Interplay of Magnetic Properties and Doping in Epitaxial Films of h-REFeO3 Multiferroic Oxides.

Multiferroic materials demonstrating coexistence of magnetic and ferroelectric orders are promising candidates for magnetoelectric devices. While understanding the underlying mechanism of interplaying of ferroic properties is important, tailoring their properties to make them potential candidates for magnetoelectric devices is challenging. Here, the antiferromagnetic Neel ordering temperature above 200 K is realized in successfully stabilized epitaxial films of (Lu,Sc)FeO3 multiferroic oxide. The first-principles calculations show the shrinkage of in-plane lattice constants of the unit cells of the films on different substrates which corroborates well the enhancement of the Neel ordering temperature (TN ). The profound effect of lattice strain/stress at the interface due to differences of in-plane lattice constants on out of plane magnetic properties and on spin reorientation temperature in the antiferromagnetic region is further elucidated in the epitaxial films with and without buffer layer of Mn-doped LuFeO3 . Writing and reading ferroelectric domains reveal the ferroelectric response of the films at room temperature. Detailed electron microscopy shows the presence of lattice defects in atomic scale. First-principles calculations show that orbital rehybridization of rare-earth ions and oxygen is one of the main driving force of ferroelectricity along c-axis in thin films of hexagonal ferrites.

Shape-memory effect in twisted ferroic nanocomposites.

The shape recovery ability of shape-memory alloys vanishes below a critical size (~50 nm), which prevents their practical applications at the nanoscale. In contrast, ferroic materials, even when scaled down to dimensions of a few nanometers, exhibit actuation strain through domain switching, though the generated strain is modest (~1%). Here, we develop freestanding twisted architectures of nanoscale ferroic oxides showing shape-memory effect with a giant recoverable strain (>8%). The twisted geometrical design amplifies the strain generated during ferroelectric domain switching, which cannot be achieved in bulk ceramics or substrate-bonded thin films. The twisted ferroic nanocomposites allow us to overcome the size limitations in traditional shape-memory alloys and open new avenues in engineering large-stroke shape-memory materials for small-scale actuating devices such as nanorobots and artificial muscle fibrils.

The structural evolution of Mo2C and Mo2C/SiO2 under dry reforming of methane conditions: morphology and support effects.

The thermal carburization of MoO3 nanobelts (nb) and SiO2-supported MoO3 nanosheets under a 1 : 4 mixture of CH4 : H2 yields Mo2C-nb and Mo2C/SiO2. Following this process by in situ Mo K-edge X-ray absorption spectroscopy (XAS) reveals different carburization pathways for unsupported and supported MoO3. In particular, the carburization of α-MoO3-nb proceeds via MoO2, and that of MoO3/SiO2 via the formation of highly dispersed MoO x species. Both Mo2C-nb and Mo2C/SiO2 catalyze the dry reforming of methane (DRM, 800 °C, 8 bar) but their catalytic stability differs. Mo2C-nb shows a stable performance when using a CH4-rich feed (CH4 : CO2 = 4 : 2), however deactivation due to the formation of MoO2 occurs for higher CO2 concentrations (CH4 : CO2 = 4 : 3). In contrast, Mo2C/SiO2 is notably more stable than Mo2C-nb under the CH4 : CO2 = 4 : 3 feed. The influence of the morphology of Mo2C and its dispersion on silica on the structural evolution of the catalysts under DRM is further studied by in situ Mo K-edge XAS. It is found that Mo2C/SiO2 features a higher resistance to oxidation under DRM than the highly crystalline unsupported Mo2C-nb and this correlates with an improved catalytic stability. Lastly, the oxidation of Mo in both Mo2C-nb and Mo2C/SiO2 under DRM conditions in the in situ XAS experiments leads to an increased activity of the competing reverse water gas shift reaction.

Giant Strain and Induced Ferroelectricity in Amorphous BaTiO3 Films under Poling.

We report an effect of giant surface modification of a 5.6 nm thick BaTiO3 film grown on Si (100) substrate under poling by conductive tip of a scanning probe microscope (SPM). The surface can be locally elevated by about 9 nm under -20 V applied during scanning, resulting in the maximum strain of 160%. The threshold voltage for the surface modification is about 12 V. The modified topography is stable enough with time and slowly decays after poling with the rate ~0.02 nm/min. Strong vertical piezoresponse after poling is observed, too. Combined measurements by SPM and piezoresponse force microscopy (PFM) prove that the poled material develops high ferroelectric polarization that cannot be switched back even under an oppositely oriented electric field. The topography modification is hypothesized to be due to a strong Joule heating and concomitant interface reaction between underlying Si and BaTiO3. The top layer is supposed to become ferroelectric as a result of local crystallization of amorphous BaTiO3. This work opens up new possibilities to form nanoscale ferroelectric structures useful for various applications.