RESUMO
Integrated power ICs acting as smart power switches for automotive or industrial applications are often subjected to active thermal cycling. Consequently, they undergo significant self-heating and are prone to various failure mechanisms related to the electro-thermo-mechanical phenomena that take place in the device metallization. In this article a test structure consisting of a lateral DMOS transistor equipped with several integrated sensors is proposed for metallization fatigue assessment. The design of the test structure is presented in detail, alongside with design considerations drawn from the literature and from simulation results. The testing procedure is then described, and experimental results are discussed. The experimental data provided by the integrated sensors correlated with the electro-thermal simulation results indicate the emergence of a failure mechanism and this is later confirmed by failure analysis. Conclusions are further drawn regarding the feasibility of using the proposed integrated sensors for monitoring defects in power ICs.