Measurement of the quantum-confined Stark effect in InAs/In(Ga)As quantum dots with p-doped quantum dot barriers.

The quantum-confined Stark effect in InAs/In(Ga)As quantum dots (QDs) using non-intentionally doped and p-doped QD barriers was investigated to compare their performance for use in optical modulators. The measurements indicate that the doped QD barriers lead to a better figure of merit (FoM), defined as the ratio of the change in absorption Δα for a reverse bias voltage swing to the loss at 1 V α(1 V), FoM=Δα/α (1 V). The improved performance is due to the absence of the ground-state absorption peak and an additional component to the Stark shift. Measurements indicate that p-doping the QD barriers can lead to more than a 3x increase in FoM modulator performance between temperatures of -73 °C to 100 °C when compared with the stack with NIDQD barriers.

1.3 µm wavelength tunable single-mode laser arrays based on slots.

Two twelve-channel arrays based on surface-etched slot gratings, one with non-uniformly spaced slots and another with uniformly spaced slots are presented for laser operation in the O-band. A wavelength tuning range greater than 40 nm, with a side-mode suppression ratio (SMSR) > 40 dB over much of this range and output power greater than 20 mW, was obtained for the array with non-uniform slots over a temperature range of 15 °C - 60 °C. The introduction of multiple slot periods, chosen such that there is minimal overlap among the side reflection peaks, is employed to suppress modes lasing one free spectral range (FSR) from the intended wavelength. The tuning range of the array with uniformly spaced slots, on the other hand, was found to be discontinuous due to mode-hopping to modes one FSR away from the intended lasing mode which are not adequately suppressed. Spectral linewidth was found to vary across devices with the lowest measured linewidths in the range of 2 MHz to 4 MHz.

CMOS compatible all-silicon TM pass polarizer based on highly doped silicon waveguide.

We propose and analyze via simulation a novel approach to implement a complementary metal-oxide-semiconductor compatible and high extinction ratio transverse magnetic pass polarizer on the silicon-on-insulator platform with a 340 nm thick silicon core. The TM-pass polarizer utilizes a highly doped p-silicon waveguide as the transverse hybrid plasmonic waveguide. We observed an extinction ratio of 30.11 dB and an insertion loss of 3.08 dB for a device length of 15 µm. The fabrication process of the proposed TM-pass polarizer is simpler compared to the state-of-the-art since it only uses silicon waveguides and does not require any special material or feature size.

Manipulation of extinction features in frequency combs through the usage of graphene.

Lately, the integration of two-dimensional materials into semiconductor devices has allowed the modification of their effective index by simply applying a modest voltage (between 0 and 3 volts). In this work, we present a device composed of two evanescently coupled silicon microring resonators where both rings have a graphene layer on top. This design is aimed to produce frequency combs with transmission characteristics controlled upon voltage application to the graphene layer. We numerically analyze the device response as a function of the incident wavelength and applied voltage. The results showed a low input intensity (0.6 GW/cm2) needed and a rapid response time (0.1 µs), in comparison to devices controlled by heat injection.

CMOS-compatible multi-band plasmonic TE-pass polarizer.

A CMOS-compatible plasmonic TE-pass polarizer capable of working in the O, E, S, C, L, and U bands is numerically analyzed. The device is based on an integrated hybrid plasmonic waveguide (HPW) with a segmented metal design. The segmented metal will avoid the propagation of the TM mode, confined in the slot of the HPW, while the TE fundamental mode will pass. The TE mode is not affected by the metal segmentation since it is confined in the core of the HPW. The concept of the segmented metal can be exploited in a plasmonic circuit with HPWs as the connecting waveguides between parts of the circuit and in a silicon photonics circuit with strip or slab waveguides connecting the different parts of the circuit. Using 3D FDTD simulations, it is shown that for a length of 5.5 µm the polarization extinction ratios are better than 20 dB and the insertion losses are less than 1.7 dB over all the optical communication bands.

Effective heat dissipation in an adiabatic near-field transducer for HAMR.

To achieve a feasible heat-assisted magnetic recording (HAMR) system, a near-field transducer (NFT) is necessary to strongly focus the optical field to a lateral region measuring tens of nanometres in size. An NFT must deliver sufficient power to the recording medium as well as maintain its structural integrity. The self-heating problem in the NFT causes materials failure that leads to the degradation of the hard disk drive performance. The literature reports NFT structures with physical sizes well below 1 micron which were found to be thermo-mechanically unstable at an elevated temperature. In this paper, we demonstrate an adiabatic NFT to address the central challenge of thermal engineering for a HAMR system. The NFT is formed by an isosceles triangular gold taper plasmonic waveguide with a length of 6 µm and a height of 50 nm. Our study shows that in the full optically and thermally optimized system, the NFT efficiently extracts the incident light from the waveguide core and can improve the shape of the heating source profile for data recording. The most important insight of the thermal performance is that the recording medium can be heated up to 866 K with an input power of 8.5 mW which is above the Curie temperature of the FePt film while maintaining the temperature in the NFT at 390 K without a heat spreader. A very good thermal efficiency of 5.91 is achieved also. The proposed structure is easily fabricated and can potentially reduce the NFT deformation at a high recording temperature making it suitable for practical HAMR application.

Optical and thermal analysis of the light-heat conversion process employing an antenna-based hybrid plasmonic waveguide for HAMR.

We investigate a tapered, hybrid plasmonic waveguide which has previously been proposed as an optically efficient near-field transducer (NFT), or component thereof, in several devices which aim to exploit nanofocused light. We numerically analyze how light is transported through the waveguide and ultimately focused via effective-mode coupling and taper optimization. Crucial dimensional parameters in this optimization process are identified that are not only necessary to achieve maximum optical throughput, but also optimum thermal performance with specific application towards heat-assisted magnetic recording (HAMR). It is shown that existing devices constructed on similar waveguides may benefit from a heat spreader to avoid deformation of the plasmonic element which we achieve with no cost to the optical efficiency. For HAMR, our design is able to surpass many industry requirements in regard to both optical and thermal efficiency using pertinent figure of merits like 8.5% optical efficiency.

Transversely coupled Fabry-Perot resonators with Bragg grating reflectors.

We design and demonstrate Fabry-Perot resonators with transverse coupling using Bragg gratings as reflectors on the silicon-on-insulator (SOI) platform. The effects of tailoring the cavity length and the coupling coefficient of the directional coupler on the spectral characteristics of the device are studied. The fabricated resonators achieved an extinction ratio (ER) of 37.28 dB and a Q-factor of 3356 with an effective cavity length of 110 µm, and an ER of 8.69 dB and a Q-factor of 23642 with a 943 µm effective cavity length. The resonator structure presented here has the highest reported ER on SOI and provides additional degrees of freedom compared to an all-pass ring resonator to tune the spectral characteristics.

Highly fabrication tolerant InP based polarization beam splitter based on p-i-n structure.

In this work, a novel highly fabrication tolerant polarization beam splitter (PBS) is presented on an InP platform. To achieve the splitting, we combine the Pockels effect and the plasma dispersion effect in a symmetric 1x2 Mach-Zehnder interferometer (MZI). One p-i-n phase shifter of the MZI is driven in forward bias to exploit the plasma dispersion effect and modify the phase of both the TE and TM mode. The other arm of the MZI is driven in reverse bias to exploit the Pockels effect which affects only the TE mode. By adjusting the voltages of the two phase shifters, a different interference condition can be set for the TE and the TM modes thereby splitting them at the output of the MZI. By adjusting the voltages, the very tight fabrication tolerances known for fully passive PBS are eased. The experimental results show that an extinction ratio better than 15 dB and an on-chip loss of 3.5 dB over the full C-band (1530-1565nm) are achieved.

Experimental parametric study of 128 Gb/s PAM-4 transmission system using a multi-electrode silicon photonic Mach Zehnder modulator.

We present an experimental study and analysis of a travelling wave series push-pull silicon photonic multi-electrode Mach-Zehnder modulator (ME-MZM) and compare its performance with a single-electrode travelling wave Mach-Zehnder modulator (TWMZM). Utilizing the functionality of the ME-MZM structure plus digital-signal-processing, we report: 1) the C-band transmission of 84 Gb/s OOK modulated data below the KP4 forward error correction threshold with 2 Vpp drive voltage over a distance of 2 km; 2) the transmission of a 128 Gb/s optical 4-level pulse amplitude modulated signal over 1 km of fiber; and 3) the generation of a 168 Gb/s PAM-4 signal using two electrical OOK signals. By comparing the transmission system performance measurements for the ME-MZM with measurements performed using a similar series push-pull TWMZM, we show that the ME-MZM provides a clear advantage in achieving higher baud PAM-4 generation and transmission compared to a TWMZM.

200 Gb/s transmission using a dual-polarization O-Band silicon photonic intensity modulator for Stokes vector direct detection applications.

We present a dual-polarization O-band silicon photonic (SiP) transmitter for intra-datacenter optical interconnects. The transmitter is built using two identical O-band traveling wave Mach-Zehnder modulators with an average VπL and a bandwidth at 1.5 V bias voltage of 2.88 V.cm and 24.5 GHz, respectively. We experimentally demonstrate the transmitter in a Stokes vector direct-detection (SV-DD) system for dual-polarization intensity modulated signals with 2-level and 4-level pulse amplitude modulation (DP-PAM2 and DP-PAM4) formats. The direct-detection Stokes vector receiver (DD-SVR) followed by offline digital signal processing (DSP) is implemented for SOP de-rotation. We characterize the performance of the SV-DD system versus number of taps, received signal power, state of polarization (SOP), reach, and bit rate. Results reveal that 112 Gb/s DP-PAM2 can be transmitted over 10 km of single mode fiber (SMF) at a bit error rate (BER) below 10-5 at -1 dBm received signal power irrespective of the SOP. Moreover, a 168 Gb/s (42 Gbaud) DP-PAM4 signal can be transmitted over 2 km and 10 km at a BER below the 7% hard-decision forward error correction (HD-FEC) threshold (i.e., 3.8 × 10-3) at 0 dBm and 2 dBm, respectively. Furthermore, 224 Gb/s and 200 Gb/s DP-PAM4 are successfully received at a BER below the HD-FEC in the back-to-back and 2 km cases, respectively. Finally, we compare the performance of the 6 × 2 multiple-input multiple-output (MIMO) equalization to a simpler 4 × 2 MIMO equalization and explain the superior performance of the 6 × 2 in the presence of SVR imperfections.