Highly efficient near-infrared light-emitting diodes by using type-II CdTe/CdSe core/shell quantum dots as a phosphor.

In this paper, we present an innovative method for the synthesis of CdTe/CdSe type-II core/shell structure quantum dots (QDs) using 'greener' chemicals. The PL of CdTe/CdSe type-II core/shell structure QDs ranges from 600 to 820 nm, and the as-synthesized core/shell structures show narrow size distributions and stable and high quantum yields (50­75%). Highly efficient near-infrared light-emitting diodes (LEDs) have been demonstrated by employing the CdTe/CdSe type-II core/shell QDs as emitters. The devices fabricated based on these type-II core/shell QDs show color-saturated near-infrared emission from the QD layers, a low turn-on voltage of 1.55 V, an external quantum efficiency (EQE) of 1.59%, and a current density and maximum radiant emittance of 2.1 × 10(3) mA cm−2 and 17.7 mW cm−2 at 8 V; it is the first report to use type-II core/shell QDs as near-infrared emitters and these results may offer a practicable platform for the realization of near-infrared QD-based light-emitting diodes, night-vision-readable displays, and friend/foe identification system.

Full color-tunable vertically stacked quantum dot light emitting diodes for next-generation displays and lighting.

We report solution-processed color tunable vertically stacked electroluminescent red, green, and blue quantum dot light emitting diodes (QLEDs). These QLEDs can be independently driven to produce all primary, secondary, and white lights. We have fabricated the device by chemical and electrical isolation of each QLED with transparent polymers and by the use of transparent electrodes. These stacked QLEDs can be used for next-generation display and lighting applications that need high pixel density along with quantum dots' intrinsic benefits such as low turn-on voltage, color purity, and solution processability.

High efficiency quantum dot light emitting diodes from positive aging.

Colloidal quantum dot-polymer hybrid light emitting diodes (QLEDs) that exhibit external quantum efficiencies >12% for all three primary colors (21% from green) have been demonstrated. These high efficiencies result in part from a positive aging effect reported here for the first time, where positive aging means the efficiency of the QLED increased with time. We have achieved 470 h operational life time (T90) at 2550 nits for red QLEDs. At longer times, negative aging phenomena lead to lower luminance and limit the lifetime of the QLEDs. It is concluded that we have reasonable control over the efficiency of QLEDs. The next challenge is to achieve lifetimes sufficiently long for all three primary colors for applications such as in television and illumination.

Highly efficient blue-green quantum dot light-emitting diodes using stable low-cadmium quaternary-alloy ZnCdSSe/ZnS core/shell nanocrystals.

High-quality blue-green emitting ZnxCd(1-x)S(1-y)Se(y)/ZnS core/shell quantum dots (QDs) have been synthesized by a phosphine-free method. The quantum yields of as-synthesized ZnxCd(1-x)S(1-y)Se(y)/ZnS core/shell QDs can reach 50-75% with emissions between 450 and 550 nm. The emissions of such core/shell QDs are not susceptible to ligand loss through the photostability test. Blue-green light-emitting diodes (LEDs) based on the low-cadmium ZnxCd(1-x)S(1-y)Se(y)/ZnS core/shell QDs have been successfully demonstrated. Composite films of poly[9,9-dioctylfluorene-co-N-[4-(3-methylpropyl)]-diphenylamine] (TFB) and ZnO nanoparticle layers were chosen as the hole-transporting and the electron-transporting layers, respectively. Highly bright blue-green QD-based light-emitting devices (QD-LEDs) showing maximum luminance up to 10000 cd/m(2), in particular, the blue QD-LEDs show an unprecedentedly high brightness over 4700 cd/m(2) and peak external quantum efficiency (EQE) of 0.8%, which is the highest value ever reported. These results signify a remarkable progress in QD-LEDs and offer a practicable platform for the realization of QD-based blue-green display and lighting.

Efficient and bright colloidal quantum dot light-emitting diodes via controlling the shell thickness of quantum dots.

In this paper, we use a simple device architecture based on solution-processed ZnO nanoparticles (NPs) as the electron injection/transport layer and bilayer structure of poly(ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)/poly[9,9-dioctylfluorene-co-N-[4-(3-methylpropyl)]-diphenylamine] (TFB) as the hole injection/transport layer to assess the effect of shell thickness on the properties of quantum-dot-based light emitting diodes (QD-LEDs), comprising CdSe/CdS/ZnS core-shell QDs as the emitting layer. QDs with varying shell thickness were assessed to determine the best option of shell thickness, and the best improvement in device performance was observed when the shell thickness was 2.1 nm. Thereafter, different emissions of QDs, but with optimized same shell thickness (∼2.1 nm), were selected as emitters to be fabricated into same structured QD-LEDs. Highly bright orange-red and green QD-LEDs with peak luminances up to ∼30 000 and ∼52 000 cd m(-2), and power efficiencies of 16 and 19.7 lm W(-1), respectively, were demonstrated successfully. These results may demonstrate a striking basic prototype for the commercialization of QD-based displays and solid-state lightings.