Dielectric Environment Sensitivity of Carbon Centers in Hexagonal Boron Nitride.

A key advantage of utilizing van-der-Waals (vdW) materials as defect-hosting platforms for quantum applications is the controllable proximity of the defect to the surface or the substrate allowing for improved light extraction, enhanced coupling with photonic elements, or more sensitive metrology. However, this aspect results in a significant challenge for defect identification and characterization, as the defect's properties depend on the the atomic environment. This study explores how the environment can influence the properties of carbon impurity centers in hexagonal boron nitride (hBN). It compares the optical and electronic properties of such defects between bulk-like and few-layer films, showing alteration of the zero-phonon line energies and their phonon sidebands, and enhancements of inhomogeneous broadenings. To disentangle the mechanisms responsible for these changes, including the atomic structure, electronic wavefunctions, and dielectric screening, it combines ab initio calculations with a quantum-embedding approach. By studying various carbon-based defects embedded in monolayer and bulk hBN, it demonstrates that the dominant effect of the change in the environment is the screening of density-density Coulomb interactions between the defect orbitals. The comparative analysis of experimental and theoretical findings paves the way for improved identification of defects in low-dimensional materials and the development of atomic scale sensors for dielectric environments.

An experimental and computational study on the material dispersion of 1-alkyl-3-methylimidazolium tetrafluoroborate ionic liquids.

The material dispersion of the [Ckmim][BF4] (k = 2, 3, 4, 6, 7, 8, 10) family of ionic liquids is measured at several temperatures over a broad spectral range from 300 nm to 1550 nm. The experimental curves are fitted to a modified three-resonance Sellmeier model to understand the effects of temperature and alkyl chain length on the dispersion behaviour. From the parameters of the fitting, we analyze the influence that the different constituents of these ionic liquids have on the dispersion behaviour. In addition, a semi-empirical approach combining simulated electronic polarizabilities and experimental densities for predicting the material dispersion is successfully tested by using a direct comparison with the experimental results. The limitations of this method are analyzed in terms of the molecular structure of the ionic liquids. The results of this work aim to increase our knowledge about how the molecular structure of an ionic liquid influences its material dispersion. Understanding this influence is fundamental to producing ionic liquids with tailored optical properties.

Isotopic Heft on the B1 l Silent Mode in Ultra-Narrow Gallium Nitride Nanowires.

Wurtzite semiconductor compounds have two silent modes, B1 l and B1 h. A silent mode is a vibrational mode that carries neither a dipole moment nor Raman polarizability. Thus, they are forbidden in both infrared reflectivity and Raman spectroscopy. Astonishingly, we detected the B1 l mode in high-quality, ultra-narrow GaN nanowires using resonant Raman scattering, although the B1 h was not observed, and there is no immediate explanation for this asymmetric finding. The Raman experiments were performed using several laser lines from 647 to 325 nm; the latter is a wavelength in which Raman becomes resonant. Actually, we observed the B1 l mode only in resonance, indicating that the appearance of this mode is related to Fröhlich electron-phonon interactions; i.e., a dipole moment emerging in the B1 l silent mode may not be present in the B1 h mode. To shed light onto the physical origin of these observations, we performed density functional theory calculations of the lattice dynamics in GaN. We performed a careful analysis of the different physical mechanisms that allow the forbidden mode to appear to explain the physics underlying the nonzero dipole moment in the B1 l mode, and the reason why this dipole moment is not present in the B1 h mode.

The fingerprint of Te-rich and stoichiometric Bi2Te3 nanowires by Raman spectroscopy.

We unambiguously show that the signature of Te-rich bismuth telluride is the appearance of three new peaks in the Raman spectra of Bi2Te3, located at 88, 117 and 137 cm(-1). For this purpose, we have grown stoichiometric Bi2Te3 nanowires as well as Te-rich nanowires. The absence of these peaks in stoichiometric nanowires, even in those with the smallest diameter, shows that they are not related to confinement effects or the lack of inversion symmetry, as stated in the literature, but to the existence of Te clusters. These Te clusters have been found in non-stoichiometric samples by high resolution electron microscopy, while they are absent in stoichiometric samples. The Raman spectra of the latter corresponds to the one for bulk Bi2Te3. The intensity of these Raman peaks are clearly correlated to the Te content. In order to ensure statistically meaningful results, we have investigated several regions from every sample.

Unraveling Thermal Transport Properties of MoTe2 Thin Films Using the Optothermal Raman Technique.

Understanding phonon transport and thermal conductivity of layered materials is not only critical for thermal management and thermoelectric energy conversion but also essential for developing future optoelectronic devices. Optothermal Raman characterization has been a key method to identify the properties of layered materials, especially transition-metal dichalcogenides. This work investigates the thermal properties of suspended and supported MoTe2 thin films using the optothermal Raman technique. We also report the investigation of the interfacial thermal conductance between the MoTe2 crystal and the silicon substrate. To extract the thermal conductivity of the samples, temperature- and power-dependent measurements of the in-plane E2g1 and out-of-plane A1g optical phonon modes were performed. The results show remarkably low in-plane thermal conductivities at room temperature, at around 5.16 ± 0.24 W/m·K and 3.72 ± 0.26 W/m·K for the E2g1 and the A1g modes, respectively, for the 17 nm thick sample. These results provide valuable input for the design of electronic and thermal MoTe2-based devices where thermal management is vital.

Adaptation of a Standard Method for Water Absorption Testing of Stone Materials: The Case of a Hydrophilic Protective Coating.

The historical stone heritage that we inherit must be passed on to future generations, not only in the same conditions that we found it but, if possible, in better ones. Construction also demands better and more durable materials, often stone. The protection of these materials requires knowledge of the types of rocks and their physical properties. The characterization of these properties is often standardized to ensure the quality and reproducibility of the protocols. These must be approved by entities whose purpose is to improve the quality and competitiveness of companies and to protect the environment. Standardized water absorption tests could be envisaged to test the effectiveness of certain coatings in protecting natural stone against water penetration, but we found that some steps of these protocols neglect any surface modification of the stones, and hence may not be completely effective when a hydrophilic protective coating (i.e., graphene oxide) is present. In this work, we analyze the UNE 13755/2008 standard for water absorption and propose alternative steps to adapt the norm for use with coated stones. The properties of coated stones may invalidate the interpretation of the results if the standard protocol is applied as is, so here we pay special attention to the characteristics of the coating applied, the type of water used for the test, the materials used, and the intrinsic heterogeneity of the specimens.

Manufacturing Te/PEDOT Films for Thermoelectric Applications.

In this work, flexible Te films have been synthesized by electrochemical deposition using PEDOT [poly(3,4-ethylenedioxythiophene)] nanofilms as working electrodes. The Te electrodeposition time was varied to find the best thermoelectric properties of the Te/PEDOT double layers. To show the high quality of the Te films grown on PEDOT, the samples were analyzed by Raman spectroscopy, showing the three Raman active modes of Te: E1, A1, and E2. The X-ray diffraction spectra also confirmed the presence of crystalline Te on top of the PEDOT films. The morphology of the Te/PEDOT films was studied using scanning electron microscopy, showing a homogeneous distribution of Te along the film. Also an atomic force microscope was used to analyze the quality of the Te surface. Finally, the electrical conductivity and the Seebeck coefficient of the Te/PEDOT films were measured as a function of the Te deposition time. The films showed an excellent thermoelectric behavior, giving a maximum power factor of about 320 ± 16 µW m-1 K-2 after 2.5 h of Te electrochemical deposition, a value larger than that reported for thin films of Te. Qualitative arguments to explain this behavior are given in the discussion.