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Polymorph engineering involves the manipulation of material properties through controlled structural modification and is a candidate technique for creating unique two-dimensional transition metal dichalcogenide (TMDC) nanodevices. Despite its promise, polymorph engineering of magnetic TMDC monolayers has not yet been demonstrated. Here we grow FeSe2 monolayers via molecular beam epitaxy and find that they have great promise for magnetic polymorph engineering. Using scanning tunneling microscopy (STM) and spectroscopy (STS), we find that FeSe2 monolayers predominantly display a 1T' structural polymorph at 5 K. Application of voltage pulses from an STM tip causes a local, reversible transition from the 1T' phase to the 1T phase. Density functional theory calculations suggest that this single-layer structural phase transition is accompanied by a magnetic transition from an antiferromagnetic to a ferromagnetic configuration. These results open new possibilities for creating functional magnetic devices with TMDC monolayers via polymorph engineering.
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Tip-enhanced photoluminescence (TRPL) is a powerful technique for spatially and spectrally probing local optical properties of 2-dimensional (2D) materials that are modulated by the local heterogeneities, revealing inaccessible dark states due to bright state overlap in conventional far-field microscopy at room temperature. While scattering-type near-field probes have shown the potential to selectively enhance and reveal dark exciton emission, their technical complexity and sensitivity can pose challenges under certain experimental conditions. Here, we present a highly reproducible and easy-to-fabricate near-field probe based on nanoimprint lithography and fiber-optic excitation and collection. The novel near-field measurement configuration provides an â¼3 orders of magnitude out-of-plane Purcell enhancement, diffraction-limited excitation spot, and subdiffraction hyperspectral imaging resolution (below 50 nm) of dark exciton emission. The effectiveness of this high spatial XD mapping technique was then demonstrated through reproducible hyperspectral mapping of oxidized sites and bubble areas.
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We investigate the electronic properties of a graphene and α-ruthenium trichloride (α-RuCl3) heterostructure using a combination of experimental techniques. α-RuCl3 is a Mott insulator and a Kitaev material. Its combination with graphene has gained increasing attention due to its potential applicability in novel optoelectronic devices. By using a combination of spatially resolved photoemission spectroscopy and low-energy electron microscopy, we are able to provide a direct visualization of the massive charge transfer from graphene to α-RuCl3, which can modify the electronic properties of both materials, leading to novel electronic phenomena at their interface. A measurement of the spatially resolved work function allows for a direct estimate of the interface dipole between graphene and α-RuCl3. Their strong coupling could lead to new ways of manipulating electronic properties of a two-dimensional heterojunction. Understanding the electronic properties of this structure is pivotal for designing next generation low-power optoelectronics devices.
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One-dimensional electron systems exhibit fundamentally different properties than higher-dimensional systems. For example, electron-electron interactions in one-dimensional electron systems have been predicted to induce Tomonaga-Luttinger liquid behaviour. Naturally occurring grain boundaries in single-layer transition metal dichalcogenides exhibit one-dimensional conducting channels that have been proposed to host Tomonaga-Luttinger liquids, but charge density wave physics has also been suggested to explain their behaviour. Clear identification of the electronic ground state of this system has been hampered by an inability to electrostatically gate such boundaries and tune their charge carrier concentration. Here we present a scanning tunnelling microscopy and spectroscopy study of gate-tunable mirror twin boundaries in single-layer 1H-MoSe2 devices. Gating enables scanning tunnelling microscopy and spectroscopy for different mirror twin boundary electron densities, thus allowing precise characterization of electron-electron interaction effects. Visualization of the resulting mirror twin boundary electronic structure allows unambiguous identification of collective density wave excitations having two velocities, in quantitative agreement with the spin-charge separation predicted by finite-length Tomonaga-Luttinger liquid theory.
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Scanning near-field optical microscopy (SNOM) is an important technique used to study the optical properties of material systems at the nanoscale. In previous work, we reported on the use of nanoimprinting to improve the reproducibility and throughput of near-field probes including complicated optical antenna structures such as the 'campanile' probe. However, precise control over the plasmonic gap size, which determines the near-field enhancement and spatial resolution, remains a challenge. Here, we present a novel approach to fabricating a sub-20â nm plasmonic gap in a near-field plasmonic probe through the controlled collapse of imprinted nanostructures using atomic layer deposition (ALD) coatings to define the gap width. The resulting ultranarrow gap at the apex of the probe provides a strong polarization-sensitive near-field optical response, which results in an enhancement of the optical transmission in a broad wavelength range from 620 to 820â nm, enabling tip-enhanced photoluminescence (TEPL) mapping of 2-dimensional (2D) materials. We demonstrate the potential of this near-field probe by mapping a 2D exciton coupled to a linearly polarized plasmonic resonance with below 30â nm spatial resolution. This work proposes a novel approach for integrating a plasmonic antenna at the apex of the near-field probe, paving the way for the fundamental study of light-matter interactions at the nanoscale.
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Structuring materials with atomic precision is the ultimate goal of nanotechnology and is becoming increasingly relevant as an enabling technology for quantum electronics/spintronics and quantum photonics. Here, we create atomic defects in monolayer MoS2 by helium ion (He-ion) beam lithography with a spatial fidelity approaching the single-atom limit in all three dimensions. Using low-temperature scanning tunneling microscopy (STM), we confirm the formation of individual point defects in MoS2 upon He-ion bombardment and show that defects are generated within 9 nm of the incident helium ions. Atom-specific sputtering yields are determined by analyzing the type and occurrence of defects observed in high-resolution STM images and compared with Monte Carlo simulations. Both theory and experiment indicate that the He-ion bombardment predominantly generates sulfur vacancies.
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The layer stacking order has profound effects on the physical properties of two-dimensional van der Waals heterostructures. For example, graphene multilayers can have distinct electronic band structures and exhibit completely different behaviors depending on the stacking order. Fascinating physical phenomena, such as correlated insulators, superconductors, and ferromagnetism, can also emerge with a periodic variation of the layer stacking order, which is known as the moiré superlattice in van der Waals materials. In this work, we realize the global phase transition between different graphene layer stacking orders and elucidate its microscopic origin. We experimentally determine the energy difference between different stacking orders with the accuracy of µeV/atom. We reveal that both the carrier doping and the electric field can drive the layer-stacking phase transition through different mechanisms: carrier doping can change the energy difference because of a non-negligible work function difference between different stacking orders; the electric field, on the other hand, induces a band-gap opening in ABC-stacked graphene and hence changes the energy difference. Our findings provide a fundamental understanding of the electrically driven stacking-order phase transition in few-layer graphene and demonstrate a reversible and noninvasive method to globally control the stacking order.
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Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional doping. We report on the direct experimental correlation of the atomic and electronic structure of a sulfur vacancy in monolayer WS_{2} by a combination of CO-tip noncontact atomic force microscopy and scanning tunneling microscopy. Sulfur vacancies, which are absent in as-grown samples, were deliberately created by annealing in vacuum. Two energetically narrow unoccupied defect states followed by vibronic sidebands provide a unique fingerprint of this defect. Direct imaging of the defect orbitals, together with ab initio GW calculations, reveal that the large splitting of 252±4 meV between these defect states is induced by spin-orbit coupling.
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Electrically controlling resonant energy transfer of optical emitters provides a novel mechanism to switch nanoscale light sources on and off individually for optoelectronic applications. Graphene's optical transitions are tunable through electrostatic gating over a broad wavelength spectrum, making it possible to modulate energy transfer from a variety of nanoemitters to graphene at room temperature. We demonstrate photoluminescence switching of individual colloidal quantum dots by electrically tuning their energy transfer to graphene. The gate dependence of energy transfer modulation confirms that the transition occurs when the Fermi level is shifted over half the emitter's excitation energy. The modulation magnitude decreases rapidly with increasing emitter-graphene distance (d), following the 1/d(4) rate trend unique to the energy transfer process to two-dimensional materials.
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Stacking van der Waals crystals allows for the on-demand creation of a periodic potential landscape to tailor the transport of quasiparticle excitations. We investigate the diffusion of photoexcited electron-hole pairs, or excitons, at the interface of WS2/WSe2 van der Waals heterostructure over a wide range of temperatures. We observe the appearance of distinct interlayer excitons for parallel and antiparallel stacking and track their diffusion through spatially and temporally resolved photoluminescence spectroscopy from 30 to 250 K. While the measured exciton diffusivity decreases with temperature, it surprisingly plateaus below 90 K. Our observations cannot be explained by classical models like hopping in the moiré potential. A combination of ab initio theory and molecular dynamics simulations suggests that low-energy phonons arising from the mismatched lattices of moiré heterostructures, also known as phasons, play a key role in describing and understanding this anomalous behavior of exciton diffusion. Our observations indicate that the moiré potential landscape is dynamic down to very low temperatures and that the phason modes can enable efficient transport of energy in the form of excitons.
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Point defects in two-dimensional materials are of key interest for quantum information science. However, the parameter space of possible defects is immense, making the identification of high-performance quantum defects very challenging. Here, we perform high-throughput (HT) first-principles computational screening to search for promising quantum defects within WS2, which present localized levels in the band gap that can lead to bright optical transitions in the visible or telecom regime. Our computed database spans more than 700 charged defects formed through substitution on the tungsten or sulfur site. We found that sulfur substitutions enable the most promising quantum defects. We computationally identify the neutral cobalt substitution to sulfur (Co S 0 ) and fabricate it with scanning tunneling microscopy (STM). The Co S 0 electronic structure measured by STM agrees with first principles and showcases an attractive quantum defect. Our work shows how HT computational screening and nanoscale synthesis routes can be combined to design promising quantum defects.
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Plasmonic metal/semiconductor nanocomposites promise to be a breakthrough for boosting and investigating photon-assisted processes at the nanoscale, with exciting perspectives for energy conversion and catalysis. However, the efficiency and selectivity of these surface processes are still far from being controlled. Here, shown for the first time, is a new class of photocatalyst which is based on the synergistic combination of bowtie-like gold nanoantennas and SiO2 /TiO2 core/shell oxide beads. These systems are exploited as efficient near-field optical light concentrators, stimulating photon-driven processes at the metal-semiconductor interface. Extraordinary enhancements of photodegradation rates (minutes instead of hours) result from matching the nanoantenna surface plasmon resonance with the optical absorption of organic dyes and the excitation source wavelength. Moreover, strong Raman enhancements are observed allowing for direct in-situ monitoring of reaction progress of different analytes on the same site.
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Efficient conversion of photonic to plasmonic energy is important for nano-optical applications, particularly imaging and spectroscopy. Recently a new generation of photonic/plasmonic transducers, the 'campanile' probes, has been developed that overcomes many shortcomings of previous near-field probes by efficiently merging broadband field enhancement with bidirectional coupling of far- to near-field electromagnetic modes. In this work we compare the properties of the campanile structure with those of current NSOM tips using finite element simulations. Field confinement, enhancement, and polarization near the apex of the probe are evaluated relative to local fields created by conical tapered tips in vacuum and in tip-substrate gap mode. We show that the campanile design has similar field enhancement and bandwidth capabilities as those of ultra-sharp metallized tips, but without the substrate and sample restrictions inherent in the tip-surface gap mode operation often required by those tips. In addition, we show for the first time that this campanile probe structure also significantly enhances the radiative rate of any dipole emitter located near the probe apex, quantifying the enhanced decay rate and demonstrating that over 90% of the light radiated by the emitter is "captured" by this probe. This is equivalent to collecting the light from a solid angle of ~3.6 pi. These advantages are crucial for performing techniques such as Raman and IR spectroscopy, white-light nano-ellipsometry and ultrafast pump-probe studies at the nanoscale.
Assuntos
Desenho Assistido por Computador , Ressonância de Plasmônio de Superfície/instrumentação , Transdutores , Simulação por Computador , Desenho de Equipamento , Análise de Falha de Equipamento , Luz , Modelos Teóricos , Espalhamento de RadiaçãoRESUMO
The ability to correlate optical hyperspectral mapping and high resolution topographic imaging is critically important to gain deep insight into the structure-function relationship of nanomaterial systems. Scanning near-field optical microscopy can achieve this goal, but at the cost of significant effort in probe fabrication and experimental expertise. To overcome these two limitations, we have developed a low-cost and high-throughput nanoimprinting technique to integrate a sharp pyramid structure on the end facet of a single-mode fiber that can be scanned with a simple tuning-fork technique. The nanoimprinted pyramid has two main features: (1) a large taper angle (â¼70°), which determines the far-field confinement at the tip, resulting in a spatial resolution of 275 nm, an effective numerical aperture of 1.06, and (2) a sharp apex with a radius of curvature of â¼20 nm, which enables high resolution topographic imaging. Optical performance is demonstrated through evanescent field distribution mapping of a plasmonic nanogroove sample, followed by hyperspectral photoluminescence mapping of nanocrystals using a fiber-in-fiber-out light coupling mode. Through comparative photoluminescence mapping on 2D monolayers, we also show a threefold improvement in spatial resolution over chemically etched fibers. These results show that the bare nanoimprinted near-field probes provide simple access to spectromicroscopy correlated with high resolution topographic mapping and have the potential to advance reproducible fiber-tip-based scanning near-field microscopy.
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We have demonstrated hyperspectral tip-enhanced Raman imaging on dielectric substrates using linearly polarized light and nanofabricated coaxial antenna tips. A full Raman spectrum was acquired at each pixel of a 256 by 256 pixel contact-mode atomic force microscope image of carbon nanotubes grown on a fused silica microscope coverslip, allowing D and G mode intensity and D-mode peak shifts to be measured with â¼20 nm spatial resolution. Tip enhancement was sufficient to acquire useful Raman spectra in 50-100 ms. Coaxial scan probes combine the efficiency and enhanced, ultralocalized optical fields of plasmonically coupled antennae with the superior topographical imaging properties of sharp metal tips. The yield of the coaxial tip fabrication process is close to 100%, and the tips are sufficiently durable to support hours of contact-mode force microscope imaging. Our coaxial probes avoid the limitations associated with the "gap-mode" imaging geometry used in most tip-enhanced Raman studies to date, where a sharp metal tip is held â¼1 nm above a metallic substrate with the sample located in the gap.
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Silicon-vacancy (SiV) centers in diamond have attracted attention as highly stable fluorophores for sensing and as possible candidates for quantum information science. While prior studies have shown that the formation of hybrid diamond-metal structures can increase the rates of optical absorption and emission, many practical applications require diamond plasmonic structures that are stable in harsh chemical and thermal environments. Here, we demonstrate that Ag nanospheres, produced both in quasi-random arrays by thermal dewetting and in ordered arrays using electron-beam lithography, can be completely encapsulated with a thin diamond coating containing SiV centers, leading to hybrid core-shell nanostructures exhibiting extraordinary chemical and thermal stability as well as enhanced optical properties. Diamond shells with a thickness on the order of 20-100 nm are sufficient to encapsulate and protect the Ag nanostructures with different sizes ranging from 20 nm to hundreds of nanometers, allowing them to withstand heating to temperatures of 1000 °C and immersion in harsh boiling acid for 24 h. Ultrafast photoluminescence lifetime and super-resolution optical imaging experiments were used to study the SiV properties on and off the core-shell structures, which show that the SiV on core-shell structures have higher brightness and faster decay rate. The stability and optical properties of the hybrid Ag-diamond core-shell structures make them attractive candidates for high-efficiency imaging and quantum-based sensing applications.
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Mapping the optical response of buried interfaces with nanoscale spatial resolution is crucial in several systems where an active component is embedded within a buffer layer for structural or functional reasons. Here, we demonstrate that cathodoluminescence microscopy is not only an ideal tool for visualizing buried interfaces, but can be optimized through heterostructure design. We focus on the prototypical system of monolayers of semiconducting transition metal dichalcogenide sandwiched between hexagonal boron nitride layers. We leverage the encapsulating layers to tune the nanoscale spatial resolution achievable in cathodoluminescence mapping while also controlling the brightness of the emission. Thicker encapsulation layers result in a brighter emission while thinner ones enhance the spatial resolution at the expense of the signal intensity. We find that a favorable trade-off between brightness and resolution is achievable up to about â¼100 nm of total encapsulation. Beyond this value, the brightness gain is marginal, while the spatial resolution enters a regime that is achievable by diffraction-limited optical microscopy. By preparing samples of varying encapsulation thickness, we are able to determine a surprisingly isotropic exciton diffusion length of >200 nm within the hexagonal boron nitride which is the dominant factor that determines spatial resolution. We further demonstrate that we can overcome the exciton diffusion-limited spatial resolution by using spectrally distinct signals, which is the case for nanoscale inhomogeneities within monolayer transition metal dichalcogenides.
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Atomic spin centers in 2D materials are a highly anticipated building block for quantum technologies. Here, we demonstrate the creation of an effective spin-1/2 system via the atomically controlled generation of magnetic carbon radical ions (CRIs) in synthetic two-dimensional transition metal dichalcogenides. Hydrogenated carbon impurities located at chalcogen sites introduced by chemical doping are activated with atomic precision by hydrogen depassivation using a scanning probe tip. In its anionic state, the carbon impurity is computed to have a magnetic moment of 1 µB resulting from an unpaired electron populating a spin-polarized in-gap orbital. We show that the CRI defect states couple to a small number of local vibrational modes. The vibronic coupling strength critically depends on the spin state and differs for monolayer and bilayer WS2. The carbon radical ion is a surface-bound atomic defect that can be selectively introduced, features a well-understood vibronic spectrum, and is charge state controlled.
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For two-dimensional (2D) layered semiconductors, control over atomic defects and understanding of their electronic and optical functionality represent major challenges towards developing a mature semiconductor technology using such materials. Here, we correlate generation, optical spectroscopy, atomic resolution imaging, and ab initio theory of chalcogen vacancies in monolayer MoS2. Chalcogen vacancies are selectively generated by in-vacuo annealing, but also focused ion beam exposure. The defect generation rate, atomic imaging and the optical signatures support this claim. We discriminate the narrow linewidth photoluminescence signatures of vacancies, resulting predominantly from localized defect orbitals, from broad luminescence features in the same spectral range, resulting from adsorbates. Vacancies can be patterned with a precision below 10 nm by ion beams, show single photon emission, and open the possibility for advanced defect engineering of 2D semiconductors at the ultimate scale.
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We present a study of the effect of gold nanoparticles (Au NPs) on TiO2 on charge generation and trapping during illumination with photons of energy larger than the substrate band gap. We used a novel characterization technique, photoassisted Kelvin probe force microscopy, to study the process at the single Au NP level. We found that the photoinduced electron transfer from TiO2 to the Au NP increases logarithmically with light intensity due to the combined contribution of electron-hole pair generation in the space charge region in the TiO2-air interface and in the metal-semiconductor junction. Our measurements on single particles provide direct evidence for electron trapping that hinders electron-hole recombination, a key factor in the enhancement of photo(electro)catalytic activity.