Rational Development of Guanidinate and Amidinate Based Cerium and Ytterbium Complexes as Atomic Layer Deposition Precursors: Synthesis, Modeling, and Application.

Owing to the limited availability of suitable precursors for vapor phase deposition of rare-earth containing thin-film materials, new or improved precursors are sought after. In this study, we explored new precursors for atomic layer deposition (ALD) of cerium (Ce) and ytterbium (Yb) containing thin films. A series of homoleptic tris-guanidinate and tris-amidinate complexes of cerium (Ce) and ytterbium (Yb) were synthesized and thoroughly characterized. The C-substituents on the N-C-N backbone (Me, NMe2 , NEt2 , where Me=methyl, Et=ethyl) and the N-substituents from symmetrical iso-propyl (iPr) to asymmetrical tertiary-butyl (tBu) and Et were systematically varied to study the influence of the substituents on the physicochemical properties of the resulting compounds. Single crystal structures of [Ce(dpdmg)3 ] 1 and [Yb(dpdmg)3 ] 6 (dpdmg=N,N'-diisopropyl-2-dimethylamido-guanidinate) highlight a monomeric nature in the solid-state with a distorted trigonal prismatic geometry. The thermogravimetric analysis shows that the complexes are volatile and emphasize that increasing asymmetry in the complexes lowers their melting points while reducing their thermal stability. Density functional theory (DFT) was used to study the reactivity of amidinates and guanidinates of Ce and Yb complexes towards oxygen (O2 ) and water (H2 O). Signified by the DFT calculations, the guanidinates show an increased reactivity toward water compared to the amidinate complexes. Furthermore, the Ce complexes are more reactive compared to the Yb complexes, indicating even a reactivity towards oxygen potentially exploitable for ALD purposes. As a representative precursor, the highly reactive [Ce(dpdmg)3 ] 1 was used for proof-of-principle ALD depositions of CeO2 thin films using water as co-reactant. The self-limited ALD growth process could be confirmed at 160 °C with polycrystalline cubic CeO2 films formed on Si(100) substrates. This study confirms that moving towards nitrogen-coordinated rare-earth complexes bearing the guanidinate and amidinate ligands can indeed be very appealing in terms of new precursors for ALD of rare earth based materials.

Tuning Coordination Geometry of Nickel Ketoiminates and Its Influence on Thermal Characteristics for Chemical Vapor Deposition of Nanostructured NiO Electrocatalysts.

Nickel-based nanostructured materials have gained widespread attention, particularly for energy-related applications. Employing chemical vapor deposition (CVD) for NiO necessitates suitable nickel precursors that are volatile and stable. Herein, we report the synthesis and characterization of a series of new nickel ß-ketoiminato complexes with different aliphatic and etheric side chain substitutions, namely, bis(4-(isopropylamino)-pent-3-en-2-onato)nickel(II) ([Ni(ipki)2], 1), bis(4-(2-methoxyethylamino)pent-3-en-2-onato)nickel(II) ([Ni(meki)2], 2), bis(4-(2-ethoxyethylamino)pent-3-en-2-onato)nickel(II) ([Ni(eeki)2], 3), bis(4-(3-methoxy-propylamino)-pent-3-en-2-onato)nickel(II) ([Ni(mpki)2], 4), and bis(4-(3-ethoxypropylamino)pent-3-en-2-onato)nickel(II) ([Ni(epki)2], 5). These compounds have been thoroughly characterized with regard to their purity and identity by means of nuclear magnetic resonance spectroscopy (NMR) and electron impact mass spectrometry (EI-MS). Contrary to other transition metal ß-ketoiminates, the imino side chain strongly influences the structural geometry of the complexes, which was ascertained via single-crystal X-ray diffraction (XRD). As a result, the magnetic momenta of the molecules also differ significantly as evidenced by the magnetic susceptibility measurements employing Evan's NMR method in solution. Thermal analysis revealed the suitability of these compounds as new class of precursors for CVD of Ni containing materials. As a representative precursor, compound 2 was evaluated for the CVD of NiO thin films on Si(100) and conductive glass substrates. The as-deposited nanostructured layers were stoichiometric and phase pure NiO as confirmed by XRD, Rutherford backscattering spectrometry (RBS), and nuclear reaction analysis (NRA). X-ray photoelectron spectroscopy (XPS) indicated the formation of slightly oxygen-rich surfaces. The assessment of NiO films in electrocatalysis revealed promising activity for the oxygen evolution reactions (OER). The current densities of 10 mA cm-2 achieved at overpotentials ranging between 0.48 and 0.52 V highlight the suitability of the new Ni complexes in CVD processes for the fabrication of thin film electrocatalysts.

Rational Development of Cobalt ß-Ketoiminate Complexes: Alternative Precursors for Vapor-Phase Deposition of Spinel Cobalt Oxide Photoelectrodes.

A series of six cobalt ketoiminates, of which one was previously reported but not explored as a chemical vapor deposition (CVD) precursor, namely, bis(4-(isopropylamino)pent-3-en-2-onato)cobalt(II) ([Co( ipki)2], 1), bis(4-(2-methoxyethylamino)pent-3-en-2-onato)cobalt(II) ([Co(meki)2], 2), bis(4-(2-ethoxyethylamino)pent-3-en-2-onato)cobalt(II) ([Co(eeki)2], 3), bis(4-(3-methoxy-propylamino)pent-3-en-2-onato)cobalt(II) ([Co(mpki)2], 4), bis(4-(3-ethoxypropylamino)pent-3-en-2-onato)cobalt(II) ([Co(epki)2], 5), and bis(4-(3-isopropoxypropylamino)pent-3-en-2-onato)cobalt(II) ([Co( ippki)2], 6) were synthesized and thoroughly characterized. Single-crystal X-ray diffraction (XRD) studies on compounds 1-3 revealed a monomeric structure with distorted tetrahedral coordination geometry. Owing to the promising thermal properties, metalorganic CVD of CoO x was performed using compound 1 as a representative example. The thin films deposited on Si(100) consisted of the spinel-phase Co3O4 evidenced by XRD, Rutherford backscattering spectrometry/nuclear reaction analysis, and X-ray photoelectron spectroscopy. Photoelectrochemical water-splitting capabilities of spinel CoO x films grown on fluorine-doped tin oxide (FTO) and TiO2-coated FTO revealed that the films show p-type behavior with conduction band edge being estimated to -0.9 V versus reversible hydrogen electrode. With a thin TiO2 underlayer, the CoO x films exhibit photocurrents related to proton reduction under visible light.

An N-Heterocyclic Carbene Based Silver Precursor for Plasma-Enhanced Spatial Atomic Layer Deposition of Silver Thin Films at Atmospheric Pressure.

A new N-heterocyclic carbene (NHC)-based silver amide compound, 1,3-di-tert-butyl-imidazolin-2-ylidene silver(I) 1,1,1-trimethyl-N-(trimethylsilyl)silanaminide [(NHC)Ag(hmds)] was synthesized and analyzed by single-crystal X-ray diffraction, 1 H and 13 C NMR spectroscopy, as well as EI mass spectrometry, and subsequently evaluated for its thermal characteristics. This new halogen- and phosphine-free Ag atomic layer deposition (ALD) precursor was tested successfully for silver thin film growth in atmospheric pressure plasma enhanced spatial (APP-ALD). High-purity conductive Ag thin films with a low sheet resistance of 0.9 Ω/sq (resistivity: 10-5  Ωcm) were deposited at 100 °C and characterized by X-ray photoelectron spectroscopy, scanning electron microscopy, optical transmittance, and Rutherford back-scattering techniques. The carbene-based Ag precursor and the new APP-ALD process are significant developments in the field of precursor chemistry as well as metal ALD processing.

Unearthing [3-(Dimethylamino)propyl]aluminium(III) Complexes as Novel Atomic Layer Deposition (ALD) Precursors for Al2 O3 : Synthesis, Characterization and ALD Process Development.

Identification and synthesis of intramolecularly donor-stabilized aluminium(III) complexes, which contain a 3-(dimethylamino)propyl (DMP) ligand, as novel atomic layer deposition (ALD) precursors has enabled the development of new and promising ALD processes for Al2 O3 thin films at low temperatures. Key for this promising outcome is the nature of the ligand combination that leads to heteroleptic Al complexes encompassing optimal volatility, thermal stability and reactivity. The first ever example of the application of this family of Al precursors for ALD is reported here. The process shows typical ALD like growth characteristics yielding homogeneous, smooth and high purity Al2 O3 thin films that are comparable to Al2 O3 layers grown by well-established, but highly pyrophoric, trimethylaluminium (TMA)-based ALD processes. This is a significant development based on the fact that these compounds are non-pyrophoric in nature and therefore should be considered as an alternative to the industrial TMA-based Al2 O3 ALD process used in many technological fields of application.

A novel concept for the synthesis of multiply doped gold clusters [(M@Au(n)M'(m))L(k)](q+).

Heterometal-doped gold clusters are poorly accessible through wet-chemical approaches and main-group-metal- or early-transition-metal-doped gold clusters are rare. Compounds [M(AuPMe3 )11 (AuCl)](3+) (M=Pt, Pd, Ni) (1-3), [Ni(AuPPh3 )(8-2n) (AuCl)3 (AlCp*)n ] (n=1, 2) (4, 5), and [Mo(AuPMe3 )8 (GaCl2 )3 (GaCl)](+) (6) were selectively obtained by the transmetalation of [M(M'Cp*)n ] (M=Mo, E=Ga, n=6; M=Pt, Pd, Ni, M'=Ga, Al, n=4) with [ClAuPR3 ] (R=Me, Ph) and characterized by single-crystal X-ray diffraction and ESI mass spectrometry. DFT calculations were used to analyze the bonding situation. The transmetalation proved to be a powerful tool for the synthesis of heterometal-doped gold clusters with a design rule based on the 18 valence electron count for the central metal atom M and in agreement with the unified superatom concept based on the jellium model.

Homoleptic gadolinium amidinates as precursors for MOCVD of oriented gadolinium nitride (GdN) thin films.

Five new homoleptic gadolinium tris-amidinate complexes are reported, which were synthesized via the salt-elimination reaction of GdCl(3) with 3 equiv of lithiated symmetric and asymmetric amidinates at ambient temperature. The Gd-tris-amidinates [Gd{(N(i)Pr)(2)CR}(3)] [R = Me (1), Et (2), (t)Bu (3), (n)Bu (4)] and [Gd{(NEt)(N(t)Bu)CMe}(3)] (5) are solids at room temperature and sublime at temperatures of about 125 °C (6 × 10(-2) mbar) with the exception of compound 4, which is a viscous liquid at room temperature. According to X-ray diffraction analysis of 3 and 5 as representative examples of the series, the complexes adopt a distorted octahedral structure in the solid state. Mass spectrometric (MS) data confirmed the monomeric structure in the gas phase, and high-resolution MS allowed the identification of characteristic fragments, such as [{(N(i)Pr)(2)CR}GdCH(3)](+) and [{(N(i)Pr)(2)CR}GdNH](+). The alkyl substitution patterns of the amidinate ligands clearly show an influence on the thermal properties, and specifically, the introduction of the asymmetric carbodiimide leads to a lowering of the onset of volatilization and decomposition. Compound 5, which is the first Gd complex with an asymmetric amidinate ligand system to be reported, was, therefore, tested for the MOCVD of GdN thin films. The as-deposited GdN films were capped with Cu in a subsequent MOCVD process to prevent postdeposition oxidation of the films. Cubic GdN on Si(100) substrates with a preferred orientation in the (200) direction were grown at 750 °C under an ammonia atmosphere and exhibited a columnar morphology and low levels of C or O impurities according to scanning electron microscopy, Rutherford backscattering, and nuclear reaction analysis.

catena-Poly[[(tetrahydrofuran-κO)potassium]-µ-(η5:η5)-2,3,4,5-tetramethyl-1-n-pentylcyclopentadienyl].

The title compound, [K(C14H23)(C4H8O)]n, comprises zigzag chains of alternating bridging 2,3,4,5-tetramethyl-1-n-pentylcyclopentadienyl ligands and potassium ions, with an ancillary tetrahydrofuran ligand in the coordination environment of potassium. The coordination polymer strands so formed extend by 21 screw symmetry in the b-axis direction. The chemically modified cyclopentadienyl ligand, with a tethered n-pentyl group, was synthesized from 2,3,4,5-tetramethylcyclopent-2-enone by a Grignard reaction.

Low-valent Ge(2) and Ge(4) species trapped by N-heterocyclic gallylene.

Much π and no σ: quantum chemical calculations showed that the Ge atoms of the Ga(2)Ge(2) core in Ge(2)[Ga(DPP)](2) are not bonded by σ interactions, but rather by a transannular π interaction. The compound is formed by reduction of (PCy(3))⋅GeCl(2) with Ga(DDP)/KC(8) which also yielded a further product Ge(4)[Ga(DPP)](2) with a Ge(4) tetrahedron (DDP=HC(CMeNC(6)H(3)-2,6-iPr(2))(2)).

First dinuclear copper/gallium complexes: supporting Cu0 and Cu(I) centres by low-valent organogallium ligands.

The synthesis and structural characterisation of low-valent dinuclear copper(I) and copper(0) complexes supported by organogallium ligands has been accomplished for the first time by the reductive coordination reaction of [GaCp*] (Cp*=pentamethylcyclopentadienyl) and [Ga(ddp)] (ddp=HC(CMeNC(6)H(3)-2,6-iPr(2))(2) 2-diisopropylphenylamino-4-diisopropylphenylimino-2-pentene) with readily available copper(II) and copper(I) precursors. The treatment of CuBr(2) and Cu(OTf)(2) (OTf=CF(3)SO(3)) with [Ga(ddp)] under mild conditions resulted in elimination of [Ga(L)(2)(ddp)] (L=Br, OTf) and afforded the novel gallium(I)/copper(I) compounds [{(ddp)GaCu(L)}(2)] (L=Br (1), OTf (2)). The single-crystal X-ray structure determinations of 1 and 2 reveal that these molecules are composed of {(ddp)GaCu(L)} dimeric units, with planar Cu(I)-Ga(I) four-membered rings and short Cu(I)...Cu(I) distances, with 2 exhibiting the shortest Cu(I)Cu(I) contact reported to date of 2.277(3) A. The all-gallium coordinated dinuclear [Cu(2)(GaCp*)(mu-GaCp*)(3)Ga(OTf)(3)] (3) is formed when Cu(OTf)(2) is combined with [GaCp*] instead of [Ga(ddp)]. Notably, in the course of this redox reaction Lewis acidic Ga(OTf)(3) is formed, which coordinates to one of the electron-rich copper(0) centres. Compound 3 is suggested as the first case of a structurally characterised complex of copper(0). By changing the copper(II) to a copper(I) source, that is, [Cu(cod)(2)][OTf] (cod=1,5-cyclooctadiene), the salt [Cu(2)(GaCp*)(3)(mu-GaCp*)(2)][OTf](2) (4) is formed, the cationic part of which is related to previously described isoelectronic dinuclear d(10) complexes of the type [M(2)(GaCp*)(5)] (M=Pd, Pt).

Group 13 ligand supported heavy-metal complexes: first structural evidence for gallium-lead and gallium-mercury bonds.

Heavy-metal complexes of lead and mercury stabilized by Group 13 ligands were derived from the oxidative addition of Ga(ddp) (ddp=HC(CMeNC(6)H(3)-2,6-iPr(2))(2), 2-diisopropylphenylamino-4-diisopropyl phenylimino-2-pentene) with corresponding metal precursors. The reaction of Me(3)PbCl and Ga(ddp) afforded compound [{(ddp)Ga(Cl)}PbMe(3)] (1) composed of Ga-Pb(IV) bonds. In addition, the monomeric plumbylene-type compound [{(ddp)Ga(OSO(2)CF(3))}(2)Pb(thf)] (2a) with an unsupported Ga-Pb(II)-Ga linkage was obtained by the reaction of [Pb(OSO(2)CF(3))(3)] with Ga(ddp) (2 equiv). Compound 2a falls under the rare example of a discrete plumbylene-type compound supported by a nonclassical ligand. Interesting structural changes were observed when [Pb(OSO(2)CF(3))(3)]2.H(2)O was treated with Ga(ddp) in a 1:2 ratio to yield [{(ddp)Ga(mu-OSO(2)CF(3))}(2)(OH(2))Pb] (2b) at below -10 degrees C. Compound 2b consists of a bent Ga-Pb-Ga backbone with a bridging triflate group between the Ga-Pb bond and a weakly interacting water molecule at the gallium center. Similarly, the reaction of mercury thiolate Hg(SC(6)F(5)) with Ga(ddp) (2 equiv) produced the bimetallic homoleptic compounds anti-[{(ddp)Ga(SC(6)F(5))}(2)Hg] (3a) and gauche-[{(ddp)Ga(SC(6)F(5))}(2)Hg] (3b), respectively, with a linear Ga-Hg-Ga linkage. Compounds 1-3 were structurally characterized and these are the first examples of compounds comprised of Ga-Pb(II), Ga-Pb(IV), and Ga-Hg bonds.

P-P bond activation of P4 tetrahedron by group 13 carbenoid and its bis molybdenum pentacarbonyl adduct.

Activation of white phosphorus with Ga(DDP) (DDP = 2-diiso-propylphenylamino-4-diiso-propylphenylimino-2-pentene) afforded [(DDP)Ga(P(4))] (1) by insertion of the Ga(I) center at one of the six P-P bonded edges of the P(4) tetrahedron. Further reaction of 1 with three equivalents of Mo(CO)(6) results in the formation of [(DDP)Ga(eta(2:1:1)-P(4)){Mo(CO)(5)}(2)] x 2 toluene (2). Compounds 1 and 2 are characterized by (1)H, (13)C, and (31)P NMR spectroscopy, elemental analysis, and single crystal X-ray structural analysis. The solid-state structure of molecule 1 reveals the first example of a structurally characterized GaP(4) core stabilized by a beta-diketiminate ligand. Compound 2 represents a rare type of coordination mode of a gallium supported P(4) butterfly structure.

Hafnium carbamates and ureates: new class of precursors for low-temperature growth of HfO2 thin films.

Novel volatile compounds of hafnium, namely tetrakis-N,O-dialkylcarbamato hafnium(iv) [Hf((i)PrNC(O)O(i)Pr)(4)] () and tetrakis-N,N,N'-trialkylureato hafnium(iv) [Hf((i)PrNC(O)N-(Me)Et)(4)] (), have been synthesized through the simple insertion reaction of isopropyl isocyanate into hafnium isopropoxide and hafnium ethylmethylamide, respectively; based on the promising thermal properties, compound has been evaluated as a precursor for metalorganic chemical vapor deposition (MOCVD) of HfO(2) thin films, which resulted in the growth of stoichiometric and crystalline layers with a uniform morphology at temperature as low as 250 degrees C.

A cobalt(II) hexafluoroacetylacetonate ethylenediamine complex as a CVD molecular source of cobalt oxide nanostructures.

An adduct of Co(II) 1,1,1,5,5,5-hexafluoro-2,4-pentanedionate with N,N,N',N'-tetramethylethylenediamine is synthesized by a simple procedure and, for the first time, thoroughly characterized by several analytical methods in order to elucidate its structure (single-crystal X-ray diffraction), chemical composition (elemental analyses, FT-IR), optical properties (UV-vis absorption spectroscopy), thermal behavior (thermogravimetric analysis and differential scanning calorimetry), and fragmentation pathways (electrospray ionization mass spectrometry and tandem mass spectrometry). The target complex is monomeric with a pseudo-octahedral Co(II) core and presents a clean decomposition pathway and a high volatility at moderate temperatures. Preliminary chemical vapor deposition (CVD) experiments highlight its very promising features as a CVD/atomic layer deposition molecular source for cobalt oxide nanosystems.

Bis[(E)-4-(hydroxy-imino-meth-yl)pyridinium] oxalate.

The formula unit of the title compound, 2C(6)H(7)N(2)O(+)·C(2)O(4) (2-), comprises two symmetry-equivalent 4-(hydroxy-imino-meth-yl)-pyridinium cations on general positions, linked through hydrogen bonding via an oxalate anion that resides on a crystallographic centre of symmetry. The crystal structure consists of infinite chains of cations and oxalate anions directed by O-H⋯O and multicentre N-H⋯O inter-molecular hydrogen-bonding inter-actions.

Systematic molecular engineering of Zn-ketoiminates for application as precursors in atomic layer depositions of zinc oxide.

Molecular engineering of seven closely related zinc ketoiminates, namely, [Zn(dapki)2], [Zn(daeki)2], [Zn(epki)2], [Zn(eeki)2], [Zn(mpki)2], [Zn(meki)2], and [Zn(npki)2], leads to the optimisation of precursor thermal properties in terms of volatilisation rate, onset of volatilisation, reactivity and thermal stability. The influence of functional groups at the imine side chain of the ligands on the precursor properties is studied with regard to their viability as precursors for atomic layer deposition (ALD) of ZnO. The synthesis of [Zn(eeki)2], [Zn(epki)2] and [Zn(dapki)2] and the crystal structures of [Zn(mpki)2], [Zn(eeki)2], [Zn(dapki)2] and [Zn(npki)2] are presented. From the investigation of the physico-chemical characteristics, it was inferred that all compounds are monomeric, volatile and exhibit high thermal stability, all of which make them promising ALD precursors. Compound [Zn(eeki)2] is in terms of thermal properties the most promising Zn-ketoiminate. It is reactive towards water, possesses a melting point of 39 °C, is stable up to 24 days at 220 °C and has an extended volatilisation rate compared to the literature known Zn-ketoiminates. It demonstrated self-saturated, water assisted growth of zinc oxide (ZnO) with growth rates in the order of 1.3 Å per cycle. Moreover, it displayed a broad temperature window from TDep = 175-300 °C and is the first report of a stable high temperature (>200 °C) ALD process for ZnO returning highly promising growth rates.

Insertion of organoindium carbenoids into rhodium halide bonds: revisiting a classic type of transition metal-group 13 metal bond formation.

Insertion of the carbenoid group 13 metal species InCp* (Cp* = pentamethylcyclopentadienyl) and InC(SiMe3)3 into the Rh-Cl bonds of [[RhCp*Cl2]2] yields the new complexes [Cp*Rh(InCp*)3(Cl)2] 1 and [Cp*Rh(mu2-Cl)2(InC(SiMe3)3)3] 2, respectively, exhibiting novel cage-like intermetallic complexes with In-Cl-In bridges.

Mononuclear precursor for MOCVD of HfO2 thin films.

We report the precursor characteristics of a novel mononuclear mixed alkoxide compound [Hf(O(i)Pr)2(tbaoac)2] and its application towards MOCVD of HfO2 thin films in a production tool CVD reactor.

Novel ß-ketoiminato complexes of zirconium: synthesis, characterization and evaluation for solution based processing of ZrO2 thin films.

Treatment of tetrakis(diethylamido)zirconium(IV); [Zr(NEt2)4] with a series of ß-ketoimines ({[RHN]C(CH3)=C(H)C(CH3)=O} where R is a functionalized side-chain; 4-(2-methoxyethylamino)pent-3-en-2-one, Hmeap; 4-(3-methoxypropylamino)pent-3-en-2-one, Hmpap; 4-(2-(dimethylamino)ethylamino)pent-3-en-2-one, Hdeap; 4-(3-(dimethylamino)propylamino)pent-3-en-2-one, Hdpap) leads to an amine substitution reaction that yielded novel monomeric heteroleptic mixed amido-ketoiminato complexes of the type bis(4-(2-methoxyethylamino)pent-3-en-2-onato)bis(diethylamido)zirconium(IV) (1), bis(4-(3-methoxypropylamino)pent-3-en-2-onato)bis(diethylamido)zirconium(IV) (2), and bis(4-(3-(dimethylamino)propylamino)pent-3-en-2-onato)bis(diethylamido)zirconium(IV) (3), and eight-coordinated homoleptic complexes tetrakis(4-(2-methoxyethylamino)pent-3-en-2-onato)zirconium(IV) (4) and tetrakis(4-(2-(dimethylamino)ethylamino)pent-3-en-2-onato)zirconium(IV) (5), depending on the ratio of the ligand to zirconium. Adopting a similar strategy with zirconium alkoxide, namely [Zr(O(i)Pr)4·(i)PrOH], with ß-ketoimine Hmeap, leads to the formation of a dimer, bis(µ2-isopropoxo)bis(4-(2-methoxyethylamino)pent-3-en-2-onato)tetrakis(isopropoxo)dizirconium(IV) (6). The newly synthesised complexes were characterized by NMR spectroscopy, mass spectrometry, single crystal X-ray diffraction, elemental analysis and thermal analysis. The low decomposition temperature facilitated by the stepwise elimination of the ketominate ligand from the complex and the stability of the complexes obtained in air as well as in solution makes them highly suitable for solution based processing of ZrO2 thin films, which is demonstrated using compound 5 on Si(100) substrates. High quality ZrO2 films were obtained and were investigated for their structure, morphology, composition and optical properties. Low temperature crystallisation of ZrO2 is achieved by a simple chemical deposition process using the new class of Zr precursors and the films exhibit an optical transmittance above 90%.

Reductive elimination: a pathway to low-valent aluminium species.

Compounds Cp*AlH2 (1) and Cp*2AlH (2) reductively eliminate Cp*H in benzene or toluene under reflux conditions to give Al(s) and AlCp*, respectively.