The atomic layer deposition (ALD) synthesis of copper-tin sulfide thin films using low-cost precursors.

In this work we demonstrated the process of co-deposition of copper-tin sulfide species by the atomic layer deposition (ALD) technique using all-low-cost precursors. For the deposition of tin species, the tin(IV) chloride SnCl4was used successfully for the first time in the ALD process. Moreover, we showed that the successful deposition of the tin sulfide component was conditioned by the pre-deposition of CuSxlayer. The co-deposition of copper and tin sulfides components at 150 °C resulted in the in-process formation of the film containing Cu2SnS3, Cu3SnS4andπ-SnS phases. The process involving only tin precursor and H2S did not produce the SnSxspecies. The spectroscopic characteristic of the obtained materials were confronted with the literature survey, allowing us to discuss the methodology of the determination of ternary and quaternary sulfides purity by Raman spectroscopy. Moreover, the material characterisation with respect to the morphology (SEM), phase composition (XRD), surface chemical states (XPS), optical properties (UV-vis-NIR spectroscopy) and electric (Hall measurements) properties were provided. Finally, the obtained material was used for the formation of the p-n junction revealing the rectifyingI-Vcharacteristics.

Correction: A graphene/h-BN MEMS varactor for sub-THz and THz applications.

Correction for 'A graphene/h-BN MEMS varactor for sub-THz and THz applications' by Piotr A. Drózdz et al., Nanoscale, 2023, https://doi.org/10.1039/d2nr06863j.

A graphene/h-BN MEMS varactor for sub-THz and THz applications.

Recent development of terahertz systems has created the need for new elements operating in this frequency band, i.e., fast tunable devices such as varactors. Here, we present the process flow and characterization of a novel electronic variable capacitor device that is made with the use of 2D metamaterials such as graphene (GR) or hexagonal boron nitride (h-BN). Comb-like structures are etched into a silicon/silicon nitride substrate and a metal electrode is deposited at the bottom. Next, a PMMA/GR/h-BN layer is placed on top of the sample. As voltage is applied between GR and metal, the PMMA/GR/h-BN layer bends towards the bottom electrode thus decreasing the distance between electrodes and changing the capacitance. The high tunability and complementary metal oxide semiconductor (CMOS)-compatible process flow of the platform for our device and its millimeter size make it promising for applications in future electronics and terahertz technologies. The goal of our research is to integrate our device with dielectric rod waveguides, thus making THz phase shifters.

Piezoelectric Response and Substrate Effect of ZnO Nanowires for Mechanical Energy Harvesting in Internet-of-Things Applications.

Recently, an unprecedented growth in the internet of things (IoT) is being observed, which is becoming the main driver for the entire semiconductor industry. Reliable maintenance and servicing of the IoT is becoming challenging, knowing that the IoT nodes outnumber the human population by a factor of seven. Energy harvesting (EH) can overcome those difficulties, delivering the energyautonomous IoT nodes to the market. EH converts natural or waste energies (vibrations, heat losses, air flows, light, etc.) into useful energy. This article explores the performance of ZnO nanowires under mechanical actuation to characterize their piezoelectric performance. ZnO nanowires were fabricated using ALD and a subsequent chemical bath growth. AISI 301 steel was used as a substrate of the EH device to better fit the mechanical requirements for the piezoelectric generator. We determined that a thin layer of another oxide below ZnO provides outstanding adhesion. The samples were submitted under repetitive mechanical stress in order to characterize the output piezovoltage for different conditions. They exhibited a piezoelectric signal which was stable after hundreds of actuations. This shows good promise for the use of our device based on ZnO, an Earth-abundant and non-toxic material, as an alternative to the conventional and popular but harmful and toxic PZT. The designed measurement setup demonstrated that a AISI 301 steel substrate coated with ZnO deposited by ALD and grown in a chemical bath has promising performance as a piezoelectric material. Characterized ZnO samples generate up to 80 nJ of energy during 55 s runs under matched load conditions, which is sufficient to supply a modern IoT node.

Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation.

The gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device enabled gate voltage tuning for enhanced measurements of changes in DC electrical characteristics. Electrical measurements were combined with a fluctuation-enhanced sensing methodology and intermittent UV irradiation. Distinctly different features in 1/f noise spectra for the organic gases measured under UV irradiation and in the dark were observed. The most intense response observed for tetrahydrofuran prompted the decomposition of the DC characteristic, revealing the photoconductive and photogating effect occurring in the graphene channel with the dominance of the latter. Our observations shed light on understanding surface processes at the interface between graphene and volatile organic compounds for graphene-based sensors in ambient conditions that yield enhanced sensitivity and selectivity.