Detalhe da pesquisa
1.
Physics, Structures, and Applications of Fluorite-Structured Ferroelectric Tunnel Junctions.
Small
; 20(9): e2305271, 2024 Mar.
Artigo
em Inglês
| MEDLINE | ID: mdl-37863823
2.
End-to-End Lip-Reading Open Cloud-Based Speech Architecture.
Sensors (Basel)
; 22(8)2022 Apr 12.
Artigo
em Inglês
| MEDLINE | ID: mdl-35458932
3.
End-to-End Sentence-Level Multi-View Lipreading Architecture with Spatial Attention Module Integrated Multiple CNNs and Cascaded Local Self-Attention-CTC.
Sensors (Basel)
; 22(9)2022 May 09.
Artigo
em Inglês
| MEDLINE | ID: mdl-35591284
4.
Noise-Robust Multimodal Audio-Visual Speech Recognition System for Speech-Based Interaction Applications.
Sensors (Basel)
; 22(20)2022 Oct 12.
Artigo
em Inglês
| MEDLINE | ID: mdl-36298089
5.
Effect of Ga composition on mobility in a-InGaZnO thin-film transistors.
Nanotechnology
; 32(9): 095201, 2021 Feb 26.
Artigo
em Inglês
| MEDLINE | ID: mdl-33075761
6.
Lipreading Architecture Based on Multiple Convolutional Neural Networks for Sentence-Level Visual Speech Recognition.
Sensors (Basel)
; 22(1)2021 Dec 23.
Artigo
em Inglês
| MEDLINE | ID: mdl-35009612
7.
Broad spectral responsivity in highly photoconductive InZnO/MoS2 heterojunction phototransistor with ultrathin transparent metal electrode.
Nanotechnology
; 31(3): 035201, 2020 Jan 17.
Artigo
em Inglês
| MEDLINE | ID: mdl-31626594
8.
Comprehensive study of high pressure annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films.
Nanotechnology
; 30(50): 505204, 2019 Dec 13.
Artigo
em Inglês
| MEDLINE | ID: mdl-31426039
9.
The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2.
Nanotechnology
; 29(33): 335201, 2018 Aug 17.
Artigo
em Inglês
| MEDLINE | ID: mdl-29786620
10.
Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method.
Nanotechnology
; 29(17): 175704, 2018 Apr 27.
Artigo
em Inglês
| MEDLINE | ID: mdl-29176037
11.
Effect of dysprosium and lutetium metal buffer layers on the resistive switching characteristics of Cu-Sn alloy-based conductive-bridge random access memory.
Nanotechnology
; 29(38): 385207, 2018 Sep 21.
Artigo
em Inglês
| MEDLINE | ID: mdl-29911987
12.
Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching.
Nanotechnology
; 29(23): 235202, 2018 Jun 08.
Artigo
em Inglês
| MEDLINE | ID: mdl-29629710
13.
Determination of intrinsic mobility of a bilayer oxide thin-film transistor by pulsed I-V method.
Nanotechnology
; 28(17): 175201, 2017 Apr 28.
Artigo
em Inglês
| MEDLINE | ID: mdl-28357990
14.
Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of states.
Nanotechnology
; 27(21): 215203, 2016 May 27.
Artigo
em Inglês
| MEDLINE | ID: mdl-27094772
15.
Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors.
Nanotechnology
; 27(32): 325203, 2016 Aug 12.
Artigo
em Inglês
| MEDLINE | ID: mdl-27363543
16.
Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory.
Nano Lett
; 15(9): 5875-82, 2015 Sep 09.
Artigo
em Inglês
| MEDLINE | ID: mdl-26226506
17.
Dislocation scatterings in p-type Si(1-x)Ge(x) under weak electric field.
Nanotechnology
; 26(49): 495201, 2015 Dec 11.
Artigo
em Inglês
| MEDLINE | ID: mdl-26567870
18.
Graphene and thin-film semiconductor heterojunction transistors integrated on wafer scale for low-power electronics.
Nano Lett
; 13(12): 5967-71, 2013.
Artigo
em Inglês
| MEDLINE | ID: mdl-24256403
19.
Monolithically Integrated Complementary Ferroelectric FET XNOR Synapse for the Binary Neural Network.
ACS Appl Mater Interfaces
; 16(2): 2467-2476, 2024 Jan 17.
Artigo
em Inglês
| MEDLINE | ID: mdl-38175955
20.
Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays.
Nat Mater
; 11(4): 301-5, 2012 Feb 26.
Artigo
em Inglês
| MEDLINE | ID: mdl-22367002