Integrated optical frequency division for microwave and mmWave generation.

The generation of ultra-low-noise microwave and mmWave in miniaturized, chip-based platforms can transform communication, radar and sensing systems1-3. Optical frequency division that leverages optical references and optical frequency combs has emerged as a powerful technique to generate microwaves with superior spectral purity than any other approaches4-7. Here we demonstrate a miniaturized optical frequency division system that can potentially transfer the approach to a complementary metal-oxide-semiconductor-compatible integrated photonic platform. Phase stability is provided by a large mode volume, planar-waveguide-based optical reference coil cavity8,9 and is divided down from optical to mmWave frequency by using soliton microcombs generated in a waveguide-coupled microresonator10-12. Besides achieving record-low phase noise for integrated photonic mmWave oscillators, these devices can be heterogeneously integrated with semiconductor lasers, amplifiers and photodiodes, holding the potential of large-volume, low-cost manufacturing for fundamental and mass-market applications13.

32-channel wide-bandwidth massive RF photonic combiner based on distributed groups of arrayed photodetectors.

We propose and experimentally demonstrate a low-loss, radio frequency (RF) photonic signal combiner with flat response from 1 GHz to 15 GHz and low group delay variation of 9 ps. The distributed group array photodetector combiner (GAPC) is implemented in a scalable Si photonics platform and has applications in RF photonic systems that rely on combining massive numbers of photonic signals.

All-optical linearized Mach-Zehnder modulator.

A practical, broadband, all-optical linearization concept for a Mach-Zehnder modulator (MZM) is proposed and demonstrated. The unique transmitter design includes an amplitude modulated (AM) standard MZM with two optical outputs, where the alternative (or complimentary) output is combined with the laser carrier to create a linearizing optical local oscillator, which when coherently combined with the AM signal fully cancels 3rd order intermodulation distortion components. Using this scheme, record linearity is achieved for a non-amplified RF photonic link, with spurious free dynamic range (SFDR) of 118.5 dB.Hz2/3 and 123 dB.Hz2/3 for single and dual fiber/photodetector schemes.

Rhodium Indenyl NHC and Fluorenyl-Tethered NHC Half-Sandwich Complexes: Synthesis, Structures and Applications in the Catalytic C-H Borylation of Arenes and Alkanes.

Indenyl (Ind) rhodium N-heterocyclic carbene (NHC) complexes [Rh(η5 -Ind)(NHC)(L)] were synthesised for 1,3-bis(2,6-diisopropylphenyl)-4,5-dihydroimidazol-2-ylidene (SIPr) with L=C2 H4 (1), CO (2 a) and cyclooctene (COE; 3), for 1,3-bis(2,4,6-trimethylphenyl)-4,5-dihydroimidazol-2-ylidene (SIMes) with L=CO (2 b) and COE (4), and 1,3-bis(2,4,6-trimethylphenyl)imidazol-2-ylidene (IMes) with L=CO (2 c) and COE (5). Reaction of SIPr with [Rh(Cp*)(C2 H4 )2 ] did not give the desired SIPr complex, thus demonstrating the "indenyl effect" in the synthesis of 1. Oxidative addition of HSi(OEt)3 to 3 proceeded under mild conditions to give the Rh silyl hydride complex [Rh(Ind){Si(OEt)3 }(H)(SIPr)] (6) with loss of COE. Tethered-fluorenyl NHC rhodium complexes [Rh{(η5 -C13 H8 )C2 H4 N(C)C2 Hx NR}(L)] (x=4, R=Dipp, L=C2 H4 : 11; L=COE: 12; L=CO: 13; R=Mes, L=COE: 14; L=CO: 15; x=2, R=Me, L=COE: 16; L=CO: 17) were synthesised in low yields (5-31 %) in comparison to good yields for the monodentate complexes (49-79 %). Compounds 3 and 1, which contain labile alkene ligands, were successful catalysts for the catalytic borylation of benzene with B2 pin2 (Bpin=pinacolboronate, 97 and 93 % PhBpin respectively with 5 mol % catalyst, 24 h, 80 °C), with SIPr giving a more active catalyst than SIMes or IMes. Fluorenyl-tethered NHC complexes were much less active as borylation catalysts, and the carbonyl complexes were inactive. The borylation of toluene, biphenyl, anisole and diphenyl ether proceeded to give meta substitutions as the major product, with smaller amounts of para substitution and almost no ortho product. The borylation of octane and decane with B2 pin2 at 120 and 140 °C, respectively, was monitored by 11 B NMR spectroscopy, which showed high conversions into octyl and decylBpin over 4-7 days, thus demonstrating catalysed sp3 C-H borylation with new piano stool rhodium indenyl complexes. Irradiation of the monodentate complexes with 400 or 420 nm light confirmed the ready dissociation of C2 H4 and COE ligands, whereas CO complexes were inert. Evidence for C-H bond activation in the alkyl groups of the NHC ligands was obtained.

Effects of nonlinear loss in high-Q Si ring resonators for narrow-linewidth III-V/Si heterogeneously integrated tunable lasers.

High-Q Si ring resonators play an important role in the development of widely tunable heterogeneously integrated lasers. However, while a high Q-factor (Q > 1 million) is important for ring resonators in a laser cavity, the parasitic high-power density in a Si resonator can deteriorate the laser performance at high power levels due to nonlinear loss. Here, we experimentally show that this detrimental effect can happen at moderate power levels (a few milliwatts) where typical heterogeneously integrated lasers work. We further compare different ring resonators, including extended Si ring resonators and Si3N4 ring resonators and provide practical approaches to minimize this effect. Our results provide explanations and guidelines for high-Q ring resonator designs in heterogeneously integrated tunable lasers, and they are also applicable for hybrid integrated butt-coupled lasers.

Ultra-narrow linewidth laser based on a semiconductor gain chip and extended Si3N4 Bragg grating.

We demonstrate ultra-narrow linewidth fixed wavelength hybrid lasers composing a semiconductor gain chip and extended silicon nitride Bragg grating. Fabricated ultra-low κ Bragg gratings provide a narrow bandwidth and high side-lobe suppression ratio. A single-wavelength 1544 nm hybrid extended-distributed Bragg reflector laser with 24 mW output power and a Lorentzian linewidth of 320 Hz is demonstrated, providing a high-performance light source for on- and off-chip applications.

Phase tuning by length contraction.

Typical integrated optical phase tuners alter the effective index. In this paper, we explore tuning by geometric deformation. We show that tuning efficiency, Vπ L, improves as the device size shrinks down to the optimal bend radius, contrary to conventional index-shift based approaches where Vπ L remains constant. We demonstrate that this approach is capable of ultra-low power tuning across a full FSR in a low-confinement silicon nitride based ring resonator of 580 µm radius. We demonstrate record performance with VFSR = 16 V, Vπ L = 3.6 V dB, Vπ Lα = 1.1 V dB, tuning current below 10 nA, and unattenuated tuning response up to 1 MHz. We also present optimized designs for high confinement silicon nitride and silicon based platforms with radius down to 80 µm and 45 µm, respectively, with performance well beyond current state-of-the-art. Applications include narrow-linewidth tunable diode lasers for spectroscopy and non-linear optics, optical phased array beamforming networks for RF antennas and LIDAR, and optical filters for WDM telecommunication links.

Highly linear heterogeneous-integrated Mach-Zehnder interferometer modulators on Si.

In this paper we demonstrate highly linear Mach-Zehnder interferometer modulators utilizing heterogeneous integration on a Si substrate (HS-MZM). A record high dynamic range was achieved for silicon devices, obtained using hybrid III-V/Si phase modulation sections and single drive push-pull operation, demonstrating a spurious free dynamic range (SFDR) of 112 dB∙Hz2/3 at 10 GHz, comparable to commercial Lithium Niobate MZMs.

Low kappa, narrow bandwidth Si(3)N(4) Bragg gratings.

We investigate three approaches to low perturbation gratings to achieve lower linewidths in filters and semiconductor lasers. The three designs, which are labeled post, sampled, and high order, are DUV lithography compatible and were fabricated on 90 nm thick Si(3)N(4) strip waveguides. Reflection and transmission spectra measurements show coupling constant, kappa, values ranging from 0.23 cm(­1) to 1.2 cm(­1) with FWHM values of 74 pm to 116 pm. We discuss the tradeoffs between these geometries in terms of lowest linewidth, apodization, and curved waveguide layout. These results enable long cavity single mode lasers with kHz level linewidths on a monolithic platform.

Linearized Bragg grating assisted electro-optic modulator.

We propose a new linearized electro-optic modulator in which linearization is achieved by modulating the index of a Bragg grating reflector placed in the arm(s) of a Michelson Interferometer. This grating-assisted Michelson (GAMI) modulator can operate as either an intensity or amplitude modulator, and is shown to significantly improve the linearity of microwave photonics links.

Catalyst Design for Rh-Catalyzed Arene and Alkane C-H Borylation: The NHC Affects the Induction Period, and Indenyl is Superior to Cp.

In order to establish design criteria for Rh C-H borylation catalysts, analogues of the successful catalyst [Rh(Ind)(SIDipp)(COE)] (Ind = η5-indenyl, SIDipp = 1,3-bis(2,6-diisopropylphenyl)-4,5-dihydroimidazol-2-ylidene, and COE = cis-cyclooctene) were synthesized by changing the indenyl and carbene ligands. [RhCp(SIDipp)(COE)] (1) formed alongside the C-C activated, cyclometalated byproduct [RhCp(κ2CAr,Ccarbene-SIDipp')(iPr)] (rac-2; SIDipp' = 1-(6-isopropylphenyl)-3-(2,6-diisopropylphenyl)-4,5-dihydroimidazol-2-ylidene). Computational modeling of COE dissociation showed that both C-C and C-H activation of the SIDipp aryl group is thermally attainable and reversible under experimental conditions, with the C-C activation products being the more thermodynamically stable species. Oxidative addition of 1 with SiH(OEt)3 gave the Rh silyl hydride [RhCp(H){Si(OEt)3}(SIDipp)] (rac-3). [Rh(Ind)(IDipp)(COE)] (4; IDipp = 1,3-bis(2,6-diisopropylphenyl)-imidazole-2-ylidene), the carbonyl analogue [Rh(Ind)(IDipp)(CO)] (5; νCO = 1940 cm-1, cf. 1944 cm-1 for [Rh(Ind)(SIDipp)(COE)]), and [Rh(Ind)(IMe4)(COE)] (6; IMe4 = 1,3,4,5-tetramethylimidazol-2-ylidene) were also characterized, but attempts to synthesize Rh carbene complexes with fluorenyl or 1,2,3,4-tetrahydrofluorenyl ligands were not successful. For the catalytic C-H borylation of benzene using B2pin2, 1 was inactive at 80 °C, and [Rh(Ind)(SIDipp)(COE)] was superior to all other complexes tested due to the shortest induction period. However, the addition of HBpin to precatalyst 4 eliminated the induction period. Catalytic n-alkane C-H borylation using [Rh(Ind)(NHC)(COE)] gave yields of up to 21% alkylBpin, but [RhCp*(C2H4)2] was the better catalyst.

Linearized silicon modulator based on a ring assisted Mach Zehnder inteferometer.

We demonstrate a Linearized Ring Assisted Mach-Zehnder Interferometer (L-RAMZI) modulator in a miniature silicon device. We measure a record high degree of linearization for a silicon device, with a Spurious Free Dynamic Range (SFDR) of 106dB/Hz²/³ at 1GHz, and 99dB/Hz²/³ at 10GHz.

High-performance lasers for fully integrated silicon nitride photonics.

Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN photonic integrated circuits (PICs), but are difficult to fully integrate with low-index SiN waveguides due to their large mismatch with the high-index III-V gain materials. The recent demonstration of multilayer heterogeneous integration provides a practical solution and enabled the first-generation of lasers fully integrated with SiN waveguides. However, a laser with high device yield and high output power at telecommunication wavelengths, where photonics applications are clustered, is still missing, hindered by large mode transition loss, non-optimized cavity design, and a complicated fabrication process. Here, we report high-performance lasers on SiN with tens of milliwatts output power through the SiN waveguide and sub-kHz fundamental linewidth, addressing all the aforementioned issues. We also show Hertz-level fundamental linewidth lasers are achievable with the developed integration techniques. These lasers, together with high-Q SiN resonators, mark a milestone towards a fully integrated low-noise silicon nitride photonics platform. This laser should find potential applications in LIDAR, microwave photonics and coherent optical communications.

Tunable wideband optical delay line based on balanced coupled resonator structures.

An optical tunable delay line based on a side-coupled integrated spaced sequence of resonator (SCISSOR) structure in which pairs of resonances are tuned in opposite directions around the signal frequency is proposed and analyzed. It is shown that this balanced SCISSOR design mitigates the deleterious effects of group delay dispersion and provides both wide bandwidth and continuously tunable long delays without distortion.