Nanoscale Metastable ε-Fe3N Ferromagnetic Materials by Self-Sustained Reactions.

A single-step method for the preparation of metastable ε-Fe3N nanoparticles by combustion of reactive gels containing iron nitrate (Fe(NO3)3) and hexamethylenetetramine (C6H12N4) in an inert atmosphere is reported. The results of Fourier transform infrared spectroscopy (FTIR) and thermal analysis coupled with dynamic mass spectrometry revealed that the exothermic decomposition of a coordination complex formed between Fe(NO3)3 and HMTA is responsible for the formation of ε-Fe3N nanoscale particles with sizes of 5-15 nm. The magnetic properties between 5 and 350 K are characterized using a superconducting quantum interference device (SQUID) magnetometer, revealing a ferromagnetic behavior with a low-temperature magnetic moment of 1.09 µB/Fe, high room temperature saturation magnetization (∼80 emu/g), and low remanent magnetization (∼15 emu/g). The obtained value for the Curie temperature of ∼522 K is close to that (∼575 K) for bulk ε-Fe3N reported in the literature.

Giant Zeeman splitting in nucleation-controlled doped CdSe:Mn2+ quantum nanoribbons.

Doping of semiconductor nanocrystals by transition-metal ions has attracted tremendous attention owing to their nanoscale spintronic applications. Such doping is, however, difficult to achieve in low-dimensional strongly quantum confined nanostructures by conventional growth procedures. Here we demonstrate that the incorporation of manganese ions up to 10% into CdSe quantum nanoribbons can be readily achieved by a nucleation-controlled doping process. The cation-exchange reaction of (CdSe)(13) clusters with Mn(2+) ions governs the Mn(2+) incorporation during the nucleation stage. This highly efficient Mn(2+) doping of the CdSe quantum nanoribbons results in giant exciton Zeeman splitting with an effective g-factor of approximately 600, the largest value seen so far in diluted magnetic semiconductor nanocrystals. Furthermore, the sign of the s-d exchange is inverted to negative owing to the exceptionally strong quantum confinement in our nanoribbons. The nucleation-controlled doping strategy demonstrated here thus opens the possibility of doping various strongly quantum confined nanocrystals for diverse applications.

Field-free manipulation of magnetization alignments in a Fe/GaAs/GaMnAs multilayer by spin-orbit-induced magnetic fields.

We investigate the process of selectively manipulating the magnetization alignment in magnetic layers in the Fe/GaAs/GaMnAs structure by current-induced spin-orbit (SO) magnetic field. The presence of such fields manifests itself through the hysteretic behavior of planar Hall resistance observed for two opposite currents as the magnetization in the structure switches directions. In the case of the Fe/GaAs/GaMnAs multilayer, hystereses are clearly observed when the magnetization switches direction in the GaMnAs layer, but are negligible when magnetization transitions occur in Fe. This difference in the effect of the SO-field in the two magnetic layers provides an opportunity to control the magnetization in one layer (in the presence case in GaMnAs) by a current, while the magnetization in the other layer (i.e., Fe) remains fixed. Owing to our ability to selectively control the magnetization in the GaMnAs layer, we are able to manipulate the relative spin configurations in our structure between collinear and non-collinear alignments simply by switching the current direction even in the absence of an external magnetic field.

Selective Chemical Response of Transition Metal Dichalcogenides and Metal Dichalcogenides in Ambient Conditions.

To fabricate practical devices based on semiconducting two-dimensional (2D) materials, the source, channel, and drain materials are exposed to ambient air. However, the response of layered 2D materials to air has not been fully elucidated at the molecular level. In the present report, the effects of air exposure on transition metal dichalcogenides (TMD) and metal dichalcogenides (MD) are studied using ultrahigh-vacuum scanning tunneling microscopy (STM). The effects of a 1-day ambient air exposure on MBE-grown WSe2, chemical vapor deposition (CVD)-grown MoS2, and MBE SnSe2 are compared. Both MBE-grown WSe2 and CVD-grown MoS2 display a selective air exposure response at the step edges, consistent with oxidation on WSe2 and adsorption of hydrocarbon on MoS2, while the terraces and domain/grain boundaries of both TMDs are nearly inert to ambient air. Conversely, MBE-grown SnSe2, an MD, is not stable in ambient air. After exposure in ambient air for 1 day, the entire surface of SnSe2 is decomposed to SnOx and SeOx, as seen with X-ray photoelectron spectroscopy. Since the oxidation enthalpy of all three materials is similar, the data is consistent with greater oxidation of SnSe2 being driven by the weak bonding of SnSe2.

Measurement of coherence decay in GaMnAs using femtosecond four-wave mixing.

The application of femtosecond four-wave mixing to the study of fundamental properties of diluted magnetic semiconductors ((s,p)-d hybridization, spin-flip scattering) is described, using experiments on GaMnAs as a prototype III-Mn-V system.  Spectrally-resolved and time-resolved experimental configurations are described, including the use of zero-background autocorrelation techniques for pulse optimization.  The etching process used to prepare GaMnAs samples for four-wave mixing experiments is also highlighted.  The high temporal resolution of this technique, afforded by the use of short (20 fsec) optical pulses, permits the rapid spin-flip scattering process in this system to be studied directly in the time domain, providing new insight into the strong exchange coupling responsible for carrier-mediated ferromagnetism.  We also show that spectral resolution of the four-wave mixing signal allows one to extract clear signatures of (s,p)-d hybridization in this system, unlike linear spectroscopy techniques.   This increased sensitivity is due to the nonlinearity of the technique, which suppresses defect-related contributions to the optical response. This method may be used to measure the time scale for coherence decay (tied to the fastest scattering processes) in a wide variety of semiconductor systems of interest for next generation electronics and optoelectronics.

Spin-polarizable excitonic luminescence in colloidal Mn2+-doped CdSe quantum dots.

The photoluminescence of colloidal Mn2+-doped CdSe nanocrystals has been studied as a function of nanocrystal diameter. These nanocrystals are shown to be unique among colloidal doped semiconductor nanocrystals reported to date in that quantum confinement allows tuning of the CdSe bandgap energy across the Mn2+ excited-state energies. At small diameters, the nanocrystal photoluminescence is dominated by Mn 2+ emission. At large diameters, CdSe excitonic photoluminescence dominates. The latter scenario has allowed spin-polarized excitonic photoluminescence to be observed in colloidal doped semiconductor nanocrystals for the first time.