Low temperature-grown GaAs carrier lifetime evaluation by double optical pump terahertz time-domain emission spectroscopy.

We present the use of a "double optical pump" technique in terahertz time-domain emission spectroscopy as an alternative method to investigate the lifetime of photo-excited carriers in semiconductors. Compared to the commonly employed optical pump-probe transient photo-reflectance, this non-contact and room temperature characterization technique allows relative ease in achieving optical alignment. The technique was implemented to evaluate the carrier lifetime in low temperature-grown gallium arsenide (LT-GaAs). The carrier lifetime values deduced from "double optical pump" THz emission decay curves show good agreement with data obtained from standard transient photo-reflectance measurements on the same LT-GaAs samples grown at 250 °C and 310 °C.

Confined photocarrier transport in InAs pyramidal quantum dots via terahertz time-domain spectroscopy.

We present experimental demonstration of photocarrier dynamics in InAs quantum dots (QDs) via terahertz (THz) time-domain spectroscopy (TDS) using two excitation wavelengths and observing the magnetic field polarity characteristics of the THz signal. The InAs QDs was grown using standard Stranski-Krastanow technique on semi-insulating GaAs substrate. Excitation pump at 800 nm- and 910 nm-wavelength were used to distinguish THz emission from the InAs/GaAs matrix and InAs respectively. THz-TDS at 800 nm pump revealed intense THz emission comparable to a bulk p-InAs. For 910 nm pump, the THz emission generally weakened and upon applying external magnetic field of opposite polarities, the THz time-domain plot exhibited anomalous phase-shifting. This was attributed to the possible current-surge associated with the permanent dipole in the QD.

An ambipolar PEDOT-perfluorinated porphyrin electropolymer: application as an active material in energy storage systems.

The development of functional organic materials is crucial for the advancement of various fields, such as optoelectronics, energy storage, sensing, and biomedicine. In this context, we successfully prepared a stable ambipolar perfluoroporphyrin-based polymeric film by electrochemical synthesis. Our strategy involved the synthesis of a novel tetra-pentafluorophenyl porphyrin covalently linked to four 3,4-ethylenedioxythiophene (EDOT) moieties. The resulting monomer, EDOT-TPPF16, was obtained through a straightforward synthetic approach with a good overall yield. The unique molecular structure of EDOT-TPPF16 serves a dual function, with EDOT moieties allowing electropolymerization for polymeric film formation, while the electron-acceptor porphyrin core enables electrochemical reduction and electron transport. The electrochemical polymerization permits the polymer (PEDOT-TPPF16) synthesis and film formation in a reproducible and controllable manner in one step at room temperature. Spectroelectrochemical experiments confirmed that the porphyrin retained its optoelectronic properties within the polymeric matrix after the electrochemical polymerization. The obtained polymeric material exhibited stable redox capabilities. Current charge-discharge cycles and electrochemical impedance spectroscopy of the electrochemically generated organic film demonstrated that the polymer could be applied as a promising active material in the development of supercapacitor energy storage devices.

Genomic Analysis of Ciprofloxacin-Resistant Salmonella enterica Serovar Kentucky ST198 From Spanish Hospitals.

Salmonella enterica serovar Kentucky (S. Kentucky) with sequence type (ST) 198 and highly resistant to ciprofloxacin (ST198-Cip R ) has emerged as a global MDR clone, posing a threat to public health. In the present study, whole genome sequencing (WGS) was applied to characterize all Cip R S. Kentucky detected in five Spanish hospitals during 2009-2018. All Cip R isolates (n = 13) were ST198 and carried point mutations in the quinolone resistance-determining regions (QRDRs) of both gyrA (resulting in Ser83Phe and Asp87Gly, Asp87Asn, or Asp87Tyr substitutions in GyrA) and parC (with Thr57Ser and Ser80Ile substitutions in ParC). Resistances to other antibiotics (ampicillin, chloramphenicol, gentamicin, streptomycin, sulfonamides, and tetracycline), mediated by the bla TEM- 1 B , catA1, aacA5, aadA7, strA, strB, sul1, and tet(A) genes, and arranged in different combinations, were also observed. Analysis of the genetic environment of the latter resistance genes revealed the presence of multiple variants of SGI1 (Salmonella genomic island 1)-K and SGI1-P, where all these resistance genes except catA1 were placed. IS26 elements, found at multiple locations within the SGI1 variants, have probably played a crucial role in their generation. Despite the wide diversity of SGI1-K- and SGI1-P-like structures, phylogenetic analysis revealed a close relationship between isolates from different hospitals, which were separated by a minimum of two and a maximum of 160 single nucleotide polymorphisms. Considering that S. enterica isolates resistant to fluoroquinolones belong to the high priority list of antibiotic-resistant bacteria compiled by the World Health Organization, continuous surveillance of the S. Kentucky ST198-CIP R clone is required.

Effect of heteroepitaxial growth on LT-GaAs: ultrafast optical properties.

Epitaxial low temperature grown GaAs (LT-GaAs) on silicon (LT-GaAs/Si) has the potential for terahertz (THz) photoconductive antenna applications. However, crystalline, optical and electrical properties of heteroepitaxial grown LT-GaAs/Si can be very different from those grown on semi-insulating GaAs substrates ('reference'). In this study, we investigate optical properties of an epitaxial grown LT-GaAs/Si sample, compared to a reference grown under the same substrate temperature, and with the same layer thickness. Anti-phase domains and some crystal misorientation are present in the LT-GaAs/Si. From coherent phonon spectroscopy, the intrinsic carrier densities are estimated to be 1015 cm-3for either sample. Strong plasmon damping is also observed. Carrier dynamics, measured by time-resolved THz spectroscopy at high excitation fluence, reveals markedly different responses between samples. Below saturation, both samples exhibit the desired fast response. Under optical fluences ⩾54µJ cm-2, the reference LT-GaAs layer shows saturation of electron trapping states leading to non-exponential behavior, but the LT-GaAs/Si maintains a double exponential decay. The difference is attributed to the formation of As-As and Ga-Ga bonds during the heteroepitaxial growth of LT-GaAs/Si, effectively leading to a much lower density of As-related electron traps.

A modulation-doped heterostructure-based terahertz photoconductive antenna emitter with recessed metal contacts.

We present the implementation of an efficient terahertz (THz) photoconductive antenna (PCA) emitter design that utilizes high mobility carriers in the two-dimensional electron gas (2DEG) of a modulation-doped heterostructure (MDH). The PCA design is fabricated with recessed metal electrodes in direct contact with the 2DEG region of the MDH. We compare the performance of the MDH PCA having recessed contacts with a PCA fabricated on bulk semi-insulating GaAs, on low temperature-grown GaAs, and a MDH PCA with the contacts fabricated on the surface. By recessing the contacts, the applied bias can effectively accelerate the high-mobility carriers within the 2DEG, which increases the THz power emission by at least an order of magnitude compared to those with conventional structures. The dynamic range (62 dB) and bandwidth characteristics (3.2 THz) in the power spectrum are shown to be comparable with the reference samples. Drude-Lorentz simulations corroborate the results that the higher-mobility carriers in the MDH, increase the THz emission. The saturation characteristics were also measured via optical fluence dependence, revealing a lower saturation value compared to the reference samples. The high THz conversion efficiency of the MDH-PCA with recessed contacts at low optical power makes it an attractive candidate for THz-time domain spectroscopy systems powered by low power fiber lasers.

Total HCV core antigen assay. A new marker of HCV viremia and its application during treatment of chronic hepatitis C.

The present study assesses the clinical usefulness of the hepatitis C core antigen assay for monitoring of patients being treated for chronic hepatitis C virus (HCV) infection. Eighty-six serum samples were selected at random from 16 patients and levels of HCV RNA and HCV core antigen were determined simultaneously and in parallel to compare both techniques. The data obtained were compared by Pearson's correlation and the coefficients calculated by Fisher transformation and by calculating the difference and standard error. A good linear correlation was observed between both techniques. Maximum correlation, with significant difference, was found between patients infected with the 1a genotype and other genotypes. In conclusion, the HCV core antigen assay is useful for the diagnosis of early infection; however, its use for determining the exact timing of viral elimination during treatment is clearly unsuitable.

Estudo de mecanismos e fatores relacionados com o abuso sexual em crianças e adolescentes do sexo feminino / Study of mechanisms and factors related to sexual abuse in female children and dolescents

Objetivo:estudar mecanismos e fatores relacionados com o abuso sexual, comparando suas freqüências entre vítimas crianças e adolescentes. Métodos: estudo retrospectivo de 617 vítimas de abuso sexual atendidas entre julho de 1994 e agosto de 1999 pelo Centro de Referência da Saúde da Mulher: 71 crianças (idade<10 anos) e 546 adolescentes (10 a 20 anos). As variáveis de estudo foram crime sexual; constrangimento; presunção de violência; tipificação do agressor; número de agressores; situação da vítima no momento do crime; e ocorrência de traumas físicos. Os dados foram informatizados em programa Epi Info 6 e os resultados analisados pelo teste de X2. Resultados: o estupro ocorreu em 90,8 por cento das adolescentes e o atentado violento ao pudor em 46,5 por cento das crianças. A violência presumida (VP) foi mais freqüente nas crianças (63,4 por cento) e a grave ameaça nas adolescentes (63,2 por cento). A inocencia consilli foi VP exclusivas entre crianças, atingindo 59,5 por cento das dolescentes. Entre crianças, 84,5 por cento foram abusadas por agressores identificáveis, geralmente do núcleo familiar, enquanto desconhecidos violentaram 72,3 por cento das adolescentes. Nas crianças, o abuso ocorreu em 42,3 por cento em suas residências e em 28,2 por cento na do agressor. Adolescentes foram vitimadas durante atividades cotidianas (34,8 por cento) e no percurso do trabalho ou escola (28,4 por cento). A maioria das pacientes não apresentou traumas físicos genitais ou extragenitais. Conclusões: crianças foram submetidas, principalmente, ao atentado violento ao pudor, perpetrado por agressor conhecido, por meio de violência presumida e em ambientes privados. Nas adolescentes predominou o estupro por agressores desconhecidos, sob grave ameaça, em ambientes não domésticos