A Gauss's law analysis of redox active adsorbates on semiconductor electrodes: The charging and faradaic currents are not independent.

A detailed framework for modeling and interpreting the data in totality from a cyclic voltammetric measurement of adsorbed redox monolayers on semiconductor electrodes has been developed. A three-layer model consisting of the semiconductor space-charge layer, a surface layer, and an electrolyte layer is presented that articulates the interplay between electrostatic, thermodynamic, and kinetic factors in the electrochemistry of a redox adsorbate on a semiconductor. Expressions are derived that describe the charging and faradaic current densities individually, and an algorithm is demonstrated that allows for the calculation of the total current density in a cyclic voltammetry measurement as a function of changes in the physical properties of the system (e.g., surface recombination, dielectric property of the surface layer, and electrolyte concentration). The most profound point from this analysis is that the faradaic and charging current densities can be coupled. That is, the common assumption that these contributions to the total current are always independent is not accurate. Their interrelation can influence the interpretation of the charge-transfer kinetics under certain experimental conditions. More generally, this work not only fills a long-standing knowledge gap in electrochemistry but also aids practitioners advancing energy conversion/storage strategies based on redox adsorbates on semiconductor electrodes.

Revisiting the Reactivity of the Dismissed Hydrogen Atom Transfer Catalyst Succinimide-N-oxyl.

Phthalimide-N-oxyl (PINO) and related radicals are promising catalysts for C-H functionalization reactions. To date, only a small number of N-oxyl derivatives have demonstrated improved activities over PINO. We postulate that the lack of success in identifying superior catalysts is associated not only with challenges in the design and synthesis of new structures, but also the way catalysts are evaluated and utilized. Catalyst evaluation typically relies on the use of chemical oxidants to generate N-oxyl radicals from their parent N-hydroxy compounds. Herein we provide an example where a potential-controlled electrochemical analysis reveals that succinimide-N-oxyl (SINO) compares favorably to PINO as a hydrogen atom transfer (HAT) catalyst-in contrast to previous claims based on other approaches. Our efforts to understand the basis for the greater reactivity of SINO relative to PINO have underscored that the HAT kinetics are significantly influenced by factors beyond changes in thermodynamics. This is perhaps best illustrated by the similar reactivity of tetrachloro-PINO and SINO despite the latter engaging in substantially more exergonic reactions. The key role of HAT transition state (TS) polarization prompted the design and initial characterization of a chlorinated SINO derivative, which we found to be the most reactive N-oxyl HAT catalyst reported to date.

Understanding and Expanding the Prospects for Electrosynthesis with Liquid Metal Electrodes.

ConspectusThis Account describes and summarizes the latest work from our laboratory on developing and maturing strategies based on low-temperature liquid metals as reaction environments for materials synthesis. The electrochemical liquid-liquid-solid (ec-LLS) crystal growth concept is a hybrid method that combines electrodeposition and melt crystal growth. Using liquid metals as both electrodes and solvents for the purpose of producing inorganic crystals and materials, a simple and environmentally friendly process is possible. The impetus is to address the key deficiency in the inorganic crystalline materials that are the basis of modern optoelectronics and renewable energy capture/conversion systems. Specifically, existing methods for synthesizing crystalline inorganic materials for these purposes are largely energy- and resource-intensive, with a substantial impact on the environment when scaled. A long-term goal of our work with ec-LLS is to realize a materials synthetic process that is matured without requiring intensive resources or negatively impacting the environment. To this end, the factors that both limit and govern ec-LLS processes must be identified and understood. To date, questions regarding the factors that affect crystal nucleation and growth, form factors, and overall composition remain.Previous work established concretely ec-LLS as a versatile method for synthesizing and producing crystalline semiconductors at low temperatures as either particles, nanowires, or microwires. Subsequent experiments have focused on two tiers. First, the microscopic details of the liquid metal and its interfaces that dictate materials synthesis and crystal growth must be identified. Second, strategies that widen the attainable material form factors to facilitate device architectures must be realized. Hence, this Account describes results aimed at answering three questions: (1) What are the consequences of reaching supersaturation by an electrochemical rather than a thermal driving force for crystal growth in ec-LLS? (2) Can the location of nucleation and subsequent crystal growth be controlled? (3) Does the atomic structure of the liquid metal affect product formation in ec-LLS? The science described herein illustrates the value of in situ methods spanning transmission electron microscopy, X-ray diffraction, and X-ray reflectance for revealing the role that liquid metal composition and structure can play in ec-LLS. Additionally, we summarize work that shows for the first time that it is possible to produce both single-crystalline epitaxial films and complex intermetallic compounds through ec-LLS by tuning the cell design, electrochemical excitation waveform, and composition of the liquid metal electrodes.The cumulative findings described here substantially enrich our understanding of the ec-LLS concept while simultaneously motivating further questions moving forward. Is it possible to attain complete control over the crystalline quality and composition of ec-LLS products? Can the materials produced by ec-LLS provide tailored functional properties for targeted applications? Can the ec-LLS strategy be further refined to allow material synthesis and deposition at precise locations with deterministically chosen form factors? What synthetic pathways are accessible when even more sophisticated electrochemical waveforms and cell designs are used? Our hope is that this Account will spur additional researchers to help answer such questions.

Attenuating N-Oxyl Decomposition for Improved Hydrogen Atom Transfer Catalysts.

The design of N-oxyl hydrogen atom transfer catalysts has proven challenging to date. Previous efforts have focused on the functionalization of the archetype, phthalimide-N-oxyl. Driven in part by the limited options for modification of this structure, this strategy has provided only modest improvements in reactivity and/or solubility. Our previous mechanistic efforts suggested that while the electron-withdrawing carbonyls of the phthalimide are necessary to maximize the O-H bond dissociation enthalpy of the HAT product hydroxylamine and overall reaction thermodynamics, they undergo nucleophilic substitution leading to catalyst decomposition. In an attempt to minimize this vulnerability, we report the characterization of N-oxyl catalysts wherein the aryl ring in PINO is replaced with the combination of a substituted heteroatom and quaternary carbon. By rendering one carbonyl carbon less electrophilic and the other less sterically accessible, the corresponding N1-aryl-hydantoin-N3-oxyl radical showed significantly higher stability than PINO as well as a modest improvement in reactivity. This proof-of-principle in new scaffold design may accelerate future HAT catalyst discovery and development.

Electrosynthesis of Quasi-Epitaxial Crystals on Liquid Metals.

Electrosynthesis of single-crystalline metallic and intermetallic particles with a preferred orientation onto liquid metal electrodes has been performed. Liquid gallium electrodes immersed in aqueous alkaline electrolytes without any molecular additive or external solid seeding substrates were used to electroreduce separately Pb2+, Bi3+, Pd2+, and Mn2+. The crystallinity, composition, and orientation of the electrodeposition products were characterized by using scanning electron microscopy, transmission electron microscopy, selected area electron diffraction, grazing incidence X-ray diffraction, and energy-dispersive X-ray spectroscopy. Electrodeposition of Pb and Bi results in the incipient formation of two-dimensional (2D) nuclei that subsequently direct the growth of Pb and Bi single crystals along the most close-packed [111] and [0001] directions, respectively. The absence of any intervening surface oxides and a low electroreduction flux are necessary to avoid polycrystalline dendrite formation. Under comparable conditions, the electrodeposition of Pd and Mn results in single-crystalline intermetallic particles at the interface. Each crystal exhibits a preferred orientation consistent with the unique atomic packing of the near-surface region of the liquid Ga. The presented study suggests a new concept in electrodeposition processes where the liquid metal structure imparts quasi-epitaxial growth in a system in which the electrode material specifically has no crystallinity or long-range order. This study is thus the first demonstration of highly oriented electrodeposition at a liquid/liquid interface under ambient conditions, highlighting the unique solvation environment of liquid metal interfaces for forming thin metallic and intermetallic films.

Voltammetric Measurement of Rates and Energetics for Surface Methoxylation of Si(100) in Methanol with Dissolved Electron Acceptors Using Si Ultramicroelectrodes.

The steady-state voltammetric responses of n-type Si(100) semiconductor ultramicroelectrodes (SUMEs) immersed in air- and water-free methanolic electrolytes have been measured. The response characteristics of these SUMEs in the absence of illumination were modeled and understood through a framework that describes the distribution of the applied potential across the semiconductor/electrolyte contact using four discrete regions: the semiconductor space charge, surface, Helmholtz, and diffuse layers. The latter region was described by the full Gouy-Chapman model. This framework afforded insight on how relevant parameters such as the semiconductor band edge potentials, the reorganization energies for charge transfer, the standard potential of redox species in solution, the density and energy of surface state populations, and the presence of an insulating (tunneling) layer individually and collectively dictate the observable current-potential responses. With this information, the methoxylation of Si surfaces was evaluated by analysis of the change in voltammetric responses during the course of prolonged immersion in methanol. The electrochemical data were consistent with a surface methoxylation mechanism that depended on the standard potential of redox species dissolved in solution. Estimates of the enthalpies of adsorption as well as the potential-dependent rate constant for surface methoxylation were obtained. Collectively, these measurements supported the contention that the rates of Si surface reactions can be systematically tuned by exposure to dissolved outer-sphere electron acceptors. Moreover, the data represent the quantitative utility of voltammetry with SUMEs for the measurement of semiconductor/liquid contacts.

A Description of the Faradaic Current in Cyclic Voltammetry of Adsorbed Redox Species on Semiconductor Electrodes.

A framework for interpreting the cyclic voltammetric responses from adsorbed redox monolayers on semiconductor electrodes has been developed. Expressions that describe quantitatively how the rates of the forward and back charge-transfer reactions impact the faradaic current density are presented. The primary insight is an explicit connection between the potential drops across the semiconductor space charge, surface, and electrolyte diffuse layers and the potential dependence of the reaction kinetics. Specifically, the evolution of the voltammetric shapes with experimental variables such as scan rate, standard potential of the redox adsorbate, and semiconductor surface energetics can now be interpreted for information on the operative charge-transfer rate constant and reaction energetics. This model is used to understand the complex dependence of the cathodic and anodic wave shapes for the first redox transition of an asymmetric viologen species adsorbed on n-Si(111). This system exhibited a heterogeneous rate constant of 0.24 s-1 and exhibited features consistent with an overwhelming majority of the applied potential dropping within the semiconductor space charge region. In total, experimentalists now have a visual key on how to interpret the faradaic current in voltammetric data for information on heterogeneous charge-transfer reactions between semiconductor electrodes and molecular adsorbates. The presented approach fills a long-standing knowledge gap in electrochemistry and aids practitioners interested in advancing photoelectrochemical energy conversion/storage strategies.

Mechanism of Electrochemical Generation and Decomposition of Phthalimide-N-oxyl.

Phthalimide N-oxyl (PINO) is a potent hydrogen atom transfer (HAT) catalyst that can be generated electrochemically from N-hydroxyphthalimide (NHPI). However, catalyst decomposition has limited its application. This paper details mechanistic studies of the generation and decomposition of PINO under electrochemical conditions. Voltammetric data, observations from bulk electrolysis, and computational studies suggest two primary aspects. First, base-promoted formation of PINO from NHPI occurs via multiple-site concerted proton-electron transfer (MS-CPET). Second, PINO decomposition occurs by at least two second-order paths, one of which is greatly enhanced by base. Optimal catalytic efficiency in PINO-catalyzed oxidations occurs in the presence of bases whose corresponding conjugate acids have pKa's in the range of ∼11-15, which strikes a balance between promoting PINO formation and minimizing its decay.

Beyond the Laviron Method: A New Mathematical Treatment for Analyzing the Faradaic Current in Reversible, Quasi-Reversible, and Irreversible Cyclic Voltammetry of Adsorbed Redox Species.

A new algorithm that describes the faradaic current for elementary redox reactions in the cyclic voltammetric responses of persistently adsorbed species on metal electrodes at any scan rate is presented. This work does not assume electrochemical reversibility and instead demonstrates a set of equations that encapsulate how the forward and back charge-transfer rate constants influence the data as a function of the experimental time scale. The method presented here is compared against other approaches that rely on either finite-difference calculations or that require numerical approximation of improper integrals (i.e., ±infinity as a bound). The method here demonstrates that the current-potential data can be described by incomplete gamma functions, whose two arguments capture the relevant kinetic variables. Following the notation for the Butler-Volmer model of charge transfer, exact solutions are presented for the cases of the charge-transfer coefficient, α, equal to 1 or 0. A related algorithm based on these results affords calculation of current-potential data for 0 < α < 1, allowing comprehensive analysis (i.e., point by point) of voltammetric data throughout the reversible, quasi-reversible, and irreversible regimes. Accordingly, this work represents an alternative to the method of Laviron, i.e., analyzing just the peak splitting values, for experimentalists to understand and interpret their voltammetric data in totality.

Electro-reductive Fragmentation of Oxidized Lignin Models.

Lignin provides a potential sustainable source for production of electron-rich aromatic compounds. Recently, electrochemical lignin degradation via an oxidation/reduction sequence under mild conditions has garnered much attention within the lignin community, as electrochemistry simplifies redox reactions and offers an electron source/sink for synthesis without using stoichiometric oxidants or reductants. This paper describes a fundamental approach for the electrochemical fragmentation of the primary connection in native lignin, ß-O-4. Potential-controlled electrolysis enables selective reduction and provides fragmentation products and/or coupling products in isolated yields of 59-92%.

Semiconductor Ultramicroelectrodes: Platforms for Studying Charge-Transfer Processes at Semiconductor/Liquid Interfaces.

Semiconductor ultramicroelectrodes (SUMEs) were prepared by photolithographic patterning of defined pinholes in dielectric coatings on semiconductor wafers. Methods are reported for interpreting their electrochemical response characteristics in the absence of illumination. Radial diffusion is reconciled with the diode equation to describe the full voltammetric response, allowing direct determination of heterogeneous charge-transfer rate constants and surface quality. The voltammetric responses of n-type Si SUMEs were assessed and showed prototypical UME characteristics with obtainable current densities higher than those of conventional macroscopic electrodes. The SUME voltammetry proved highly sensitive to both native and intentionally grown oxides, highlighting their ability to precisely track dynamic surface conditions reliably through electrochemical measurement. Subsequently, electron transfer from the conduction band of n-Si SUMEs to aqueous Ru(NH3)63+ was determined to occur near optimal exoergicity. In total, this work validates the SUME platform as a new tool to study fundamental charge-transfer properties at semiconductor/liquid junctions.

Electrochemical Liquid Phase Epitaxy (ec-LPE): A New Methodology for the Synthesis of Crystalline Group IV Semiconductor Epifilms.

Deposition of epitaxial germanium (Ge) thin films on silicon (Si) wafers has been achieved over large areas with aqueous feedstock solutions using electrochemical liquid phase epitaxy (ec-LPE) at low temperatures (T ≤ 90 °C). The ec-LPE method uniquely blends the simplicity and control of traditional electrodeposition with the material quality of melt growth. A new electrochemical cell design based on the compression of a liquid metal electrode into a thin cavity that enables ec-LPE is described. The epitaxial nature, low strain character, and crystallographic defect content of the resultant solid Ge films were analyzed by electron backscatter diffraction, scanning transmission electron microscopy, high resolution X-ray diffraction, and electron channeling contrast imaging. The results here show the first step toward a manufacturing infrastructure for traditional crystalline inorganic semiconductor epifilms that does not require high temperature, gaseous precursors, or complex apparatus.

Concerted Electrodeposition and Alloying of Antimony on Indium Electrodes for Selective Formation of Crystalline Indium Antimonide.

The direct preparation of crystalline indium antimonide (InSb) by the electrodeposition of antimony (Sb) onto indium (In) working electrodes has been demonstrated. When Sb is electrodeposited from dilute aqueous electrolytes containing dissolved Sb2O3, an alloying reaction is possible between Sb and In if any surface oxide films are first thoroughly removed from the electrode. The presented Raman spectra detail the interplay between the formation of crystalline InSb and the accumulation of Sb as either amorphous or crystalline aggregates on the electrode surface as a function of time, temperature, potential, and electrolyte composition. Electron and optical microscopies confirm that under a range of conditions, the preparation of a uniform and phase-pure InSb film is possible. The cumulative results highlight this methodology as a simple yet potent strategy for the synthesis of intermetallic compounds of interest.

Electrochemical liquid-liquid-solid (ec-LLS) crystal growth: a low-temperature strategy for covalent semiconductor crystal growth.

This Account describes a new electrochemical synthetic strategy for direct growth of crystalline covalent group IV and III-V semiconductor materials at or near ambient temperature conditions. This strategy, which we call "electrochemical liquid-liquid-solid" (ec-LLS) crystal growth, marries the semiconductor solvation properties of liquid metal melts with the utility and simplicity of conventional electrodeposition. A low-temperature liquid metal (i.e., Hg, Ga, or alloy thereof) acts simultaneously as the source of electrons for the heterogeneous reduction of oxidized semiconductor precursors dissolved in an electrolyte as well as the solvent for dissolution of the zero-valent semiconductor. Supersaturation of the semiconductor in the liquid metal triggers eventual crystal nucleation and growth. In this way, the liquid electrolyte-liquid metal-solid crystal phase boundary strongly influences crystal growth. As a synthetic strategy, ec-LLS has several intrinsic features that are attractive for preparing covalent semiconductor crystals. First, ec-LLS does not require high temperatures, toxic precursors, or high-energy-density semiconductor reagents. This largely simplifies equipment complexity and expense. In practice, ec-LLS can be performed with only a beaker filled with electrolyte and an electrical circuit capable of supplying a defined current (e.g., a battery in series with a resistor). By this same token, ec-LLS is compatible with thermally and chemically sensitive substrates (e.g., plastics) that cannot be used as deposition substrates in conventional syntheses of covalent semiconductors. Second, ec-LLS affords control over a host of crystal shapes and sizes through simple changes in common experimental parameters. As described in detail herein, large and small semiconductor crystals can be grown both homogeneously within a liquid metal electrode and heterogeneously at the interface of a liquid metal electrode and a seed substrate, depending on the particular details chosen for ec-LLS. Third, the rate of introduction of zero-valent materials into the liquid metal is precisely gated with a high degree of resolution by the applied potential/current. The intent of this Account is to summarize the key elements of ec-LLS identified to date, first contextualizing this method with respect to other semiconductor crystal growth methods and then highlighting some unique capabilities of ec-LLS. Specifically, we detail ec-LLS as a platform to prepare Ge and Si crystals from bulk- (∼1 cm(3)), micro- (∼10(-10) cm(3)), and nano-sized (∼10(-16) cm(3)) liquid metal electrodes in common solvents at low temperature. In addition, we describe our successes in the preparation of more compositionally complex binary covalent III-V semiconductors.

Extreme light absorption by multiple plasmonic layers on upgraded metallurgical grade silicon solar cells.

We fabricate high-efficiency, ultrathin (∼12 µm), flexible, upgraded metallurgical-grade polycrystalline silicon solar cells with multiple plasmonic layers precisely positioned on top of the cell to dramatically increase light absorption. This scalable approach increases the optical absorptivity of our solar cells over a broad range of wavelengths, and they achieve efficiencies η ≈ 11%. Detailed studies on the electrical and optical properties of the developed solar cells elucidate the light absorption contribution of each individual plasmonic layer. Finite-difference time-domain simulations were also performed to yield further insights into the obtained results. We anticipate that the findings from this work will provide useful design considerations for fabricating a range of different solar cell systems.

Room-temperature epitaxial electrodeposition of single-crystalline germanium nanowires at the wafer scale from an aqueous solution.

Direct epitaxial growth of single-crystalline germanium (Ge) nanowires at room temperature has been performed through an electrodeposition process on conductive wafers immersed in an aqueous bath. The crystal growth is based on an electrochemical liquid-liquid-solid (ec-LLS) process involving the electroreduction of dissolved GeO2(aq) in water at isolated liquid gallium (Ga) nanodroplet electrodes resting on single-crystalline Ge or Si supports. Ge nanowires were electrodeposited on the wafer scale (>10 cm(2)) using only common glassware and a digital potentiostat. High-resolution electron micrographs and electron diffraction patterns collected from cross sections of individual substrate-nanowire contacts in addition to scanning electron micrographs of the orientation of nanowires across entire films on substrates with different crystalline orientations, supported the notion of epitaxial nanowire growth. Energy dispersive spectroscopic elemental mapping of single nanowires indicated the Ga(l) nanodroplet remains affixed to the tip of the growing nanowire throughout the nanowire electrodeposition process. Current-voltage responses measured across many individual nanowires yielded reproducible resistance values. The presented data cumulatively show epitaxial growth of covalent group IV nanowires is possible from the reduction of a dissolved oxide under purely benchtop conditions.

Analysis of the electrodeposition and surface chemistry of CdTe, CdSe, and CdS thin films through substrate-overlayer surface-enhanced Raman spectroscopy.

The substrate-overlayer approach has been used to acquire surface enhanced Raman spectra (SERS) during and after electrochemical atomic layer deposition (ECALD) of CdSe, CdTe, and CdS thin films. The collected data suggest that SERS measurements performed with off-resonance (i.e. far from the surface plasmonic wavelength of the underlying SERS substrate) laser excitation do not introduce perturbations to the ECALD processes. Spectra acquired in this way afford rapid insight on the quality of the semiconductor film during the course of an ECALD process. For example, SERS data are used to highlight ECALD conditions that yield crystalline CdSe and CdS films. In contrast, SERS measurements with short wavelength laser excitation show evidence of photoelectrochemical effects that were not germane to the intended ECALD process. Using the semiconductor films prepared by ECALD, the substrate-overlayer SERS approach also affords analysis of semiconductor surface adsorbates. Specifically, Raman spectra of benzenethiol adsorbed onto CdSe, CdTe, and CdS films are detailed. Spectral shifts in the vibronic features of adsorbate bonding suggest subtle differences in substrate-adsorbate interactions, highlighting the sensitivity of this methodology.

Secondary functionalization of allyl-terminated GaP(111)A surfaces via heck cross-coupling metathesis, hydrosilylation, and electrophilic addition of bromine.

The functionalization of single crystalline gallium phosphide (GaP) (111)A surfaces with allyl groups has been performed using a sequential chlorine-activation/Grignard reaction process. Increased hydrophobicity following reaction of a GaP(111)A surface with C3H5MgCl was observed through water contact angle measurements. Infrared spectra of GaP(111)A samples after reaction with C3H5MgCl showed the asymmetric C═C and C═C-H modes diagnostic of surface-attached allyl groups. The stability of allyl-terminated GaP(111)A surfaces under ambient and aqueous conditions was investigated. XP spectra of allyl-terminated GaP(111)A highlighted a significant resistance against interfacial oxidation both in air and in water relative to the native interface. Electrochemical impedance spectroscopy indicated a change in the flat-band potential of allyl-terminated GaP(111)A electrodes immersed in water relative to native GaP(111)A surfaces. Further, the flat-band potentials for allyl-terminated electrodes were insensitive to changes in solution pH. The utility of surface-bound allyl groups for covalent secondary functionalization of GaP(111)A interfaces was assessed through three separate reactions: Heck cross-coupling metathesis, hydrosilylation, and electrophilic addition of bromine reactions. Addition of aryl groups across the olefins on allyl-terminated GaP(111)A via Heck cross coupling was performed and confirmed through high-resolution F 1s and C 1s XP spectra and IR spectra. Control experiments with GaP(111)A surfaces functionalized with short alkanes indicated no evidence for metathesis. Hydrosilylation reactions were separately performed. Si 2s XP spectra, in conjunction with infrared spectra, similarly showed secondary evidence of surface functionalization for allyl-terminated GaP(111)A but not for CH3-terminated GaP(111)A surfaces. Similar analyses showed electrophilic addition of Br2 across the terminal olefin on an allyl-terminated GaP(111)A surface after exposure to dilute Br2 solutions in CH2Cl2. The work presented herein establishes a set of secondary reaction strategies utilizing allyl-terminated surfaces to modify chemically protected GaP surfaces.