Sunlight activated long-lasting luminescence from Ba5Si8O21: Eu(2+),Dy(3+) phosphor.

Visible-light persistent phosphors are commonly used as self-sustained night vision and fluorescence labeling materials. From the inspiration of the structure of six-membered rings plane in Ba4(Si3O8)2, a similar structure of Ba5Si8O21 is expected that could exhibit more excellent phosphorescence property. In this Article, we report a novel visible long-lasting luminescence phosphor of Eu(2+)/Dy(3+) codoped Ba5Si8O21 for the first time. Ba5Si8O21:Eu(2+),Dy(3+) phosphor could be activated effectively by sunlight or even in severe weather conditions, which is mainly attributed to the broad excitation spectrum (200-455 nm) and highly responds to UV-A and violet-light in the solar spectrum. After activation, Ba5Si8O21:Eu(2+),Dy(3+) emits intense emission at 380-680 nm with persistent phosphorescence beyond 16 h. Moreover, it exhibits excellent and stable phosphorescence even in water, indicating that Ba5Si8O21:Eu(2+),Dy(3+) will be a all-weather material that can be effectively and repeatedly charged by natural daylight in all kinds of open-air environments. Furthermore, the quantum tunneling behavior was illustrated in the afterglow mechanism.

Seed-Assisted Growth of Methylammonium-Free Perovskite for Efficient Inverted Perovskite Solar Cells.

The traditional way to stabilize α-phase formamidinium lead triiodide (FAPbI3 ) perovskite often involves considerable additions of methylammonium (MA) and bromide into the perovskite lattice, leading to an enlarged bandgap and reduced thermal stability. This work shows a seed-assisted growth strategy to induce a bottom-up crystallization of MA-free perovskite, by introducing a small amount of α-CsPbBr3 /DMSO (5%) as seeds into the pristine FAPbI3 system. During the initial crystalization period, the typical hexagonal α-FAPbI3 crystals (containing α-CsPbBr3 seeds) are directly formed even at ambient temperature, as observed by laser scanning confocal microscopy. It indicates that these seeds can promote the formation and stabilization of α-FAPbI3 below the thermodynamic phase-transition temperature. After annealing not beyond 100 °C, CsPbBr3 seeds homogeneously diffused into the entire perovskite layer via an ions exchange process. This work demonstrates an efficiency of 22% with hysteresis-free inverted perovskite solar cells (PSCs), one of the highest performances for MA-free inverted PSCs. Despite absented passivation processes, open-circuit voltage is improved by 100 millivolts compared to the control devices with the same stoichiometry, and long-term operational stability retained 92% under continuous full sun illumination. Going MA-free and low-temperature processes are a new insight for compatibility with tandems or flexible PSCs.

Charge Injection and Electrical Response in Low-Temperature SnO2-Based Efficient Perovskite Solar Cells.

Defining low-temperature engineering protocols for efficient planar perovskite solar cell (PSC) preparation is important for fabrication simplification and low-cost production. In the present work, we have defined a low-temperature (123 °C) protocol for the preparation from a solution of SnO2 layers which are efficient for an application as an electron transporting layer (ETL) in PSCs. Thin, conformal, and transparent layers have been obtained. The related PSCs have shown best devices with a power conversion efficiency of 18.22% and low-hysteresis J- V curves (a hysteresis index of 6.7%). Charge injection has been thoroughly studied by photoluminescence decay measurements. The decay curves followed a biexponential function. The injection of holes into the spiro-OMeTAD layer was found very fast and is a no-limiting step. On the other side, the charge injection into the oxide ETLs depends on its structure and on the oxide. The time constant for the low-temperature SnO2 layers is close to that of the mesoporous benchmark layers with a fast (surface) and a slow (bulk) component at 11 and 129 ns with relative contributions calculated at 13% and 87%, respectively. The phenomena occurring at a longer time scale have been investigated by impedance spectroscopy. The SnO2 cell spectra showed no intermediate-frequency inductive loop. The very low frequency part of the spectra was characterized by the beginning of an arc of a circle at the origin of a very large resistance over a large applied potential range. This resistance, along with an intermediate-frequency resistance, has been assigned to a recombination resistance and explains the very large  Voc achievable with SnO2 PSCs. The existence of a capacitance at the intermediate frequency with a noticeable low value at about 0.2 mF·cm-2 is linked with the low hysteresis of the devices.