Single-etched fiber-chip coupler with a metal mirror on a 220-nm silicon-on-insulator platform for perfectly vertical coupling.

Vertical couplers play a pivotal role as essential components supporting interconnections between fibers and photonic integrated circuits (PICs). In this study, we propose and demonstrate a high-performance perfectly vertical coupler based on a three-stage inverse design method, realized through a single full etching process on a 220-nm silicon-on-insulator (SOI) platform with a backside metal mirror. Under surface-normal fiber placement, experimental results indicate a remarkable 3-dB bandwidth of 99 nm with a peak coupling efficiency of -1.44 dB at the wavelength of 1549 nm. This achievement represents the best record to date, to the best of our knowledge, for a perfectly vertical coupler fabricated under similar process conditions.

Ultracompact and ultralow-loss S-bends with easy fabrication by numerical optimization.

Ultra-longitudinal-compact S-bends with flexible latitudinal distances (d) are proposed and experimentally demonstrated with ultralow loss and fabrication-friendly structures by three steps based on numerical optimization. During the first step (curve optimization), insertion losses (ILs) of S-bends are significantly reduced by optimizing transition curves based on Bézier curves. During the second step (shape optimization), the ILs are further minimized by varying the widths of S-bends to increase optical confinement. In the third step (curvature optimization), considering ease of fabrication, an optimization of curvature radius is used to ensure that all feature sizes for the S-bends are larger than 200 nm. Simulation results show that for S-bends with footprints of 2.5× d µm2, the ILs are less than (0.19, 0.045, 0.18, 0.27) dB in a wavelength range of 1400-1700 nm when d is set as (3, 6, 9, 12) µm, respectively. Then, the S-bends of 2.5× 3 µm2 and 2.5× 12 µm2 are fabricated on a commercial 220-nm silicon-on-insulator (SOI) platform. Experimental results show that the ILs of both are less than 0.16 dB in a wavelength range of 1420-1630 nm. The lowest ILs are 0.074 dB and 0.070 dB, respectively. Moreover, in addition to the ultralow ILs and ease of fabrication, our design is flexible for designing S-bends with a flexible value of d, which makes our approach practical in large-scale photonic integrated circuits.

Ultra-compact X-shaped waveguide crossings with flexible angles based on inverse design.

When photonics integrated circuits (PICs) become more massive in scale, the area of chip can't be taken full advantage of with 2×2 waveguide crossings with a 90° intersection angle. Crossings with small angles would be a better idea to further improve the area utilization, but few works have researched 2×2 crossings with different angles. In this paper, in order to have an ultra-compact footprint and a flexible intersection angle while keeping a high performance, we report a series of compact X-shaped waveguide crossings in silicon-on-insulator (SOI) waveguides for fundamental transverse electric (TE0) mode, designed by using finite-difference frequency-domain (FDFD) numerical analysis method and a global optimization method. Thanks to inverse design, a compact footprint as small as 4.5 µm2 and various angles between two input/output waveguides of 30°, 45°, 60°, 80° and 90° are achieved. Simulation results show that all crossings have good performance of insertion losses (ILs) within 0.1∼0.3 dB and crosstalks (CTs) within -20∼-50 dB in the wavelength range of 1525∼1582 nm. Moreover, the designed crossings were fabricated on a commercially available 220-nm SOI platform. The measured results show that the ILs of all crossings are around 0.2∼0.4 dB and the CTs are around -20 dB∼-32 dB; especially for the 30° intersection angle, the crossing has IL around 0.2 dB and CT around -31 dB in C band. Besides, we theoretically propose an approach of a primary structure processing technique to enhance the device performance with a more compact footprint. This technique is to remove the redundant structures in conjunction with the electric field distribution during the optimization procedure of inverse design. For the new 90° crossing structure produced by it, simulation results show that ILs of 0.29 ± 0.03 dB and CTs of -37 ± 2.5 dB in the wavelength range of 1500∼1600 nm are achieved and the footprint is shrunk by 25.5%.

On-chip integratable all-optical quantizer using cascaded step-size MMI.

We propose a novel all-optical phase shifted quantizer using cascade step-size MMI. The operation principle has been derived in detail. A 3-bit quantizer and a 5-bit quantizer are designed and simulated based on 220-nm SOI platform to verify the feasibility of the scheme, of which the lengths are all below 200 µm. To the best of our knowledge, they have the most compact footprint compared to the existing all-optical quantizers. In the end, the fabrication error analyses of the proposed quantizers are carried out to verify their stability.