Heuristic Description of Magnetoelectricity of Cu2OSeO3.

CuO2SeO3 is an insulating material that hosts topologically nontrivial spin whirls, so-called skyrmions, and exhibits magnetoelectric coupling allowing to manipulate these skyrmions by means of electric fields. We report magnetic force microscopy imaging of the real-space spin structure on the surface of a bulk single crystal of CuO2SeO3. Based on measurements of the electric polarization using Kelvin-probe force microscopy, we develop a heuristic description of the magnetoelectric properties in CuO2SeO3. The model successfully describes the dependency of the electric polarization on the magnetization in all magnetically modulated phases.

Architecture of nanoscale ferroelectric domains in GaMo4S8.

Local-probe imaging of the ferroelectric domain structure and auxiliary bulk pyroelectric measurements were conducted at low temperatures with the aim to clarify the essential aspects of the orbitally driven phase transition in GaMo4S8, a lacunar spinel crystal that can be viewed as a spin-hole analogue of its GaV4S8 counterpart. We employed multiple scanning probe techniques combined with symmetry and mechanical compatibility analysis to uncover the hierarchical domain structures, developing on the 10-100 nm scale. The identified domain architecture involves a plethora of ferroelectric domain boundaries and junctions, including primary and secondary domain walls in both electrically neutral and charged configurations, and topological line defects transforming neutral secondary walls into two oppositely charged ones.

Characteristics of ferroelectric-ferroelastic domains in Néel-type skyrmion host GaV4S8.

GaV4S8 is a multiferroic semiconductor hosting Néel-type magnetic skyrmions dressed with electric polarization. At Ts = 42 K, the compound undergoes a structural phase transition of weakly first-order, from a non-centrosymmetric cubic phase at high temperatures to a polar rhombohedral structure at low temperatures. Below Ts, ferroelectric domains are formed with the electric polarization pointing along any of the four 〈111〉 axes. Although in this material the size and the shape of the ferroelectric-ferroelastic domains may act as important limiting factors in the formation of the Néel-type skyrmion lattice emerging below TC = 13 K, the characteristics of polar domains in GaV4S8 have not been studied yet. Here, we report on the inspection of the local-scale ferroelectric domain distribution in rhombohedral GaV4S8 using low-temperature piezoresponse force microscopy. We observed mechanically and electrically compatible lamellar domain patterns, where the lamellae are aligned parallel to the (100)-type planes with a typical spacing between 100 nm-1.2 µm. Since the magnetic pattern, imaged by atomic force microscopy using a magnetically coated tip, abruptly changes at the domain boundaries, we expect that the control of ferroelectric domain size in polar skyrmion hosts can be exploited for the spatial confinement and manipulation of Néel-type skyrmions.