Enhancement of the supercapacitive properties of laser deposited graphene-based electrodes through carbon nanotube loading and nitrogen doping.

Several technological routes are being investigated for improving the energy storage capability and power delivery of electrochemical capacitors. In this work, ternary hybrid electrodes composed of conducting graphene/reduced graphene oxide (rGO), which store charge mainly through electric double-layer mechanisms, covered by NiO nanostructures, for adding pseudocapacitance, were fabricated through a matrix assisted pulsed laser evaporation technique. The incorporation of multiwall carbon nanotubes (MWCNTs) provokes an increase of the porosity and thus, a substantial enhancement of the electrodes' capacitance (from 4 to 20 F cm-3 at 10 mV s-1). Volumetric capacitances of 34 F cm-3 were also obtained with electrodes containing just carbon nanotubes coated with NiO nanostructures. Moreover, the use of nitrogen containing precursors (ammonia, urea) for laser-induced N-doping of the nanocarbons also provokes a notable increase of the capacitance. Remarkably, N-containing groups in rGO-MWCNTs mainly add electric double layer charge storage, pointing to an increase of electrode porosity, whereas redox reactions contribute with a minor diffusion fraction. It was also observed that the loading of carbon nanotubes leads to an increase of diffusion-controlled charge storage mechanisms versus capacitive ones in rGO-based electrodes, the opposite effect being observed in graphene electrodes.

Mineralization-Inspired Synthesis of Magnetic Zeolitic Imidazole Framework Composites.

Metal-organic frameworks (MOFs) capable of mobility and manipulation are attractive materials for potential applications in targeted drug delivery, catalysis, and small-scale machines. One way of rendering MOFs navigable is incorporating magnetically responsive nanostructures, which usually involve at least two preparation steps: the growth of the magnetic nanomaterial and its incorporation during the synthesis of the MOF crystals. Now, by using optimal combinations of salts and ligands, zeolitic imidazolate framework composite structures with ferrimagnetic behavior can be readily obtained via a one-step synthetic procedure, that is, without the incorporation of extrinsic magnetic components. The ferrimagnetism of the composite originates from binary oxides of iron and transition metals such as cobalt. This approach exhibits similarities to the natural mineralization of iron oxide species, as is observed in ores and in biomineralization.

Boost of Charge Storage Performance of Graphene Nanowall Electrodes by Laser-Induced Crystallization of Metal Oxide Nanostructures.

Major research efforts are being carried out for the technological advancement to an energetically sustainable society. However, for the full commercial integration of electrochemical energy storage devices, not only materials with higher performance should be designed and manufactured but also more competitive production techniques need to be developed. The laser processing technology is well extended at the industrial sector for the versatile and high throughput modification of a wide range of materials. In this work, a method based on laser processing is presented for the fabrication of hybrid electrodes composed of graphene nanowalls (GNWs) coated with different transition-metal oxide nanostructures for electrochemical capacitor (EC) applications. GNW/stainless steel electrodes grown by plasma enhanced chemical vapor deposition were decorated with metal oxide nanostructures by means of their laser surface processing while immersed in aqueous organometallic solutions. The pseudocapacitive nature of the laser-induced crystallized oxide materials prompted an increase of the GNW electrodes' capacitance by 3 orders of magnitude, up to ca. 28 F/cm3 at 10 mV/s, at both the positive and negative voltages. Finally, asymmetric aqueous and solid-state ECs revealed excellent stability upon tens of thousands of charge-discharge cycles.

SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared.

Films of SiGe nanocrystals (NCs) in oxide have the advantage of tuning the energy band gap by adjusting SiGe NCs composition and size. In this study, SiGe-SiO2 amorphous films were deposited by magnetron sputtering on Si substrate followed by rapid thermal annealing at 700, 800 and 1000 °C. We investigated films with Si:Ge:SiO2 compositions of 25:25:50 vol.% and 5:45:50 vol.%. TEM investigations reveal the major changes in films morphology (SiGe NCs with different sizes and densities) produced by Si:Ge ratio and annealing temperature. XPS also show that the film depth profile of SiGe content is dependent on the annealing temperature. These changes strongly influence electrical and photoconduction properties. Depending on annealing temperature and Si:Ge ratio, photocurrents can be 103 times higher than dark currents. The photocurrent cutoff wavelength obtained on samples with 25:25 vol% SiGe ratio decreases with annealing temperature increase from 1260 nm in SWIR for 700 °C annealed films to 1210 nm for those at 1000 °C. By increasing Ge content in SiGe (5:45 vol%) the cutoff wavelength significantly shifts to 1345 nm (800 °C annealing). By performing measurements at 100 K, the cutoff wavelength extends in SWIR to 1630 nm having high photoresponsivity of 9.35 AW-1.

Ge nanoparticles in SiO2 for near infrared photodetectors with high performance.

In this work we prepared films of amorphous germanium nanoparticles embedded in SiO2 deposited by magnetron sputtering on Si and quartz heated substrates at 300, 400 and 500 °C. Structure, morphology, optical, electrical and photoconduction properties of all films were investigated. The Ge concentration in the depth of the films is strongly dependent on the deposition temperature. In the films deposited at 300 °C, the Ge content is constant in the depth, while films deposited at 500 °C show a significant decrease of Ge content from interface of the film with substrate towards the film free surface. From the absorption curves we obtained the Ge band gap of 1.39 eV for 300 °C deposited films and 1.44 eV for the films deposited at 500 °C. The photocurrents are higher with more than one order of magnitude than the dark ones. The photocurrent spectra present different cutoff wavelengths depending on the deposition temperature, i.e. 1325 nm for 300 °C and 1267 nm for 500 °C. These films present good responsivities of 2.42 AW-1 (52 µW incident power) at 300 °C and 0.69 AW-1 (57 mW) at 500 °C and high internal quantum efficiency of ∼445% for 300 °C and ∼118% for 500 °C.