MUC1 promotes glioblastoma progression and TMZ resistance by stabilizing EGFRvIII.

Epidermal growth factor receptor variant III (EGFRvIII) is a mutant isoform of EGFR with a deletion of exons 2-7 making it insensitive to EGF stimulation and downstream signal constitutive activation. However, the mechanism underlying the stability of EGFRvIII remains unclear. Based on CRISPR-Cas9 library screening, we found that mucin1 (MUC1) is essential for EGFRvIII glioma cell survival and temozolomide (TMZ) resistance. We revealed that MUC1-C was upregulated in EGFRvIII-positive cells, where it enhanced the stability of EGFRvIII. Knockdown of MUC1-C increased the colocalization of EGFRvIII and lysosomes. Upregulation of MUC1 occurred in an NF-κB dependent manner, and inhibition of the NF-κB pathway could interrupt the EGFRvIII-MUC1 feedback loop by inhibiting MUC1-C. In a previous report, we identified AC1Q3QWB (AQB), a small molecule that could inhibit the phosphorylation of NF-κB. By screening the structural analogs of AQB, we obtained EPIC-1027, which could inhibit the NF-κB pathway more effectively. EPIC-1027 disrupted the EGFRvIII-MUC1-C positive feedback loop in vitro and in vivo, inhibited glioma progression, and promoted sensitization to TMZ. In conclusion, we revealed the pivotal role of MUC1-C in stabilizing EGFRvIII in glioblastoma (GBM) and identified a small molecule, EPIC-1027, with great potential in GBM treatment.

Large-Area Flexible Memory Arrays of Oriented Molecular Ferroelectric Single Crystals with Nearly Saturated Polarization.

Molecular ferroelectrics (MFs) have been proven to demonstrate excellent properties even comparable to those of inorganic counterparts usually with heavy metals. However, the validation of their device applications is still at the infant stage. The polycrystalline feature of conventionally obtained MF films, the patterning challenges for microelectronics and the brittleness of crystalline films significantly hinder their development for organic integrated circuits, as well as emerging flexible electronics. Here, a large-area flexible memory array is demonstrated of oriented molecular ferroelectric single crystals (MFSCs) with nearly saturated polarization. Highly-uniform MFSC arrays are  prepared on large-scale substrates including Si wafers and flexible substrates using an asymmetric-wetting and microgroove-assisted coating (AWMAC) strategy. Resultant flexible memory arrays exhibit excellent nonvolatile memory properties with a low-operating voltage of <5 V, i.e., nearly saturated ferroelectric polarization (6.5 µC cm-2 ), and long bending endurance (>103 ) under various bending radii. These results may open an avenue for scalable flexible MF electronics with high performance.

Wafer-scale transferred multilayer MoS2 for high performance field effect transistors.

Chemical vapor deposition synthesis of semiconducting transition metal dichalcogenides (TMDs) offers a new route to build next-generation semiconductor devices. But realization of continuous and uniform multilayer (ML) TMD films is still limited by their specific growth kinetics, such as the competition between surface and interfacial energy. In this work, a layer-by-layer vacuum stacking transfer method is applied to obtain uniform and non-destructive ML-MoS2 films. Back-gated field effect transistor (FET) arrays of 1L- and 2L-MoS2 are fabricated on the same wafer, and their electrical performances are compared. We observe a significant increase of field-effect mobility for 2L-MoS2 FETs, up to 32.5 cm2 V-1 s-1, which is seven times higher than that of 1L-MoS2 (4.5 cm2 V-1 s-1). Then we also fabricated 1L-, 2L-, 3L-, and 4L-MoS2 FETs to further investigate the thickness-dependent characteristics of transferred ML-MoS2. Measurement results show a higher mobility but a smaller current on/off ratio as the layer number increases, suggesting that a balance between mobility and current on/off ratio can be achieved in 2L- and 3L-MoS2 FETs. Dual-gated structure is also investigated to demonstrate an improved electrostatic control of the ML-MoS2 channel.

Mucilaginibacter xinganensis sp. nov., a phenanthrene-degrading bacterium isolated from wetland soil.

An aerobic, Gram-stain negative, rod-shaped and non-motile strain, BJC16-A31T, was isolated from the wetland soil sample taken from Daxing'anling, Heilongjiang, People's Republic of China. Strain BJC16-A31T was found to be oxidase- and catalase-positive, and produced light orange colonies on modified R2A agar. Phylogenetic analysis based on 16S rRNA gene sequences showed that strain BJC16-A31T is closely related to Mucilaginibacter gotjawali SA3-7T with 96.54% sequence similarity and it formed a separate lineage in the genus Mucilaginibacter. Strain BJC16-A31T contained menaquinone-7 (MK-7) as the predominant isoprenoid quinine. Anteiso-C15:0, C16:0 and anteiso-C15:0 were the major fatty acids. The major polar lipids were phosphatidylethanolamine, six unidentified polar lipid, two unidentified aminophospholipids and one unidentified aminolipid. The genome is composed of a circular 5,301,339 bp chromosome with average G + C percentage of 42.25%. The Average Nucleotide Identity (ANI) between strain BJC16-A31T and M. gotjawali SA3-7T was 77.51%. Combined phenotypic, chemotaxonomic, phylogenetic and genomic characteristics support the conclusion that strain BJC16-A31T represents a novel species of the genus Mucilaginibacter, for which the name Mucilaginibacter xinganensis sp. nov. is proposed. The type strain is BJC16-A31T (= CGMCC 1.12728T = NBRC 110384T).

Fabrication of Uniform Gold Nanopatterns on Graphene by Using Nanosphere Lithography.

In this study, we have realized controllable fabrication of gold nanopatterns on pristine monolayer graphene by using nanosphere lithography, in which polystyrene (PS) spheres are used as templates. With this method, periodically ordered triangular Au nanopatterns are uniformly formed on graphene surface. Micro-Raman spectroscopy shows that these sacrificial PS templates have no obvious effect on graphene surface structure while the subsequently formed Au nanopatterns are found to enhance Raman intensity of G and 2D bands by surface plasmon resonance. The compressive stress introduced in the metal deposition process leads to an obvious blue shift of 2D band. Besides, the metal-induced doping effect reduces the intensity ratio between 2D and G bands. This uniform arrangement of metal nanostructure is expected to grow other nanomaterials or used as Raman enhancement substrate in biomedicine, catalyzer and optics areas.

Competing Mechanisms for Photocurrent Induced at the Monolayer-Multilayer Graphene Junction.

Graphene is characterized by demonstrated unique properties for potential novel applications in photodetection operated in the frequency range from ultraviolet to terahertz. To date, detailed work on identifying the origin of photoresponse in graphene is still ongoing. Here, scanning photocurrent microscopy to explore the nature of photocurrent generated at the monolayer-multilayer graphene junction is employed. It is found that the contributing photocurrent mechanism relies on the mismatch of the Dirac points between the monolayer and multilayer graphene. For overlapping Dirac points, only photothermoelectric effect (PTE) is observed at the junction. When they do not coincide, a different photocurrent due to photovoltaic effect (PVE) appears and becomes more pronounced with larger separation of the Dirac points. While only PTE is reported for a monolayer-bilayer graphene junction in the literature, this work confirms the coexistence of PTE and PVE, thereby extending the understanding of photocurrent in graphene-based heterojunctions.

Laser-based white-light source for high-speed underwater wireless optical communication and high-efficiency underwater solid-state lighting.

White light generated by mixing the red, green, and blue laser diodes (RGB LDs) for simultaneous high-speed underwater wireless optical communication (UWOC) and high-efficiency underwater solid-state lighting (SSL) was proposed and demonstrated experimentally for the first time. The allowable maximum real-time data transmission rates of 3.2 Gbps, 3.4 Gbps, and 3.1 Gbps for RGB LDs with corresponding BERs of 3.6 × 10-3, 3.5 × 10-3 and 3.7 × 10-3 were obtained at a 2.3 m underwater transmission distance using an on-off keying (OOK) modulation scheme, respectively. And the corresponding UWOC aggregate data rate of 9.7 Gbps was achieved based on RGB LDs-based wavelength-division multiplexing (WDM) UWOC. Moreover, UWOC and underwater SSL by using RGB LDs mixed white light were investigated at different scenarios over an underwater link of 2.3 m. The RGB LDs mixed white light-based UWOC system without optical diffusers yielded a maximum allowable data rate of 8.7 Gbps with Commission International de l'Eclairage coordinates (CIE) of (0.3154, 0.3354), a correlated color temperature of 6322 K, a color rendering index of 69.3 and a corresponding illuminance of 7084 lux. Furthermore, optical diffusers were employed to provide large-area underwater SSL. The LDs mixed white light-based UWOC system with line and circle optical diffusers implemented data rates of 5.9 Gbps and 6.6 Gbps with CIE coordinates of (0.3183, 0.3269) and (0.3298, 0.3390), respectively. This work suggests the potential of LDs for applications in high-efficiency underwater white-light SSL and high-speed UWOC.

34.5 m underwater optical wireless communication with 2.70 Gbps data rate based on a green laser diode with NRZ-OOK modulation.

To enable high-speed long-distance underwater optical wireless communication (UOWC) supplementing traditional underwater wireless communication, a low-power 520 nm green laser diode (LD) based UOWC system was proposed and experimentally demonstrated to implement maximal communication capacity of up to 2.70 Gbps data rate over a 34.5 m underwater transmission distance by using non-return-to-zero on-off keying (NRZ-OOK) modulation scheme. Moreover, maximum data rates of up to 4.60 Gbps, 4.20 Gbps, 3.93 Gbps, 3.88 Gbps, and 3.48 Gbps at underwater distances of 2.3 m, 6.9 m, 11.5 m, 16.1 m and 20.7 m were achieved, respectively. The light attenuation coefficient of ~0.44 dB/m was obtained and the beam divergence angle is 0.35°, so the aallowable underwater transmission distance can be estimated to be ~90.7 m at a data rate of 0.15 Gbps with a corresponding received light-output power of -33.01 dBm and a bit-error rate (BER) of 2.0 ×10-6. In addition, when the data rate is up to 1 Gbps, the UOWC distance is predicted to be ~62.7 m for our proposed UOWC system. The achievements we make are suitable for applications requiring high-speed long-distance real-time UOWC.

Stable and Fast-Response Capacitive Humidity Sensors Based on a ZnO Nanopowder/PVP-RGO Multilayer.

In this paper, capacitive-type humidity sensors were prepared by sequentially drop-coating the aqueous suspensions of zinc oxide (ZnO) nanopowders and polyvinyl pyrrolidone-reduced graphene oxide (PVP-RGO) nanocomposites onto interdigitated electrodes. Significant improvements in both sensitivity and linearity were achieved for the ZnO/PVP-RGO sensors compared with the PVP-RGO/ZnO, PVP-RGO, and ZnO counterparts. Moreover, the produced ZnO/PVP-RGO sensors exhibited rather small hysteresis, fast response-recovery time, and long-term stability. Based on morphological and structural analyses, it can be inferred that the excellent humidity sensing properties of the ZnO/PVP-RGO sensors may be attributed to the high surface-to-volume ratio of the multilayer structure and the supporting roles of the PVP-RGO nanocomposites. The results in this work hence provide adequate guidelines for designing high-performance humidity sensors that make use of the multilayer structure of semiconductor oxide materials and PVP-RGO nanocomposites.

[Distribution of diatoms in Chuanyang River of Pudong new area of Shanghai and its forensic application].

OBJECTIVE: To investigate the quantity and species distribution of diatoms in Chuanyang River of Pudong new area of Shanghai and provide references for the invesitigation of water body in forensic practice. METHODS: The water samples collected from 15 areas in Chuanyang River of Pudong new area in September 2012 were examined by microscope to identify the species of diatoms. RESULTS: Cyclotella and Pinnularia were found to be the dominant species within the 12 species of diatoms in Chuanyang River, which showed differences in species among the sections of Huangpu River, the center and the East China Sea. CONCLUSION: The differences in subsectional distribution of diatom species in Chuanyang River may provide a new foundation for forensic identification in drowning cases especially in the determination of falling location.

High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes.

Two-dimensional (2D) transitional metal dichalcogenides (TMDs) have garnered significant attention due to their potential for next-generation electronics, which require device scaling. However, the performance of TMD-based field-effect transistors (FETs) is greatly limited by the contact resistance. This study develops an effective strategy to optimize the contact resistance of WSe2 FETs by combining contact doping and 2D metallic electrode materials. The contact regions were doped using a laser, and the metallic TaSe2 flakes were stacked on doped WSe2 as electrodes. Doping the contact areas decreases the depletion width, while introducing the TaSe2 contact results in a lower Schottky barrier. This method significantly improves the electrical performance of the WSe2 FETs. The doped WSe2/TaSe2 contact exhibits an ultralow Schottky barrier height of 65 meV and a contact resistance of 11 kΩ·µm, which is a 50-fold reduction compared to the conventional Cr/Au contact. Our method offers a way on fabricating high-performance 2D FETs.

Revealing the origin of PL evolution of InSe flake induced by laser irradiation.

Two-dimensional InSe has been considered as a promising candidate for novel optoelectronic devices owing to large electron mobility and a near-infrared optical band gap. However, its widespread applications suffer from environmental instability. A lot of theoretical studies on the degradation mechanism of InSe have been reported whereas the experimental proofs are few. Meanwhile, the role of the extrinsic environment is still obscure during the degradation. As a common technique of studying the degradation mechanism of 2D materials, laser irradiation exhibits many unique advantages, such as being fast, convenient, and offering in situ compatibility. Here, we have developed a laser-treated method, which involves performing repeated measurements at the same point while monitoring the evolution of the resulting PL, to systematically study the photo-induced degradation process of InSe. Interestingly, we observe different evolution behavior of PL intensity under weak irradiation and strong irradiation. Our experimental results indicate the vacancy passivation and degrading effect simultaneously occurring in InSe under a weak laser irradiation, resulting in the PL increasing first and then decreasing during the measurement. Meanwhile we also notice that the passivation has a stronger effect on the PL than the degrading effect of weak oxidation. In contrast, under a strong laser irradiation, the InSe suffers serious destruction caused by excess heating and intense oxidation. This leads to a direct decrease of PL and corresponding oxidative products. Our work provides a reliable experimental supplement to the photo oxidation study of InSe and opens up a new avenue to regulate the PL of InSe.

Twist-angle-dependent momentum-space direct and indirect interlayer excitons in WSe2/WS2 heterostructure.

Interlayer excitons (ILEs) in the van der Waals (vdW) heterostructures of type-II band alignment transition metal dichalcogenides (TMDCs) have attracted significant interest owing to their unique exciton properties and potential in quantum information applications. However, the new dimension that emerges with the stacking of structures with a twist angle leads to a more complex fine structure of ILEs, presenting both an opportunity and a challenge for the regulation of the interlayer excitons. In this study, we report the evolution of interlayer excitons with the twist angle in the WSe2/WS2 heterostructure and identify the direct (indirect) interlayer excitons by combining photoluminescence (PL) and density functional theory (DFT) calculations. Two interlayer excitons with opposite circular polarization assigned to the different transition paths of K-K and Q-K were observed. The nature of the direct (indirect) interlayer exciton was confirmed by circular polarization PL measurement, excitation power-dependent PL measurement and DFT calculations. Furthermore, by applying an external electric field to regulate the band structure of the WSe2/WS2 heterostructure and control the transition path of the interlayer excitons, we could successfully realize the regulation of interlayer exciton emission. This study provides more evidence for the twist-angle-based control of heterostructure properties.

Dewetting-Assisted Patterning of Organic Semiconductors for Micro-OLED Arrays with a Pixel Size of 1 µm.

The emergence of near-eye displays, such as head-mounted displays, is triggering a requirement for highly enhanced display resolution. High-resolution micro-displays with micro-organic light-emitting diodes (micro-OLEDs) can be a preferential candidate, owing to the mature industrialization of OLEDs along with the advantages of flexibility, light weight, and ease of processing. However, micro-OLEDs with pixel sizes down to micrometers are difficult to be achieved using conventional techniques such as fine metal mask evaporation and lithography. Here, a solution-processing approach to pattern organic semiconductors (OSCs) for micro-OLED arrays with the assistance of templated dewetting is demonstrated. Solvents containing organic functional materials are dewetted on the surface with hydrophobic/hydrophilic patterns to form ordered droplet arrays using dip-coating. Subsequently, patterned OSC films are produced by effectively controlling solvent evaporation. Micro-OLED arrays with a pixel size down to 1 µm are successfully fabricated by further deposition of emitting/electron transport layers and top electrodes. This approach can open an avenue for low-cost manufacturing of flexible and high-resolution micro-displays.

An Ultrafast WSe2 Photodiode Based on a Lateral p-i-n Homojunction.

High-quality homogeneous junctions are of great significance for developing transition metal dichalcogenides (TMDs) based electronic and optoelectronic devices. Here, we demonstrate a lateral p-type/intrinsic/n-type (p-i-n) homojunction based multilayer WSe2 diode. The photodiode is formed through selective doping, more specifically by utilizing self-aligning surface plasma treatment at the contact regions, while keeping the WSe2 channel intrinsic. Electrical measurements of such a diode reveal an ideal rectifying behavior with a current on/off ratio as high as 1.2 × 106 and an ideality factor of 1.14. While operating in the photovoltaic mode, the diode presents an excellent photodetecting performance under 450 nm light illumination, including an open-circuit voltage of 340 mV, a responsivity of 0.1 A W-1, and a specific detectivity of 2.2 × 1013 Jones. Furthermore, benefiting from the lateral p-i-n configuration, the slow photoresponse dynamics including the photocarrier diffusion in undepleted regions and photocarrier trapping/detrapping due to dopants or doping process induced defect states are significantly suppressed. Consequently, a record-breaking response time of 264 ns and a 3 dB bandwidth of 1.9 MHz are realized, compared with the previously reported TMDs based photodetectors. The above-mentioned desirable properties, together with CMOS compatible processes, make this WSe2 p-i-n junction diode promising for future applications in self-powered high-frequency weak signal photodetection.

Remarkable quality improvement of as-grown monolayer MoS2 by sulfur vapor pretreatment of SiO2/Si substrates.

Monolayer MoS2 is a direct bandgap semiconductor which is believed to be one of the most promising candidates for optoelectronic devices. Chemical vapor deposition (CVD) is the most popular method to synthesize monolayer MoS2 with a large area. However, many defects are always found in monolayer MoS2 grown by CVD, such as sulfur vacancies, which severely degrade the performance of devices. This work demonstrates a concise and effective method for direct growth of high quality monolayer MoS2 by using SiO2/Si substrates pretreated with sulfur vapor. The MoS2 monolayer obtained using this method shows about 20 times PL intensity enhancement and a much narrower PL peak width than that grown on untreated substrates. Detailed characterization studies reveal that MoS2 grown on sulfur vapor pretreated SiO2/Si substrates has a much lower density of sulfur vacancies. The synthesis of monolayer MoS2 with high optical quality and low defect concentration is critical for both fundamental physics studies and potential practical device applications in the atomically thin limit.

Precise Layer Control of MoTe2 by Ozone Treatment.

Transition metal dichalcogenides (TMDCs) demonstrate great potential in numerous applications. However, these applications require a precise control of layer thickness at the atomic scale. In this work, we present an in-situ study of the self-limiting oxidation process in MoTe2 by ozone (O3) treatment. A precise layer-by-layer control of MoTe2 flakes can be achieved via multiple cycles of oxidation and wet etching. The thinned MoTe2 flakes exhibit comparable optical properties and film quality to the pristine exfoliated ones. Besides, an additional p-type doping is observed after O3 oxidation. Such a p-doping effect converts the device properties of MoTe2 from electron-dominated to hole-dominated ambipolar characteristics.

High-Performance WSe2 Photodetector Based on a Laser-Induced p-n Junction.

Two-dimensional heterojunctions exhibit many unique features in nanoelectronic and optoelectronic devices. However, heterojunction engineering requires a complicated alignment process and some defects are inevitably introduced during material preparation. In this work, a laser scanning technique is used to construct a lateral WSe2 p-n junction. The laser-scanned region shows p-type behavior, and the adjacent region is electrically n-doped with a proper gate voltage. The laser-oxidized product WOx is found to be responsible for this p-type doping. After laser scanning, WSe2 displays a change from ambipolar to unipolar p-type property. A significant photocurrent emerges at the p-n junction. Therefore, a self-powered WSe2 photodetector can be fabricated based on this junction, which presents a large photoswitching ratio of 106, a high photoresponsivity of 800 mA W-1, and a short photoresponse time with long-term stability and reproducibility. Therefore, this selective laser-doping method is prospective in future electronic applications.

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing.

Dopant-segregated source/drain contacts in a p-channel Schottky-barrier metal-oxide semiconductor field-effect transistor (SB-MOSFET) require further hole Schottky barrier height (SBH) regulation toward sub-0.1 eV levels to improve their competitiveness with conventional field-effect transistors. Because of the solubility limits of dopants in silicon, the requirements for effective hole SBH reduction with dopant segregation cannot be satisfied using mono-implantation. In this study, we demonstrate a potential solution for further SBH tuning by implementing the dual implantation of boron (B) and aluminum (Al) in combination with microwave annealing (MWA). By using such a method, not only has the lowest hole SBH ever with 0.07 eV in NiSi/n-Si contacts been realized, but also the annealing duration of MWA was sharply reduced to 60 s. Moreover, we investigated the SBH tuning mechanisms of the dual-implanted diodes with microwave annealing, including the dopant segregation, activation effect, and dual-barrier tuning effect of Al. With the selection of appropriate implantation conditions, the dual implantation of B and Al combined with the MWA technique shows promise for the fabrication of future p-channel SB-MOSFETs with a lower thermal budget.

Photovoltage Reversal in Organic Optoelectronic Devices with Insulator-Semiconductor Interfaces.

Photoinduced space-charges in organic optoelectronic devices, which are usually caused by poor mobility and charge injection imbalance, always limit the device performance. Here we demonstrate that photoinduced space-charge layers, accumulated at organic semiconductor-insulator interfaces, can also play a role for photocurrent generation. Photocurrent transients from organic devices, with insulator-semiconductor interfaces, were systematically studied by using the double-layer model with an equivalent circuit. Results indicated that the electric fields in photoinduced space-charge layers can be utilized for charge generation and can even induce a photovoltage reversal. Such an operational process of light harvesting would be promising for photoelectric conversion in organic devices.