Manipulating terahertz guided wave excitation with Fabry-Perot cavity-assisted metasurfaces.

Metasurfaces are emerging as powerful tools for manipulating complex light fields, offering enhanced control in free space and on-chip waveguide applications. Their ability to customize refractive indices and dispersion properties opens up new possibilities in light guiding, yet their efficiency in exciting guided waves, particularly through metallic structures, is not fully explored. Here, we present a new method for exciting terahertz (THz) guided waves using Fabry-Perot (FP) cavity-assisted metasurfaces that enable spin-selective directional coupling and mode selection. Our design uses a substrate-free ridge silicon THz waveguide with air cladding and a supporting slab, incorporating placed metallic metasurfaces to exploit their unique interaction with the guided waves. With the silicon thin layer and air serving as an FP cavity, THz waves enter from the bottom of the device, thereby intensifying the impact of the metasurfaces. The inverse-structured complementary metasurface could enhance excitation performance. We demonstrate selective excitation of TE00 and TE10 modes with directional control, confirmed through simulations and experimental validations using a THz vector network analyzer (VNA) system. This work broadens the potential of metasurfaces for advanced THz waveguide technologies.

Continuously tunable silicon optical true-time delay lines with a large delay tuning range and a low delay fluctuation.

On-chip switchable optical true-time delay lines (OTTDLs) feature a large group delay tuning range but suffer from a discrete tuning step. OTTDLs with a large delay tuning range and a continuous tuning capability are highly desired. In this paper, we propose and experimentally demonstrate a silicon-based broadband continuously tunable OTTDL comprising a 7-bit delay line and a switch-based continuously tunable delay line. The group delay of the entire OTTDL can be continuously tuned from 0 to 1020.16 ps. A delay error within -1.27 ps to 1.75 ps, and a delay fluctuation of less than 2.69 ps in the frequency range of 2∼25 GHz are obtained. We analyze the causes of the delay fluctuation and its influence on beamforming. Moreover, we also propose a simplified non-invasive calibration method that can significantly reduce the complexity of the delay state calibration and can be easily extended to delay lines with more stages of optical switches. The high performance of our OTTDL chip and the calibration method drive practical applications of integrated OTTDLs.

Real-time reconfigurable on-chip photonic frequency decoder.

A group-delay-unit-based integrated silicon photonic integrated circuit (PIC) is employed as a reconfigurable analog radio frequency decoder, which provides a real-time temporal and spectral analysis of any arbitrary multi-tone signal in the micro- and mm-wave range. The circuit is based on cascaded Mach-Zehnder interferometer embedded silicon microring resonators as variable delay units. The temporal decoding of the multi-tone input signal is demonstrated by tuning the signal with respect to the ring resonator delay and resonance. A one-to-one conformal time-to-frequency mapping provides real-time spectral decoding of the signal under test without additional digital signal processing. The idea is validated by several experimental results with single-tone and two-tone input signals in a compact, low-power, silicon PIC. The proposed real-time temporal analog frequency decoder may be very intriguing for high-speed, low-latency wireless applications, such as autonomous driving and 6G.

Power-efficient polarization-insensitive tunable microring filter on a multi-layer Si3N4-on-SOI platform.

We develop and demonstrate a non-duplicate polarization-diversity tunable bandpass optical filter by leveraging the bi-directional transmission of add-drop dual-coupled microring resonators (MRRs) on a multi-layer Si3N4-on-silicon-on-insulator (SOI) platform. By using Euler-bends, we implement compact and low-loss Si3N4 MRRs with an equivalent bending radius of ∼38 µm. Fiber-to-fiber (on-chip) insertion loss of 4.3 dB (1.7 dB) with a low polarization-dependent loss of <0.5 dB and low differential group delay of <2.5 ps is achieved. The extinction ratio is more than 30 dB. The thermo-optic tuning efficiency of the Si3N4 MRRs is improved with a suspended micro-heater design. As a result, a wavelength tuning range of ∼2 nm and a 3-dB bandwidth tuning range of 20 GHz are experimentally demonstrated. The tuning efficiency is 33 pm/mW, which is ∼7.5 times higher than the previous design. This reconfigurable polarization-insensitive filter, with low loss, low cross talk, and high power efficiency, is highly promising for practical applications in optical communication and signal processing.

Silicon multi-mode micro-ring modulator for improved robustness to optical nonlinearity.

Due to the resonant nature and silicon's strong optical nonlinearity, the system's performance of silicon micro-ring modulators can be seriously affected by the input optical power. In this Letter, we proposed and experimentally demonstrated a multi-mode silicon micro-ring modulator to mitigate its optical nonlinear effects by operating in the TE1 mode. The TE1 mode features a high nonlinear threshold compared with the TE0 mode because of its larger waveguide loss and larger mode effective area. Under the condition of 10 mW optical input power, the resonance spectrum maintains a good symmetric Lorentz shape. The resonant wavelength shifts less than one resonance linewidth, showing an improved robustness to optical nonlinearity compared with regular silicon micro-ring modulators.

Ultrahigh extinction ratio silicon micro-ring modulator by MDM resonance for high speed PAM-4 and PAM-8 signaling.

Due to the difficulty of controlling the waveguide loss in the doping region, high-speed silicon micro-ring modulators usually have limited extinction ratio. In this work, we present a mode-division-multiplexing (MDM) resonance-enhanced silicon micro-ring modulator with an ultrahigh extinction ratio. We used a two-mode micro-ring resonator and a mode conversion circular structure to trap the light twice within a single micro-ring resonator. Proof-of-concept high extinction ratio up to 55 dB was obtained. 30 Gb/s PAM-8 and 50 Gb/s PAM-4 signaling with a bit error rate below the hard-decision forward error correction (HD-FEC) threshold were demonstrated with the fabricated modulator, indicating great potential for high-order pulse amplitude modulation (PAM).

Silicon mode-insensitive modulator for TE0 mode and TE1 mode.

Mode-division multiplexing (MDM), which could further increase the capacity and flexibility of the communication systems, has attracted much attention. In this Letter, we demonstrate a proof-of-principle silicon mode-insensitive modulator based on the balanced Mach-Zehnder interferometer that could realize modulation of both TE0 and TE1 modes using a horizontal PN junction. The PN junction is offset from the center of the waveguide to the n-type doped region to modulate both TE0 and TE1 modes effectively. An adiabatic directional coupler is used as a mode-insensitive 3-dB power splitter for both modes. A mode-insensitive thermal phase shifter is used to change the operation point of the modulator. On-off keying modulation at 32 Gb/s is successfully demonstrated for both TE0 and TE1 modes. This modulator can be potentially used in MDM-assisted optical sampling systems.

High-resolution on-chip Fourier transform spectrometer based on cascaded optical switches.

Chip-level spectrometers provide a stable and cost-effective solution for spectral analysis in various applications. Here we present a silicon on-chip digital Fourier transform spectrometer consisting of eight cascaded optical switches connected by delay waveguides. By configuring the states of the optical switches, this chip can realize 127 Mach-Zehnder interferometers with linearly increased optical path differences. A machine-learning regularization method is utilized to reconstruct the spectrum. Experimental results show that our chip can retrieve both sparse and broadband optical spectra with negligible reconstruction errors. The spectral resolution can be further improved by cascading more stages of optical switches. Our method has the advantages of compact size, high scalability, and high signal-to-noise ratio, making it a promising candidate for realizing miniaturized spectrometers.

New protocol for the R134a cryogen spray cooling assisted 1064-nm laser lipolysis.

Laser lipolysis is a promising body contouring technology. However, the skin tissue could be thermally damaged owing to the laser energy absorption by water, which limits the lipolysis efficiency. To protect skin tissue and improve the lipolysis effect, cryogen spray cooling is introduced and synergized with the pulsed laser irradiation aiming to propose a new therapy protocol. By simulating heat conduction in the skin after spray cooling assisted laser lipolysis, the temperature distribution in the skin tissue was obtained to analyze the tissue damage by the Arrhenius integral. After parameter optimization according to the damage threshold of skin and adipose tissue, a new protocol with high laser intensity and short time was proposed including 150-ms R134a spray cooling with spray distance of 30 mm, and 100 ms 1064 nm laser irradiation with energy density of 20 J/cm2, with a relaxation for 9.75 s. This cycle of 10 s can be repeated 90 to 150 times for a total of 15 to 25 min. Compared with previous treatment procedure, new protocol can increase the fat dissolution depth from 2 to 4.5 mm beneath the dermis with same order laser fluence.

Broadband continuously tunable microwave photonic delay line based on cascaded silicon microrings.

We present a novel broadband continuously tunable microwave photonic delay line consisting of a modulator, a four-stage microring resonator delay line, a tunable optical bandpass filter, and a photodetector. Unlike the traditional microring delay lines working at the on-resonant wavelength, the microring resonators in our chip work at the anti-resonant wavelengths, leading to a large delay bandwidth and a small delay ripple. The experimental results show that relative group delay can be continuously tuned from 0 to 160 ps for microwave frequencies in the range of 0 to 16 GHz. The delay ripple is less than 6.2 ps. These results represent an important step towards the realization of integrated continuously tunable delay lines demanded in broadband microwave phased array antennas.

Comparison of the phase change process in a GST-loaded silicon waveguide and MMI.

In the past decades, silicon photonic integrated circuits (PICs) have been considered a promising approach to solve the bandwidth bottleneck in optical communications and interconnections. Despite the rapid advances, large-scale PICs still face a series of technical challenges, such as large footprint, high power consumption, and lack of optical memory, resulting from the active tuning methods used to control the optical waves. These challenges can be partially addressed by combining chalcogenide phase change materials (PCMs) such as Ge2Sb2Te-5 (GST) with silicon photonics, especially applicable in reconfigurable optical circuit applications due to the nonvolatile nature of the GST. We systematically investigate the phase change process induced by optical and electrical pulses in GST-loaded silicon waveguide and multimode interferometer. Using optical pulse excitation to amorphize GST has a clear advantage in terms of operation speed and energy efficiency, while electrical pulse excitation is more suitable for large-scale integration because it does not require complex optical routing. This study helps us better understand the phase change process and push forward the further development of the Si-GST hybrid photonic integration platform, bringing in new potential applications.

Hybrid dual-gain tunable integrated InP-Si3N4 external cavity laser.

We present a hybrid dual-gain integrated external cavity laser with full C-band wavelength tunability. Two parallel reflective semiconductor optical amplifier gain channels are combined by a Y-branch in the Si3N4 photonic circuit to increase the optical gain. A Vernier ring filter is integrated in the Si3N4 photonic circuit to select a single longitudinal mode and meanwhile reduce the laser linewidth. The side-mode suppression ratio is ∼67 dB with a pump current of 75 mA. The linewidth of the unpackaged laser is 6.6 kHz under on-chip output power of 23.5 mW. The dual-gain operation of the laser gives higher output power and narrower linewidth compared to the single gain operation. It is promising for applications in optical communications and light detection and ranging systems.

Hybrid WDM-MDM transmitter with an integrated Si modulator array and a micro-resonator comb source.

We demonstrate a multi-channel silicon photonic transmitter based on wavelength division multiplexing (WDM) and mode division multiplexing (MDM). The light source is realized by a silicon nitride (Si3N4) Kerr frequency comb and optical modulation is realized by silicon electro-optic modulators. Three wavelengths and two modes are employed to increase the optical transmission capacity. The accumulated data rate reaches 150 Gb/s. The dense integration of WDM and MDM components with a compact optical comb source opens new avenues for the future high-capacity multi-dimensional optical transmission.

Focusing and defocusing switching of an indium selenide-silicon photonic metalens.

With a fixed geometric design, homogeneous change of Indium Selenide (In2Se3) switches the focusing length of a silicon photonic metalens between positive and negative values. This unique functionality of the hybrid metasurface is attributed to the fact that the silicon's refractive index is in the middle of the two convertible states in the optical phase change material. The infrared transparency of In2Se3 in both states enables near phase-only metasurface structures. The design is foundry compatible and feasible for implementing nonvolatile adaptive transformation optic systems on-chip.

Silicon reconfigurable mode-selective modulation for on-chip mode-multiplexed photonic systems.

Recently, optical mode-division multiplexing has drawn a lot of attention due to its ability to increase the optical communication capacity in one physical channel with a single wavelength carrier. In this Letter, we demonstrate reconfigurable mode-selective modulation which is potentially useful for on-chip mode-multiplexed photonic systems. The device consists of two mode exchangers and one TE1 mode modulator. The mode exchanger is based on a Mach-Zehnder interferometer that performs mode exchange between TE0 and TE1 modes. The TE1 mode modulator consists of a pair of 1×3/3×1 multimode interferometers acting as a mode (de)multiplexer. It only selectively modulates the TE1 mode while bypassing the TE0 mode. 32 Gb/s on-off keying (OOK) modulation is successfully demonstrated for both input TE0 and TE1 modes. This device can be used as a building block for on-chip multimode interconnect networks.

Integrated multi-beam optical phased array based on a 4 × 4 Butler matrix.

We design and demonstrate the first, to the best of our knowledge, silicon-based multi-beam optical phased array (MOPA), incorporating a 4×4 Butler matrix beamforming network. The one-dimensional end-fire array consists of 16 emitters at a uniform pitch together with their corresponding phase shifters and is shared among the beams to realize large-scale aliasing-free beam-steering at reduced complexity. Experimental results show that the device is capable of individual beam aliasing-free operation with a field of view up to 46°. The steering envelope shows a plateau where the peak intensities fluctuate within 0.5 dB. The beamforming and beam-steering performance are also evaluated for simultaneous multi-beam operation. Our work validates the feasibility of beamforming-network-based MOPAs, which are promising for applications including light detection and ranging and free-space optical communication.

Phase change material enabled 2 × 2 silicon nonvolatile optical switch.

Recently, large-scale photonic integrated circuits have seen rapid development. Optical switches are the elementary units used to realize optical routers and processors. However, the high static power and large footprint of silicon electro-optic and thermo-optic switches are becoming an obstacle for further scaling and high-density integration. In this Letter, we demonstrate a 2×2 nonvolatile silicon Mach-Zehnder optical switch enabled by low-loss phase change material Sb2S3. Changing the phase state of Sb2S3 can switch the optical transmission between the bar and cross paths. As no static power is required to maintain the phase state, it can find promising applications in optical switch matrices and reconfigurable optical circuits.

Automatic calibration of silicon ring-based optical switch powered by machine learning.

Calibrating ring-based optical switches automatically is strongly demanded in large-scale ring-based optical switch fabrics. Supported by a machine-learning algorithm, we build an artificial neural network (ANN) model to retrieve the parameters of a 2×2 dual-ring assisted Mach-Zehnder interferometer (DR-MZI) switch from the measured spectra for the first time. The calibration algorithm is verified on several devices. The operating wavelength of the optical switch can be tuned to any wavelength in a free spectral range with an accuracy better than 90 pm. The extinction ratio exceeds 20 dB at the cross- and bar-states with no more than 7 calibration cycles. The voltage difference between the automatic calibration and manual tuning is less than 30 mV, showing the high accuracy of the calibration algorithm. Our scheme provides a new way to calibrate ring-based devices that work as optical switch fabrics and tunable optical filters.

Contra-directional switching enabled by Si-GST grating.

We present the design, simulation, and experimental demonstration of a Si-GST grating assisted contra-directional coupler for optical switching. The effective refractive index of the GST-loaded silicon waveguide changes significantly when the GST is switched from the amorphous state to the crystalline state, allowing for large tuning of the propagation constant. The two coupled waveguides are designed to satisfy the phase-match condition only at the amorphous state to achieve Bragg reflection at the drop-port. Experimental results show that the device insertion loss is less than 5 dB and the extinction ratio is more than 15 dB with an operation bandwidth of 2.2 nm around the 1576 nm operating wavelength. Due to the nonvolatile property of GST, there is no static power consumption to maintain the two states. It is the first demonstration of a GST-enabled grating coupler that can be switched by phase change material.

Numerical investigation of the linearity of graphene-based silicon waveguide modulator.

We investigated the linearity of graphene-based silicon waveguide modulators used in microwave photonics links. A theoretical model was developed to systematically analyze the linearity performance for the second-order harmonic distortions (SHD2) and the third-order intermodulation distortions (IMD3). For the graphene-based silicon waveguide electro-absorption (EA) modulator, the distortions were suppressed through bias optimization. As a result, the maximal spurious free dynamic range (SFDR) obtained for SHD2 and IMD3 were 105.9 dB ·Hz1/2 and 117.8 dB·Hz2/3, respectively. For the graphene-based silicon waveguide electro-refraction (ER) phase modulator, SHD2 was fully eliminated through the push-pull modulation and quadrature biasing, while the remaining IMD3 term was linearized by the proper adjustment of the bias voltage and phase shifter length to obtain an ultrahigh SFDR of 130 dB ·Hz2/3. Moreover, the graphene-based silicon waveguide ER modulator is more compact and tolerant to bias errors than a pure silicon modulator. These results reveal that the graphene-based silicon waveguide EA and ER modulators can be potentially utilized in integrated microwave photonics.