Monitoring Soil and Ambient Parameters in the IoT Precision Agriculture Scenario: An Original Modeling Approach Dedicated to Low-Cost Soil Water Content Sensors.

A low power wireless sensor network based on LoRaWAN protocol was designed with a focus on the IoT low-cost Precision Agriculture applications, such as greenhouse sensing and actuation. All subsystems used in this research are designed by using commercial components and free or open-source software libraries. The whole system was implemented to demonstrate the feasibility of a modular system built with cheap off-the-shelf components, including sensors. The experimental outputs were collected and stored in a database managed by a virtual machine running in a cloud service. The collected data can be visualized in real time by the user with a graphical interface. The reliability of the whole system was proven during a continued experiment with two natural soils, Loamy Sand and Silty Loam. Regarding soil parameters, the system performance has been compared with that of a reference sensor from Sentek. Measurements highlighted a good agreement for the temperature within the supposed accuracy of the adopted sensors and a non-constant sensitivity for the low-cost volumetric water contents (VWC) sensor. Finally, for the low-cost VWC sensor we implemented a novel procedure to optimize the parameters of the non-linear fitting equation correlating its analog voltage output with the reference VWC.

Characterization of Low-Cost Capacitive Soil Moisture Sensors for IoT Networks.

The rapid development and wide application of the IoT (Internet of Things) has pushed toward the improvement of current practices in greenhouse technology and agriculture in general, through automation and informatization. The experimental and accurate determination of soil moisture is a matter of great importance in different scientific fields, such as agronomy, soil physics, geology, hydraulics, and soil mechanics. This paper focuses on the experimental characterization of a commercial low-cost "capacitive" coplanar soil moisture sensor that can be housed in distributed nodes for IoT applications. It is shown that at least for a well-defined type of soil with a constant solid matter to volume ratio, this type of capacitive sensor yields a reliable relationship between output voltage and gravimetric water content.

Numerical simulation of ISFET structures for biosensing devices with TCAD tools.

BACKGROUND: Ion Sensitive Field Effect Transistors (ISFETs) are one of the primitive structures for the fabrication of biosensors (BioFETs). Aiming at the optimization of the design and fabrication processes of BioFETs, the correlation between technological parameters and device electrical response can be obtained by means of an electrical device-level simulation. In this work we present a numerical simulation approach to the study of ISFET structures for bio-sensing devices (BioFET) using Synopsys Sentaurus Technology Computer-Aided Design (TCAD) tools. METHODS: The properties of a custom-defined material were modified in order to reproduce the electrolyte behavior. In particular, the parameters of an intrinsic semiconductor material have been set in order to reproduce an electrolyte solution. RESULTS: The electrostatic behaviour (transfer characteristics) of a general BioFET structure has been simulated when the captured target number increases from 1 to 10. The ID current as a function of the VDS voltage for different positions of a single charged block and for different values of the reference electrode have been calculated. CONCLUSIONS: We presented a numerical simulation approach to the study of Ion-Sensitive Field Effect Transistor (ISFET) structures for biosensing devices (BioFETs) using the Synopsys Sentaurus Technology Computer-Aided Design (TCAD) tools. A powerful framework for the design and optimization of biosensor has been devised, thus helping in reducing technology development time and cost. The main finding of the analysis of a general reference BioFET shows that there is no linear relationship between the number of charges and the current modulation. Actually, there is a strong position dependent effect: targets localized near the source region are most effective with respect to targets localized near the drain region. In general, even randomly distributed targets are more efficient with respect to locally grouped targets on the current modulation. Moreover, for the device at hand, a small positive biasing of the electrolyte solution, providing that the transistor goes on, will result in a greater enhancement of the current levels, still retaining a good sensitivity but greatly simplifying the operations of a real device.

High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices.

In this paper, by means of high-resolution photoemission, soft X-ray absorption and atomic force microscopy, we investigate, for the first time, the mechanisms of damaging, induced by neutron source, and recovering (after annealing) of p-i-n detector devices based on hydrogenated amorphous silicon (a-Si:H). This investigation will be performed by mean of high-resolution photoemission, soft X-Ray absorption and atomic force microscopy. Due to dangling bonds, the amorphous silicon is a highly defective material. However, by hydrogenation it is possible to reduce the density of the defect by several orders of magnitude, using hydrogenation and this will allow its usage in radiation detector devices. The investigation of the damage induced by exposure to high energy irradiation and its microscopic origin is fundamental since the amount of defects determine the electronic properties of the a-Si:H. The comparison of the spectroscopic results on bare and irradiated samples shows an increased degree of disorder and a strong reduction of the Si-H bonds after irradiation. After annealing we observe a partial recovering of the Si-H bonds, reducing the disorder in the Si (possibly due to the lowering of the radiation-induced dangling bonds). Moreover, effects in the uppermost coating are also observed by spectroscopies.

Layered distribution of charge carriers in organic thin film transistors.

Drain-source current in organic thin-film transistors has been monitored in situ and in real time during the deposition of pentacene. The current starts to flow when percolation of the first monolayer (ML) occurs and, depending on the deposition rate, saturates at a coverage in the range 2-7 MLs. The number of active layers contributing to the current and the spatial distribution of charge carriers are modulated by the growth mode. The thickness of the accumulation layer, represented by an effective Debye length, scales as the morphological correlation length. These results show that the effective Debye length is not just a material parameter, but depends on the multiscale morphology. Earlier controversial results can be unified within this framework.