Integrated femtosecond pulse generator on thin-film lithium niobate.

Integrated femtosecond pulse and frequency comb sources are critical components for a wide range of applications, including optical atomic clocks1, microwave photonics2, spectroscopy3, optical wave synthesis4, frequency conversion5, communications6, lidar7, optical computing8 and astronomy9. The leading approaches for on-chip pulse generation rely on mode-locking inside microresonators with either third-order nonlinearity10 or with semiconductor gain11,12. These approaches, however, are limited in noise performance, wavelength and repetition rate tunability 10,13. Alternatively, subpicosecond pulses can be synthesized without mode-locking, by modulating a continuous-wave single-frequency laser using electro-optic modulators1,14-17. Here we demonstrate a chip-scale femtosecond pulse source implemented on an integrated lithium niobate photonic platform18, using cascaded low-loss electro-optic amplitude and phase modulators and chirped Bragg grating, forming a time-lens system19. The device is driven by a continuous-wave distributed feedback laser chip and controlled by a single continuous-wave microwave source without the need for any stabilization or locking. We measure femtosecond pulse trains (520-femtosecond duration) with a 30-gigahertz repetition rate, flat-top optical spectra with a 10-decibel optical bandwidth of 12.6 nanometres, individual comb-line powers above 0.1 milliwatts, and pulse energies of 0.54 picojoules. Our results represent a tunable, robust and low-cost integrated pulsed light source with continuous-wave-to-pulse conversion efficiencies an order of magnitude higher than those achieved with previous integrated sources. Our pulse generator may find applications in fields such as ultrafast optical measurement19,20 or networks of distributed quantum computers21,22.

On-chip electro-optic frequency shifters and beam splitters.

Efficient frequency shifting and beam splitting are important for a wide range of applications, including atomic physics1,2, microwave photonics3-6, optical communication7,8 and photonic quantum computing9-14. However, realizing gigahertz-scale frequency shifts with high efficiency, low loss and tunability-in particular using a miniature and scalable device-is challenging because it requires efficient and controllable nonlinear processes. Existing approaches based on acousto-optics6,15-17, all-optical wave mixing10,13,18-22 and electro-optics23-27 are either limited to low efficiencies or frequencies, or are bulky. Furthermore, most approaches are not bi-directional, which renders them unsuitable for frequency beam splitters. Here we demonstrate electro-optic frequency shifters that are controlled using only continuous and single-tone microwaves. This is accomplished by engineering the density of states of, and coupling between, optical modes in ultralow-loss waveguides and resonators in lithium niobate nanophotonics28. Our devices, consisting of two coupled ring-resonators, provide frequency shifts as high as 28 gigahertz with an on-chip conversion efficiency of approximately 90 per cent. Importantly, the devices can be reconfigured as tunable frequency-domain beam splitters. We also demonstrate a non-blocking and efficient swap of information between two frequency channels with one of the devices. Finally, we propose and demonstrate a scheme for cascaded frequency shifting that allows shifts of 119.2 gigahertz using a 29.8 gigahertz continuous and single-tone microwave signal. Our devices could become building blocks for future high-speed and large-scale classical information processors7,29 as well as emerging frequency-domain photonic quantum computers9,11,14.

Broadband electro-optic frequency comb generation in a lithium niobate microring resonator.

Optical frequency combs consist of equally spaced discrete optical frequency components and are essential tools for optical communication, precision metrology, timing and spectroscopy1-9. At present, combs with wide spectra are usually generated by mode-locked lasers10 or dispersion-engineered resonators with third-order Kerr nonlinearity11. An alternative method of comb production uses electro-optic (EO) phase modulation in a resonator with strong second-order nonlinearity, resulting in combs with excellent stability and controllability12-14. Previous EO combs, however, have been limited to narrow widths by a weak EO interaction strength and a lack of dispersion engineering in free-space systems. Here we overcome these limitations by realizing an integrated EO comb generator in a thin-film lithium niobate photonic platform that features a large EO response, ultralow optical loss and highly co-localized microwave and optical fields15, while enabling dispersion engineering. Our measured EO comb spans more frequencies than the entire telecommunications L-band (over 900 comb lines spaced about 10 gigahertz apart), and we show that future dispersion engineering can enable octave-spanning combs. Furthermore, we demonstrate the high tolerance of our comb generator to modulation frequency detuning, with frequency spacing finely controllable over seven orders of magnitude (10 hertz to 100 megahertz), and we use this feature to generate dual-frequency combs in a single resonator. Our results show that integrated EO comb generators are capable of generating wide and stable comb spectra. Their excellent reconfigurability is a powerful complement to integrated Kerr combs, enabling applications ranging from spectroscopy16 to optical communications8.

High Q-Factor Diamond Optomechanical Resonators with Silicon Vacancy Centers at Millikelvin Temperatures.

Phonons are envisioned as coherent intermediaries between different types of quantum systems. Engineered nanoscale devices, such as optomechanical crystals (OMCs), provide a platform to utilize phonons as quantum information carriers. Here we demonstrate OMCs in diamond designed for strong for interactions between phonons and a silicon vacancy (SiV) spin. Using optical measurements at millikelvin temperatures, we measure a line width of 13 kHz (Q-factor of ∼4.4 × 105) for a 6 GHz acoustic mode, a record for diamond in the GHz frequency range and within an order of magnitude of state-of-the-art line widths for OMCs in silicon. We investigate SiV optical and spin properties in these devices and outline a path toward a coherent spin-phonon interface.

Plasmonic Diamond Membranes for Ultrafast Silicon Vacancy Emission.

Silicon vacancy centers (SiVs) in diamond have emerged as a promising platform for quantum sciences due to their excellent photostability, minimal spectral diffusion, and substantial zero-phonon line emission. However, enhancing their slow nanosecond excited-state lifetime by coupling to optical cavities remains an outstanding challenge, as current demonstrations are limited to ∼10-fold. Here, we couple negatively charged SiVs to sub-diffraction-limited plasmonic cavities and achieve an instrument-limited ≤8 ps lifetime, corresponding to a 135-fold spontaneous emission rate enhancement and a 19-fold photoluminescence enhancement. Nanoparticles are printed on ultrathin diamond membranes on gold films which create arrays of plasmonic nanogap cavities with ultrasmall volumes. SiVs implanted at 5 and 10 nm depths are examined to elucidate surface effects on their lifetime and brightness. The interplay between cavity, implantation depth, and ultrathin diamond membranes provides insights into generating ultrafast, bright SiV emission for next-generation diamond devices.

Relaxation of the electro-optic response in thin-film lithium niobate modulators.

Thin-film lithium niobate (TFLN) is a promising electro-optic (EO) photonics platform with high modulation bandwidth, low drive voltage, and low optical loss. However, EO modulation in TFLN is known to relax on long timescales. Instead, thermo-optic heaters are often used for stable biasing, but heaters incur challenges with cross-talk, high power, and low bandwidth. Here, we characterize the low-frequency (1 mHz to 1 MHz) EO response of TFLN modulators, investigate the root cause of EO relaxation and demonstrate methods to improve bias stability. We show that relaxation-related effects can enhance EO modulation across a frequency band spanning 1kHz to 20kHz in our devices - a counter-intuitive result that can confound measurement of half-wave voltage (V π) in TFLN modulators. We also show that EO relaxation can be slowed by more than 104-fold through control of the LN-metal interface and annealing, offering progress toward lifetime-stable EO biasing. Such robust EO biasing would enable applications for TFLN devices where cross-talk, power, and bias bandwidth are critical, such as quantum devices, high-density integrated photonics, and communications.

Single-drive electro-optic frequency comb source on a photonic-wire-bonded thin-film lithium niobate platform.

Stable pulse and flat-top frequency comb generation are an indispensable component of many photonic applications, from ranging to communications. Lithium niobate on insulator is an excellent electro-optic (EO) platform, exhibiting high modulation efficiency and low optical loss, making it a fitting candidate for pulse generation through electro-optic modulation of continuous-wave (CW) light, a commonly utilized method for generating ultrashort pulses. Here, we demonstrate an on-chip electro-optic comb generation module on thin-film lithium niobate (TFLN) consisting of a Mach-Zehnder interferometer (MZI) amplitude modulator (AM) and a cascaded phase modulator (PM) system driven by a single-electrode drive. We show that when operated in the correct regime, the lithium niobate chips can generate frequency combs with excellent spectral power flatness. In addition, we optically package one of the pulse generator chips via photonic wire bonding. The pulses generated by the photonic-wire-bonded device are compressed to 840 fs pulse duration using an optical fiber and show extremely stable operation.

Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages.

Electro-optic modulators translate high-speed electronic signals into the optical domain and are critical components in modern telecommunication networks1,2 and microwave-photonic systems3,4. They are also expected to be building blocks for emerging applications such as quantum photonics5,6 and non-reciprocal optics7,8. All of these applications require chip-scale electro-optic modulators that operate at voltages compatible with complementary metal-oxide-semiconductor (CMOS) technology, have ultra-high electro-optic bandwidths and feature very low optical losses. Integrated modulator platforms based on materials such as silicon, indium phosphide or polymers have not yet been able to meet these requirements simultaneously because of the intrinsic limitations of the materials used. On the other hand, lithium niobate electro-optic modulators, the workhorse of the optoelectronic industry for decades9, have been challenging to integrate on-chip because of difficulties in microstructuring lithium niobate. The current generation of lithium niobate modulators are bulky, expensive, limited in bandwidth and require high drive voltages, and thus are unable to reach the full potential of the material. Here we overcome these limitations and demonstrate monolithically integrated lithium niobate electro-optic modulators that feature a CMOS-compatible drive voltage, support data rates up to 210 gigabits per second and show an on-chip optical loss of less than 0.5 decibels. We achieve this by engineering the microwave and photonic circuits to achieve high electro-optical efficiencies, ultra-low optical losses and group-velocity matching simultaneously. Our scalable modulator devices could provide cost-effective, low-power and ultra-high-speed solutions for next-generation optical communication networks and microwave photonic systems. Furthermore, our approach could lead to large-scale ultra-low-loss photonic circuits that are reconfigurable on a picosecond timescale, enabling a wide range of quantum and classical applications5,10,11 including feed-forward photonic quantum computation.

Development of hard masks for reactive ion beam angled etching of diamond.

Diamond offers good optical properties and hosts bright color centers with long spin coherence times. Recent advances in angled-etching of diamond, specifically with reactive ion beam angled etching (RIBAE), have led to successful demonstration of quantum photonic devices operating at visible wavelengths. However, larger devices operating at telecommunication wavelengths have been difficult to fabricate due to the increased mask erosion, arising from the increased size of devices requiring longer etch times. We evaluated different mask materials for RIBAE of diamond photonic crystal nanobeams and waveguides, and how their thickness, selectivity, aspect ratio and sidewall smoothness affected the resultant etch profiles and optical performance. We found that a thick hydrogen silesquioxane (HSQ) layer on a thin alumina adhesion layer provided the best etch profile and optical performance. The techniques explored in this work can also be adapted to other bulk materials that are not available heteroepitaxially or as thin films-on-insulator.

Optical bi-stability in cubic silicon carbide microring resonators.

We measure the photothermal nonlinear response in suspended cubic silicon carbide (3C-SiC) and 3C-SiC-on-insulator (SiCOI) microring resonators. Bi-stability and thermo-optic hysteresis is observed in both types of resonators, with the suspended resonators showing a stronger response. A photothermal nonlinear index of 4.02×10-15 m2/W is determined for the suspended resonators, while the SiCOI resonators demonstrate one order of magnitude lower photothermal nonlinear index of 4.32×10-16 m2/W. Cavity absorption and temperature analysis suggest that the differences in thermal bi-stability are due to variations in waveguide absorption, likely from crystal defect density differences throughout the epitaxially grown layers. Furthermore, coupled mode theory model shows that the strength of the optical bi-stability, in suspended and SiCOI resonators can be engineered for high power or nonlinear applications.

Spectrally separable photon-pair generation in dispersion engineered thin-film lithium niobate.

Existing nonlinear-optic implementations of pure, unfiltered heralded single-photon sources do not offer the scalability required for densely integrated quantum networks. Additionally, lithium niobate has hitherto been unsuitable for such use due to its material dispersion. We engineer the dispersion and the quasi-phasematching conditions of a waveguide in the rapidly emerging thin-film lithium niobate platform to generate spectrally separable photon pairs in the telecommunications band. Such photon pairs can be used as spectrally pure heralded single-photon sources in quantum networks. We estimate a heralded-state spectral purity of >94% based on joint spectral intensity measurements. Further, a joint spectral phase-sensitive measurement of the unheralded time-integrated second-order correlation function yields a heralded-state purity of (86±5)%.

Optically Heralded Entanglement of Superconducting Systems in Quantum Networks.

Networking superconducting quantum computers is a longstanding challenge in quantum science. The typical approach has been to cascade transducers: converting to optical frequencies at the transmitter and to microwave frequencies at the receiver. However, the small microwave-optical coupling and added noise have proven formidable obstacles. Instead, we propose optical networking via heralding end-to-end entanglement with one detected photon and teleportation. This new protocol can be implemented on standard transduction hardware while providing significant performance improvements over transduction. In contrast to cascaded direct transduction, our scheme absorbs the low optical-microwave coupling efficiency into the heralding step, thus breaking the rate-fidelity trade-off. Moreover, this technique unifies and simplifies entanglement generation between superconducting devices and other physical modalities in quantum networks.

Wafer-scale low-loss lithium niobate photonic integrated circuits.

Thin-film lithium niobate (LN) photonic integrated circuits (PICs) could enable ultrahigh performance in electro-optic and nonlinear optical devices. To date, realizations have been limited to chip-scale proof-of-concepts. Here we demonstrate monolithic LN PICs fabricated on 4- and 6-inch wafers with deep ultraviolet lithography and show smooth and uniform etching, achieving 0.27 dB/cm optical propagation loss on wafer-scale. Our results show that LN PICs are fundamentally scalable and can be highly cost-effective.

Integrated microwave acousto-optic frequency shifter on thin-film lithium niobate.

Electrically driven acousto-optic devices that provide beam deflection and optical frequency shifting have broad applications from pulse synthesis to heterodyne detection. Commercially available acousto-optic modulators are based on bulk materials and consume Watts of radio frequency power. Here, we demonstrate an integrated 3-GHz acousto-optic frequency shifter on thin-film lithium niobate, featuring a carrier suppression over 30 dB. Further, we demonstrate a gigahertz-spaced optical frequency comb featuring more than 200 lines over a 0.6-THz optical bandwidth by recirculating the light in an active frequency shifting loop. Our integrated acousto-optic platform leads to the development of on-chip optical routing, isolation, and microwave signal processing.

High-Q suspended optical resonators in 3C silicon carbide obtained by thermal annealing.

We fabricate suspended single-mode optical waveguides and ring resonators in 3C silicon carbide (SiC) that operate at telecommunication wavelength, and leverage post-fabrication thermal annealing to minimize optical propagation losses. Annealed optical resonators yield quality factors of over 41,000, which corresponds to a propagation loss of 7 dB/cm, and is a significant improvement over the 24 dB/cm in the case of the non-annealed chip. This improvement is attributed to the enhancement of SiC crystallinity and a significant reduction of waveguide surface roughness, from 2.4 nm to below 1.7 nm. The latter is attributed to surface layer oxide growth during the annealing step. We confirm that the thermo-optic coefficient, an important parameter governing high-power and temperature-dependent performance of SiC, does not vary with annealing and is comparable to that of bulk SiC. Our annealing-based approach, which is especially suitable for suspended structures, offers a straightforward way to realize high-performance 3C-SiC integrated circuits.

Electrically Tunable Valley Dynamics in Twisted WSe_{2}/WSe_{2} Bilayers.

The twist degree of freedom provides a powerful new tool for engineering the electrical and optical properties of van der Waals heterostructures. Here, we show that the twist angle can be used to control the spin-valley properties of transition metal dichalcogenide bilayers by changing the momentum alignment of the valleys in the two layers. Specifically, we observe that the interlayer excitons in twisted WSe_{2}/WSe_{2} bilayers exhibit a high (>60%) degree of circular polarization (DOCP) and long valley lifetimes (>40 ns) at zero electric and magnetic fields. The valley lifetime can be tuned by more than 3 orders of magnitude via electrostatic doping, enabling switching of the DOCP from ∼80% in the n-doped regime to <5% in the p-doped regime. These results open up new avenues for tunable chiral light-matter interactions, enabling novel device schemes that exploit the valley degree of freedom.

Coherent two-octave-spanning supercontinuum generation in lithium-niobate waveguides.

We demonstrate coherent supercontinuum generation (SCG) in a monolithically integrated lithium-niobate waveguide, under the presence of second- and third-order nonlinear effects. We achieve more than two octaves of optical bandwidth in a 0.5-cm-long waveguide with 100-picojoule-level pulses. Dispersion engineering of the waveguide allows for spectral overlap between the SCG and the second harmonic, which enables direct detection of the carrier-envelope offset frequency fCEO using a single waveguide. We measure the fCEO of our femtosecond pump source with a 30-dB signal-to-noise ratio.

Supercontinuum generation in angle-etched diamond waveguides.

We experimentally demonstrate on-chip supercontinuum generation in the visible region in angle-etched diamond waveguides. We measure an output spectrum spanning 670-920 nm in a 5-mm-long waveguide using 100-fs pulses with 187 pJ of incident pulse energy. Our fabrication technique, combined with diamond's broad transparency window, offers a potential route toward broadband supercontinuum generation in the UV domain.

Strongly Cavity-Enhanced Spontaneous Emission from Silicon-Vacancy Centers in Diamond.

Quantum emitters are an integral component for a broad range of quantum technologies, including quantum communication, quantum repeaters, and linear optical quantum computation. Solid-state color centers are promising candidates for scalable quantum optics due to their long coherence time and small inhomogeneous broadening. However, once excited, color centers often decay through phonon-assisted processes, limiting the efficiency of single-photon generation and photon-mediated entanglement generation. Herein, we demonstrate strong enhancement of spontaneous emission rate of a single silicon-vacancy center in diamond embedded within a monolithic optical cavity, reaching a regime in which the excited-state lifetime is dominated by spontaneous emission into the cavity mode. We observe 10-fold lifetime reduction and 42-fold enhancement in emission intensity when the cavity is tuned into resonance with the optical transition of a single silicon-vacancy center, corresponding to 90% of the excited-state energy decay occurring through spontaneous emission into the cavity mode. We also demonstrate the largest coupling strength (g/2π = 4.9 ± 0.3 GHz) and cooperativity (C = 1.4) to date for color-center-based cavity quantum electrodynamics systems, bringing the system closer to the strong coupling regime.

Nanophotonic lithium niobate electro-optic modulators.

Since the emergence of optical fiber communications, lithium niobate (LN) has been the material of choice for electro-optic modulators, featuring high data bandwidth and excellent signal fidelity. Conventional LN modulators however are bulky, expensive and power hungry, and cannot meet the growing demand in modern optical data links. Chip-scale, highly integrated, LN modulators could offer solutions to this problem, yet the fabrication of low-loss devices in LN thin films has been challenging. Here we overcome this hurdle and demonstrate monolithically integrated LN electro-optic modulators that are significantly smaller and more efficient than traditional bulk LN devices, while preserving LN's excellent material properties. Our compact LN electro-optic platform consists of low-loss nanoscale LN waveguides, micro-ring resonators and miniaturized Mach-Zehnder interferometers, fabricated by directly shaping LN thin films into sub-wavelength structures. The efficient confinement of both optical and microwave fields at the nanoscale dramatically improves the device performances featuring a half-wave electro-optic modulation efficiency of 1.8 V∙cm while operating at data rates up to 40 Gbps. Our monolithic LN nanophotonic platform enables dense integration of high-performance active components, opening new avenues for future high-speed, low power and cost-effective communication networks.