sb2Te3, which effectively mitigate the MIGS effect, thereby significantly elevating device efficiency. Our experimental insights revealed the semiohmic behavior of Sb2Te3 T-vdW contacts, with an exceptional photoresponsivity of 716 A/W and rapid response times of approximately 60 µs. The findings presented herein herald topological contacts as a superior alternative to traditional metal contacts, potentially revolutionizing the performance of miniaturized electronic and optoelectronic devices.
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MEDLINE
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ACS Nano
Año:
2024
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Article