Detalhe da pesquisa
1.
Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles.
Nanotechnology
; 2024 Jun 11.
Artigo
em Inglês
| MEDLINE | ID: mdl-38861940
2.
Impact of the Shadowing Effect on the Crystal Structure of Patterned Self-Catalyzed GaAs Nanowires.
Nano Lett
; 19(7): 4263-4271, 2019 Jul 10.
Artigo
em Inglês
| MEDLINE | ID: mdl-31150261
3.
Correlation of electrical and structural properties of single as-grown GaAs nanowires on Si (111) substrates.
Nano Lett
; 15(2): 981-9, 2015 Feb 11.
Artigo
em Inglês
| MEDLINE | ID: mdl-25631459
4.
Coaxial multishell (In,Ga)As/GaAs nanowires for near-infrared emission on Si substrates.
Nano Lett
; 14(5): 2604-9, 2014 May 14.
Artigo
em Inglês
| MEDLINE | ID: mdl-24678901
5.
Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot.
Nanotechnology
; 20(24): 245702, 2009 Jun 17.
Artigo
em Inglês
| MEDLINE | ID: mdl-19471082
6.
Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation.
Nanoscale Adv
; 1(5): 1893-1900, 2019 May 15.
Artigo
em Inglês
| MEDLINE | ID: mdl-36134215
7.
Electroluminescence and current-voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble.
Beilstein J Nanotechnol
; 10: 1177-1187, 2019.
Artigo
em Inglês
| MEDLINE | ID: mdl-31293855
8.
Threefold rotational symmetry in hexagonally shaped core-shell (In,Ga)As/GaAs nanowires revealed by coherent X-ray diffraction imaging.
J Appl Crystallogr
; 50(Pt 3): 673-680, 2017 Jun 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-28656032
9.
Top-gated silicon nanowire transistors in a single fabrication step.
ACS Nano
; 3(6): 1587-93, 2009 Jun 23.
Artigo
em Inglês
| MEDLINE | ID: mdl-19425540
10.
Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot.
Phys Rev Lett
; 99(19): 197403, 2007 Nov 09.
Artigo
em Inglês
| MEDLINE | ID: mdl-18233112