Your browser doesn't support javascript.
loading
Mostrar: 20 | 50 | 100
Resultados 1 - 3 de 3
Filtrar
Mais filtros

Base de dados
Tipo de documento
País de afiliação
Intervalo de ano de publicação
1.
Sensors (Basel) ; 18(8)2018 Aug 12.
Artigo em Inglês | MEDLINE | ID: mdl-30103550

RESUMO

Galfenol (Fe1-xGax, 10 < x < 40) may be the only smart material that can be made by electrochemical deposition which enables thick film and nanowire structures. This article reviews the deposition, characterization, and applications of Galfenol thin films and nanowires. Galfenol films have been made by sputter deposition as well as by electrochemical deposition, which can be difficult due to the insolubility of gallium. However, a stable process has been developed, using citrate complexing, a rotating disk electrode, Cu seed layers, and pulsed deposition. Galfenol thin films and nanowires have been characterized for crystal structures and magnetostriction both by our group and by collaborators. Films and nanowires have been shown to be largely polycrystalline, with magnetostrictions that are on the same order of magnitude as textured bulk Galfenol. Electrodeposited Galfenol films were made with epitaxial texture on GaAs. Galfenol nanowires have been made by electrodeposition into anodic aluminum oxide templates using similar parameters defined for films. Segmented nanowires of Galfenol/Cu have been made to provide engineered magnetic properties. Applications of Galfenol and other magnetic nanowires include microfluidic sensors, magnetic separation, cellular radio-frequency identification (RFID) tags, magnetic resonance imaging (MRI) contrast, and hyperthermia.

2.
Nano Lett ; 12(8): 4102-9, 2012 Aug 08.
Artigo em Inglês | MEDLINE | ID: mdl-22783942

RESUMO

Resistivities of 5.4 µΩ·cm were measured in 10-nm-diameter metallic wires. Low resistance is important for interconnections of the future to prevent heating, electromigration, high power consumption, and long RC time constants. To demonstrate application of these wires, Co/Cu/Co magnetic sensors were synthesized with 20-30 Ω and 19% magnetoresistance. Compared to conventional lithographically produced magnetic tunnel junction sensors, these structures offer facile fabrication and over 2 orders of magnitude lower resistances due to smooth sidewalls from in situ templated chemical growth.

3.
J Appl Phys ; 118(2): 024302, 2015 Jul 14.
Artigo em Inglês | MEDLINE | ID: mdl-26221057

RESUMO

Using off-axis electron holography under Lorentz microscopy conditions to experimentally determine the magnetization distribution in individual cobalt (Co) nanowires, and scanning precession-electron diffraction to obtain their crystalline orientation phase map, allowed us to directly visualize with high accuracy the effect of crystallographic texture on the magnetization of nanowires. The influence of grain boundaries and disorientations on the magnetic structure is correlated on the basis of micromagnetic analysis in order to establish the detailed relationship between magnetic and crystalline structure. This approach demonstrates the applicability of the method employed and provides further understanding on the effect of crystalline structure on magnetic properties at the nanometric scale.

SELEÇÃO DE REFERÊNCIAS
DETALHE DA PESQUISA