Unidirectional edge states in topological honeycomb-lattice membrane photonic crystals.

Photonic analogs of electronic systems with topologically non-trivial behavior such as unidirectional scatter-free propagation has tremendous potential for transforming photonic systems. Like in electronics topological behavior can be observed in photonics for systems either preserving time-reversal (TR) symmetry or explicitly breaking it. TR symmetry breaking requires magneto-optic photonics crystals (PC) or generation of synthetic gauge fields. For on-chip photonics that operate at optical frequencies both are quite challenging because of poor magneto-optic response of materials or substantial nanofabrication challenges in generating synthetic gauge fields. A recent work by Ma, et al. [Phys. Rev. Lett.114, 223901 (2015)] based on preserving pseudo TR symmetry offers a promising design scheme for observing unidirectional edge states in a modified honeycomb photonic crystal (PC) lattice of circular rods that offers encouraging alternatives. Here we propose through bandstructure calculations the inverse system of modified honeycomb PC of circular holes in a dielectric membrane which is more attractive from fabrication standpoint for on-chip applications. We observe trivial and non-trivial bandgaps as well as unidirectional edge states of opposite helicity propagating in opposite directions at the interface of a trivial and non-trivial PC structures. Around 1550nm operating wavelength ~55nm of bandwidth is possible for practicable values of design parameters (lattice constant, hole radii, membrane thickness, scaling factor etc.) and robust to reasonable variations in those parameters.

Polarization-Independent Silicon Metadevices for Efficient Optical Wavefront Control.

We experimentally demonstrate a functional silicon metadevice at telecom wavelengths that can efficiently control the wavefront of optical beams by imprinting a spatially varying transmittance phase independent of the polarization of the incident beam. Near-unity transmittance efficiency and close to 0-2π phase coverage are enabled by utilizing the localized electric and magnetic Mie-type resonances of low-loss silicon nanoparticles tailored to behave as electromagnetically dual-symmetric scatterers. We apply this concept to realize a metadevice that converts a Gaussian beam into a vortex beam. The required spatial distribution of transmittance phases is achieved by a variation of the lattice spacing as a single geometric control parameter.

Quantum-size-controlled photoelectrochemical fabrication of epitaxial InGaN quantum dots.

We demonstrate a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10 nm size regime: quantum-size-controlled photoelectrochemical (QSC-PEC) etching. We show that quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and that the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength. Low-temperature photoluminescence from ensembles of such QDs have peak wavelengths that can be tunably blue shifted by 35 nm (from 440 to 405 nm) and have line widths that narrow by 3 times (from 19 to 6 nm).

Near-infrared surface plasmon polariton dispersion control with hyperbolic metamaterials.

We demonstrate experimentally signatures and dispersion control of surface plasmon polaritons from 1 to 1.8 µm using periodic multilayer metallo-dielectric hyperbolic metamaterials. The fabricated structures are comprised of smooth films with very low metal filling factor. The measured dispersion properties of these hyperbolic metamaterials agree well with calculations using transfer matrix, finite-difference time-domain, and effective medium approximation methods despite using only 2.5 periods. The enhancement factor in the local photonic density of states from the studied samples in the near-infrared wavelength region is determined to be 2.5-3.5. Development of this type of metamaterial is relevant to sub-wavelength imaging, spontaneous emission and thermophotovoltaic applications.

Gallium nitride based logpile photonic crystals.

We demonstrate a nine-layer logpile three-dimensional photonic crystal (3DPC) composed of single crystalline gallium nitride (GaN) nanorods, ∼100 nm in size with lattice constants of 260, 280, and 300 nm with photonic band gap in the visible region. This unique GaN structure is created through a combined approach of a layer-by-layer template fabrication technique and selective metal organic chemical vapor deposition (MOCVD). These GaN 3DPC exhibit a stacking direction band gap characterized by strong optical reflectance between 380 and 500 nm. By introducing a "line-defect" cavity in the fifth (middle) layer of the 3DPC, a localized transmission mode with a quality factor of 25-30 is also observed within the photonic band gap. The realization of a group III nitride 3DPC with uniform features and a band gap at wavelengths in the visible region is an important step toward realizing complete control of the electromagnetic environment for group III nitride based optoelectronic devices.

Nano-lithographically fabricated titanium dioxide based visible frequency three dimensional gap photonic crystal.

Photonic crystals (PC) have emerged as important types of structures for light manipulation. Ultimate control of light is possible by creating PCs with a complete three dimensional (3D) gap [1, 2]. This has proven to be a considerable challenge in the visible and ultraviolet frequencies mainly due to complications in integrating transparent, high refractive index (n) materials with fabrication techniques to create ~ 100nm features with long range translational order. In this letter, we demonstrate a nano-lithography approach based on a multilevel electron beam direct write and physical vapor deposition, to fabricate four-layer titania woodpile PCs that potentially exhibit complete 3D gap at visible wavelengths. We achieved a short wavelength bandedge of 525nm with a 300nm lattice constant PC. Due to the nanoscale precision and capability for defect control, the nanolithography approach represents an important step toward novel visible photonic devices for lighting, lasers, sensing and biophotonics.

Multi-colour nanowire photonic crystal laser pixels.

Emerging applications such as solid-state lighting and display technologies require micro-scale vertically emitting lasers with controllable distinct lasing wavelengths and broad wavelength tunability arranged in desired geometrical patterns to form "super-pixels". Conventional edge-emitting lasers and current surface-emitting lasers that require abrupt changes in semiconductor bandgaps or cavity length are not a viable solution. Here, we successfully address these challenges by introducing a new paradigm that extends the laser tuning range additively by employing multiple monolithically grown gain sections each with a different emission centre wavelength. We demonstrate this using broad gain-bandwidth III-nitride multiple quantum well (MQW) heterostructures and a novel top-down nanowire photonic crystal nanofabrication. We obtain single-mode lasing in the blue-violet spectral region with a remarkable 60 nm of tuning (or 16% of the nominal centre wavelength) that is determined purely by the photonic crystal geometry. This approach can be extended to cover the entire visible spectrum.

Silicon-based near-visible logpile photonic crystal.

A nanocavity structure is embedded inside a silicon logpile photonic crystal that demonstrates tunable absorption behavior at near visible wavelengths well beyond the absorption edge of silicon. This is due to silicon's indirect bandgap resulting in a relatively slow increase in the absorption of silicon with decreasing wavelength. Our results open up the possibility of utilizing the wide, complete three dimensional photonic gap enabled by the large refractive index of silicon to create three dimensional photonic crystal based devices well into the visible regime.