Tuning of the Interconnecting Layer for Monolithic Perovskite/Organic Tandem Solar Cells with Record Efficiency Exceeding 21.

The photovoltaic performance of inorganic perovskite solar cells (PSCs) still lags behind the organic-inorganic hybrid PSCs due to limited light absorption of wide bandgap CsPbI3-xBrx under solar illumination. Constructing tandem devices with organic solar cells can effectively extend light absorption toward the long-wavelength region and reduce radiative photovoltage loss. Herein, we utilize wide-bandgap CsPbI2Br semiconductor and narrow-bandgap PM6:Y6-BO blend to fabricate perovskite/organic tandem solar cells with an efficiency of 21.1% and a very small tandem open-circuit voltage loss of 0.06 V. We demonstrate that the hole transport material of the interconnecting layers plays a critical role in determining efficiency, with polyTPD being superior to PBDB-T-Si and D18 due to its low parasitic absorption, sufficient hole mobility and quasi-Ohmic contact to suppress charge accumulation and voltage loss within the tandem device. These perovskite/organic tandem devices also display superior storage, thermal and ultraviolet stabilities.

Reduced Recombination and Capacitor-like Charge Buildup in an Organic Heterojunction.

Organic photovoltaic (OPV) efficiencies continue to rise, raising their prospects for solar energy conversion. However, researchers have long considered how to suppress the loss of free carriers by recombination-poor diffusion and significant Coulombic attraction can cause electrons and holes to encounter each other at interfaces close to where they were photogenerated. Using femtosecond transient spectroscopies, we report the nanosecond grow-in of a large transient Stark effect, caused by nanoscale electric fields of ∼487 kV/cm between photogenerated free carriers in the device active layer. We find that particular morphologies of the active layer lead to an energetic cascade for charge carriers, suppressing pathways to recombination, which is ∼2000 times less than predicted by Langevin theory. This in turn leads to the buildup of electric charge in donor and acceptor domains-away from the interface-resistant to bimolecular recombination. Interestingly, this signal is only experimentally obvious in thick films due to the different scaling of electroabsorption and photoinduced absorption signals in transient absorption spectroscopy. Rather than inhibiting device performance, we show that devices up to 600 nm thick maintain efficiencies of >8% because domains can afford much higher carrier densities. These observations suggest that with particular nanoscale morphologies the bulk heterojunction can go beyond its established role in charge photogeneration and can act as a capacitor, where adjacent free charges are held away from the interface and can be protected from bimolecular recombination.

Charge Carrier Transport and Generation via Trap-Mediated Optical Release in Organic Semiconductor Devices.

The impact of intermixed donor-acceptor domains in organic bulk heterojunction (BHJ) solar cells, using low-donor-content devices as model systems, is clarified. At low donor contents, the devices are found to exhibit anomalously high open-circuit voltages independent of the donor-acceptor energetics. These observations can be consistently explained by a theoretical model based on optical release of trapped holes, assuming the donors behave as trap sites in the gap of the acceptor. Our findings provide guidelines for reducing the large open-circuit voltage losses in organic solar cells and avoiding morphology-induced losses in state-of-the-art BHJ solar cells and photodetectors.

Charge Generation Pathways in Organic Solar Cells: Assessing the Contribution from the Electron Acceptor.

Photocurrent generation in organic bulk heterojunction (BHJ) solar cells is most commonly understood as a process which predominantly involves photoexcitation of the lower ionization potential species (donor) followed by electron transfer to the higher electron affinity material (acceptor) [i.e., photoinduced electron transfer (PET), which we term Channel I]. A mirror process also occurs in which photocurrent is generated through photoexcitation of the acceptor followed by hole transfer to the nonexcited donor or photoinduced hole transfer (PHT), which we term Channel II. The role of Channel II photocurrent generation has often been neglected due to overlap of the individual absorption spectra of the donor and acceptor materials that are commonly used. More recently Channel II charge generation has been explored for several reasons. First, many of the new high-efficiency polymeric donors are used as the minority component in bulk heterojunction blends, and therefore, the acceptor absorption is a significant fraction of the total; second, nonfullerene acceptors have been prepared, which through careful design, allow for spectral separation from the donor material, facilitating fundamental studies on charge generation. In this article, we review the methodologies for investigating the two charge generation channels. We also discuss the factors that affect charge generation via Channel I and II pathways, including energy levels of the materials involved, exciton diffusion, and other considerations. Finally, we take a comprehensive look at the nonfullerene acceptor literature and discuss what information about Channel I and Channel II can be obtained from the experiments conducted and what other experiments could be undertaken to provide further information about the operational efficiencies of Channels I and II.

Organohalide Perovskites for Solar Energy Conversion.

Lead-based organohalide perovskites have recently emerged as arguably the most promising of all next generation thin film solar cell technologies. Power conversion efficiencies have reached 20% in less than 5 years, and their application to other optoelectronic device platforms such as photodetectors and light emitting diodes is being increasingly reported. Organohalide perovskites can be solution processed or evaporated at low temperatures to form simple thin film photojunctions, thus delivering the potential for the holy grail of high efficiency, low embedded energy, and low cost photovoltaics. The initial device-driven "perovskite fever" has more recently given way to efforts to better understand how these materials work in solar cells, and deeper elucidation of their structure-property relationships. In this Account, we focus on this element of organohalide perovskite chemistry and physics in particular examining critical electro-optical, morphological, and architectural phenomena. We first examine basic crystal and chemical structure, and how this impacts important solar-cell related properties such as the optical gap. We then turn to deeper electronic phenomena such as carrier mobilities, trap densities, and recombination dynamics, as well as examining ionic and dielectric properties and how these two types of physics impact each other. The issue of whether organohalide perovskites are predominantly nonexcitonic at room temperature is currently a matter of some debate, and we summarize the evidence for what appears to be the emerging field consensus: an exciton binding energy of order 10 meV. Having discussed the important basic chemistry and physics we turn to more device-related considerations including processing, morphology, architecture, thin film electro-optics and interfacial energetics. These phenomena directly impact solar cell performance parameters such as open circuit voltage, short circuit current density, internal and external quantum efficiency, fill factor, and ultimately the all-important power conversion efficiency. Finally, we address the key challenges pertinent to actually delivering a new and viable solar cell technology. These include long-term cell stability, scaling to the module level, and the toxicity associated with lead. Organohalide perovskites not only offer exciting possibilities for next generation optoelectronics and photovoltaics, but are an intriguing class of material crossing the boundaries of molecular solids and banded inorganic semiconductors. This is a potential area of rich new chemistry, materials science, and physics.

Integrated quantum photonic sensor based on Hong-Ou-Mandel interference.

Photonic-crystal-based integrated optical systems have been used for a broad range of sensing applications with great success. This has been motivated by several advantages such as high sensitivity, miniaturization, remote sensing, selectivity and stability. Many photonic crystal sensors have been proposed with various fabrication designs that result in improved optical properties. In parallel, integrated optical systems are being pursued as a platform for photonic quantum information processing using linear optics and Fock states. Here we propose a novel integrated Fock state optical sensor architecture that can be used for force, refractive index and possibly local temperature detection. In this scheme, two coupled cavities behave as an "effective beam splitter". The sensor works based on fourth order interference (the Hong-Ou-Mandel effect) and requires a sequence of single photon pulses and consequently has low pulse power. Changes in the parameter to be measured induce variations in the effective beam splitter reflectivity and result in changes to the visibility of interference. We demonstrate this generic scheme in coupled L3 photonic crystal cavities as an example and find that this system, which only relies on photon coincidence detection and does not need any spectral resolution, can estimate forces as small as 10(-7) Newtons and can measure one part per million change in refractive index using a very low input power of 10(-10)W. Thus linear optical quantum photonic architectures can achieve comparable sensor performance to semiclassical devices.

Spectral dependence of the internal quantum efficiency of organic solar cells: effect of charge generation pathways.

The conventional picture of photocurrent generation in organic solar cells involves photoexcitation of the electron donor, followed by electron transfer to the acceptor via an interfacial charge-transfer state (Channel I). It has been shown that the mirror-image process of acceptor photoexcitation leading to hole transfer to the donor is also an efficient means to generate photocurrent (Channel II). The donor and acceptor components may have overlapping or distinct absorption characteristics. Hence, different excitation wavelengths may preferentially activate one channel or the other, or indeed both. As such, the internal quantum efficiency (IQE) of the solar cell may likewise depend on the excitation wavelength. We show that several model high-efficiency organic solar cell blends, notably PCDTBT:PC70BM and PCPDTBT:PC60/70BM, exhibit flat IQEs across the visible spectrum, suggesting that charge generation is occurring either via a dominant single channel or via both channels but with comparable efficiencies. In contrast, blends of the narrow optical gap copolymer DPP-DTT with PC70BM show two distinct spectrally flat regions in their IQEs, consistent with the two channels operating at different efficiencies. The observed energy dependence of the IQE can be successfully modeled as two parallel photodiodes, each with its own energetics and exciton dynamics but both having the same extraction efficiency. Hence, an excitation-energy dependence of the IQE in this case can be explained as the interplay between two photocurrent-generating channels, without recourse to hot excitons or other exotic processes.

Determination of fullerene scattering length density: a critical parameter for understanding the fullerene distribution in bulk heterojunction organic photovoltaic devices.

Fullerene derivatives are commonly used as electron acceptors in combination with (macro)molecular electron donors in bulk heterojunction (BHJ) organic photovoltaic (OPV) devices. Understanding the BHJ structure at different electron donor/acceptor ratios is critical to the continued improvement and development of OPVs. The high neutron scattering length densities (SLDs) of the fullerenes provide effective contrast for probing the distribution of the fullerene within the blend in a nondestructive way. However, recent neutron scattering studies on BHJ films have reported a wide range of SLDs ((3.6-4.4) × 10(-6) Å(-2)) for the fullerenes 60-PCBM and 70-PCBM, leading to differing interpretations of their distribution in thin films. In this article, we describe an approach for determining more precisely the scattering length densities of the fullerenes within a polymer matrix in order to accurately quantify their distribution within the active layers of OPV devices by neutron scattering techniques.

Exciton diffusion in organic semiconductors: precision and pitfalls.

Nanometer exciton diffusion is a fundamental process important in virtually all applications of organic semiconductors. Many measurement techniques have been developed to measure exciton diffusion length (LD) at the nanometer scale; however, these techniques have common challenges that the community has worked for decades to overcome. In this perspective, we lay out the principal challenges researchers need to overcome to obtain an accurate measurement of LD. We then examine the most common techniques used to measure LD with respect to these challenges and describe solutions developed to overcome them. This analysis leads to the suggestion that static quenching techniques underestimate LD due to uncertainties in the quenching behavior, while time-resolved exciton-exciton annihilation (EEA) techniques overestimate LD based on experimental conditions, we advance steady-state EEA techniques as an alternative that overcome many of the challenges of these other techniques while preserving accuracy. We support this hypothesis with a meta-analysis of LD measured across various organic semiconductors and measurement techniques. We intend this investigation to provide a framework for researchers to interpret and compare findings across measurement techniques and to guide researchers on how to obtain the most accurate results for each technique in question.

A New Framework for Understanding Recombination-Limited Charge Extraction in Disordered Semiconductors.

Recombination of free charges is a key loss mechanism limiting the performance of organic semiconductor-based photovoltaics such as solar cells and photodetectors. The carrier density-dependence of the rate of recombination and the associated rate coefficients are often estimated using transient charge extraction (CE) experiments. These experiments, however, often neglect the effect of recombination during the transient extraction process. In this work, the validity of the CE experiment for low-mobility devices, such as organic semiconductor-based photovoltaics, is investigated using transient drift-diffusion simulations. We find that recombination leads to incomplete CE, resulting in carrier density-dependent recombination rate constants and overestimated recombination orders; an effect that depends on both the charge carrier mobilities and the resistance-capacitance time constant. To overcome this intrinsic limitation of the CE experiment, we present an analytical model that accounts for charge carrier recombination, validate it using numerical simulations, and employ it to correct the carrier density-dependence observed in experimentally determined bimolecular recombination rate constants.

Enhanced SWIR Light Detection in Organic Semiconductor Photodetectors through Up-Conversion of Mid-Gap Trap States.

Shortwave-infrared (SWIR) photodetectors are vital for many scientific and industrial applications including surveillance, quality control and inspection. In recent decades, photodetectors based on organic semiconductors have emerged, demonstrating potential to add real value to broadband and narrowband imaging and sensing scenarios, where factors such as thermal budget sensitivity, large area aperture necessity, cost considerations, and lightweight and conformal flexibility demands are prioritized. It is now recognized that the performance of organic photodetectors (OPDs), notably their specific detectivity, is ultimately limited by trap states, universally present in disordered semiconductors. This work adopts an approach of utilizing these mid-gap states to specifically create a SWIR photo-response. To this end, this work introduces a somewhat counter-intuitive approach of "trap-doping" in bulk heterojunction (BHJs) photodiodes, where small quantities of a guest organic molecule are intentionally incorporated into a semiconducting donor:acceptor host system. Following this approach, this work demonstrates a proof-of-concept for a visible-to-SWIR broadband OPD, approaching (and, to some extent, even exceeding) state-of-the-art performance across critical photodetector metrics. The trap-doping approach is, even though only a proof-of-concept currently, broadly applicable to various spectral windows. It represents a new modality for engineering photodetection using the unconventional strategy of turning a limitation into a feature.

Alleviating nanostructural phase impurities enhances the optoelectronic properties, device performance and stability of cesium-formamidinium metal-halide perovskites.

The technique of alloying FA+ with Cs+ is often used to promote structural stabilization of the desirable α-FAPbI3 phase in halide perovskite devices. However, the precise mechanisms by which these alloying approaches improve the optoelectronic quality and enhance the stability have remained elusive. In this study, we advance that understanding by investigating the effect of cationic alloying in CsxFA1-xPbI3 perovskite thin-films and solar-cell devices. Selected-area electron diffraction patterns combined with microwave conductivity measurements reveal that fine Cs+ tuning (Cs0.15FA0.85PbI3) leads to a minimization of stacking faults and an increase in the photoconductivity of the perovskite films. Ultra-sensitive external quantum efficiency, kelvin-probe force microscopy and photoluminescence quantum yield measurements demonstrate similar Urbach energy values, comparable surface potential fluctuations and marginal impact on radiative emission yields, respectively, irrespective of Cs content. Despite this, these nanoscopic defects appear to have a detrimental impact on inter-grains'/domains' carrier transport, as evidenced by conductive-atomic force microscopy and corroborated by drastically reduced solar cell performance. Importantly, encapsulated Cs0.15FA0.85PbI3 devices show robust operational stability retaining 85% of the initial steady-state power conversion efficiency for 1400 hours under continuous 1 sun illumination at 35 °C, in open-circuit conditions. Our findings provide nuance to the famous defect tolerance of halide perovskites while providing solid evidence about the detrimental impact of these subtle structural imperfections on the long-term operational stability.

Subgap Absorption in Organic Semiconductors.

Organic semiconductors have found a broad range of application in areas such as light emission, photovoltaics, and optoelectronics. The active components in such devices are based on molecular and polymeric organic semiconductors, where the density of states is generally determined by the disordered nature of the molecular solid rather than energy bands. Inevitably, there exist states within the energy gap which may include tail states, deep traps caused by unavoidable impurities and defects, as well as intermolecular states due to (radiative) charge transfer states. In this Perspective, we first summarize methods to determine the absorption features due to the subgap states. We then explain how subgap states can be parametrized based upon the subgap spectral line shapes. We finally describe the role of subgap states in the performance metrics of organic semiconductor devices from a thermodynamic viewpoint.

Efficient Nanoscale Exciton Transport in Non-Fullerene Organic Solar Cells Enables Reduced Bimolecular Recombination of Free Charges.

The highest-efficiency organic photovoltaic (OPV)-based solar cells, made from blends of electron-donating and electron-accepting organic semiconductors, are often characterized by strongly reduced (non-Langevin) bimolecular recombination. Although the origins of the reduced recombination are debated, mechanisms related to the charge-transfer (CT) state and free-carrier encounter dynamics controlled by the size of donor and acceptor domains are proposed as underlying factors. Here, a novel photoluminescence-based probe is reported to accurately quantify the donor-acceptor domain size in OPV blends. Specifically, the domain size is measured in high-efficiency non-fullerene acceptor (NFA) systems and a comparative conventional fullerene system. It is found that the NFA-based blends form larger domains but that the expected reductions in bimolecular recombination attributed to the enhanced domain sizes are too small to account for the observed reduction factors. Further, it is shown that the reduction of bimolecular recombination is correlated to enhanced exciton dynamics within the NFA domains. This indicates that the processes responsible for efficient exciton transport also enable strongly non-Langevin recombination in high-efficiency NFA-based solar cells with low-energy offsets.

Photopically Transparent Organic Solar Cells with Tungsten Oxide-Based Multilayer Electrodes.

The tailoring of the average photopic transmittance (APT) of transparent organic solar cells (T-OSCs) has been the greatest challenge in building-integrated photovoltaic applications for future smart solar windows to regulate indoor brightness, maintain a human circadian rhythm, and positively impact human emotions by allowing the observation of the external environment. However, a notorious trade-off exists between the APT and power conversion efficiency (PCE) of T-OSCs, mainly due to the absence of highly conductive and transparent top electrodes, which are a key building block determining the PCE and APT. Herein, we demonstrate a new tungsten oxide (WO3)-based multilayer as a highly conductive and transparent top electrode that provides an excellent APT while maintaining a high PCE in T-OSCs. With the assistance of optical simulation based on a transfer matrix method to calculate the optimum thicknesses of the multilayer electrodes, we achieve the best-performing T-OSC with a PCE of 7.0% and a full device APT of 46.7%, resulting in a high light utilization efficiency of 3.27%, which is superior to that of T-OSCs based on the same photoactive system. Furthermore, superior thermal stability at 85 °C in an N2 atmosphere is observed in WO3-based T-OSCs, maintaining 98% of the initial PCE after about 231 h. Our findings provide new insights into the development of T-OSCs with high efficiency and transparency.

A Nitroxide Radical Conjugated Polymer as an Additive to Reduce Nonradiative Energy Loss in Organic Solar Cells.

Nonfullerene-acceptor-based organic solar cells (NFA-OSCs) are now set off to the 20% power conversion efficiency milestone. To achieve this, minimizing all loss channels, including nonradiative photovoltage losses, seems a necessity. Nonradiative recombination, to a great extent, is known to be an inherent material property due to vibrationally induced decay of charge-transfer (CT) states or their back electron transfer to the triplet excitons. Herein, it is shown that the use of a new conjugated nitroxide radical polymer with 2,2,6,6-tetramethyl piperidine-1-oxyl side groups (GDTA) as an additive results in an improvement of the photovoltaic performance of NFA-OSCs based on different active layer materials. Upon the addition of GDTA, the open-circuit voltage (VOC ), fill factor (FF), and short-circuit current density (JSC ) improve simultaneously. This approach is applied to several material systems including state-of-the-art donor/acceptor pairs showing improvement from 15.8% to 17.6% (in the case of PM6:Y6) and from 17.5% to 18.3% (for PM6:BTP-eC9). Then, the possible reasons behind the observed improvements are discussed. The results point toward the suppression of the CT state to triplet excitons loss channel. This work presents a facile, promising, and generic approach to further improve the performance of NFA-OSCs.

Role of Exciton Diffusion and Lifetime in Organic Solar Cells with a Low Energy Offset.

Despite general agreement that the generation of free charges in organic solar cells is driven by an energetic offset, power conversion efficiencies have been improved using low-offset blends. In this work, we explore the interconnected roles that exciton diffusion and lifetime play in the charge generation process under various energetic offsets. A detailed balance approach is used to develop an analytic framework for exciton dissociation and free-charge generation accounting for exciton diffusion to and dissociation at the donor-acceptor interface. For low-offset systems, we find the exciton lifetime to be a pivotal component in the charge generation process, as it influences both the exciton and CT state dissociation. These findings suggest that any novel low-offset material combination must have long diffusion lengths with long exciton lifetimes to achieve optimum charge generation yields.

Probing Charge Generation Efficiency in Thin-Film Solar Cells by Integral-Mode Transient Charge Extraction.

The photogeneration of free charges in light-harvesting devices is a multistep process, which can be challenging to probe due to the complexity of contributing energetic states and the competitive character of different driving mechanisms. In this contribution, we advance a technique, integral-mode transient charge extraction (ITCE), to probe these processes in thin-film solar cells. ITCE combines capacitance measurements with the integral-mode time-of-flight method in the low intensity regime of sandwich-type thin-film devices and allows for the sensitive determination of photogenerated charge-carrier densities. We verify the theoretical framework of our method by drift-diffusion simulations and demonstrate the applicability of ITCE to organic and perovskite semiconductor-based thin-film solar cells. Furthermore, we examine the field dependence of charge generation efficiency and find our ITCE results to be in excellent agreement with those obtained via time-delayed collection field measurements conducted on the same devices.

Electron-donating amine-interlayer induced n-type doping of polymer:nonfullerene blends for efficient narrowband near-infrared photo-detection.

Inherently narrowband near-infrared organic photodetectors are highly desired for many applications, including biological imaging and surveillance. However, they suffer from a low photon-to-charge conversion efficiencies and utilize spectral narrowing techniques which strongly rely on the used material or on a nano-photonic device architecture. Here, we demonstrate a general and facile approach towards wavelength-selective near-infrared phtotodetection through intentionally n-doping 500-600 nm-thick nonfullerene blends. We show that an electron-donating amine-interlayer can induce n-doping, resulting in a localized electric field near the anode and selective collection of photo-generated carriers in this region. As only weakly absorbed photons reach this region, the devices have a narrowband response at wavelengths close to the absorption onset of the blends with a high spectral rejection ratio. These spectrally selective photodetectors exhibit zero-bias external quantum efficiencies of ~20-30% at wavelengths of 900-1100 nm, with a full-width-at-half-maximum of ≤50 nm, as well as detectivities of >1012 Jones.