Femtosecond laser irradiation as a novel method for nanosheet growth and defect generation in g-C3N4.

Among the many recently developed photo-catalytic materials, graphitic carbon nitride (g-C3N4) shows great promise as a catalytic material for water splitting, hydrogen generation, and related catalytic applications. Herein, synthesized bulk g-C3N4is simply irradiated under a 35 fs pulse at mixed photon energies (800 nm and its second harmonic). g-C3N4was synthesized from melamine following a facile thermal polymerization procedure. The prepared material was introduced, in an aqueous environment, to the femtosecond laser for various lengths of time. The treated material demonstrates a significant increase in surface area, relative to the untreated samples, indicating that irradiation is a successful method for exfoliation. The subsequent characterization reveals that the mixed irradiation process drives significant defect generation and sheet growth, which is not seen under 800 nm irradiation. Extended mixed irradiation results in 4 nm thick nanosheets with lateral dimensions 4× that of the bulk material. The treated material shows improved dye absorption/removal. This novel method of defect generation and nanosheet growth shows great potential as a g-C3N4pre-treatment method for co-catalytic applications. Herein it is shown that femtosecond laser irradiation drives exfoliation beyond 100 nm particle sizes, and sheet-like morphologies under extended irradiation, which must be taken into account when using this method to improve material performance.

Built-In Packaging for Single Terminal Devices.

An alternative packaging method, termed built-in packaging, is proposed for single terminal devices, and demonstrated with an actuator application. Built-in packaging removes the requirements of wire bonding, chip carrier, PCB, probe station, interconnection elements, and even wires to drive single terminal devices. Reducing these needs simplifies operation and eliminates possible noise sources. A micro resonator device is fabricated and built-in packaged for demonstration with electrostatic actuation and optical measurement. Identical actuation performances are achieved with the most conventional packaging method, wire bonding. The proposed method offers a compact and cheap packaging for industrial and academic applications.

Built-In Packaging for Two-Terminal Devices.

Conventional packaging and interconnection methods for two-terminal devices, e.g., diodes often involve expensive and bulky equipment, introduce parasitic effects and have reliability issues. In this study, we propose a built-in packaging method and evaluate its performance compared to probing and wire bonding methods. The built-in packaging approach offers a larger overlap area, improved contact resistance, and direct connection to testing equipment. The experimental results demonstrate a 12% increase in current, an 11% reduction in resistance, and improved performance of the diode. The proposed method is promising for enhancing sensing applications, wireless power transmission, energy harvesting, and solar rectennas. Overall, the built-in packaging method offers a simpler, cheaper, more compact and more reliable packaging solution, paving the way for more efficient and advanced technologies in these domains.

Manufacturing of quantum-tunneling MIM nanodiodes via rapid atmospheric CVD in terahertz band.

Quantum-tunneling metal-insulator-metal (MIM) diodes have emerged as a significant area of study in the field of materials science and electronics. Our previous work demonstrated the successful fabrication of these diodes using atmospheric pressure chemical vapor deposition (AP-CVD), a scalable method that surpasses traditional vacuum-based methods and allows for the fabrication of high-quality Al2O3 films with few pinholes. Here, we show that despite their extremely small size 0.002 µm2, the MIM nanodiodes demonstrate low resistance at zero bias. Moreover, we have observed a significant enhancement in resistance by six orders of magnitude compared to our prior work, Additionally, we have achieved a high responsivity of 9 AW-1, along with a theoretical terahertz cut-off frequency of 0.36 THz. Our approach provides an efficient alternative to cleanroom fabrication, opening up new opportunities for manufacturing terahertz-Band devices. The results of our study highlight the practicality and potential of our method in advancing nanoelectronics. This lays the foundation for the development of advanced quantum devices that operate at terahertz frequencies, with potential applications in telecommunications, medical imaging, and security systems.