Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field.

We experimentally study the electronic spin transport in hexagonal BN encapsulated single layer graphene nonlocal spin valves. The use of top and bottom gates allows us to control the carrier density and the electric field independently. The spin relaxation times in our devices range up to 2 ns with spin relaxation lengths exceeding 12 µm even at room temperature. We obtain that the ratio of the spin relaxation time for spins pointing out-of-plane to spins in-plane is τ(⊥)/τ(||) ≈ 0.75 for zero applied perpendicular electric field. By tuning the electric field, this anisotropy changes to ≈ 0.65 at 0.7 V/nm, in agreement with an electric field tunable in-plane Rashba spin-orbit coupling.

Spin transport in high-quality suspended graphene devices.

We measure spin transport in high mobility suspended graphene (µ ≈ 10(5)cm(2)/(V s)), obtaining a (spin) diffusion coefficient of 0.1 m(2)/s and giving a lower bound on the spin relaxation time (τ(s) ≈ 150 ps) and spin relaxation length (λ(s) = 4.7 µm) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data.

Anisotropic spin relaxation in graphene.

Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the nonlocal geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle spin precession under a magnetic field B applied perpendicular to the graphene layer. Fields above 1.5 T force the magnetization direction of the ferromagnetic contacts to align to the field, allowing injection of spins perpendicular to the graphene plane. A comparison of the spin signals at B=0 and B=2 T shows a 20% decrease in spin relaxation time for spins perpendicular to the graphene layer compared to spins parallel to the layer. We analyze the results in terms of the different strengths of the spin-orbit effective fields in the in-plane and out-of-plane directions and discuss the role of the Elliott-Yafet and Dyakonov-Perel mechanisms for spin relaxation.

Electronic spin drift in graphene field-effect transistors.

We studied the drift of electron spins under an applied dc electric field in single layer graphene spin valves in a field-effect transport geometry at room temperature. In the metallic conduction regime (n approximately 3.5 x 10(16) m(-2)), for dc fields of about +/- 70 kV/m applied between the spin injector and spin detector, the spin valve signals are increased or decreased, depending on the direction of the dc field and the carrier type, by as much as +/- 50%. Sign reversal of the drift effect is observed when switching from hole to electron conduction. In the vicinity of the Dirac neutrality point the drift effect is strongly suppressed. The experiments are in quantitative agreement with a drift-diffusion model of spin transport.

c-Axis optical sum rule and a possible new collective mode in La2-xSrxCuO4.

We present the c-axis optical conductivity sigma(1c)(omega,T) of underdoped (x=0.12) and optimally doped (x=0.15) La2-xSrxCuO4 from 4 meV to 1.8 eV obtained by a combination of reflectivity and transmission spectra. In addition to the opening of the superconducting gap, we observe an increase of conductivity above the gap up to 270 meV with a maximal effect at about 120 meV. This may indicate a new collective mode at a surprisingly large energy scale. The Ferrell-Glover-Tinkham sum rule is violated for both doping levels. Although the relative value of the violation is much larger for the under-doped sample, the absolute increase of the low-frequency spectral weight, including that of the condensate, is higher in the optimally doped regime. Our results resemble in many respects the observations in YBa(2)Cu(3)O(7-delta).