Experimental evidence for defect tolerance in Pb-halide perovskites.

The term defect tolerance (DT) is used often to rationalize the exceptional optoelectronic properties of halide perovskites (HaPs) and their devices. Even though DT lacked direct experimental evidence, it became a "fact" in the field. DT in semiconductors implies that structural defects do not translate to electrical and optical effects (e.g., due to charge trapping), associated with such defects. We present pioneering direct experimental evidence for DT in Pb-HaPs by comparing the structural quality of 2-dimensional (2D), 2D-3D, and 3D Pb-iodide HaP crystals with their optoelectronic characteristics using high-sensitivity methods. Importantly, we get information from the materials' bulk because we sample at least a few hundred nanometers, up to several micrometers, from the sample's surface, which allows for assessing intrinsic bulk (and not only surface-) properties of HaPs. The results point to DT in 3D, 2D-3D, and 2D Pb-HaPs. Overall, our data provide an experimental basis to rationalize DT in Pb-HaPs. These experiments and findings will help the search for and design of materials with real DT.

Low Dimensional, Metal-Free, Hydrazinium Halide Perovskite-Related Single Crystals and Their Use as X-Ray Detectors.

Metal-free halide perovskites (MFHaPs) have garnered significant attention in recent years due to their desirable properties, such as low toxicity, light weight, chemical versatility, and potential for optoelectronics. MFHaPs with the formula A2+ B+ X-3 (where A is a large organic divalent cation, B+ is typically NH4 + , and X is a halide) have been studied extensively, but few studies have examined alternative cations at the B position. This paper reports the synthesis of three MFHaP-related single crystals, DABCO-N2 H5 -X3 (DABCO = N-N-diazabicyclo[2.2.2]octonium, X = Br and I) and (DABCO)3 -N2 H5 (NH4 )2 Cl9 , which feature hydrazinium (N2 H5 ) at the B position. The crystals have a perovskite-like, one-dimensional, edge-connected structure and exhibit optical and band structure properties. The crystals were then tested as X-ray detectors, where they showed excellent photoresponsivity, stability, and low background noise, owing to the large semi-gap that dictates long lifetimes. The detectors exhibited sensitivity as high as 1143 ± 10 µC Gyair -1 cm-2 and a low detection limit of 2.68 µGy s-1 at 10 V. The researchers suggest that the stronger hydrogen bonding in N2 H5 + compounds compared to NH4 + MFHaPs may contribute to the detectors' enhanced stability.

Tetragonal CH3NH3PbI3 is ferroelectric.

Halide perovskite (HaP) semiconductors are revolutionizing photovoltaic (PV) solar energy conversion by showing remarkable performance of solar cells made with HaPs, especially tetragonal methylammonium lead triiodide (MAPbI3). In particular, the low voltage loss of these cells implies a remarkably low recombination rate of photogenerated carriers. It was suggested that low recombination can be due to the spatial separation of electrons and holes, a possibility if MAPbI3 is a semiconducting ferroelectric, which, however, requires clear experimental evidence. As a first step, we show that, in operando, MAPbI3 (unlike MAPbBr3) is pyroelectric, which implies it can be ferroelectric. The next step, proving it is (not) ferroelectric, is challenging, because of the material's relatively high electrical conductance (a consequence of an optical band gap suitable for PV conversion) and low stability under high applied bias voltage. This excludes normal measurements of a ferroelectric hysteresis loop, to prove ferroelectricity's hallmark switchable polarization. By adopting an approach suitable for electrically leaky materials as MAPbI3, we show here ferroelectric hysteresis from well-characterized single crystals at low temperature (still within the tetragonal phase, which is stable at room temperature). By chemical etching, we also can image the structural fingerprint for ferroelectricity, polar domains, periodically stacked along the polar axis of the crystal, which, as predicted by theory, scale with the overall crystal size. We also succeeded in detecting clear second harmonic generation, direct evidence for the material's noncentrosymmetry. We note that the material's ferroelectric nature, can, but need not be important in a PV cell at room temperature.

All-Inorganic CsPbX3 Perovskite Solar Cells: Progress and Prospects.

Recently, lead halide-based perovskites have become one of the hottest topics in photovoltaic research because of their excellent optoelectronic properties. Among them, organic-inorganic hybrid perovskite solar cells (PSCs) have made very rapid progress with their power conversion efficiency (PCE) now at 23.7 %. However, the intrinsically unstable nature of these materials, particularly to moisture and heat, may be a problem for their long-term stability. Replacing the fragile organic group with more robust inorganic Cs+ cations forms the cesium lead halide system (CsPbX3 , X is halide) as all-inorganic perovskites which are much more thermally stable and often more stable to other factors. From the first report in 2015 to now, the PCE of CsPbX3 -based PSCs has abruptly increased from 2.9 % to 17.1 % with much enhanced stability. In this Review, we summarize the field up to now, propose solutions in terms of development bottlenecks, and attempt to boost further research in CsPbX3 PSCs.

On the influence of multiple cations on the in-gap states and phototransport properties of iodide-based halide perovskites.

In-gap states in solar cell absorbers that are recombination centers determine the cell's photovoltaic performance. Using scanning tunneling spectroscopy (STS), temperature-dependent photoconductivity and steady-state photocarrier-grating measurements we probed, directly and indirectly, the energies of such states, both at the surface and in the bulk of two similar, but different halide perovskites, the single cation MAPbI3 (here MAPI) and the mixed cation halide perovskite, FA0.79MA0.16Cs0.05Pb(I0.83Br0.17)3 (here MCHP). We found a correlation between the energy distribution of the in-gap states, as determined by STS measurements, and their manifestation in the photo-transport parameters of the MCHP absorbers. In particular, our results suggest that the in-gap recombination centers in the MCHP are shallower than those of MAPI. This can be one explanation for the better photovoltaic efficiency of the former.

Effects of Light and Electron Beam Irradiation on Halide Perovskites and Their Solar Cells.

Hybrid alkylammonium lead halide perovskite solar cells have, in a very few years of research, exceeded a light-to-electricity conversion efficiency of 20%, not far behind crystalline silicon cells. These perovskites do not contain any rare element, the amount of toxic lead used is very small, and the cells can be made with a low energy input. They therefore already conform to two of the three requirements for viable, commercial solar cells-efficient and cheap. The potential deal-breaker is their long-term stability. While reasonable short-term (hours) and even medium term (months) stability has been demonstrated, there is concern whether they will be stable for the two decades or more expected from commercial cells in view of the intrinsically unstable nature of these materials. In particular, they have a tendency to be sensitive to various types of irradiation, including sunlight, under certain conditions. This Account focuses on the effect of irradiation on the hybrid (and to a small degree, all-inorganic) lead halide perovskites and their solar cells. It is split up into two main sections. First, we look at the effect of electron beams on the materials. This is important, since such beams are used for characterization of both the perovskites themselves and cells made from them (electron microscopy for morphological and compositional characterization; electron beam-induced current to study cell operation mechanism; cathodoluminescence for charge carrier recombination studies). Since the perovskites are sensitive to electron beam irradiation, it is important to minimize beam damage to draw valid conclusions from such measurements. The second section treats the effect of visible and solar UV irradiation on the perovskites and their cells. As we show, there are many such effects. However, those affecting the perovskite directly need not necessarily always be detrimental to the cells, while those affecting the solar cells, which are composed of several other phases as well as the perovskite light absorber, are not always due to the perovskite itself. While we cannot yet say whether perovskite solar cells will or will not be stable over the long-term, the information in this Account should be a useful source to help achieve this goal.

Type-inversion as a working mechanism of high voltage MAPbBr3(Cl)-based halide perovskite solar cells.

Using several metals with different work functions as solar cell back contact we identify majority carrier type inversion in methylammonium lead bromide (MAPbBr3, without intentional doping) as the basis for the formation of a p-n junction. MAPbBr3 films deposited on TiO2 are slightly n-type, whereas in a full device they are strongly p-type. The charge transfer between the metal electrode and the halide perovskite (HaP) film is shown to determine the dominant charge carrier type of the HaP and, thus, also of the final cells. Usage of Pt, Au and Pb as metal electrodes shows the effects of metal work function on minority carrier diffusion length and majority carrier concentration in the HaP, as well as on built-in voltage, band bending, and open circuit voltage (VOC) within a solar cell. VOC > 1.5 V is demonstrated. The higher the metal WF, the higher the carrier concentration induced in the HaP, as indicated by a narrower space charge region and a smaller minority carrier diffusion length. From the analysis of bias-dependent electron beam-induced currents, the HaP carrier concentrations are estimated to be ∼ 1 × 1017 cm-3 with Au and 2-3 × 1018 cm-3 with Pt. A model in which type-inversion stretches across the entire film width implies formation of the p-n junction away from the interface, near the back-contact metal electrode. This work highlights the importance of the contact metal on device performance in that contact engineering can also serve to control the carrier concentration in HaP.

Why lead methylammonium tri-iodide perovskite-based solar cells require a mesoporous electron transporting scaffold (but not necessarily a hole conductor).

CH3NH3PbI3-based solar cells were characterized with electron beam-induced current (EBIC) and compared to CH3NH3PbI(3-x)Clx ones. A spatial map of charge separation efficiency in working cells shows p-i-n structures for both thin film cells. Effective diffusion lengths, LD, (from EBIC profile) show that holes are extracted significantly more efficiently than electrons in CH3NH3PbI3, explaining why CH3NH3PbI3-based cells require mesoporous electron conductors, while CH3NH3PbI(3-Clx ones, where LD values are comparable for both charge types, do not.

Crystallization of methyl ammonium lead halide perovskites: implications for photovoltaic applications.

Hybrid organic/lead halide perovskites are promising materials for solar cell fabrication, resulting in efficiencies up to 18%. The most commonly studied perovskites are CH3NH3PbI3 and CH3NH3PbI3-xClx where x is small. Importantly, in the latter system, the presence of chloride ion source in the starting solutions used for the perovskite deposition results in a strong increase in the overall charge diffusion length. In this work we investigate the crystallization parameters relevant to fabrication of perovskite materials based on CH3NH3PbI3 and CH3NH3PbBr3. We find that the addition of PbCl2 to the solutions used in the perovskite synthesis has a remarkable effect on the end product, because PbCl2 nanocrystals are present during the fabrication process, acting as heterogeneous nucleation sites for the formation of perovskite crystals in solution. We base this conclusion on SEM studies, synthesis of perovskite single crystals, and on cryo-TEM imaging of the frozen mother liquid. Our studies also included the effect of different substrates and substrate temperatures on the perovskite nucleation efficiency. In view of our findings, we optimized the procedures for solar cells based on lead bromide perovskite, resulting in 5.4% efficiency and Voc of 1.24 V, improving the performance in this class of devices. Insights gained from understanding the hybrid perovskite crystallization process can aid in rational design of the polycrystalline absorber films, leading to their enhanced performance.

Morphology-, synthesis- and doping-independent tuning of ZnO work function using phenylphosphonates.

The work function (WF) of ZnO is modified by two types of dipole-bearing phenylphosphonate layers, yielding a maximum WF span of 1.2 eV. H3CO-phenyl phosphonate, with a positive dipole (positive pole pointing outwards from the surface), lowers the WF by ∼350 meV. NC-phenyl phosphonate, with a negative dipole, increases the WF by ∼750 meV. The WF shift is found to be independent of the type of ZnO surface. XPS data show strong molecular dipoles between the phenyl and the functionalizing (CN and OMe) tail groups, while an opposite dipole evolves in each molecular layer between the surface and the phenyl rings. The molecular modification is found to be invariant to supra-bandgap illumination, which indicates that the substrate's space charge-induced built-in potential is unlikely to be the reason for the WF difference. ZnO, grown by several different methods, with different degrees of crystalline perfection and various morphologies and crystallite dimensions, could all be modified to the same extent. Furthermore, a mixture of opposite dipoles allows gradual and continuous tuning of the WF, varying linearly with the partial concentration of the CN-terminated phosphonate in the solution. Exposure to the phosphonic acids during the molecular layer deposition process erodes a few atomic layers of the ZnO. The general validity of the treatment and the fine-tuning of the WF of treated interfaces are of interest for solar cells and LED applications.

All-solid-state, semiconductor-sensitized nanoporous solar cells.

Despite the rapid increase in solar cell manufacturing capacity (~50 GW(p) in 2011), maintaining this continued expansion will require resolving some major fabrication issues. Crystalline Si, the most common type of cell, requires a large energy input in the manufacturing process, which results in an energy payback time of years. CdTe/CdS thin film cells, which have captured around 10% of the global market, may not be sustainable for very large-scale use because of limited Te availability. Thus, research in this field is emphasizing cells that are energy efficient and inexpensive and use readily available materials. The extremely thin absorber (ETA) cell, the subject of this Account, is one of these new generation cells. Since the active light absorber in an ETA cell is no more than tens of nanometers thick, the direct recombination of photogenerated electrons and holes in the absorber should not compete as much with charge removal in the form of photocurrent as in thicker absorber materials. As a result, researchers expect that poorer quality semiconductors can be used in an ETA cell, which would expand the choice of semiconductors over those currently in use. We first describe the ETA cell, comparing and contrasting it to the dye-sensitized cell (DSC) from which it developed and describing its potential advantages and disadvantages. We then explain the mechanism(s) of operation of the ETA cell, which remain controversial: different ETA cells most likely operate by different mechanisms, particularly in their photovoltage generation. We then present a general description of how we prepare ETA cells in our laboratory, emphasizing solution methods to form the various layers and solution treatments of these layers to minimize manufacturing costs. This is followed by a more specific discussion of the various layers and treatments used to make and complete a cell with emphasis on solution treatments that are important in optimizing cell performance and explaining the possible modes of action of each of these treatments. Finally, we show how ETA cells have improved over the years, their present efficiencies, our expectations for the future, and the challenges that we foresee to fulfill these expectations.

A-Site Cation Dependence of Self-Healing in Polycrystalline APbI3 Perovskite Films.

In terms of sustainable use, halide perovskite (HaP) semiconductors have a strong advantage over most other classes of materials for (opto)electronics, as they can self-heal (SH) from photodamage. While there is considerable literature on SH in devices, where it may not be clear exactly where damage and SH occur, there is much less on the HaP material itself. Here we perform "fluorescence recovery after photobleaching" (FRAP) measurements to study SH on polycrystalline thin films for which encapsulation is critical to achieving complete and fast self-healing. We compare SH in three photoactive APbI3 perovskite films by varying the A-site cation ranging from (relatively) small inorganic Cs through medium-sized MA to large FA (the last two are organic cations). While the A cation is often considered electronically relatively inactive, it significantly affects both SH kinetics and the threshold for photodamage. The SH kinetics are markedly faster for γ-CsPbI3 and α-FAPbI3 than for MAPbI3. Furthermore, γ-CsPbI3 exhibits an intricate interplay between photoinduced darkening and brightening. We suggest possible explanations for the observed differences in SH behavior. This study's results are essential for identifying absorber materials that can regain intrinsic, insolation-induced photodamage-linked efficiency loss during its rest cycles, thus enabling applications such as autonomously sustainable electronics.

Self-Healing and Light-Soaking in MAPbI3 : The Effect of H2 O.

The future of halide perovskites (HaPs) is beclouded by limited understanding of their long-term stability. While HaPs can be altered by radiation that induces multiple processes, they can also return to their original state by "self-healing." Here two-photon (2P) absorption is used to effect light-induced modifications within MAPbI3 single crystals. Then the changes in the photodamaged region are followed by measuring the photoluminescence, from 2P absorption with 2.5 orders of magnitude lower intensity than that used for photodamaging the MAPbI3 . After photodamage, two brightening and one darkening process are found, all of which recover but on different timescales. The first two are attributed to trap-filling (the fastest) and to proton-amine-related chemistry (the slowest), while photodamage is attributed to the lead-iodide sublattice. Surprisingly, while after 2P-irradiation of crystals that are stored in dry, inert ambient, photobrightening (or "light-soaking") occurs, mostly photodarkening is seen after photodamage in humid ambient, showing an important connection between the self-healing of a HaP and the presence of H2 O, for long-term steady-state illumination, practically no difference remains between samples kept in dry or humid environments. This result suggests that photobrightening requires a chemical-reservoir that is sensitive to the presence of H2 O, or possibly other proton-related, particularly amine, chemistry.

In Operando, Photovoltaic, and Microscopic Evaluation of Recombination Centers in Halide Perovskite-Based Solar Cells.

The origin of the low densities of electrically active defects in Pb halide perovskite (HaP), a crucial factor for their use in photovoltaics, light emission, and radiation detection, remains a matter of discussion, in part because of the difficulty in determining these densities. Here, we present a powerful approach to assess the defect densities, based on electric field mapping in working HaP-based solar cells. The minority carrier diffusion lengths were deduced from the electric field profile, measured by electron beam-induced current (EBIC). The EBIC method was used earlier to get the first direct evidence for the n-i-p junction structure, at the heart of efficient HaP-based PV cells, and later by us and others for further HaP studies. This manuscript includes EBIC results on illuminated cell cross sections (in operando) at several light intensities to compare optoelectronic characteristics of different cells made by different groups in several laboratories. We then apply a simple, effective single-level defect model that allows deriving the densities (Nr) of the defect acting as recombination center. We find Nr ≈ 1 × 1013 cm-3 for mixed A cation lead bromide-based HaP films and ∼1 × 1014 cm-3 for MAPbBr3(Cl). As EBIC photocurrents are similar at the grain bulk and boundaries, we suggest that the defects are at the interfaces with selective contacts rather than in the HaP film. These results are relevant for photovoltaic devices as the EBIC responses distinguish clearly between high- and low-efficiency devices. The most efficient devices have n-i-p structures with a close-to-intrinsic HaP film, and the selective contacts then dictate the electric field strength throughout the HaP absorber.

Response to Comment on "Eppur si Muove: Proton Diffusion in Halide Perovskite Single Crystals": Measure What is Measurable, and Make Measurable What is Not So: Discrepancies between Proton Diffusion in Halide Perovskite Single Crystals and Thin Films.

Buffeteau et al. note that the proton diffusion coefficient in MAPbI3 that is deduced (by the authors) from results, obtained by a suite of complementary techniques, on a large number of single crystals (Adv. Mater. 2020, 32, 2002467) is 5 orders of magnitude higher than what is estimated (by them) in J. Am. Chem. Soc. 2020, 142, 10431, from infrared spectroscopy on ultrathin MAPbI3 films; use of (deuterium/hydrogen) D/H isotope substitution is common to both studies. Buffeteau et al. speculated that proton diffusion in halide perovskite single crystals is dominated by 1D defects, which will somehow not be present in thin films, as those are made up of small-sized crystallites. It is shown here that the idea of a 1D defect is not supported by the body of experimental data gathered on these crystals, that the statistical analysis employed in to Buffeteau et al. to support the criticism is problematic, and it is concluded that the source of the difference must lie elsewhere. Constructive suggestions for this difference are provided and experiments to discern between possible reasons for it are proposed.

Flexible Diodes/Transistors Based on Tunable p-n-Type Semiconductivity in Graphene/Mn-Co-Ni-O Nanocomposites.

We report a novel Mn-Co-Ni-O (MCN) nanocomposite in which the p-type semiconductivity of Mn-Co-Ni-O can be manipulated by addition of graphene. With an increase of graphene content, the semiconductivity of the nanocomposite can be tuned from p-type through electrically neutral to n-type. The very low effective mass of electrons in graphene facilitates electron tunneling into the MCN, neutralizing holes in the MCN nanoparticles. XPS analysis shows that the multivalent manganese ions in the MCN nanoparticles are chemically reduced by the graphene electrons to lower-valent states. Unlike traditional semiconductor devices, electrons are excited from the filled graphite band into the empty band at the Dirac points from where they move freely in the graphene and tunnel into the MCN. The new composite film demonstrates inherent flexibility, high mobility, short carrier lifetime, and high carrier concentration. This work is useful not only in manufacturing flexible transistors, FETs, and thermosensitive and thermoelectric devices with unique properties but also in providing a new method for future development of 2D-based semiconductors.

Effect of glass dissolution on the solution deposition of ZnO films and its exploitation for deposition of Zn silicates.

ZnO is probably the most studied material deposited as films by aqueous solution methods. Both neutral and alkaline solutions are commonly used, and deposition is often carried out in glass vessels. We show that for depositions carried out under alkaline conditions, slow dissolution of the glass by the solution often results in formation of zinc silicates together with the ZnO. While this silicate formation is most clearly seen after long deposition times (many hours), it can be detected already within 1 h, while often ZnO depositions proceed for substantially longer. We also describe conditions where the zinc silicate deposits without formation of ZnO providing a method of depositing such films. Finally, we note that the glass of a reaction vessel also can affect deposition of CdSe, pointing to a more general role of this normally neglected parameter.

Eppur si Muove: Proton Diffusion in Halide Perovskite Single Crystals.

Ion diffusion affects the optoelectronic properties of halide-perovskites (HaPs). Until now, the fastest diffusion has been attributed to the movement of the halides, largely neglecting the contribution of protons, on the basis of computed density estimates. Here, the process of proton diffusion inside HaPs, following deuterium-hydrogen exchange and migration in MAPbI3 , MAPbBr3 , and FAPbBr3 single crystals, is proven through D/H NMR quantification, Raman spectroscopy, and elastic recoil detection analysis, challenging the original assumption of halide-dominated diffusion. The results are confirmed by impedance spectroscopy, where MAPbBr3 - and CsPbBr3 -based solar cells respond at very different frequencies. Water plays a key role in allowing the migration of protons as deuteration is not detected in its absence. The water contribution is modeled to explain and forecast its effect as a function of its concentration in the perovskite structure. These findings are of great importance as they evidence how unexpected, water-dependent proton diffusion can be at the basis of the ≈7 orders of magnitude spread of diffusion (attributed to I- and Br- ) coefficient values, reported in the literature. The reported enhancement of the optoelectronic properties of HaP when exposed to small amounts of water may be related to the finding.

Impact of SnF2 Addition on the Chemical and Electronic Surface Structure of CsSnBr3.

We report on the chemical and electronic structure of cesium tin bromide (CsSnBr3) and how it is impacted by the addition of 20 mol % tin fluoride (SnF2) to the precursor solution, using both surface-sensitive lab-based soft X-ray photoelectron spectroscopy (XPS) and near-surface bulk-sensitive synchrotron-based hard XPS (HAXPES). To determine the reproducibility and reliability of conclusions, several (nominally identically prepared) sample sets were investigated. The effects of deposition reproducibility, handling, and transport are found to cause significant changes in the measured properties of the films. Variations in the HAXPES-derived compositions between individual sample sets were observed, but in general, they confirm that the addition of 20 mol % SnF2 improves coverage of the titanium dioxide substrate by CsSnBr3 and decreases the oxidation of SnII to SnIV while also suppressing formation of secondary Br and Cs species. Furthermore, the (surface) composition is found to be Cs-deficient and Sn-rich compared to the nominal stoichiometry. The valence band (VB) shows a SnF2-induced redistribution of Sn 5s-derived density of states, reflecting the changing SnII/SnIV ratio. Notwithstanding some variability in the data, we conclude that SnF2 addition decreases the energy difference between the VB maximum of CsSnBr3 and the Fermi level, which we explain by defect chemistry considerations.

Metal-Free Halide Perovskite Single Crystals with Very Long Charge Lifetimes for Efficient X-ray Imaging.

Metal-free halide perovskites, as a specific category of the perovskite family, have recently emerged as novel semiconductors for organic ferroelectrics and promise the wide chemical diversity of the ABX3 perovskite structure with mechanical flexibility, light weight, and eco-friendly processing. However, after the initial discovery 17 years ago, there has been no experimental information about their charge transport properties and only one brief mention of their optoelectronic properties. Here, growth of large single crystals of metal-free halide perovskite DABCO-NH4 Br3 (DABCO = N-N'-diazabicyclo[2.2.2]octonium) is reported together with characterization of their instrinsic optical and electronic properties and demonstration, of metal-free halide perovskite optoelectronics. The results reveal that the crystals have an unusually large semigap of ≈16 eV and a specific band nature with the valence band maximum and the conduction band minimum mainly dominated by the halide and DABCO2+ , respectively. The unusually large semigap rationalizes extremely long lifetimes approaching the millisecond regime, leading to very high charge diffusion lengths (tens of µm). The crystals also exhibit high X-ray attenuation as well as being lightweight. All these properties translate to high-performance X-ray imaging with sensitivity up to 173 µC Gyair -1 cm-2 . This makes metal-free perovskites novel candidates for the next generation of optoelectronics.