Highly reliable SERS substrate based on plasmonic hybrid coupling between gold nanoislands and periodic nanopillar arrays.

To improve both sensitivity and reliability, a hybrid SERS substrate of combining gold nanoislands (GNI) with periodic MgF2 nanopillar arrays was successfully developed. SERS detection performance of the proposed substrates was evaluated in terms of enhancement effect, signal-to-noise ratio (SNR), linearity, reproducibility and repeatability, and compared with the performance of a conventional SERS substrate based on GNI. Experimental and simulation results presented that significant improvement of SERS intensity and SNR by more than 3 times and a notable reduction in relative standard deviation were obtained. We hope that the suggested SERS platform with unique advantages in sensitivity and reliability could be extended to point-of-care detection of a variety of biomolecular reactions.

Wafer-scale surface roughening for enhanced light extraction of high power AlGaInP-based light-emitting diodes.

A new approach to surface roughening was established and optimized in this paper for enhancing the light extraction of high power AlGaInP-based LEDs, by combining ultraviolet (UV) assisted imprinting with dry etching techniques. In this approach, hexagonal arrays of cone-shaped etch pits are fabricated on the surface of LEDs, forming gradient effective-refractive-index that can mitigate the emission loss due to total internal reflection and therefore increase the light extraction efficiency. For comparison, wafer-scale FLAT-LEDs without any surface roughening, WET-LEDs with surface roughened by wet etching, and DRY-LEDs with surface roughened by varying the dry etching time of the AlGaInP layer, were fabricated and characterized. The average output power for wafer-scale FLAT-LEDs, WET-LEDs, and DRY3-LEDs (optimal) at 350 mA was found to be 102, 140, and 172 mW, respectively, and there was no noticeable electrical degradation with the WET-LEDs and DRY-LEDs. The light output was increased by 37.3% with wet etching, and 68.6% with dry etching surface roughening, respectively, without compromising the electrical performance of LEDs. A total number of 1600 LED chips were tested for each type of LEDs. The yield of chips with an optical output power of 120 mW and above was 0.3% (4 chips), 42.8% (684 chips), and 90.1% (1441 chips) for FLAT-LEDs, WET-LEDs, and DRY3-LEDs, respectively. The dry etching surface roughening approach developed here is potentially useful for the industrial mass production of wafer-scale high power LEDs.

Transparent integrated pyroelectric-photovoltaic structure for photo-thermo hybrid power generation.

Thermal losses in photoelectric devices limit their energy conversion efficiency, and cyclic input of energy coupled with pyroelectricity can overcome this limit. Here, incorporating a pyroelectric absorber into a photovoltaic heterostructure device enables efficient electricity generation by leveraging spontaneous polarization based on pulsed light-induced thermal changes. The proposed pyroelectric-photovoltaic device outperforms traditional photovoltaic devices by 2.5 times due to the long-range electric field that occurs under pulse illumination. Optimization of parameters such as pulse frequency, scan speed, and illumination wavelength enhances power harvesting, as demonstrated by a power conversion efficiency of 11.9% and an incident-photon-to-current conversion efficiency of 200% under optimized conditions. This breakthrough enables reconfigurable electrostatic devices and presents an opportunity to accelerate technology that surpasses conventional limits in energy generation.

Wafer-Scale Characterization of 1692-Pixel-Per-Inch Blue Micro-LED Arrays with an Optimized ITO Layer.

Wafer-scale blue micro-light-emitting diode (micro-LED) arrays were fabricated with a pixel size of 12 µm, a pixel pitch of 15 µm, and a pixel density of 1692 pixels per inch, achieved by optimizing the properties of e-beam-deposited and sputter-deposited indium tin oxide (ITO). Although the sputter-deposited ITO (S-ITO) films exhibited a densely packed morphology and lower resistivity compared to the e-beam-deposited ITO (E-ITO) films, the forward voltage (VF) values of a micro-LED with the S-ITO films were higher than those with the E-ITO films. The VF values for a single pixel and for four pixels with E-ITO films were 2.82 V and 2.83 V, respectively, while the corresponding values for S-ITO films were 3.50 V and 3.52 V. This was attributed to ion bombardment damage and nitrogen vacancies in the p-GaN layer. Surprisingly, the VF variations of a single pixel and of four pixels with the optimized E-ITO spreading layer from five different regions were only 0.09 V and 0.10 V, respectively. This extremely uniform VF variation is suitable for creating micro-LED displays to be used in AR and VR applications, circumventing the bottleneck in the development of long-lifespan and high-brightness organic LED devices for industrial mass production.

Conformally direct imprinted inorganic surface corrugation for light extraction enhancement of light emitting diodes.

We describe the fabrication of corrugated inorganic oxide surface via direct single step conformal nanoimprinting to achieve enhanced light extraction in light emitting diodes (LEDs). Nanoscale zinc oxide (ZnO) and indium tin oxide (ITO) corrugated layer were created on a nonplanar GaN LED surface including metal electrode using ultraviolet (UV) assisted conformal nanoimprinting and subsequent inductively coupled plasma reactive ion etching (ICP-RIE) treatment. The total output powers of the surface corrugated LEDs increased by 45.6% for the patterned sapphire substrate LED and 41.9% for the flat c-plane substrate LED without any degradation of the electrical characteristics. The role of the nanoscale corrugations on the light extraction efficiency enhancement was examined using 3-dimensional finite-difference time-domain (FDTD) analysis. It was found that light scattering by subwavelength scale surface corrugation plays important role to redirect the trapped light into radiative modes. This straightforward inorganic oxide imprint method with inherent flexibility provides an efficient way to generate nanoscale surface textures for the production of high power LEDs and optoelectronic devices.

Simple and cost-effective fabrication of size-tunable zinc oxide architectures by multiple size reduction technique.

We present a simple size reduction technique for fabricating 400 nm zinc oxide (ZnO) architectures using a silicon master containing only microscale architectures. In this approach, the overall fabrication, from the master to the molds and the final ZnO architectures, features cost-effective UV photolithography, instead of electron beam lithography or deep-UV photolithography. A photosensitive Zn-containing sol-gel precursor was used to imprint architectures by direct UV-assisted nanoimprint lithography (UV-NIL). The resulting Zn-containing architectures were then converted to ZnO architectures with reduced feature sizes by thermal annealing at 400 °C for 1 h. The imprinted and annealed ZnO architectures were also used as new masters for the size reduction technique. ZnO pillars of 400 nm diameter were obtained from a silicon master with pillars of 1000 nm diameter by simply repeating the size reduction technique. The photosensitivity and contrast of the Zn-containing precursor were measured as 6.5 J cm-2 and 16.5, respectively. Interesting complex ZnO patterns, with both microscale pillars and nanoscale holes, were demonstrated by the combination of dose-controlled UV exposure and a two-step UV-NIL.

Enhanced Light Absorption and Efficient Carrier Collection in MoS2 Monolayers on Au Nanopillars.

We fabricated hybrid nanostructures consisting of MoS2 monolayers and Au nanopillar (Au-NP) arrays. The surface morphology and Raman spectra showed that the MoS2 flakes transferred onto the Au-NPs were very flat and nonstrained. The Raman and photoluminescence intensities of MoS2/Au-NP were 3- and 20-fold larger than those of MoS2 flakes on a flat Au thin film, respectively. The finite-difference time-domain calculations showed that the Au-NPs significantly concentrated the incident light near their surfaces, leading to broadband absorption enhancement in the MoS2 flakes. Compared with a flat Au thin film, the Au-NPs enabled a 6-fold increase in the absorption in the MoS2 monolayer at a wavelength of 615 nm. The contact potential difference mapping showed that the electric potential at the MoS2/Au contact region was higher than that of the suspended MoS2 region by 85 mV. Such potential modulation enabled the Au-NPs to efficiently collect photogenerated electrons from the MoS2 flakes, as revealed by the uniform positive surface photovoltage signals throughout the MoS2 surface.

Optimized film processing of nanosilver colloids for photoluminescence enhancement.

Recently, various research strategies have been employed to improve light extraction efficiency in organic LEDs, including the recent development of localized surface plasmon resonance (LSPR), as well as the more widely-known application of a photonic crystal layer. Here, we report on the development of a process method for forming a two-dimensional nanosilver patterned array to achieve LSPR-coupled light-emission efficiency enhancement. The process scheme involves the spin-coating of nanosilver colloidal ink onto a glass substrate, followed by optimized thermal annealing to create an array of isolated nanosilver islands. The resulting Ag islands are in the size range 50 approximately 80 nm, which is larger than the diameter of the Ag nanoparticles in the colloidal suspension. Then, silicon oxide is thermally sputtered to provide a spacer layer to prevent luminescence quenching of the red-emitting nanocrystal quantum dot (NQD) layer, which is deposited in a subsequent spin-coating process. When the NQD layer is excited, the energy of the photoelectron is confined to the surfaces of the nanosilver islands in the near-field. In this study, the localized surface plasmon resonance peaks were at a wavelength of 625 nm, and out-coupling efficiency was enhanced more than sixfold.

Enhanced optical absorption in conformally grown MoS2 layers on SiO2/Si substrates with SiO2 nanopillars with a height of 50 nm.

The integration of transition metal dichalcogenide (TMDC) layers on nanostructures has attracted growing attention as a means to improve the physical properties of the ultrathin TMDC materials. In this work, the influence of SiO2 nanopillars (NPs) with a height of 50 nm on the optical characteristics of MoS2 layers is investigated. Using a metal organic chemical vapor deposition technique, a few layers of MoS2 were conformally grown on the NP-patterned SiO2/Si substrates without notable strain. The photoluminescence and Raman intensities of the MoS2 layers on the SiO2 NPs were larger than those observed from a flat SiO2 surface. For 100 nm-SiO2/Si wafers, the 50 nm-NP patterning enabled improved absorption in the MoS2 layers over the whole visible wavelength range. Optical simulations showed that a strong electric-field could be formed at the NP surface, which led to the enhanced absorption in the MoS2 layers. These results suggest a versatile strategy to realize high-efficiency TMDC-based optoelectronic devices.

Improved Hydrogen Sensing Performance of AlGaN/GaN Based Gas Sensors with Controlled Surface Nanostructures of Platinum Nanoparticulate Films.

A simple and convenient method for the formation of Pt nanoparticulate films as a sensing material by controlling deposition rates is demonstrated to realize AlGaN/GaN high electron mobility transistor-based high-sensitivity hydrogen gas sensors. The Pt nanoparticulate films produced at a low deposition rate (Sample 1: 0.3 Å/s) exhibit a smooth surface and uniformly sized Pt grains, while the films produced at a high deposition rate (Sample 2: 1.5 Å/s) consist of bigger Pt grains and more coalesced grains on the surface. The deposition rate has a distinct effect on the surface morphology. The maximum current change percentage for sample 1 is 2.1×10³% at a VGS of -4.3 V while that for sample 2 is 4.4×10³% at a VGS of -4.5 V. Sample 2 has a two times larger current response to hydrogen gas than sample 1, which results from a large increase in channel conduction induced by a huge catalytic surface area of Pt nanoparticulate films. This technique offers an alternative method for the facile deposition of a sensing material and is potentially useful in various applications, such as gas, chemical, and biological sensors.

Mass fabrication of resistive random access crossbar arrays by step and flash imprint lithography.

Step and flash imprint lithography (SFIL) is a promising method recently used for next generation lithographic technology because it is a high-speed process that can be carried out at room temperature and low pressures. Improvements made to SFIL enable the replication of crossbar patterns with a high resolution and the development of suitable materials and techniques to achieve high resolution capability. In this study, SFIL is used to fabricate high-density random access crossbar arrays based on a NiO resistive switching system. The bottom and top electrodes are transferred onto silicon wafers perpendicular to each electrode using the inductively coupled plasma reactive ion etching (ICP-RIE) technique. Direct metal etching without a wet-based process minimizes damage to the electrode surface. The I-V curves of individual active cells (70 x 70 nm(2)) for crossbar arrays reveal the unipolar resistive switching (RS) behaviour of the fabricated device. A high off/on resistance ratio (>10(4)) and reproducible resistance switching characteristics for each active cell were found in different fields and for different wafers. The experimental data indicate that high-density crossbar arrays can be well replicated and that the electrical performance of these arrays is reliable.

Strong Light Confinement in Metal-Coated Si Nanopillars: Interplay of Plasmonic Effects and Geometric Resonance.

We investigated the influence of metal coating on the optical characteristics of Si nanopillar (NP) arrays with and without thin metal layers coated on the sample surface. The reflection dips of the metal-coated arrays were much broader and more pronounced than those of the bare arrays. The coated metal layers consisted of two parts-the metal disks on the Si NP top and the holey metal backreflectors on the Si substrate. The Mie-like geometrical resonance in the NPs, the localized surface plasmons in the metal disks, and the propagation of surface plasmon polariton along the backreflector/substrate interface could contribute to the reflection spectra. Finite-difference time-domain simulation results showed that the interplay of the plasmonic effects and the geometric resonance gave rise to significantly enhanced light confinement and consequent local absorption in the metal-Si hybrid nanostructures.

Active Adoption of Void Formation in Metal-Oxide for All Transparent Super-Performing Photodetectors.

Could 'defect-considered' void formation in metal-oxide be actively used? Is it possible to realize stable void formation in a metal-oxide layer, beyond unexpected observations, for functional utilization? Herein we demonstrate the effective tailoring of void formation of NiO for ultra-sensitive UV photodetection. NiO was formed onto pre-sputtered ZnO for a large size and spontaneously formed abrupt p-NiO/n-ZnO heterojunction device. To form voids at an interface, rapid thermal process was performed, resulting in highly visible light transparency (85-95%). This heterojunction provides extremely low saturation current (<0.1 nA) with an extraordinary rectifying ratio value of over 3000 and works well without any additional metal electrodes. Under UV illumination, we can observe the fast photoresponse time (10 ms) along with the highest possible responsivity (1.8 A W(-1)) and excellent detectivity (2 × 10(13) Jones) due to the existence of an intrinsic-void layer at the interface. We consider this as the first report on metal-oxide-based void formation (Kirkendall effect) for effective photoelectric device applications. We propose that the active adoption of 'defect-considered' Kirkendall-voids will open up a new era for metal-oxide based photoelectric devices.

Interfacial Mode Interactions of Surface Plasmon Polaritons on Gold Nanodome Films.

Hollow metallic nanodome structures were fabricated using anodized aluminum oxide (AAO) nanopores as deposition and sacrificial templates. Individual Au nanodomes inherit the unique shapes of the well-defined AAO membranes whose pedestal cells become square or hexagonal lattices with hemispheres in close proximity. Minimal contact between the hollow nanodomes and the glass substrate provide an identical dielectric medium across the film. The nanodome Au films support surface plasmon polaritons (SPPs) of strong air-Au and weak Au-glass modes in the light transmission dispersions. The mode crossings of distinct SPPs exhibit characteristic energy gaps, which depend on the periodic geometries of the nanostructures.

Thermally Stable Silver Nanowires-Embedding Metal Oxide for Schottky Junction Solar Cells.

Thermally stable silver nanowires (AgNWs)-embedding metal oxide was applied for Schottky junction solar cells without an intentional doping process in Si. A large scale (100 mm(2)) Schottky solar cell showed a power conversion efficiency of 6.1% under standard illumination, and 8.3% under diffused illumination conditions which is the highest efficiency for AgNWs-involved Schottky junction Si solar cells. Indium-tin-oxide (ITO)-capped AgNWs showed excellent thermal stability with no deformation at 500 °C. The top ITO layer grew in a cylindrical shape along the AgNWs, forming a teardrop shape. The design of ITO/AgNWs/ITO layers is optically beneficial because the AgNWs generate plasmonic photons, due to the AgNWs. Electrical investigations were performed by Mott-Schottky and impedance spectroscopy to reveal the formation of a single space charge region at the interface between Si and AgNWs-embedding ITO layer. We propose a route to design the thermally stable AgNWs for photoelectric device applications with investigation of the optical and electrical aspects.

Mie Resonance-Modulated Spatial Distributions of Photogenerated Carriers in Poly(3-hexylthiophene-2,5-diyl)/Silicon Nanopillars.

Organic/silicon hybrid solar cells have great potential as low-cost, high-efficiency photovoltaic devices. The superior light trapping capability, mediated by the optical resonances, of the organic/silicon hybrid nanostructure-based cells enhances their optical performance. In this work, we fabricated Si nanopillar (NP) arrays coated with organic semiconductor, poly(3-hexylthiophene-2,5-diyl), layers. Experimental and calculated optical properties of the samples showed that Mie-resonance strongly concentrated incoming light in the NPs. Spatial mapping of surface photovoltage, i.e., changes in the surface potential under illumination, using Kelvin probe force microscopy enabled us to visualize the local behavior of the photogenerated carriers in our samples. Under red light, surface photovoltage was much larger (63 meV) on the top surface of a NP than on a planar sample (13 meV), which demonstrated that the confined light in the NPs produced numerous carriers within the NPs. Since the silicon NPs provide pathways for efficient carrier transportation, high collection probability of the photogenerated carriers near the NPs can be expected. This suggests that the optical resonance in organic/silicon hybrid nanostructures benefits not only broad-band light trapping but also efficient carrier collection.

Transparent conductor-embedding nanocones for selective emitters: optical and electrical improvements of Si solar cells.

Periodical nanocone-arrays were employed in an emitter region for high efficient Si solar cells. Conventional wet-etching process was performed to form the nanocone-arrays for a large area, which spontaneously provides the graded doping features for a selective emitter. This enables to lower the electrical contact resistance and enhances the carrier collection due to the high electric field distribution through a nanocone. Optically, the convex-shaped nanocones efficiently reduce light-reflection and the incident light is effectively focused into Si via nanocone structure, resulting in an extremely improved the carrier collection performances. This nanocone-arrayed selective emitter simultaneously satisfies optical and electrical improvement. We report the record high efficiency of 16.3% for the periodically nanoscale patterned emitter Si solar cell.

Selective photochemical synthesis of Ag nanoparticles on position-controlled ZnO nanorods for the enhancement of yellow-green light emission.

A novel technique for the selective photochemical synthesis of silver (Ag) nanoparticles (NPs) on ZnO nanorod arrays is established by combining ultraviolet-assisted nanoimprint lithography (UV-NIL) for the definition of growth sites, hydrothermal reaction for the position-controlled growth of ZnO nanorods, and photochemical reduction for the decoration of Ag NPs on the ZnO nanorods. During photochemical reduction, the size distribution and loading of Ag NPs on ZnO nanorods can be tuned by varying the UV-irradiation time. The photochemical reduction is hypothesized to facilitate the adsorbed citrate ions on the surface of ZnO, allowing Ag ions to preferentially form Ag NPs on ZnO nanorods. The ratio of visible emission to ultraviolet (UV) emission for the Ag NP-decorated ZnO nanorod arrays, synthesized for 30 min, is 20.5 times that for the ZnO nanorod arrays without Ag NPs. The enhancement of the visible emission is believed to associate with the surface plasmon (SP) effect of Ag NPs. The Ag NP-decorated ZnO nanorod arrays show significant SP-induced enhancement of yellow-green light emission, which could be useful in optoelectronic applications. The technique developed here requires low processing temperatures (120 °C and lower) and no high-vacuum deposition tools, suitable for applications such as flexible electronics.

Wafer-scale nanoconical frustum array crystalline silicon solar cells: promising candidates for ultrathin device applications.

A high photocurrent of 36.96 mA cm(-2) was achieved for wafer-scaled crystalline Si solar cells with hexagonal nanoconical frustum arrays at the surface. Optical simulations showed that the expected photocurrent of 10 µm thick nanostructured cells could slightly exceed the Lambertian limit.

Incident light adjustable solar cell by periodic nanolens architecture.

Could nanostructures act as lenses to focus incident light for efficient utilization of photovoltaics? Is it possible, in order to avoid serious recombination loss, to realize periodic nanostructures in solar cells without direct etching in a light absorbing semiconductor? Here we propose and demonstrate a promising architecture to shape nanolenses on a planar semiconductor. Optically transparent and electrically conductive nanolenses simultaneously provide the optical benefit of modulating the incident light and the electrical advantage of supporting carrier transportation. A transparent indium-tin-oxide (ITO) nanolens was designed to focus the incident light-spectrum in focal lengths overlapping to a strong electric field region for high carrier collection efficiency. The ITO nanolens effectively broadens near-zero reflection and provides high tolerance to the incident light angles. We present a record high light-conversion efficiency of 16.0% for a periodic nanostructured Si solar cell.