Stress Relaxation and Grain Growth Behaviors of (111)-Preferred Nanotwinned Copper during Annealing.

Highly (111)-oriented nanotwinned Cu (nt-Cu) films were fabricated on silicon wafers for thermal-stress characterization. We tailored the microstructural features (grain scale and orientation) of the films by tuning the electroplating parameters. The films were heat-treated and the relaxation behaviors of thermal stresses in the films were explored using a bending beam system. Focused ion beam (FIB) and electron back-scattered diffraction (EBSD) were then employed to characterize the transformations of the microstructure, grain size, and orientation degree of the films. The results indicated that the degree of (111)-preferred orientation and grain size significantly decrease with increasing the current density. The nt-Cu films with a higher degree of (111)-preferred orientation and larger grains exhibit the slower rates of stress relaxation. The film with larger grains possesses a smaller grain boundary area; thus, the grain boundary diffusion for the thermal-stress release is suppressed. In addition, the induced tensile stress in the films with larger grains is smaller leading to the difference in microstructural changes under annealing.

High-Bonding-Strength Polyimide Films Achieved via Thermal Management and Surface Activation.

In this study, thermal and argon (Ar) plasma/wetting treatments were combined to enhance the bonding strength of polyimide (PI) films. Attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FTIR) was used to analyze the changes in the PI imidization degrees. The contact angles of the PI films were also measured. The results show that the contact angles of the fully cured PI films markedly decreased from 78.54° to 26.05° after the Ar plasma treatments. X-ray photoelectron spectroscopy (XPS) analysis was also conducted on the PI surfaces. We found that the intensities of the C-OH and C-N-H bonds increased from 0% to 13% and 29% to 57%, respectively, after Ar plasma activation. Such increases in the C-OH and C-N-H intensities could be attributed to the generation of dangling bonds and the breakage of the imide ring or polymer long chains. Shear tests were also conducted to characterize the bonding strength of the PI films, which, after being treated with the appropriate parameters of temperature, plasma power, and wetting droplets, was found to be excellent at greater than 35.3 MPa.

Failures of Cu-Cu Joints under Temperature Cycling Tests.

In this study, the failure mechanisms of Cu-Cu joints under thermal cycling were investigated. Two structures of dielectrics (PBO/underfill/PBO and SiO2) were employed to seal the joints. Stress gradients induced in the joints with the different dielectrics were simulated using a finite element method (FEM) and correlated with experimental observations. We found that interfacial voids were forced to move in the direction from high stress regions to low stress ones. The locations of migrated voids varied with the dielectric structures. Under thermal cycling, such voids were likely to move forward to the regions with a small stress change. They relocated and merged with their neighboring voids to lower the interfacial energy.

Enhancement of fatigue resistance by recrystallization and grain growth to eliminate bonding interfaces in Cu-Cu joints.

Cu-Cu joints have been adopted for ultra-high density of packaging for high-end devices. However, cracks may form and propagate along the bonding interfaces during fatigue tests. In this study, Cu-Cu joints were fabricated at 300 °C by bonding 〈111〉-oriented nanotwinned Cu microbumps with 30 µm in diameter. After temperature cycling tests (TCTs) for 1000 cycles, cracks were observed to propagate along the original bonding interface. However, with additional 300 °C-1 h annealing, recrystallization and grain growth took place in the joints and thus the bonding interfaces were eliminated. The fatigue resistance of the Cu-Cu joints is enhanced significantly. Failure analysis shows that cracks propagation was retarded in the Cu joints without the original bonding interface, and the electrical resistance of the joints did not increase even after 1000 cycles of TCT. Finite element analysis was carried to simulate the stress distribution during the TCTs. The results can be correlated to the failure mechanism observed by experimental failure analysis.

Effect of Tin Grain Orientation on Electromigration-Induced Dissolution of Ni Metallization in SnAg Solder Joints.

In this study, symmetrical solder joints (Cu/Ni/SnAg2.3/Ni/Cu) were fabricated. They were electromigration (EM)-stressed at high (8 × 104 A/cm2) or low (1.6 × 104 A/cm2) current densities. Failures in the solder joints with different grain orientations under EM stressing were then characterized. Results show that Ni under-bump-metallurgy (UBM) was quickly dissolved into the solder joints possessing low angles between Sn c-axis and electron direction and massive NiCuSn intermetallic compounds formed in the Sn matrix. The diffusion rate of Ni increased with decreasing orientation grain angle. A theoretical model was also established to analyze the consumption rate of Ni UBM. Good agreement between the modeling and experimental results was obtained. Additionally, we found that voids were more likely to form in the solder joints under high EM stressing.

Artificial intelligence deep learning for 3D IC reliability prediction.

Three-dimensional integrated circuit (3D IC) technologies have been receiving much attention recently due to the near-ending of Moore's law of minimization in 2D IC. However, the reliability of 3D IC, which is greatly influenced by voids and failure in interconnects during the fabrication processes, typically requires slow testing and relies on human's judgement. Thus, the growing demand for 3D IC has generated considerable attention on the importance of reliability analysis and failure prediction. This research conducts 3D X-ray tomographic images combining with AI deep learning based on a convolutional neural network (CNN) for non-destructive analysis of solder interconnects. By training the AI machine using a reliable database of collected images, the AI can quickly detect and predict the interconnect operational faults of solder joints with an accuracy of up to 89.9% based on non-destructive 3D X-ray tomographic images. The important features which determine the "Good" or "Failure" condition for a reflowed microbump, such as area loss percentage at the middle cross-section, are also revealed.

Low-Temperature Cu/SiO2 Hybrid Bonding with Low Contact Resistance Using (111)-Oriented Cu Surfaces.

We adopted (111)-oriented Cu with high surface diffusivity to achieve low-temperature and low-pressure Cu/SiO2 hybrid bonding. Electroplating was employed to fabricate arrays of Cu vias with 78% (111) surface grains. The bonding temperature can be lowered to 200 °C, and the pressure is as low as 1.06 MPa. The bonding process can be accomplished by a 12-inch wafer-to-wafer scheme. The measured specific contact resistance is 1.2 × 10-9 Ω·cm2, which is the lowest value reported in related literature for Cu-Cu joints bonded below 300 °C. The joints possess excellent thermal stability up to 375 °C. The bonding mechanism is also presented to provide more understanding on hybrid bonding.

Failure Mechanisms of Cu-Cu Bumps under Thermal Cycling.

The failure mechanisms of Cu-Cu bumps under thermal cycling test (TCT) were investigated. The resistance change of Cu-Cu bumps in chip corners was less than 20% after 1000 thermal cycles. Many cracks were found at the center of the bonding interface, assumed to be a result of weak grain boundaries. Finite element analysis (FEA) was performed to simulate the stress distribution under thermal cycling. The results show that the maximum stress was located close to the Cu redistribution lines (RDLs). With the TiW adhesion layer between the Cu-Cu bumps and RDLs, the bonding strength was strong enough to sustain the thermal stress. Additionally, the middle of the Cu-Cu bumps was subjected to tension. Some triple junctions with zig-zag grain boundaries after TCT were observed. From the pre-existing tiny voids at the bonding interface, cracks might initiate and propagate along the weak bonding interface. In order to avoid such failures, a postannealing bonding process was adopted to completely eliminate the bonding interface of Cu-Cu bumps. This study delivers a deep understanding of the thermal cycling reliability of Cu-Cu hybrid joints.

Effect of Bonding Strength on Electromigration Failure in Cu-Cu Bumps.

In microelectronic packaging technology for three-dimensional integrated circuits (3D ICs), Cu-to-Cu direct bonding appears to be the solution to solve the problems of Joule heating and electromigration (EM) in solder microbumps under 10 µm in diameter. However, EM will occur in Cu-Cu bumps when the current density is over 106 A/cm2. The surface, grain boundary, and the interface between the Cu and TiW adhesion layer are the three major diffusion paths in EM tests, and which one may lead to early failure is of interest. This study showed that bonding strength affects the outcome. First, if the bonding strength is not strong enough to sustain the thermal mismatch of materials during EM tests, the bonding interface will fracture and lead to an open circuit of early failure. Second, if the bonding strength can sustain the bonding structure, voids will form at the passivation contact area between the Cu-Cu bump and redistribution layer (RDL) due to current crowding. When the void grows along the passivation interface and separates the Cu-Cu bump and RDL, an open circuit can occur, especially when the current density and temperature are severe. Third, under excellent bonding, when the voids at the contact area between the Cu-Cu bump and RDL do not merge together, the EM lifetime can be more than 5000 h.