Non-chemical fluorination of hexagonal boron nitride by high-energy ion irradiation.

Two-dimensional materials such as hexagonal boron nitride (h-BN) and graphene have attracted wide attention in nanoelectronics and spintronics. Since their electronic characteristics are strongly affected by the local atomic structure, the heteroatom doping could allow us to tailor the electronic and physical properties of two-dimensional materials. In this study, a non-chemical method of heteroatom doping into h-BN under high-energy ion irradiation was demonstrated for the LiF/h-BN/Cu heterostructure. Spectroscopic analysis of chemical states on the relevant atoms revealed that 6% ± 2% fluorinated h-BN is obtained by the irradiation of 2.4 MeV Cu2+ ions with the fluence up to 1014 ions cm-2. It was shown that the high-energy ion irradiation leads to a single-sided fluorination of h-BN by the formation of the fluorinated sp 3-hybridized BN.

Current driven domain wall motion in rare-earth transition metal alloys with perpendicular magnetic anisotropy.

The domain wall movement behaviors under current combining with magnetic field in perpendicularly magnetized TbFeCo wire were studied by a polar magneto-optical Kerr effect microscope. The velocity for domain wall creeping along electrons flowing direction was found to be apparently higher than that of domain wall creeping against electrons flowing, which is the signature of the spin transfer torque effect. By employing the modified field-driven creep motion law, a spin transfer efficiency of 2.7 Oe cm2/10(6) A was determined for TbFeCo wire by treating the spin transfer torque as an effective field adding to the external field. The high spin transfer efficiency suggests that perpendicularly magnetized system with sharp domain walls in TbFeCo film shows high superiorities for applications in spin transfer torque based devices compared with in-plane magnetized systems.

Sound Insulation Properties of Hollow Polystyrene Spheres/Polyethylene Glycol/Epoxy Composites.

The generation of noise requires a noise source, transmission path, and passive acceptance target of noise, all of which are indispensable. Blocking the propagation path of noise is one of the available means when the existence of the noise source and passive receiving target cannot be addressed. This is an effective way to prevent noise pollution, often using sound insulation materials to block the path of noise transmission. In this work, composites with excellent sound insulation properties were designed and prepared. These composites, using epoxy resin (EP) as the matrix, polyethylene glycol (PEG), and hollow polystyrene spheres (HPS), were added to epoxy resin as a toughening agent and functional filler to prepare the ternary HPS/PEG/EP composites. The soundproofing results showed that when the thickness of the sample was 3 mm, the average sound transmission loss (STL) value of the neat EP and the HPS/PEG/EP composites with an HPS 32 vol% was up to 19.0 dB and 42.1 dB, and the STL values of the composites were increased by approximately 120% compared to the pure epoxy. When the sample was 10 mm thick, the average STL value of the HPS/PEG/EP composites with HPS 32 vol% contents was enhanced to 55.7 dB.

Half-Metallic Heusler Alloy/MoS2 Based Magnetic Tunnel Junction.

Integration of half-metallic materials and 2D spacers into vertical magnetoresistive spin valves may pave the way for effective low-power consumption storage and memory technologies. Driven by the recent successful growth of graphene/half-metallic Co2Fe(Ge1/2Ga1/2) (CFGG) heterostructure, here we report a theoretical investigation of magnetic tunnel junction (MTJ) based on the ferromagnetic CFGG Heusler alloy and the MoS2 spacer of different thicknesses. Using ab initio approach, we demonstrate that the inherent ferromagnetism of CFGG is preserved at the interface, while its half-metallicity is recovering within few atomic layers. Ballistic transport in CFGG/MoS2/CFGG MTJ is studied within the nonequilibrium Green's function formalism, and a large magnetoresistance value up to ∼105% is observed. These findings support the idea of effective spintronics devices based on half-metallic Heusler alloys and highly diversified transition metal dichalcogenide family.

Acetylene hydrochlorination over tin nitrogen based catalysts: effect of nitrogen carbon-dots as nitrogen precursor.

The catalysts comprising the main active compounds of Sn-Nx were synthesized using trichlorophenylstannane ((C6H5)Cl3Sn), nitrogen carbon-dots (NCDs), and activated carbon (AC) as starting materials, and the activity and stability of catalysts was evaluated in the acetylene hydrochlorination. According to the results on the physical and chemical properties of catalysts (TEM, XRD, BET, XPS and TG), it is concluded that NCDs@AC can increase (C6H5)Cl3Sn dispersity, retard the coke deposition of (C6H5)Cl3Sn/AC and lessen the loss of (C6H5)Cl3Sn, thereby further promoting the stability of (C6H5)Cl3Sn/AC. Based on the characterization results of C2H2-TPD and HCl adsorption experiments, we proposed that the existence of Sn-Nx can effectively strengthen the reactants adsorption of catalysts. By combing the FT-IR, C2H2-TPD and Rideal-Eley mechanism, the catalytic mechanism, in which C2H2 is firstly adsorbed on (C6H5)Cl3Sn to form (C6H5)Cl3Sn-C2H2 and then reacted with HCl to produce vinyl chloride, is proposed.

Tin-sulfur based catalysts for acetylene hydrochlorination.

In the present work, tin-sulfur based catalysts were prepared using Na2SO3 and (CH3SO3)2Sn and were tested in acetylene hydrochlorination. Based on the analysis of experiments results, the acetylene conversion of (CH3SO3)2Sn/S@AC is still over 90%after a 50 h reaction, at the reaction conditions of T = 200 oC, VHCl/VC2H2 = 1.1:1.0 and C2H2-GSHV = 15 h-1. According to the results of X-ray photoelectron spectroscopy (XPS), HCl adsorption experiments, and acetylene temperature programmed desorption (C2H2-TPD), it is reasonable to conclude that the interaction between Sn and S not only can retard the oxidation of Sn2+ in catalysts but also strengthen the reactant adsorption capacity of tin-based catalysts. Furthermore, results obtained from nitrogen adsorption/desorption and XPS proved that the CH3SO3- can effectively decrease the coke deposition of (CH3SO3)2Sn/AC and thus prolong the lifetime of (CH3SO3)2Sn/AC.

Graphene/Half-Metallic Heusler Alloy: A Novel Heterostructure toward High-Performance Graphene Spintronic Devices.

Graphene-based vertical spin valves (SVs) are expected to offer a large magnetoresistance effect without impairing the electrical conductivity, which can pave the way for the next generation of high-speed and low-power-consumption storage and memory technologies. However, the graphene-based vertical SV has failed to prove its competence due to the lack of a graphene/ferromagnet heterostructure, which can provide highly efficient spin transport. Herein, the synthesis and spin-dependent electronic properties of a novel heterostructure consisting of single-layer graphene (SLG) and a half-metallic Co2 Fe(Ge0.5 Ga0.5 ) (CFGG) Heusler alloy ferromagnet are reported. The growth of high-quality SLG with complete coverage by ultrahigh-vacuum chemical vapor deposition on a magnetron-sputtered single-crystalline CFGG thin film is demonstrated. The quasi-free-standing nature of SLG and robust magnetism of CFGG at the SLG/CFGG interface are revealed through depth-resolved X-ray magnetic circular dichroism spectroscopy. Density functional theory (DFT) calculation results indicate that the inherent electronic properties of SLG and CFGG such as the linear Dirac band and half-metallic band structure are preserved in the vicinity of the interface. These exciting findings suggest that the SLG/CFGG heterostructure possesses distinctive advantages over other reported graphene/ferromagnet heterostructures, for realizing effective transport of highly spin-polarized electrons in graphene-based vertical SV and other advanced spintronic devices.

Visible-light photocatalytic capability and the mechanism investigation of a novel PANI/Sn3O4 p-n heterostructure.

A novel polyaniline (PANI)/Sn3O4 heterojunction composed of PANI nanofibers and Sn3O4 nanosheets was fabricated by a facile physical milling technique. Modification of Sn3O4 with a PANI conductive polymer contributes to facilitating interfacial charge transfer efficiency, and thus, significantly enhances the visible-light Rhodamine B (RhB) photo-degradation. Results indicate that PANI/Sn3O4 heterostructures with 10 wt% PANI reached the maximum degradation efficiency (around 97%) for RhB within 5 h, which is 2.27 times higher than that of Sn3O4 alone. This improvement is due to the p-n heterostructure formation in PANI/Sn3O4. Moreover, the outcome of reactive species capturing experiments demonstrated that in PANI/Sn3O4, holes made the largest contribution to RhB degradation under visible light illumination, while hydroxyl radicals showed less significance under the same conditions. In addition, the photocatalytic mechanism was proposed based on evidence from the reactive species test and energy band structure analysis.

(Imidazole-κN){N-[1-(2-oxidophenyl)ethylidene]-l-valinato-κO,N,O'}copper(II).

In each of the two independent mol-ecules in the asymmetric unit of the title compound, [Cu(C(13)H(15)NO(3))(C(3)H(4)N(2))], the Cu(II) atom is four-coordinated by two O atoms and the N atom of the tridentate Schiff base ligand and one N atom from the imidazole ligand in a distorted square-planar geometry. In the crystal structure, mol-ecules are linked by inter-molecular N-H⋯O hydrogen bonds.