The photonics and optics workforce: unleashing the potential for greater industry growth-introduction to the feature issue.

This feature issue highlights specific photonics and optics workforce challenges, opportunities for industry support, and state-of-the-art-training methods.

From ray optics to modal analysis: using photonics web simulations to build intuition and address common misconceptions.

The emerging field of silicon photonics has created a large need for Ph.D. photonic integrated circuit design engineers. Developing intuition for electromagnetic waves at the micron scale is a major challenge facing undergraduate and graduate students in photonics. Students often misapply lessons learned from macroscale ray optics to submicron waveguide modes in dielectric structures. In this work, key student misconceptions were identified and addressed in a research study using photonics training simulations. A learning module with interactive 3D vector field visualizations was deployed in a massive open online course to train the next generation of photonics design engineers.

Adaptable middle-skilled labor: a neglected roadblock to photonics industry growth.

A roadblock to long-term growth of the photonics industry is the availability of well-trained, adaptable middle-skilled workers. This research characterizes the middle-skilled workforce gap, including the quantity required and skills needed. We estimate that 42,000 new technical middle-skilled workers are needed by 2030, requiring another 100 technician programs nationwide. Training skills along the supply chain are critical; programs must emphasize testing, troubleshooting, and process design. Middle-skilled workers trained in critical thinking will enable an adaptable workforce capable of handling technology evolution. Finally, recommendations for the academia, industry, and middle-skilled training ecosystem are included to ensure that the latter evolves with technology development.

Virtual reality enabled asynchronous learning modules for fiber optic preform manufacturing education.

The demand for skilled workers and novel manufacturing training solutions has increased with the growing demand for fiber optic cables. Web-based simulations can be used for training, and this paper presents an approach for developing a fiber preform manufacturing browser-based VR simulation. Subsequently, a study was conducted to evaluate the effectiveness of the simulation based on learning gains and learner perception of ease of use, usefulness, intention of use, learning outcomes, and workload. A mixed-methods between-subjects study with 63 participants found that the combination of lecture and simulation was significantly better for perceived usefulness and learning outcomes compared to lecture-only or lecture-and-video conditions.

Mid-IR supercontinuum generated in low-dispersion Ge-on-Si waveguides pumped by sub-ps pulses.

Ge-on-Si is an attractive material platform for mid-IR broadband sources on a chip because of its wide transparency window, high Kerr nonlinearity and CMOS compatibility. We present a low-loss Ge-on-Si waveguide with flat and low dispersion from 3 to 11 µm, which enables a coherent supercontinuum from 2 to 12 µm, generated using a sub-ps pulsed pump. We show that 700-fs pump pulses with a low peak power of 400 W are needed to generate such a wide supercontinuum, and the waveguide length is around 5.35 mm.

Loss reduction of silicon-on-insulator waveguides for deep mid-infrared applications.

We report that propagation loss of optical waveguides based on a silicon-on-insulator (SOI) material platform can be greatly reduced. Our simulations show that the loss, including SiO2 absorption and substrate leakage, but no scattering loss, is 0.024 and 0.53 dB/cm in the deep mid-infrared at 4.8 and 7.1 µm wavelengths, where the material absorption in SiO2 is 100 and 1000 dB/cm, respectively. The loss becomes negligible, compared to scattering loss in Si waveguides. This is enabled by using the TE10 mode in a pedestal waveguide. We also show that the TE10 mode can be excited in the proposed waveguide by the fundamental mode with a coupling efficiency of >94%. Low propagation loss, high coupling efficiency, and fabrication-friendly design would make it promising for practical use of SOI devices in the deep mid-infrared.

Bilayer dispersion-flattened waveguides with four zero-dispersion wavelengths.

We propose a new type of bilayer dispersion-flattened waveguides that have four zero-dispersion wavelengths. Low and flat dispersion can be achieved by using two different material combinations, with a much smaller index contrast as compared to the previously proposed slot-assisted dispersion-flattened waveguides. Without using a nano-slot, dispersion becomes less sensitive to waveguide dimensions, which is highly desirable for high-yield device fabrication. Ultra-low dispersion, high nonlinearity, and fabrication-friendly design would make it promising for practical implementation of nonlinear photonic functions. The proposed waveguide configuration deepens our understanding of the dispersion flattening principle.

Effect of a breather soliton in Kerr frequency combs on optical communication systems.

In this study, we numerically investigate the effect of Kerr-comb-generated breather soliton pulses on optical communication systems. The breather soliton pulse amplitude and spectrum envelope oscillate periodically in time. Simulations show that the spectrum of each comb line in the breather soliton state has multiple sub-teeth due to the periodic oscillation of the comb spectrum. In the simulation, the comb output is modulated with different formats. We find that the sub-teeth distort quadrature phase-shift-keyed signals but have less of an effect on on-off-keyed signals.

Soliton breathing induced by stimulated Raman scattering and self-steepening in octave-spanning Kerr frequency comb generation.

We investigate the impact of stimulated Raman scattering (SRS) and self-steepening (SS) on breather soliton dynamics in octave-spanning Kerr frequency comb generation. SRS and SS can transform chaotic fluctuations in cavity solitons into periodic breathing. Furthermore, with SRS and SS considered, bandwidth of the soliton breathes more than two times stronger. The simultaneous presence of SRS and SS also make the soliton breathe slower and degrades the coherence of the soliton.

Mid-infrared spectrometer using opto-nanofluidic slot-waveguide for label-free on-chip chemical sensing.

A mid-infrared (mid-IR) spectrometer for label-free on-chip chemical sensing was developed using an engineered nanofluidic channel consisting of a Si-liquid-Si slot-structure. Utilizing the large refractive index contrast (Δn ∼ 2) between the liquid core of the waveguide and the Si cladding, a broadband mid-IR lightwave can be efficiently guided and confined within a nanofluidic capillary (≤100 nm wide). The optical-field enhancement, together with the direct interaction between the probe light and the analyte, increased the sensitivity for chemical detection by 50 times when compared to evanescent-wave sensing. This spectrometer distinguished several common organic liquids (e.g., n-bromohexane, toluene, isopropanol) accurately and could determine the ratio of chemical species (e.g., acetonitrile and ethanol) at low concentration (<5 µL/mL) in a mixture through spectral scanning over their characteristic absorption peaks in the mid-IR regime. The combination of CMOS-compatible planar mid-IR microphotonics, and a high-throughput nanofluidic sensor system, provides a unique platform for chemical detection.

A nonreciprocal racetrack resonator based on vacuum-annealed magnetooptical cerium-substituted yttrium iron garnet.

Vacuum annealed polycrystalline cerium substituted yttrium iron garnet (CeYIG) films deposited by radio frequency magnetron sputtering on non-garnet substrates were used in nonreciprocal racetrack resonators. CeYIG annealed at 800°C for 30 min provided a large Faraday rotation angle, close to the single crystal value. Crystallinity, magnetic properties, refractive indices and absorption coefficients were measured. The resonant transmission peak of the racetrack resonator covered with CeYIG was non-reciprocally shifted by applying an in-plane magnetic field.

Nonlinear conversion efficiency in Kerr frequency comb generation.

We analytically and numerically investigate the nonlinear conversion efficiency in ring microresonator-based mode-locked frequency combs under different dispersion conditions. Efficiency is defined as the ratio of the average round trip energy values for the generated pulse(s) to the input pump light. We find that the efficiency degrades with growth of the comb spectral width and is inversely proportional to the number of comb lines. It depends on the cold-cavity properties of a microresonator only and can be improved by increasing the coupling coefficient. Also, it can be increased in the multi-soliton state.

Mid-infrared materials and devices on a Si platform for optical sensing.

In this article, we review our recent work on mid-infrared (mid-IR) photonic materials and devices fabricated on silicon for on-chip sensing applications. Pedestal waveguides based on silicon are demonstrated as broadband mid-IR sensors. Our low-loss mid-IR directional couplers demonstrated in SiN x waveguides are useful in differential sensing applications. Photonic crystal cavities and microdisk resonators based on chalcogenide glasses for high sensitivity are also demonstrated as effective mid-IR sensors. Polymer-based functionalization layers, to enhance the sensitivity and selectivity of our sensor devices, are also presented. We discuss the design of mid-IR chalcogenide waveguides integrated with polycrystalline PbTe detectors on a monolithic silicon platform for optical sensing, wherein the use of a low-index spacer layer enables the evanescent coupling of mid-IR light from the waveguides to the detector. Finally, we show the successful fabrication processing of our first prototype mid-IR waveguide-integrated detectors.

Air-clad silicon pedestal structures for broadband mid-infrared microphotonics.

Toward mid-infrared (mid-IR) silicon microphotonic circuits, we demonstrate broadband on-chip silicon structures, such as: (i) straight and bent waveguides and (ii) beam splitters, utilizing an air-clad pedestal configuration which eliminates the need for typical mid-IR-lossy oxide cladding. We illustrate a sophisticated fabrication process that can create high-quality pedestal structures in crystalline silicon, while preserving its mid-IR transparency. A fundamental waveguide mode is observed between λ=2.5 µm and λ=3.7 µm, and an optical loss of 2.7 dB/cm is obtained at λ=3.7 µm. Our pedestal silicon structures show 50:50 mid-IR power splitting enabling the further development of mid-IR silicon microphotonics.

Infrared absorption of n-type tensile-strained Ge-on-Si.

We analyze the IR absorption of tensile-strained, n-type Ge for Si-compatible laser applications. A strong intervalley scattering from the indirect L valleys to the direct Γ valley in n+ Ge-on-Si is reported for the first time to our knowledge. The intervalley absorption edge is in good agreement with the theoretical value. On the other hand, we found that the classical λ2-dependent Drude model of intravalley free-carrier absorption (FCA) breaks down at λ<15 µm. A first-principle model has to be employed to reach a good agreement with the experimental data. The intravalley FCA loss is determined to be <20 cm(-1) for n=4×10(19) cm(-3) at λ=1.5-1.7 µm, an order lower than the results from Drude model. The strong Lâ†’Γ intervalley scattering favors electronic occupation of the direct Γ valley, thereby enhancing optical gain from the direct gap transition of Ge, while the low intravalley free-electron absorption at lasing wavelengths leads to low optical losses. These two factors explain why the first electrically pumped Ge-on-Si laser achieved a higher net gain than the theoretical prediction using λ2-dependent free-carrier losses of bulk Ge and indicate the great potential for further improvement of Ge-on-Si lasers.

Generation of two-cycle pulses and octave-spanning frequency combs in a dispersion-flattened micro-resonator.

We show that octave-spanning Kerr frequency combs with improved spectral flatness of comb lines can be generated in dispersion-flattened microring resonators. The resonator is formed by a strip/slot hybrid waveguide, exhibiting a flat and low anomalous dispersion between two zero-dispersion wavelengths that are separated by one octave from near-infrared to mid-infrared. Such flattened dispersion profiles allow for the generation of mode-locked frequency combs, using relatively low pump power to obtain two-cycle cavity solitons on a chip, associated with the octave-spanning comb bandwidth. The wavelength dependence of the optical loss and of the coupling coefficient and thus wavelength dependent Q-factor are also considered.

Demonstration of high-Q mid-infrared chalcogenide glass-on-silicon resonators.

We demonstrated high-index-contrast, waveguide-coupled As2Se3 chalcogenide glass resonators monolithically integrated on silicon fabricated using optical lithography and a lift-off process. The resonators exhibited a high intrinsic quality factor of 2×10(5) at 5.2 µm wavelength, which is among the highest values reported in on-chip mid-infrared (mid-IR) photonic devices. The resonator can serve as a key building block for mid-IR planar photonic circuits.

Light trapping limits in plasmonic solar cells: an analytical investigation.

We analytically investigate the light trapping performance in plasmonic solar cells with Si/metallic structures. We consider absorption enhancements for surface plasmon polaritons (SPPs) at planar Si/metal interfaces and localized surface plasmon resonances (LSPRs) for metallic spheres in a Si matrix. We discover that the enhancement factors at Si/metal interfaces are not bound to the conventional Lambertian limit, and strong absorption can be achieved around plasmonic resonant frequencies. In addition, those enhancements are greatly reduced as the fields decay away from the Si/metal interfaces. Therefore, localized plasmonic resonances can be used as efficient light trapping schemes for ultrathin Si solar cells (< 50 nm), while photonic guided mode enhancement is more appropriate for thicker films.

Co-polymer clad design for high performance athermal photonic circuits.

Ubiquitous, low power consumption and high bandwidth density communication will require passive athermal optical filters for WDM transceivers in Si-CMOS architecture. Two silicon-polymer composite structures, deposited using initiated chemical vapor deposition (iCVD), poly(perfluorodecyl acrylate) (pPFDA) and poly(perfluorodecyl acrylate-co-divinyl benzene) p(PFDA-co-DVB), are analyzed as candidates for thermal compensation. The addition of DVB to a fluorinated acrylate backbone reduces the C-F bond density, increases the density in the copolymer and thereby increases refractive index. The addition of DVB also increases the volume expansion coefficient of the copolymer, resulting in an increased thermo-optic (TO) coefficient for the copolymer system. The increased index and TO coefficient of the co-polymer gives improved bend loss, footprint and FSR performance for athermal silicon photonic circuits.

An electrically pumped germanium laser.

Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x1019cm-3 is achieved. A Germanium gain spectrum of nearly 200nm is observed.