Photocatalytic decomposition of acrylonitrile with N-F codoped TiO2/SiO2 under simulant solar light irradiation.

The solid acid catalyst, N-F codoped TiO2/SiO2 composite oxide was prepared by a sol-gel method using NH4F as nitrogen and fluorine source. The prepared materials were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), UV-Visible diffuse reflectance spectroscopy (UV-Vis), ammonia adsorption and temperature-programmed desorption (NH3-TPD), in situ Fourier transform infrared spectroscopy (FT-IR) and N2 physical adsorption isotherm. The photocatalytic activity of the catalyst for acrylonitrile degradation was investigated under simulant solar irradiation. The results showed that strong Lewis and Brønsted acid sites appear on the surface of the sample after N-F doping. Systematic investigation showed that the highest photocatalytic activity for acrylonitrile degradation was obtained for samples calcined at 450°C with molar ratio (NH4F to Ti) of 0.8. The degradation ratio of 71.5% was achieved with the prepared catalyst after 6-min irradiation, demonstrating the effectiveness of photocatalytic degradation of acrylonitrile with N-F codoped TiO2/SiO2 composite oxide. The photocatalyst is promising for application under solar light irradiation. Moreover, the intermediates generated after irradiation were verified by gas chromatography-mass spectrometry (GC-MS) analysis and UV-Vis spectroscopy to be simple organic acids with lower toxicity, and the degradation pathway was also proposed for acrylonitrile degradation with the prepared catalyst.

Light-responsive self-strained organic semiconductor for large flexible OFET sensing array.

With the wide application of organic semiconductors (OSCs), researchers are now grappling with a new challenge: design and synthesize OSCs materials with specific functions to satisfy the requirements of high-performance semiconductor devices. Strain engineering is an effective method to improve the semiconductor material's carrier mobility, which is fundamentally originated from the rearrangement of the atomic packing model of materials under mechanic stress. Here, we design and synthesize a new OSC material named AZO-BTBT-8 based on high-mobility benzo[b]benzo[4,5]thieno[2,3-d]thiophene (BTBT) as the semiconductor backbone. Octane is employed to increase molecular flexibility and solubility, and azobenzene at the other end of the BTBT backbone provides photoisomerization properties and structural balance. Notably, the AZO-BTBT-8 photoisomerization leads to lattice strain in thin-film devices, where exceptional device performance enhancement is realized. On this basis, a large-scale flexible organic field-effect transistor (OFET) device array is fabricated and realizes high-resolution UV imaging with reversible light response.