Microwave AC Resonance Induced Phase Change in Sb2Te3 Nanowires.

Scaling information bits to ever smaller dimensions is a dominant drive for information technology (IT). Nanostructured phase change material emerges as a key player in the current green-IT endeavor with low power consumption, functional modularity, and promising scalability. In this work, we present the demonstration of microwave AC voltage induced phase change phenomenon at ∼3 GHz in single Sb2Te3 nanowires. The resistance change by a total of 6-7 orders of magnitude is evidenced by a transition from the crystalline metallic to the amorphous semiconducting phase, which is cross-examined by temperature dependent transport measurement and high-resolution electron microscopy analysis. This discovery could potentially tailor multistate information bit encoding and electrical addressability along a single nanowire, rendering technology advancement for neuro-inspired computing devices.

Nature of AX centers in antimony-doped cadmium telluride nanobelts.

Single crystalline p-type CdTe:Sb nanobelts were fabricated using an Au-catalyzed chemical vapor deposition method. Low carrier concentration and low mobility even at high Sb incorporation manifest compensation in the system. From cross examination of temperature-dependent charge transport and photoluminescence measurements, two major acceptor levels induced by Sb doping are determined: a shallow level attributed to substitutional Sb dopants without lattice relaxation and an associated deeper level resulted from large lattice relaxation-AX centers. Persistent photoconductivity and hysteresis photoconductance under the thermal cycle elucidate the nature of AX centers. This comprehensive investigation of the impurity levels in the material system is essential for the design and development of nanoelectronic devices based on the CdTe nanostructures.

Flux periodic oscillations and phase-coherent transport in GeTe nanowire-based devices.

Despite the fact that GeTe is known to be a very interesting material for applications in thermoelectrics and for phase-change memories, the knowledge on its low-temperature transport properties is only limited. We report on phase-coherent phenomena in the magnetotransport of GeTe nanowires. From universal conductance fluctuations measured on GeTe nanowires with Au contacts, a phase-coherence length of about 280 nm at 0.5 K is determined. The distinct phase-coherence is confirmed by the observation of Aharonov-Bohm type oscillations for parallel magnetic fields. We interpret the occurrence of these magnetic flux-periodic oscillations by the formation of a tubular hole accumulation layer. For Nb/GeTe-nanowire/Nb Josephson junctions we obtained a critical current of 0.2 µA at 0.4 K. By applying a perpendicular magnetic field the critical current decreases monotonously with increasing field, whereas in a parallel field the critical current oscillates with a period of the magnetic flux quantum confirming the presence of a tubular hole channel.

Spin-momentum locking induced non-local voltage in topological insulator nanowire.

The momentum and spin of charge carriers in the topological insulators are constrained to be perpendicular to each other due to the strong spin-orbit coupling. We have investigated this unique spin-momentum locking property in Sb2Te3 topological insulator nanowires by injecting spin-polarized electrons through magnetic tunnel junction electrodes. Non-local voltage measurements exhibit an asymmetry with respect to the magnetic field applied perpendicular to the nanowire channel, which is remarkably different from that of a non-local measurement in a channel that lacks spin-momentum locking. In stark contrast to conventional non-local spin valves, simultaneous reversal of magnetic moments of all magnetic contacts to the Sb2Te3 nanowire alters the non-local voltage. This unusual asymmetry is a clear signature of the spin-momentum locking in the Sb2Te3 nanowire surface states.

1D to 3D dimensional crossover in the superconducting transition of the quasi-one-dimensional carbide superconductor Sc3CoC4.

The transition metal carbide superconductor Sc(3)CoC(4) may represent a new benchmark system of quasi-one-dimensional (quasi-1D) superconducting behavior. We investigate the superconducting transition of a high-quality single crystalline sample by electrical transport experiments. Our data show that the superconductor goes through a complex dimensional crossover below the onset T(c) of 4.5 K. First, a quasi-1D fluctuating superconducting state with finite resistance forms in the [CoC(4)](∞) ribbons which are embedded in a Sc matrix in this material. At lower temperature, the transversal Josephson or proximity coupling of neighboring ribbons establishes a 3D bulk superconducting state. This dimensional crossover is very similar to Tl(2)Mo(6)Se(6), which for a long time has been regarded as the most appropriate model system of a quasi-1D superconductor. Sc(3)CoC(4) appears to be even more in the 1D limit than Tl(2)Mo(6)Se(6).

"Giant" enhancement of the upper critical field and fluctuations above the bulk Tc in superconducting ultrathin lead nanowire arrays.

We have produced ultrathin lead (Pb) nanowires in the 6 nm pores of SBA-15 mesoporous silica substrates by chemical vapor deposition. The nanowires form regular and dense arrays. We demonstrate that bulk Pb (a type-I superconductor below Tc = 7.2 K with a critical field of 800 Oe) can be tailored by nanostructuring to become a type-II superconductor with an upper critical field (Hc2) exceeding 15 T and signs of Cooper pairing 3-4 K above the bulk Tc. The material undergoes a crossover from a one-dimensional fluctuating superconducting state at high temperatures to three-dimensional long-range-ordered superconductivity in the low-temperature regime. We show with our data in an impressive way that superconductivity in elemental metals can be greatly enhanced by nanostructuring.