Characterization of Angle Accuracy and Precision of 3-Degree-of-Freedom Absolute Encoder Based on NanoGPS OxyO Technology.

An absolute encoder based on vision system nanoGPS OxyO was developed by HORIBA France. This encoder provides three types of position information, namely, two inplane co-ordinates and inplane angular orientation. This paper focuses on the characterization of its angular performance. To this aim, the nanoGPS OxyO system was compared with the national angle standard of the National Metrology Institute of Italy (INRIM) that had evaluated accuracy of about 0.1 µrad. The effect of image size and illumination conditions on angular measurements was studied. Precision better than 10 µrad and accuracy better than 63 µrad over 2π rotation were demonstrated. Moreover, the application of nanoGPS OxyO to the characterization of rotation bearing is presented. Small deviations from pure rotational behavior were evidenced that would have not been possible using laser interferometers. As a consequence of its accuracy and versatility, the nanoGPS OxyO encoder is expected to be useful for laboratory experiments and quality-control tasks.

Band Gap Opening Induced by the Structural Periodicity in Epitaxial Graphene Buffer Layer.

The epitaxial graphene buffer layer on the Si face of hexagonal SiC shows a promising band gap, of which the precise origin remains to be understood. In this work, we correlate the electronic to the atomic structure of the buffer layer by combining angle resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and high-resolution scanning transmission electron microscopy (HR-STEM). We show that the band structure in the buffer has an electronic periodicity related to the structural periodicity observed in STM images and published X-ray diffraction. Our HR-STEM measurements show the bonding of the buffer layer to the SiC at specific locations separated by 1.5 nm. This is consistent with the quasi 6 × 6 periodic corrugation observed in the STM images. The distance between buffer C and SiC is 1.9 Å in the bonded regions and up to 2.8 Å in the decoupled regions, corresponding to a 0.9 Å corrugation of the buffer layer. The decoupled regions are sp2 hybridized. Density functional tight binding (DFTB) calculations demonstrate the presence of a gap at the Dirac point everywhere in the buffer layer, even in the decoupled regions where the buffer layer has an atomic structure close to that of graphene. The surface periodicity also promotes band in the superperiodic Brillouin zone edges as seen by photoemission and confirmed by our calculations.

Moiré method for nanometer instability investigation of scanning hard x-ray microscopes.

We present a Moiré method that can be used to investigate positional instabilities in a scanning hard x-ray microscope with nanometer precision. The development of diffraction-limited storage rings offering highly-brilliant synchrotron radiation and improvements of nanofocusing x-ray optics paves the way towards 3D nanotomography with 10 nm resolution or below. However, this trend demands improved designs of x-ray microscope instruments which should offer few-nm beam stabilities with respect to the sample. Our technique can measure the position of optics and sample stage relative to each other in the two directions perpendicular to the beam propagation in a scanning x-ray microscope using simple optical components and visible light. The usefulness of the method was proven by measuring short and long term instabilities of a zone-plate-optics-based prototype microscope. We think it can become an important tool for the characterization of scanning x-ray microscopes, especially prior to experiments with an actual x-ray beam.

Phase transition and thermal stability of epitaxial PtSe2 nanolayer on Pt(111).

This work relates to direct synthesis of the two-dimensional (2D) transition metal dichalchogenide (TMD) PtSe2 using an original method based on chemical deposition during immersion of a Pt(111) surface into aqueous Na2Se solution. Annealing of the sample induces significant modifications in the structural and electronic properties of the resulting PtSe2 film. We report systematic investigations of temperature dependent phase transitions by combining synchrotron based high-resolution X-ray photoemission (XPS), low temperature scanning tunnelling microscopy (LT-STM) and low energy electron diffraction (LEED). From the STM images, a phase transition from TMD 2H-PtSe2 to Pt2Se alloy monolayer structure is observed, in agreement with the LEED patterns showing a transition from (4 × 4) to (√3 × âˆš3)R30° and then to a (2 × 2) superstructure. This progressive evolution of the surface reconstruction has been monitored by XPS through systematic de-convolution of the Pt4f and Se3d core level peaks at different temperatures. The present work provides an alternative method for the large scale fabrication of 2D transition metal dichalchogenide films.

Interferometric characterization of rotation stages for X-ray nanotomography.

The field of three-dimensional multi-modal X-ray nanoimaging relies not only on high-brilliance X-rays but also on high-precision mechanics and position metrology. Currently available state-of-the-art linear and rotary drives can provide 3D position accuracy within tens to hundreds of nm, which is often insufficient for high resolution imaging with nanofocused X-ray beams. Motion errors are especially troublesome in the case of rotation drives and their correction is more complicated and relies on the metrology grade reference objects. Here we present a method which allows the characterisation and correction of the radial and angular errors of the rotary drives without the need for a highly accurate metrology object. The method is based on multi-probe error separation using fiber-laser interferometry and uses a standard cylindrical sample holder as a reference. The obtained runout and shape measurements are then used to perform the position corrections using additional drives. We demonstrate the results of the characterization for a piezo-driven small rotation stage. The error separation allowed us to measure the axis runout to be approximately ±1.25 µm, and with active runout compensation this could be reduced down to ±42 nm.

Case studies on the formation of chalcogenide self-assembled monolayers on surfaces and dissociative processes.

This report examines the assembly of chalcogenide organic molecules on various surfaces, focusing on cases when chemisorption is accompanied by carbon-chalcogen atom-bond scission. In the case of alkane and benzyl chalcogenides, this induces formation of a chalcogenized interface layer. This process can occur during the initial stages of adsorption and then, after passivation of the surface, molecular adsorption can proceed. The characteristics of the chalcogenized interface layer can be significantly different from the metal layer and can affect various properties such as electron conduction. For chalcogenophenes, the carbon-chalcogen atom-bond breaking can lead to opening of the ring and adsorption of an alkene chalcogenide. Such a disruption of the π-electron system affects charge transport along the chains. Awareness about these effects is of importance from the point of view of molecular electronics. We discuss some recent studies based on X-ray photoelectron spectroscopy that shed light on these aspects for a series of such organic molecules.

Surface reactions of 3-butenenitrile on the Si(001)-2 x 1 surface at room temperature.

Using a combination of local -- scanning tunneling microscopy -- and spatially integrated, but chemically sensitive probes -- X-ray photoelectron spectroscopy and near edge X-ray absorption fine structure spectroscopy -- we have examined how 3-butenenitrile reacts with the Si(001)-2 x 1 surface at room temperature. Electron spectroscopies indicate three different nitrogen chemical bonds: a Si-C=N-Si bond, a C=C=N cumulative double bond, and a CN moiety datively bonded to a silicon atom. All molecular imprints detected by scanning tunneling microscopy (STM) involve two adjacent silicon dimers in the same row. The three geometries we propose -- a double di-sigma bonding via the CN and the C=C, a cumulative double bond formation associated with alphaC-H bond dissociation, and a di-sigma vinyl bonding plus a CN datively bonded to a silicon atom -- are all compatible with electron spectroscopies and data. Real-time Auger yield kinetic measurements show that the double di-sigma bonding geometry is unstable when exposed to a continuous flux of 3-butenenitrile molecules, as the Si-C=N-Si unit transforms into a CN moiety. A model is proposed to explain this observation.

Propanoate grafting on (H,OH)-Si(0 0 1)-2 × 1.

We have examined the reactivity of water-covered Si(0 0 1)-2 × 1, (H,OH)-Si(0 0 1)-2 × 1, with propanoic (C2H5COOH) acid at room temperature. Using a combination of spectroscopic techniques probing the electronic structure (XPS, NEXAFS) and the vibrational spectrum (HREELS), we have proved that the acid is chemisorbed on the surface as a propanoate. Once the molecule is chemisorbed, the strong perturbation of the electronic structure of the hydroxyls, and of their vibrational spectrum, suggests that the molecule makes hydrogen bonds with the surrounding hydroxyls. As we find evidence that surface hydroxyls are involved in the adsorption reaction, we discuss how a concerted or a radical-mediated reaction (involving the surface silicon dangling bonds) could lead to water elimination and formation of the ester.