Controlled Bipolar Doping of One-Dimensional van der Waals Nb2Pd3Se8.

Tailoring the electrical properties of one-dimensional (1D) van der Waals (vdW) materials is desirable for their applications toward electronic devices by exploiting their unique characteristics. However, 1D vdW materials have not been extensively investigated for modulation of their electrical properties. Here we control doping levels and types of 1D vdW Nb2Pd3Se8 over a wide energy range by immersion in AuCl3 or ß-nicotinamide adenine dinucleotide (NADH) solutions, respectively. Through spectroscopic analyses and electrical characterizations, we confirm that the charges were effectively transferred to Nb2Pd3Se8, and the dopant concentration was adjusted to the immersion time. Furthermore, we make the axial p-n junction of 1D Nb2Pd3Se8 by a selective area p-doping using the AuCl3 solution, which exhibits rectifying behavior with an Iforward/Ireverse of 81 and an ideality factor of 1.2. Our findings could pave the way to more practical and functional electronic devices based on 1D vdW materials.

Novel High Current-Carrying Quasi-1D Material: Nb2 PdS6.

A quasi-one-dimensional van der Waals metallic nanowire Nb2 PdS6 is synthesized, and its electrical characteristics are analyzed. The chemical vapor transport method is applied to produce centimeter-scale Nb2 PdS6 crystals with needle-like structures and X-ray diffraction (XRD) confirms their high crystallinity. Scanning transmission electron microscopy reveals the crystal orientation and atomic arrangement of the specific region with atomic resolution. The electrical properties are examined by delaminating bulk Nb2 PdS6 crystals into a few nanometer-scale wires onto 100 nm-SiO2 /Si substrates using a mechanical exfoliation process. Ohmic behavior is confirmed at the low-field measurements regardless of their thickness variation, and 4.64 nm-thick Nb2 PdS6 shows a breakdown current density (JBD ) of 52 MA cm-2 when the high electrical field is delivered. Moreover, with further exfoliation down to a single atomic chain, the JBD of Nb2 PdS6 is predicted to have a value of 527 MA cm-2 . The breakdown of Nb2 PdS6 proceeds due to the Joule heating mechanism, and the Nb2 PdS6 nanowires are well fitted to the 1D thermal dissipating model.

Ta2 Ni3 Se8 : 1D van der Waals Material with Ambipolar Behavior.

In this study, high-purity and centimeter-scale bulk Ta2 Ni3 Se8 crystals are obtained by controlling the growth temperature and stoichiometric ratio between tantalum, nickel, and selenium. It is demonstrated that the bulk Ta2 Ni3 Se8 crystals could be effectively exfoliated into a few chain-scale nanowires through simple mechanical exfoliation and liquid-phase exfoliation. Also, the calculation of electronic band structures confirms that Ta2 Ni3 Se8 is a semiconducting material with a small bandgap. A field-effect transistor is successfully fabricated on the mechanically exfoliated Ta2 Ni3 Se8 nanowires. Transport measurements at room temperature reveal that Ta2 Ni3 Se8 nanowires exhibit ambipolar semiconducting behavior with maximum mobilities of 20.3 and 3.52 cm2 V-1 s-1 for electrons and holes, respectively. The temperature-dependent transport measurement (from 90 to 295 K) confirms the carrier transport mechanism of Ta2 Ni3 Se8 nanowires. Based on these characteristics, the obtained 1D vdW material is expected to be a potential candidate for additional 1D materials as channel materials.

Designed growth of porous 2D Nb2O5 with Ag nano-particles for differential detection of UV-A and UV-C.

We demonstrate the differential detection of UV-A (ultra-violet 320-400 nm region) and UV-C (100-280 nm) using porous two-dimensional (2D) Nb2O5 and additional Ag nano-particle decoration. The 2D Nb2O5, which has band-absorption edge near the UV-A zone, was synthesized by thermodynamic conversion of 2D material NbSe2 (Nb2O5 has lower Gibbs formation energy than NbSe2). For the differential detection (to distinguish with UV-C absorption), we decorated the Ag nano-particles on the Nb2O5 surface. By coating Ag nano-particles, we can expect (i) a decrease in the area of light absorption by the Ag-coated area, and (ii) an increase of surface plasmon absorption by Ag nano-particles, especially the UV-A region, resulting in strong intensity ratio change UV-A/UV-C.

Mimicking of five human senses using nanostructured ZnO single material.

We demonstrated a single-material multifunctional sensor using ZnO nanorods, which is capable of mimicking the five human senses. A simple method for the growth of ZnO nanorods and their application as a multifunctional sensor was studied. High-density ZnO nanorods were synthesized by the carbothermal transport method on a graphene catalyst. To optimize the sensing mechanisms, we investigated ZnO nanostructure growth under two oxygen flow rates. ZnO nanorods as sensors for smell, light, sound, touch, and taste, the five human senses, showed stable electrical signals under standard ambient conditions.

Spontaneous nano-gap formation in Ag film using NaCl sacrificial layer for Raman enhancement.

We report the method of fabrication of nano-gaps (known as hot spots) in Ag thin film using a sodium chloride (NaCl) sacrificial layer for Raman enhancement. The Ag thin film (20-50 nm) on the NaCl sacrificial layer undergoes an interfacial reaction due to the AgCl formed at the interface during water molecule intercalation. The intercalated water molecules can dissolve the NaCl molecules at interfaces and form the ionic state of Na+ and Cl-, promoting the AgCl formation. The Ag atoms can migrate by the driving force of this interfacial reaction, resulting in the formation of nano-size gaps in the film. The surface-enhanced Raman scattering activity of Ag films with nano-size gaps has been investigated using Raman reporter molecules, Rhodamine 6G (R6G).

Scalable Fabrication of Quasi-One-Dimensional van der Waals Ta2Pt3Se8 Nanowire Thin Films via Solution Processing for NO2 Gas Sensing over Large Areas.

Solution-based processing of van der Waals (vdW) one- (1D) and two-dimensional (2D) materials is an effective strategy to obtain high-quality molecular chains or atomic sheets in a large area with scalability. In this work, quasi-1D vdW Ta2Pt3Se8 was exfoliated via liquid phase exfoliation (LPE) to produce a stably dispersed Ta2Pt3Se8 nanowire solution. In order to screen the optimal exfoliation solvent, nine different solvents were employed with different total surface tensions and polar/dispersive (P/D) component (P/D) ratios. The LPE behavior of Ta2Pt3Se8 was elucidated by matching the P/D ratios between Ta2Pt3Se8 and the applied solvent, resulting in N-methyl-2-pyrrolidone (NMP) as an optimal solvent owing to the well-matched total surface tension and P/D ratio. Subsequently, Ta2Pt3Se8 nanowire thin films are manufactured via vacuum filtration using a Ta2Pt3Se8/NMP dispersion. Then, gas sensing devices are fabricated onto the Ta2Pt3Se8 nanowire thin films, and gas sensing property toward NO2 is evaluated at various thin-film thicknesses. A 50 nm thick Ta2Pt3Se8 thin-film device exhibited a percent response of 25.9% at room temperature and 32.4% at 100 °C, respectively. In addition, the device showed complete recovery within 14.1 min at room temperature and 3.5 min at 100 °C, respectively.

Tailoring Contacts for High-Performance 1D Ta2Pt3S8 Field-Effect Transistors.

Materials with van der Waals (vdW) unit structures rely on weak interunit vdW forces, facilitating physical separation and advancing nanomaterial research with remarkable electrical properties. Recently, there has been growing interest in one-dimensional (1D) vdW materials, celebrated for their advantageous properties, characterized by reduced dimensionality and the absence of dangling bonds. In this context, we synthesize Ta2Pt3S8, a 1D vdW material, and assess its suitability for field-effect transistor (FET) applications. Spectroscopic analysis and electrical characterization confirmed that the band gap and work function of Ta2Pt3S8 are 1.18 and 4.77 eV, respectively. Leveraging various electrode materials, we fabricated n-type FETs based on Ta2Pt3S8 and identified Cr as the optimal electrode, exhibiting a high mobility of 57 cm2 V-1 s-1. In addition, we analyzed the electron transport mechanism in n-type FETs by investigating Schottky barrier height, Schottky barrier tunneling width, and contact resistance. Furthermore, we successfully fabricated p-type operating Ta2Pt3S8 FETs using a molybdenum trioxide (MoO3) layer as a high work function contact electrode. Finally, we achieved Ta2Pt3S8 nanowire rectifying diodes by creating a p-n junction with asymmetric contact electrodes of Cr and MoO3, demonstrating an ideality factor of 1.06. These findings highlight the electronic properties of Ta2Pt3S8, positioning it as a promising 1D vdW material for future nanoelectronics and functional vdW-based device applications.

Ultrahigh-Porosity MgO Microparticles for Heat-Energy Storage.

Continuous industrial development has increased the demand of energy. Inevitably, the development of energy sources is steadily progressing using various methods. Rather than establishing a new energy source, a system for storing waste heat generated by industry has now been accepted as a useful strategy. Among such systems, the hydration and dehydration reactions of MgO/Mg(OH)2  are eco-friendly, have relatively low toxicity and risk, and have a large reserves. Therefore, it is a promising candidate for a heat-storage system. In this study, ultrahigh-porosity particles are used to maximize the heat-storage efficiency of pure MgO. Due to its large surface area, the heat storage rate is 90.3% of the theoretical value and the reaction rate is very high. In addition, as structural collapse, likely to be caused by volume changes between reactions, is blocked as the porous region is filled and emptied, the cycle stability is secured. Ultrahigh-porosity MgO microparticles can be used to build eco-friendly heat-storage systems.

Enhanced ultra high frequency EMI shielding with controlled ITO nano-branch width via different tin material types.

The development of technologies for electromagnetic wave contamination has garnered attention. Among the various electromagnetic wave frequencies, for high frequencies such as those in the K and Ka ranges, there is a limitation of using only the properties of a single material. Therefore, it is necessary to improve the absorption coefficients by increasing the path of electromagnetic waves through internal scattering at an interface or a structure inside the material. Here, we accurately demonstrated the role of Sn in the growth of an indium tin oxide (ITO) nano-branch structure and grew high-density ITO nano-branches with the lowest thickness possible. Consequently, we obtained shielding efficiencies of 21.09 dB (K band) and 17.81 dB (Ka band) for a film with a thickness of 0.00364 mm. Owing to the significantly high specific shielding efficiency and low thickness and weight, it is expected to be applied in various fields.

Fabrication of a Field-Effect Transistor Based on 2D Novel Ternary Chalcogenide PdPS.

Two-dimensional (2D) palladium phosphide sulfide (PdPS) has garnered significant attention, owing to its exotic physical properties originating from the distinct Cairo pentagonal tiling topology. Nevertheless, the properties of PdPS remain unexplored, especially for electronic devices. In this study, we introduce the thickness-dependent electrical characteristics of PdPS flakes into fabricated field-effect transistors (FETs). The broad thickness variation of the PdPS flakes, ranging from 0.7-306 nm, is prepared by mechanical exfoliation, utilizing large bulk crystals synthesized via chemical vapor transport. We evaluate this variation and confirm a high electron mobility of 14.4 cm2 V-1 s-1 and Ion/Ioff > 107. Furthermore, the 6.8 nm-thick PdPS FET demonstrates a negligible Schottky barrier height at the gold electrode contact, as evidenced by the measurement of the temperature-dependent transfer characteristics. Consequently, we adjusted the Fowler-Nordheim tunneling mechanism to elucidate the charge-transport mechanism, revealing a modulated mobility variation from 14.4 to 41.2 cm2 V-1 s-1 with an increase in the drain voltage from 1 to 5 V. The present findings can broaden the understanding of the unique properties of PdPS, highlighting its potential as a 2D ternary chalcogenide in future electronic device applications.

Colloidal Synthesis of Ultrathin and Se-Rich V2Se9 Nanobelts as High-Performance Anode Materials for Li-Ion Batteries.

In this study, the one-dimensional (1D) material V2Se9 was successfully synthesized using a colloidal method with VO(acac)2 and Se powder as precursors in a 1-octadecene solvent. The obtained colloidally synthesized V2Se9 (C-V2Se9) has an ultrathin nanobelt shape and a 4.5 times higher surface area compared with the bulk V2Se9, which is synthesized in a solid-state reaction as previously reported. In addition, all surfaces of C-V2Se9 are exposed to Se atoms, which is advantageous for storing Li through the conversion reaction into the Li2Se phase. Herein, the electrochemical performance of the C-V2Se9 anode material is evaluated; thus, the novelty of C-V2Se9 as a Se-rich 1D anode material is verified. The C-V2Se9 electrode exhibits a reversible capacity of 893.21 mA h g-1 and a Coulombic efficiency of 97.82% at the 100th cycle and excellent structural stability. Compared with the bulk V2Se9 electrode, the outstanding electrochemical performance of C-V2Se9 is attributed to its ultrathin nanobelt shape, high surface area, shorter Li diffusion length, and more electrochemically active sites. This work indicates the great potential of the Se-rich 1D material, C-V2Se9, as a post-transition metal dichalcogenide material for high-performance LIBs.

MgO nano-facet embedded silver-based dielectric/metal/dielectric transparent electrode.

We replace Indium Tin Oxide (ITO) with an MgO nano-facet Embedded WO(3)/Ag/WO(3)(WAW) multilayer for electrodes of high efficiency OLEDs. WAW shows higher values for transmittance (93%) and conductivity (1.3×10(5) S/cm) than those of ITO. Moreover, WAW shows higher transmittance (92.5%) than that of ITO (86.4%) in the blue region (<500 nm). However, due to the large difference in refractive indices (n) of glass (n=1.55) and WO(3) (n=1.95), the incident light has a small critical angle (52°). Thus, the generated light is confined by the glass/WAW interface, resulting in low light outcoupling efficiency (~20%). This can be enhanced by using a nano-facet structured MgO (n=1.73) layer and a ZrO(2) (n=1.84) layer as a graded index layer. Using these optimized electrodes, ITO-free, OLEDs with various emission wavelengths have been produced. The luminance of OLEDs using MgO/ZrO(2)/WAW layers is enhanced by 24% compared to that of devices with ITO.

Organic Dispersion of Mo3Se3- Single-Chain Atomic Crystals Using Surface Modification Methods.

In this study, single-chain atomic crystals (SCACs), Mo3Se3-, which can be uniformly dispersed, with an atomically thin diameter of ∼0.6 nm were modified to disperse in an organic solvent. Various surfactants were chosen to provide steric hindrance to aqueous-dispersed Mo3Se3- by modifying the surface of Mo3Se3-. The organic dispersions of surface-modified Mo3Se3- SCACs in nonpolar solvent (toluene, benzene, and chloroform) were stable with a uniform diameter of 2 nm, and they have enhanced stability from oxidation (>10 days). With the surfactants that have a polystyrene tail group (PS-NH2), the surface-modified Mo3Se3- SCAC showed high compatibility with a polystyrene polymer matrix. Using the surface-modified Mo3Se3- SCAC, a homogeneous Mo3Se3-/polystyrene/toluene organogel was prepared. More importantly, the Mo3Se3-/polystyrene organogel exhibits significantly enhanced mechanical properties, with the improvement of 202.27% and 279.52% for tensile strength and elongation, respectively, compared with that of the pure organogel. The surface-modified Mo3Se3- had a similar structure with a polymer matrix, and the properties of the polymer can be improved even with a small addition of Mo3Se3-.

Liquid Precursor-Assisted Chemical Vapor Deposition of One-Dimensional van der Waals Material Nb2Se9: Tunable Growth for Room-Temperature Gas Sensors.

In this study, Nb2Se9, a one-dimensional (1D) material with van der Waals (vdWs) bonding, was synthesized by chemical vapor deposition (CVD). A liquid precursor was used to overcome the difficulty of controlling the length and density of Nb2Se9 by CVD due to the high melting point of Nb. Growth proceeded horizontally in a nano-ribbon shape on the substrate in the [100] direction, which had the most stable bonding distance, resulting in a preferred orientation of the (010) plane on the out-of-plane axis. Unlike that grown by conventional mechanical or chemical exfoliation, the nanoscale Nb2Se9 grown by CVD was uniform and did not have contaminants, such as dispersants, on its surface, meaning it could effectively induce reactions such as gas adsorption and desorption. It exhibited high sensitivity to NO2 gas adsorption at room temperature (27 °C), and its behavior was confirmed in a high-humidity environment. For the first time, this study demonstrated the possibility of synthesizing a vdWs bonding-based 1D material by CVD, which is expected to be widely used in a variety of low-dimensional materials and devices.

Colloidal synthesis of 1-D van der Waals material Nb2Se9: study of synergism of coordinating agent in a co-solvent system.

Low-dimensional Nb2Se9 nanocrystals were synthesised through a simple one-pot colloidal synthesis with C18 organic solvents (octadecane, oleylalcohol, octadecanethiol, octadecene (ODE), and oleylamine (OLA)) of varied terminal functional groups. The solvent with high reducing power facilitated the nucleation of the nanoparticle, lowering threshold concentration and broadening the concentration spectrum. As a solvent, reducing agent, and capping agent, ODE functions as a primary factor in the synthesis of high-quality Nb2Se9 nanorods. We further discuss the unique adhesion role of ODE under the co-solvent system and demonstrate morphology control through synergism between ODE and OLA, verified by the electrochemical measurements.

Transparent and Flexible Electromagnetic Interference Shielding Film Using ITO Nanobranches by Internal Scattering.

A transparent and flexible film capable of shielding electromagnetic waves over a wide range of frequencies (X and Ku bands, 8-18 GHz) is prepared. The electromagnetic wave shielding film is fabricated using the excellent transmittance, electrical conductivity, and thermal stability of indium tin oxide (ITO), a representative transparent conductive oxide. The inherent mechanical brittleness of oxide ceramics is overcome by adopting a nanobranched structure. In addition, mechanical stability is maintained even after repeated bending experiments (200 000 times). The produced transparent and flexible shielding film is applied to practical GHz devices (Wi-Fi and LTE devices), and signal sensitivity is confirmed to decrease. Therefore, it can be widely applied to various transparent and flexible electronic devices.

A study on the bio-applicability of aqueous-dispersed van der Waals 1-D material Nb2Se9 using poloxamer.

In this research, dispersion of a new type of one-dimensional inorganic material Nb2Se9, composed of van der Waals bonds, in aqueous solution for bio-application study were studied. To disperse Nb2Se9, which exhibits hydrophobic properties in water, experiments were carried out using a block copolymer (poloxamer) as a dispersant. It was confirmed that PPO, the hydrophobic portion of Poloxamer, was adsorbed onto the surface of Nb2Se9, and PEO, the hydrophilic portion, induced steric hinderance to disperse Nb2Se9 to a size of 10 nm or less. To confirm the adaptability of muscle cells C2C12 to the dispersed Nb2Se9 using poloxamer 188 as dispersant, a MTT assay and a live/dead assay were performed, demonstrating improvement in the viability and proliferation of C2C12 cells.

One-dimensional van der Waals stacked p-type crystal Ta2Pt3Se8 for nanoscale electronics.

Recently, ternary transition metal chalcogenides Ta2X3Se8 (X = Pd or Pt) have attracted great interest as a class of emerging one-dimensional (1D) van der Waals (vdW) materials. In particular, Ta2Pd3Se8 has been actively studied owing to its excellent charge transport properties as an n-type semiconductor and ultralong ballistic phonon transport properties. Compared to subsequent studies on the Pd-containing material, Ta2Pt3Se8, another member of this class of materials has been considerably less explored despite its promising electrical properties as a p-type semiconductor. Herein, we demonstrate the electrical properties of Ta2Pt3Se8 as a promising channel material for nanoelectronic applications. High-quality bulk Ta2Pt3Se8 single crystals were successfully synthesized by a one-step vapor transport reaction. Scanning Kelvin probe microscopy measurements were used to investigate the surface potential difference and work function of the Ta2Pt3Se8 nanoribbons of various thicknesses. Field-effect transistors fabricated on exfoliated Ta2Pt3Se8 nanoribbons exhibited moderate p-type transport properties with a maximum hole mobility of 5 cm2 V-1 s-1 and an Ion/Ioff ratio of >104. Furthermore, the charge transport mechanism of Ta2Pt3Se8 was analyzed by temperature-dependent transport measurements in the temperature range from 90 to 320 K. To include Ta2Pt3Se8 in a building block for modern 1D electronics, we demonstrate p-n junction characteristics using the electron beam doping method.

High Breakdown Current Density in Quasi-1D van der Waals Layered Material Ta2NiSe7.

We synthesized ternary composition chalcogenide Ta2NiSe7, a quasi-one-dimensional (Q1D) material with excellent crystallinity. To utilize the excellent electrical conductivity property of Ta2NiSe7, the breakdown current density (JBD) according to thickness change through mechanical exfoliation was measured. It was confirmed that as the thickness decreased, the maximum breakdown voltage (VBD) increased, and at 18 nm thickness, 35 MA cm-2 of JBD was measured, which was 35 times higher than that of copper, which is commonly used as an interconnect material. By optimization of the exfoliation process, it is expected that through a theoretical model fitting, the JBD can be increased to about 356 MA cm-2. It is expected that the low-dimensional materials with ternary compositions proposed through this experiment can be used as candidates for current-carrying materials that are required for the miniaturization of various electronic devices.