Active and non-active large-area metal-molecules-metal junctions.

The study of charge transport processes through organic molecules by using molecular junctions has generated great attention in the last few years, partially triggered by the possibility of developing molecular electronic devices to be implemented somehow into current silicon-based technology. As experimental tools, a large variety of conceptually and geometrically different metal-molecule(s)-metal junctions has been proposed. While the intrinsic conductivity of a molecule is still elusive, parameters crucial for molecular electronics have been extracted by using a variety of junctions. Significantly, the results extracted from molecular junctions and those obtained by the kinetic approach in supramolecular D-B-A systems are complementary. For the sake of a practical discussion, a distinction is made between "active junctions" and "non-active junctions". Active junctions are those aimed at switching the electrical response by an external stimulus acting "in situ" to modify the electronic structure of the molecular system. Non-active junctions are those aimed at studying different conduction regimes by incorporating molecules of different electronic structures. Depending on their geometry, the junctions can incorporate different numbers of molecules. Large area molecular junctions present two main advantages: (1) a simpler assembly, by requiring less sophisticated fabrication and (2) a higher versatility, relative to single molecule junctions, towards potential applications in organic electronics. The present chapter focuses on the fabrication of a variety of large-area molecular junctions and summarizes and compares the experimental results.

Redox site-mediated charge transport in a Hg-SAM//Ru(NH(3))(6)(3+/2+)//SAM-Hg junction with a dynamic interelectrode separation: compatibility with redox cycling and electron hopping mechanisms.

This paper describes the formation and electrical properties of a new Hg-based metal-molecules-metal junction that incorporates charged redox sites into the space between the electrodes. The junction is formed by bringing into contact two mercury-drop electrodes whose surfaces are covered by COO(-)-terminated self-assembled monolayers (SAMs) and immersed in a basic aqueous solution of Ru(NH(3))(6)Cl(3). The electrical behavior of the junction, which is contacted at its edges by aqueous electrolyte solution, has been characterized electrochemically. This characterization shows that current flowing through the junction on the initial potential cycles is dominated by a redox-cycling mechanism and that the rates of electron transport can be controlled by controlling the potentials of the mercury electrodes with respect to the redox potential of the Ru(NH(3))(6)(3+/2+) couple. On repeated cycling of the potential across the junction, the current across it increases by as much as a factor of 40, and this increase is accompanied by a large (>300 mV) negative shift in the formal potential for the reduction of Ru(NH(3))(6)(3+). The most plausible rationalization of this behavior postulates a decrease in the size of the gap between the electrodes with cycling and a mechanism of conduction dominated by physical diffusion of Ru(NH(3))(6)(3+/2+) ions (at larger interelectrode spacing), with a possible contribution of electron hopping to charge transport (at smaller interelectrode spacing). In this rationalization, the negative shift in the formal potential plausibly reflects extrusion of the solution of electrolyte from the junction and an increase in the effective concentration of negatively charged species (surface-immobilized COO(-) groups) in the volume bounded by the electrodes. This junction has the characteristics required for use in screening and in exploratory work, involving nanogap electrochemical systems, and in mechanistic studies involving these systems. It does not have the stability needed for long-term technological applications.

Azobenzenes as light-controlled molecular electronic switches in nanoscale metal-molecule-metal junctions.

Conductance switching associated with the photoisomerization of azobenzene-based (Azo) molecules was observed in nanoscopic metal-molecule-metal junctions. The junctions were formed by using a conducting atomic force microscope (C-AFM) approach, where a metallic AFM tip was used to electrically contact a gold-supported Azo self-assembled monolayer. The measured 30-fold increase in conductance is consistent with the expected decrease in tunneling barrier length resulting from the conformational change of the Azo molecule.

Influence of defects on the electrical characteristics of mercury-drop junctions: self-assembled monolayers of n-alkanethiolates on rough and smooth silver.

This paper compares the structural and electrical characteristics of self-assembled monolayers (SAMs) of n-alkanethiolates, SCn (n = 10, 12, 14), on two types of silver substrates: one used as-deposited (AS-DEP) by an electron-beam evaporator, and one prepared using the method of template-stripping. Atomic force microscopy showed that the template-stripped (TS) silver surfaces were smoother and had larger grains than the AS-DEP surfaces, and reflectance-absorbance infrared spectroscopy showed that SAMs formed on TS substrates were more crystalline than SAMs formed on AS-DEP substrates. The range of current densities, J (A/cm2), measured through mercury-drop junctions incorporating a given SAM on AS-DEP silver was, on average, several orders of magnitude larger than the range of J measured through the same SAM on TS silver, and the AS-DEP junctions failed, on average, 3.5 times more often within five current density-voltage (J-V) scans than did TS junctions (depending on the length of the alkyl chains of the molecules in the SAM). The apparent log-normal distribution of J through the TS junctions suggests that, in these cases, it is the variability in the effective thickness of the insulating layer (the distance the electron travels between electrodes) that results in the uncertainty in J. The parameter describing the decay of current density with the thickness of the insulating layer, beta, was either 0.57 A-1 at V = +0.5 V (calculated using the log-mean of the distribution of values of J) or 0.64 A-1 (calculated using the peak of the distribution of values of J) for the TS junctions; the latter is probably the more accurate. The mechanisms of failure of the junctions, and the degree and sources of uncertainty in current density, are discussed with respect to a variety of defects that occur within Hg-drop junctions incorporating SAMs on silver.

Gating current flowing through molecules in metal-molecules-metal junctions.

We have assembled two junctions that incorporate redox sites between Hg electrodes by different interactions. In the first junction, Hg-SAM-R//R-SAM-Hg, the redox site (R) are covalently linked to each electrode in self assembled monolayers (SAM-R). In the second junction, Hg-SAM//R//SAM-Hg, the redox sites dissolved in solution are trapped by electrostatic interaction at the SAM formed at the electrodes. The current flowing through these junctions can be controlled by adjusting the potential applied at the electrodes with respect to the redox potential of the species by using an electrochemical system. The current flowing in these two junctions is mediated by the redox sites through different mechanisms. In particular, the current flowing through the Hg-SAM-R//R-SAM-Hg junction occurs through a self exchange mechanism between the redox sites organized at each electrode, while the current flowing through the Hg-SAM//R//SAM-Hg junction is dominated by a redox-cycling mechanism. The systems described here are easy to assemble, well-characterized, yield reproducible data and make it easy to modify the electrical properties of the junctions by changing the nature of the redox centres. For these characteristics they are well suited for collecting fundamental information relevant to the fabrication of molecular switches.