Face-selective electrostatic control of hydrothermal zinc oxide nanowire synthesis.

Rational control over the morphology and the functional properties of inorganic nanostructures has been a long-standing goal in the development of bottom-up device fabrication processes. We report that the geometry of hydrothermally grown zinc oxide nanowires can be tuned from platelets to needles, covering more than three orders of magnitude in aspect ratio (~0.1-100). We introduce a classical thermodynamics-based model to explain the underlying growth inhibition mechanism by means of the competitive and face-selective electrostatic adsorption of non-zinc complex ions at alkaline conditions. The performance of these nanowires rivals that of vapour-phase-grown nanostructures, and their low-temperature synthesis (<60 °C) is favourable to the integration and in situ fabrication of complex and polymer-supported devices. We illustrate this capability by fabricating an all-inorganic light-emitting diode in a polymeric microfluidic manifold. Our findings indicate that electrostatic interactions in aqueous crystal growth may be systematically manipulated to synthesize nanostructures and devices with enhanced structural control.

Silicon nanotube battery anodes.

We present Si nanotubes prepared by reductive decomposition of a silicon precursor in an alumina template and etching. These nanotubes show impressive results, which shows very high reversible charge capacity of 3247 mA h/g with Coulombic efficiency of 89%, and also demonstrate superior capacity retention even at 5C rate (=15 A/g). Furthermore, the capacity in a Li-ion full cell consisting of a cathode of LiCoO2 and anode of Si nanotubes demonstrates a 10 times higher capacity than commercially available graphite even after 200 cycles.

Nanoscale patterning on insulating substrates by critical energy electron beam lithography.

This Letter describes a method to generate nanometer scale patterns on insulating substrates and wide band gap materials using critical energy electron beam lithography. By operating at the critical energy (E2) where a charge balance between incoming and outgoing electrons leaves the surface neutral, charge-induced pattern distortions typically seen in e-beam lithography on insulators were practically eliminated. This removes the need for conductive dissipation layers or differentially pumped e-beam columns with sophisticated gas delivery systems to control charging effects. Using a "scan square" method to find the critical energy, sub-100 nm features in 65 nm thick poly(methyl methacrylate) on glass were achieved at area doses as low as 10 microC/cm2 at E2 = 1.3 keV. This method has potential applications in high-density biochips, flexible electronics, and optoelectronics and may improve the fidelity of low voltage e-beam lithography for parallel microcolumn arrays.