3D integration enables ultralow-noise isolator-free lasers in silicon photonics.

Photonic integrated circuits are widely used in applications such as telecommunications and data-centre interconnects1-5. However, in optical systems such as microwave synthesizers6, optical gyroscopes7 and atomic clocks8, photonic integrated circuits are still considered inferior solutions despite their advantages in size, weight, power consumption and cost. Such high-precision and highly coherent applications favour ultralow-noise laser sources to be integrated with other photonic components in a compact and robustly aligned format-that is, on a single chip-for photonic integrated circuits to replace bulk optics and fibres. There are two major issues preventing the realization of such envisioned photonic integrated circuits: the high phase noise of semiconductor lasers and the difficulty of integrating optical isolators directly on-chip. Here we challenge this convention by leveraging three-dimensional integration that results in ultralow-noise lasers with isolator-free operation for silicon photonics. Through multiple monolithic and heterogeneous processing sequences, direct on-chip integration of III-V gain medium and ultralow-loss silicon nitride waveguides with optical loss around 0.5 decibels per metre are demonstrated. Consequently, the demonstrated photonic integrated circuit enters a regime that gives rise to ultralow-noise lasers and microwave synthesizers without the need for optical isolators, owing to the ultrahigh-quality-factor cavity. Such photonic integrated circuits also offer superior scalability for complex functionalities and volume production, as well as improved stability and reliability over time. The three-dimensional integration on ultralow-loss photonic integrated circuits thus marks a critical step towards complex systems and networks on silicon.

Subspace tracking for phase noise source separation in frequency combs.

It is widely acknowledged that the phase noise of an optical frequency comb primarily stems from the common mode (carrier-envelope) and the repetition rate phase noise. However, owing to technical noise sources or other intricate intra-cavity factors, residual phase noise components, distinct from the common mode and the repetition rate phase noise, may also exist. We introduce a measurement technique that combines subspace tracking and multi-heterodyne coherent detection for the separation of different phase noise sources. This method allows us to break down the overall phase noise sources associated with a specific comb-line into distinct phase noise components associated with the common mode, the repetition rate and the residual phase noise terms. The measurement method allow us, for the first time, to identify and measure residual phase noise sources of a frequency modulated mode-locked laser.

Frequency comb dynamics of a 1.3µm hybrid-silicon quantum dot semiconductor laser with optical injection: erratum.

In Opt. Lett.45, 5755 (2019)OPLEDP0146-959210.1364/OL.44.005755, a factor is missing in the result of Eq. (1). Thus, the width of the comb spectrum $ \Delta \nu $Δν becomes $ \Delta \nu = 2{\sqrt 3} \Gamma {\alpha _e} $Δν=23Γαe.

Effect of p-doping on the intensity noise of epitaxial quantum dot lasers on silicon.

This work experimentally investigates the impact of p-doping on the relative intensity noise (RIN) properties and subsequently on the modulation properties of semiconductor quantum dot (QD) lasers epitaxially grown on silicon. Owing to the low threading dislocation density and the p-modulation doped GaAs barrier layer in the active region, the RIN level is found very stable with temperature with a minimum value of -150dB/Hz. The dynamical features extracted from the RIN spectra show that p-doping between zero and 20 holes/dot strongly modifies the modulation properties and gain nonlinearities through increased internal losses in the active region and thereby hinders the maximum achievable bandwidth. Overall, this Letter is important for designing future high-speed and low-noise QD devices integrated in future photonic integrated circuits.

Frequency comb dynamics of a 1.3 µm hybrid-silicon quantum dot semiconductor laser with optical injection.

This work reports on the influence of bias voltage applied on a saturable absorber (SA) on a subthreshold linewidth enhancement factor (LEF) in hybrid-silicon quantum dot optical frequency comb lasers. Results show that the reverse bias voltage on SA contributes to enlarge the LEF and improve the comb dynamics. Optical injection is also found to be able to improve the comb spectrum in terms of 3 dB bandwidth and its flatness. Such novel findings are promising for the development of high-speed dense wavelength-division multiplexing photonic integrated circuits in optical interconnects and datacom applications.

Broadband quantum-dot frequency-modulated comb laser.

Frequency-modulated (FM) laser combs, which offer a quasi-continuous-wave output and a flat-topped optical spectrum, are emerging as a promising solution for wavelength-division multiplexing applications, precision metrology, and ultrafast optical ranging. The generation of FM combs relies on spatial hole burning, group velocity dispersion, Kerr nonlinearity, and four-wave mixing (FWM). While FM combs have been widely observed in quantum cascade Fabry-Perot (FP) lasers, the requirement for a low-dispersion FP cavity can be a challenge in platforms where the waveguide dispersion is mainly determined by the material. Here we report a 60 GHz quantum-dot (QD) mode-locked laser in which both the amplitude-modulated (AM) and the FM comb can be generated independently. The high FWM efficiency of -5 dB allows the QD laser to generate FM comb efficiently. We also demonstrate that the Kerr nonlinearity can be practically engineered to improve the FM comb bandwidth without the need for GVD engineering. The maximum 3-dB bandwidth that our QD platform can deliver is as large as 2.2 THz. This study gives novel insights into the improvement of FM combs and paves the way for small-footprint, electrically pumped, and energy-efficient frequency combs for silicon photonic integrated circuits (PICs).

Uncovering recent progress in nanostructured light-emitters for information and communication technologies.

Semiconductor nanostructures with low dimensionality like quantum dots and quantum dashes are one of the best attractive and heuristic solutions for achieving high performance photonic devices. When one or more spatial dimensions of the nanocrystal approach the de Broglie wavelength, nanoscale size effects create a spatial quantization of carriers leading to a complete discretization of energy levels along with additional quantum phenomena like entangled-photon generation or squeezed states of light among others. This article reviews our recent findings and prospects on nanostructure based light emitters where active region is made with quantum-dot and quantum-dash nanostructures. Many applications ranging from silicon-based integrated technologies to quantum information systems rely on the utilization of such laser sources. Here, we link the material and fundamental properties with the device physics. For this purpose, spectral linewidth, polarization anisotropy, optical nonlinearities as well as microwave, dynamic and nonlinear properties are closely examined. The paper focuses on photonic devices grown on native substrates (InP and GaAs) as well as those heterogeneously and epitaxially grown on silicon substrate. This research pipelines the most exciting recent innovation developed around light emitters using nanostructures as gain media and highlights the importance of nanotechnologies on industry and society especially for shaping the future information and communication society.