Investigation of C-terminal domain of SARS nucleocapsid protein-Duplex DNA interaction using transistors and binding-site models.

AlGaN/GaN high electron mobility transistors (HEMTs) were used to sense the binding between double stranded DNA (dsDNA) and the severe acute respiratory syndrome coronavirus (SARS-CoV) nucleocapsid protein (N protein). The sensing signals were the drain current change of the HEMTs induced by the protein-dsDNA binding. Binding-site models using surface coverage ratios were utilized to analyze the signals from the HEMT-based sensors to extract the dissociation constants and predict the number of binding sites. Two dissociation constants, K D1 = 0.0955 nM, K D2 = 51.23 nM, were obtained by fitting the experimental results into the two-binding-site model. The result shows that this technique is more competitive than isotope-labeling electrophoretic mobility shift assay (EMSA). We demonstrated that AlGaN/GaN HEMTs were highly potential in constructing a semiconductor-based-sensor binding assay to extract the dissociation constants of nucleotide-protein interaction.

A Filter-Free Third Overtone Quartz Oscillator Based on Micromachining Technology.

This work investigates an AT-cut quartz crystal oscillator (XO) operating at its enhanced third overtone thickness shear (TS) mode while suppressing the fundamental TS mode by micromachining technology. A unique quartz plate structure has been proposed to alleviate the strong resonant signal from the first mode. A finite-element method (FEM) was used to characterize the first mode suppression while improving the performance of third overtone in terms of Q -factor and motional resistance ( Rm ) of the proposed device. In measurement, the unloaded Q -factor of the fundamental TS mode is from several tens of thousands (the reference design) to only several hundred (the proposed design). Meanwhile, the unloaded Q -factor of the third overtone response for the proposed design could reach Q  âˆ¼ 95 000 with a decent Rm . The Q -factor ratio attains 170-180 between the third overtone and fundamental modes. With the feature of low Q -factor on the fundamental mode, the oscillator system could successfully oscillate at a higher frequency without the help of bandpass filtering. Finally, the closed-loop oscillation measurement is performed for the phase noise (PN) characterization. The PN performance could reach -154.5 dBc/Hz at a 1-kHz offset at the carrier frequency of  âˆ¼  60 MHz. This technique has proven its potential as a future solution of high-frequency quartz oscillator technology.

Experimental investigation of rotating nodal line of MEMS-based nonlinear multi-mode resonators.

Nonlinear phenomenon is presently attracting considerable attention in the field of microelectromechanical systems (MEMS). By adjusting a controllable tuning voltage, the nonlinearity of microdevices, especially on microactuators, can be precisely manipulated. To trap and separate small particles, generating a large and stable rotation force is critical in micromanipulations. Here, we report a simple and potential angular momentum cell comprising a piezoelectric MEMS-based nonlinear multi-mode resonator with integrated electrodes. A nonlinear rotating nodal line has been observed in specific frequency bands by applying a controllable low voltage of sub 5 V on a 4-port resonator made of lead zirconate titanate (PZT) thin films. The magnitude of the actuated voltage is Complementary-Metal-Oxide-Semiconductor (CMOS)-compatible and easy to integrate with the circuit. Furthermore, the real-time rotation motion of the MEMS-based nonlinear multi-mode resonator is also verified by a laser doppler vibrometer (LDV) at both chirp and single input frequencies, respectively. Therefore, this angular momentum cell shows great potential in the application of micromanipulation.

Controllable multichannel acousto-optic modulator and frequency synthesizer enabled by nonlinear MEMS resonator.

Nonlinear physics-based harmonic generators and modulators are critical signal processing technologies for optical and electrical communication. However, most optical modulators lack multi-channel functionality while frequency synthesizers have deficient control of output tones, and they additionally require vacuum, complicated setup, and high-power configurations. Here, we report a piezoelectrically actuated nonlinear Microelectromechanical System (MEMS) based Single-Input-Multiple-Output multi-domain signal processing unit that can simultaneously generate programmable parallel information channels (> 100) in both frequency and spatial domain. This significant number is achieved through the combined electromechanical and material nonlinearity of the Lead Zirconate Titanate thin film while still operating the device in an ambient environment at Complementary-Metal-Oxide-Semiconductor compatible voltages. By electrically detuning the operation point along the nonlinear regime of the resonator, the number of electrical and light-matter interaction signals generated based on higher-order non-Eigen modes can be controlled meticulously. This tunable multichannel generation enabled microdevice is a potential candidate for a wide variety of applications ranging from Radio Frequency communication to quantum photonics with an attractive MEMS-photonics monolithic integration ability.

High-Q Support Transducer MEMS Resonators Enabled Low-Phase-Noise Oscillators.

Structural and electrode material engineering methodology to attain quality factor enhancement in a support transducer enabled Wine-glass and Lamé mode resonator has been demonstrated in this work. To boost the quality factor, a series of short mechanical couplers is utilized to link the central resonant structure with the piezoelectric transducer arms. Two different top electrode materials are investigated, and the effect of metal loading on the performance of aluminum nitride (AlN)-on-Si-based resonator is investigated in detail. The new resonator design strategy improves the quality factor of the Wine-glass resonator from 9800 to 16 300 while still being able to maintain a spurious-free spectrum for a 200-MHz span, which is crucial for oscillator applications. An optimized oscillation system is realized using a commercially available low-noise amplifier. Careful positioning of the passive components is utilized to attain an ideal operating point for the resonator in the closed-loop condition. Using this scheme, Wine-glass and Lamé mode resonator-based high-performance oscillators with a low phase noise of -133.6 and -132.7dBc/Hz at 1-kHz offset and -153.7 and -150.4 dBc/Hz at 1-MHz offset, respectively, which satisfy that the Global System for Mobile (GSM) communication requirements are attained when normalized to a 13-MHz carrier frequency.

1.52-GHz micromechanical extensional wine-glass mode ring resonators.

Vibrating polysilicon micromechanical ring resonators, using a unique extensional wine-glass-mode shape to achieve lower impedance than previous UHF resonators, have been demonstrated at frequencies as high as 1.2 GHz with a Q of 3,700, and 1.52 GHz with a Q of 2,800. The 1.2-GHz resonator exhibits a measured motional resistance of 1 MOmega with a dc-bias voltage of 20 V, which is 2.2 times lower than the resistance measured on radial contourmode disk counterparts at the same frequency. The use of larger rings offers a path toward even lower impedance, provided the spurious modes that become more troublesome as ring size increases can be properly suppressed using methods described herein. With spurious modes suppressed, the high-Q and low-impedance advantages, together with the multiple frequency on-chip integration advantages afforded by capacitively transduced micromechanical resonators, make this device an attractive candidate for use in the front-end RF filtering and frequency generation functions needed by wireless communication devices.

Design and Optimization of SHF Composite FBAR Resonators.

We propose an apodization technique-based composite thin-film bulk acoustic wave resonator (c-FBAR) design to enable the displacement and strain energy confinement at the central section of the resonator while in operation at the resonance mode. Sinc-shaped AlN on Silicon on Insulator apodized c-FBARs is designed to attain close to 90% energy localization. In this paper, a single crystal silicon as the mechanical layer and an AlN piezoelectric material as the transducer layer of the resonator implemented by InvenSense Inc.'s AlN MEMS-CMOS platform renders an asymmetric feature to the traditional FBAR resonator. The nature of composite thin-film piezoelectric on substrate FBAR resonators in the super high-frequency (SHF) range is studied in detail. Furthermore, a complete deembedding procedure to extract the resonator parameters from the CMOS + MEMS measured data is also explained meticulously. A complete equivalent circuit modeling for c-FBAR operating in the SHF is provided. Measurement data statistics show that sinc c-FBAR features superior electromechanical coupling coefficient ( ) than that of pentagon c-FBAR. As a result, we successfully demonstrate a sinc c-FBAR resonator operating at 3.264 GHz with an electromechanical coupling coefficient of 2.12%, a loaded quality factor ( ) of 790 and an unloaded of 2507.

Differentially piezoresistive transduction of high-Q encapsulated SOI-MEMS resonators with sub-100 nm gaps.

A differentially piezoresistive (piezo-R) readout proposed for single-crystal-silicon (SCS) microelectromechanical systems (MEMS) resonators is implemented in a foundrybased resonator platform, demonstrating effective feedthrough cancellation using just simple piezoresistors from the resonator supports while maximizing their capacitively transduced driving areas. The SCS resonators are fabricated by a CMOS foundry using an SOI-MEMS technology together with a polysilicon refill process. A high electromechanical coupling coefficient is attained by the use of 50-nm transducer gap spacing. Moreover, a vacuum package of the fabricated resonators is carried out through wafer-level bonding process. In this work, the corner supporting beams of the resonator serve not only mechanical supports but also piezoresistors for detecting the motional signal, hence substantially simplifying the overall resonator design to realize the piezo-R sensing. In addition, the fabricated resonators are capable of either capacitive sensing or piezo-R detection under the same capacitive drive. To mitigate feedthrough signals from parasitics, a differential measurement configuration of the piezo-R transduction is implemented in this work, featuring more than 30-dB improvement on the feedthrough level as compared with the single-ended piezo-R counterpart and purely capacitive sensing readout. Furthermore, the high-Q design of the mechanical supports is also investigated, offering Q more than 10 000 with efficient piezo-R transduction for MEMS resonators.

Temperature coefficient of frequency modeling for CMOS-MEMS bulk mode composite resonators.

CMOS-MEMS resonators, which are promising building blocks for achieving monolithic integration of MEMS structure, can be used for timing and filtering applications, and control circuitry. SiO2 has been used to make MEMS resonators with quality factor Q > 10(4), but temperature instability remains a major challenge. In this paper, a design that uses an embedded metal block for temperature compensation is proposed and shows sub-ppm temperature stability (-0.21 ppm/K). A comprehensive analytical model is derived and applied to analyze and optimize the temperature coefficient of frequency (TCF) of the CMOS-MEMS composite material resonator. Comparison with finite element method simulation demonstrates good accuracy. The model can also be applied to predict and analyze the TCF of MEMS resonators with arbitrary mode shape, and its integration with simulation packages enables interactive and efficient design process.

Realization of an ultra-sensitive hydrogen peroxide sensor with conductance change of horseradish peroxidase-immobilized polyaniline and investigation of the sensing mechanism.

In this study, we fabricate an ultra-sensitive hydrogen peroxide sensor by using horseradish peroxidase (HRP)-immobilized conducting polymer, polyaniline (PANI). With the proposed detection mechanism, hydrogen peroxide first oxidizes HRP, which then oxidizes polyaniline, thus resulting in decreased conductivity of the polyaniline thin film. The reduced HRP can be further oxidized by hydrogen peroxide and the cycle of the oxidation/reduction would continue until all hydrogen peroxide are reacted, leading to the high sensitivity of the sensor due to the signal contributed from all hydrogen peroxide molecule. The detection limit of this sensor is only 0.7 nM. The detectable concentration of H2O2 is from 0.7 nM to 1 µM. Beyond 1 µM, the sensor gradually saturates and some H2O2 remains, indicating the inhibition of HRP activity at high concentration of H2O2. There is no response to hydrogen peroxide once the PANI is standalone without HRP immobilized, showing the enzymatic reaction is required in the process of hydrogen peroxide detection. The simple process for the sensor fabrication allows the sensor to be cost-effective and disposable. This electronic hydrogen peroxide sensor is promising in applications for low concentration hydrogen peroxide detections, such as the reactive oxygen species (ROS) in oxidative stress studies.

Analogy among microfluidics, micromechanics, and microelectronics.

We wish to illuminate the analogous link between microfluidic-based devices, and the already established pairing of micromechanics and microelectronics to create a triangular/three-way scientific relationship as a means of interlinking familial disciplines and accomplishing two primary goals: (1) to facilitate the modeling of multidisciplinary domains; and, (2) to enable us to co-simulate the entire system within a compact circuit simulator (e.g., Cadence or SPICE). A microfluidic channel-like structure embedded in a micro-electro-mechanical resonator via our proposed CMOS-MEMS technology is used to illustrate the connections among microfluidics, micromechanics, and microelectronics.

AlGaN/GaN high electron mobility transistors for protein-peptide binding affinity study.

Antibody-immobilized AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect a short peptide consisting of 20 amino acids. One-binding-site model and two-binding-site model were used for the analysis of the electrical signals, revealing the number of binding sites on an antibody and the dissociation constants between the antibody and the short peptide. In the binding-site models, the surface coverage ratio of the short peptide on the sensor surface is relevant to the electrical signals resulted from the peptide-antibody binding on the HEMTs. Two binding sites on an antibody were observed and two dissociation constants, 4.404×10(-11) M and 1.596×10(-9) M, were extracted from the binding-site model through the analysis of the surface coverage ratio of the short peptide on the sensor surface. We have also shown that the conventional method to extract the dissociation constant from the linear regression of curve-fitting with Langmuir isotherm equation may lead to an incorrect information if the receptor has more than one binding site for the ligand. The limit of detection (LOD) of the sensor observed in the experimental result (~10 pM of the short peptide) is very close to the LOD (around 2.7-3.4 pM) predicted from the value of the smallest dissociation constants. The sensitivity of the sensor is not only dependent on the transistors, but also highly relies on the affinity of the ligand-receptor pair. The results demonstrate that the AlGaN/GaN HEMTs cannot only be used for biosensors, but also for the biological affinity study.

Mechanically coupled CMOS-MEMS free-free beam resonator arrays with enhanced power handling capability.

Integrated CMOS-MEMS free-free beam resonator arrays operated in a standard two-port electrical configuration with low motional impedance and high power handling capability, centered at 10.5 MHz, have been demonstrated using the combination of pull-in gap reduction mechanism and mechanically coupled array design. The mechanical links (i.e., coupling elements) using short stubs connect each constituent resonator of an array to its adjacent ones at the high-velocity vibrating locations to accentuate the desired mode and reject all other spurious modes. A single second-mode free-free beam resonator with quality factor Q > 2200 and motional impedance R(m) < 150 kΩ has been used to achieve mechanically coupled resonator arrays in this work. In array design, a 9-resonator array has been experimentally characterized to have performance improvement of approximately 10× on motional impedance and power handling as compared with that of a single resonator. In addition, the two-port electrical configuration is much preferred over a one-port configuration because of its low-feedthrough and high design flexibility for future oscillator and filter implementation.