Switchable Xe/Kr Selectivity in a Hofmann-Type Metal-Organic Framework via Temperature-Responsive Rotational Dynamics.

The development of adsorbents for Kr and Xe separation is essential to meet industrial demands and for energy conservation. Although a number of previous studies have focused on Xe-selective adsorbents, stimuli-responsive Xe/Kr-selective adsorbents still remain underdeveloped. Herein, a Hofmann-type framework Co(DABCO)[Ni(CN)4 ] (referred to as CoNi-DAB; DABCO = 1,4-diazabicyclo[2,2,2]octane) that provides a temperature-dependent switchable Xe/Kr separation performance is reported. CoNi-DAB showed high Kr/Xe (0.8/0.2) selectivity with significant Kr adsorption at 195 K as well as high Xe/Kr (0.2/0.8) selectivity with superior Xe adsorption at 298 K. Such adsorption features are associated with the temperature-dependent rotational configuration of the DABCO ligand, which affects the kinetic gate-opening temperature of Xe and Kr. The packing densities of Xe (2.886 g cm-3 at 298 K) and Kr (2.399 g  cm-3 at 195 K) inside the framework are remarkable and comparable with those of liquid Xe (3.057 g cm-3 ) and liquid Kr (2.413 g cm-3 ), respectively. Breakthrough experiments confirm the temperature-dependent reverse separation performance of CoNi-DAB at 298 K under dry and wet (88% relative humidity) conditions and at 195 K under dry conditions. The unique adsorption behavior is also verified through van der Waals (vdW)-corrected density functional theory (DFT) calculations and nudged elastic band (NEB) simulations.

Tuning the electronic properties of highly anisotropic 2D dangling-bond-free sheets from 1D V2Se9 chain structures.

True one-dimensional (1D) van der Waals materials can form two-dimensional (2D) dangling-bond-free anisotropic surfaces. Dangling bonds on surfaces act as defects for transporting charge carriers. In this study, we consider true 1D materials to be V2Se9 chains, and then the electronic structures of 2D sheets composed of true 1D V2Se9 chains are calculated. The (010) plane has indirect bandgap with 0.757 eV (1.768 eV), while the (111̅) plane shows a nearly direct bandgap of 1.047 eV (2.118 eV) for DFT-D3 (HSE06) correction, respectively. The (111̅) plane of V2Se9 is expected to be used in optoelectronic devices because it contains a nearly direct bandgap. Partial charge analysis indicates that the (010) plane exhibits interchain interaction is stronger than the (111̅) plane. To investigate the strain effect, we increased the interchain distance of planes until an indirect-to-direct bandgap transition occurred. The (010) plane then demonstrated a direct bandgap when interchain distance increased by 30%, while the (111̅) plane demonstrated a direct bandgap when the interchain distance increased by 10%. In mechanical sensors, this change in the bandgap was induced by the interchain distance.

Effect of Underdamped Vibration on Excitation Energy Transfer: Direct Comparison between Two Different Partitioning Schemes.

We study excitation energy transfer (EET) in a model three-site system with a mixed-quantum classical dynamics method, by focusing on the effect of an underdamped vibration. We construct two types of models where the underdamped vibration mode is included either in the quantum subsystem or in the classical bath. We show that the two models yield practically equivalent results despite the different depictions of the vibration. In particular, both models consistently demonstrate accelerations of population relaxation induced by quasi-resonant vibration. This indicates that intricate features of EET dynamics that have been frequently ascribed to the quantal nature of vibrations, such as vibronic mixing, can be successfully reproduced by using physically equivalent but classically described bath modes. The mechanism behind the observed quantum-classical correspondence is proposed. We also systematically examine how the structure of the spectating continuum phonon modes affects the vibronic resonance and observe that phonon modes with different time scales influence the resonance in different manners.

Improving long time behavior of Poisson bracket mapping equation: a mapping variable scaling approach.

Semiclassical approaches are widely employed for understanding nonadiabatic processes in complex systems. However, many semiclassical approaches may suffer from various unphysical behaviors especially in the long time limit. For example, the Poisson bracket mapping equation (PBME), an example of semiclassical approaches that can be usefully adopted in simulating large systems, sometimes displays negative populations in long simulations. Here, to reduce the error in such population dynamics, we present a mapping variable scaling approach for PBME. We demonstrate that our approach yields the equilibrium population reliably in the long time limit by simulating energy transfers in a series of model systems. Based on error analyses of the system density matrices, we determine conditions for reliable dynamics in model two-state systems. We then apply our scheme to following the energy transfer dynamics in a more realistic seven state model with parameters that reflect experimental situations. With this, we confirm that the modified PBME provides correct equilibrium populations in the long time limit, with acceptable deterioration in the short time dynamics. We also test how the initial bath energy distribution changes in time depending on the schemes of sampling the initial bath modes, and try to see its effect on the system dynamics. Finally, we discuss the applicability of our scaling scheme to all-atom style semiclassical simulations of complex systems.

Theoretical Study of Anisotropic Carrier Mobility for Two-Dimensional Nb2Se9 Material.

Finding new materials with satisfying all the desired criteria for nanodevices is an extremely difficult work. Here, we introduce a novel Nb2Se9 material as a promising candidate, capable of overcoming some physical limitations, such as a suitable band gap, high carrier mobility, and chemical stability. Unlike graphene, it has a noticeable band gap and no dangling bonds at surfaces that deteriorate transport properties, owing to its molecular chain structure. Using density functional theory (DFT) calculations with deformation potential (DP) theory, we find that the electron mobility of 2D Nb2Se9 across the axis direction reaches up to 2.56 × 103 cm2 V-1 s-1 and is approximately 2.5-6 times higher than the mobility of other 2D materials, such as MoS2, black phosphorous, and InSe, at room temperature. Moreover, the mobility of 2D Nb2Se9 is highly anisotropic (µ a /µ c ≈ 6.5). We demonstrate the potential of 2D Nb2Se9 for applications in nanoscale electronic devices and, possibly, mid-infrared photodetectors.

Edge Defect-Free Anisotropic Two-Dimensional Sheets with Nearly Direct Band Gaps from a True One-Dimensional Van der Waals Nb2Se9 Material.

Dangling-bond-free two-dimensional (2D) materials can be isolated from the bulk structures of one-dimensional (1D) van der Waals materials to produce edge-defect-free 2D materials. Conventional 2D materials have dangling bonds on their edges, which act as scattering centers that deteriorate the transport properties of carriers. Highly anisotropic 2D sheets, made of 1D van der Waals Nb2Se9 material, have three planar structures depending on the cutting direction of the bulk Nb2Se9 crystal. To investigate the applications of these 2D Nb2Se9 sheets, we calculated the band structures of the three planar sheets and observed that two sheets had nearly direct band gaps, which were only slightly greater (0.01 eV) than the indirect band gaps. These energy differences were smaller than the thermal energy at room temperature. The 2D Nb2Se9 plane with an indirect band gap had the shortest interchain distance for selenium ions among the three planes and exhibited significant interchain interactions on the conduction band. The interchain strain induced an indirect-to-direct band gap transition in the 2D Nb2Se9 sheets. These 2D sheets of Nb2Se9 with direct band gaps also had different band structures because of different interactions between chains, implying that they can have different charge mobilities. We expect these dangling-bond-free 2D Nb2Se9 sheets to be applied in optoelectronic devices because they allow for nearly direct band gaps. They can also be used in mechanical sensors because the band gaps can be controlled by varying the interchain strain.

Structural and electronic properties of Mo6S3I6 nanowires by newly proposed theoretical compositional ordering.

The structural, electronic, and magnetic properties of molybdenum-based nanowires have been actively investigated for their potential applications in nanodevices; however, further advancement is hindered by incomplete knowledge of the electronic and atomic structures of Mo6S3I6. To facilitate further development of Mo6S3I6 nanowire devices, we propose possible atomic structures and corresponding electronic properties of Mo6S3I6 nanowires based on density functional theory. We explored various combinations of atomic structures by changing the positions of sulfur and iodine atoms linked to the two Mo6 octahedra in the Mo6S3I6 unit cell. We found two stable local energy minima structures characterized by elongation of the wire length, and therefore propose 28 possible atomic configurations. We calculated band structures of the newly proposed atomic models and found three structures that behaved as conductors. According to our compositional ordering structural analysis, we concluded that (i) periodic distortion of the bond lengths influences the behavior of the electrons in the system, (ii) the role of sulfur atoms in the bridging plane is important for intramolecular charge transport due to delocalized charge differences, and (iii) the electronic band gap energy is proportional to the integrated Mo-S bonding orbital energy.

Indirect-To-Direct Band Gap Transition of One-Dimensional V2Se9: Theoretical Study with Dispersion Energy Correction.

Recently, we synthesized a one-dimensional (1D) structure of V2Se9. The 1D V2Se9 resembles another 1D material, Nb2Se9, which is expected to have a direct band gap. To determine the potential applications of this material, we calculated the band structures of 1D and bulk V2Se9 using density functional theory by varying the number of chains and comparing their band structures and electronic properties with those of Nb2Se9. The results showed that a small number of V2Se9 chains have a direct band gap, whereas bulk V2Se9 possesses an indirect band gap, like Nb2Se9. We expect that V2Se9 nanowires with diameters less than ∼20 Šwould have direct band gaps. This indirect-to-direct band gap transition could lead to potential optoelectronic applications for this 1D material because materials with direct band gaps can absorb photons without being disturbed by phonons.

Highly concentrated single-chain atomic crystal LiMo3Se3 solution using ion-exchange chromatography.

Ion-exchange chromatography can be used to effectively replace the lithium ion of LiMo3Se3 with a proton. The enlargement of the Stern layer distance caused by this ion exchange improves the dispersibility of (Mo3Se3-)∞ chains and also prevents the re-bundling and aggregation of nanowires in aqueous solutions, even at high concentrations (1 mg mL-1).