Unraveling the strain tuning mechanism of interlayer excitons in WSe2/MoSe2heterostructure.

Atomically thin transition metal dichalcogenides (TMDs) exhibit rich excitonic physics, due to reduced dielectric screening and strong Coulomb interactions. Especially, some attractive topics in modern condensed matter physics, such as correlated insulator, superconductivity, topological excitons bands, are recently reported in stacking two monolayer (ML) TMDs. Here, we clearly reveal the tuning mechanism of tensile strain on interlayer excitons (IEXs) and intralayer excitons (IAXs) in WSe2/MoSe2heterostructure (HS) at low temperature. We utilize the cryogenic tensile strain platform to stretch the HS, and measure by micro-photoluminescence (µ-PL). The PL peaks redshifts of IEXs and IAXs in WSe2/MoSe2HS under tensile strain are well observed. The first-principles calculations by using density functional theory reveals the PL peaks redshifts of IEXs and IAXs origin from bandgap shrinkage. The calculation results also show the Mo-4d states dominating conduction band minimum shifts of the ML MoSe2plays a dominant role in the redshifts of IEXs. This work provides new insights into understanding the tuning mechanism of tensile strain on IEXs and IAXs in two-dimensional (2D) HS, and paves a way to the development of flexible optoelectronic devices based on 2D materials.

Detection band expansion by independently tunable double resonances in a long-wavelength dual-color QWIP.

Multi-resonance light coupling management is a promising way to expand the operating spectral ranges of optoelectronic devices. The classical strategies are either lack of independent tunability for each resonance or involved with complex fabrication. Here, we propose a new scheme for expanding the operating spectral range of an optoelectronic device through a dual-color active material integrated with a simple resonant waveguide structure. The TM waveguide mode and the SPP mode of the resonant waveguide structure are regulated to match the two active regions of the dual-color material both spectrally and spatially. Applying this scheme to a long-wavelength infrared quantum well photodetector, the absorption efficiencies at the two peak detection wavelengths of the dual-color quantum wells are both enhanced by more than 10 times compared with the case of a standard 45° edge facet coupled device with the same detection material. The simple light coupling structure is easy to accomplish and compatible with focal plane arrays. For thermal radiation detection, the absorption efficiency of the 300 K blackbody radiation by our dual-color detector is 83.8% higher than that by a single-color detector with the optimized structural parameters. Moreover, either polarization sensitive or polarization insensitive detection could be achieved in this dual-color infrared quantum well photodetector by using anisotropic or isotropic gratings.

Slowing Hot-Electron Relaxation in Mix-Phase Nanowires for Hot-Carrier Photovoltaics.

Hot carrier harvest could save 30% energy loss in solar cells. So far, however, it is still unreachable as the photoexcited hot carriers are short-lived, ∼1 ps, determined by a rapid relaxation process, thus invalidating any reprocessing efforts. Here, we propose and demonstrate a feasible route to reserve hot electrons for efficient collection. It is accomplished by an intentional mix of cubic zinc-blend and hexagonal wurtzite phases in III-V semiconductor nanowires. Additional energy levels are then generated above the conduction band minimum, capturing and storing hot electrons before they cool down to the band edges. We also show the superiority of core/shell nanowire (radial heterostructure) in extracting hot electrons. The strategy disclosed here may offer a unique opportunity to modulate hot carriers for efficient solar energy harvest.

Substitutionally Doped MoSe2 for High-Performance Electronics and Optoelectronics.

2D materials, of which the carrier type and concentration are easily tuned, show tremendous superiority in electronic and optoelectronic applications. However, the achievements are still quite far away from practical applications. Much more effort should be made to further improve their performance. Here, p-type MoSe2 is successfully achieved via substitutional doping of Ta atoms, which is confirmed experimentally and theoretically, and outstanding homojunction photodetectors and inverters are fabricated. MoSe2 p-n homojunction device with a low reverse current (300 pA) exhibits a high rectification ratio (104 ). The analysis of dark current reveals the domination of the Shockley-Read-Hall (SRH) and band-to-band tunneling (BTB) current. The homojunction photodetector exhibits a large open-circuit voltage (0.68 V) and short-circuit currents (1 µA), which is suitable for micro-solar cells. Furthermore, it possesses outstanding responsivity (0.28 A W-1 ), large external quantum efficiency (42%), and a high signal-to-noise ratio (≈107 ). Benefiting from the continuous energy band of homojunction, the response speed reaches up to 20 µs. Besides, the Ta-doped MoSe2 inverter exhibits a high voltage gain (34) and low power consumption (127 nW). This work lays a foundation for the practical application of 2D material devices.

Highly tunable doping in Ge quantum dots/graphene composite with distinct quantum dot growth evolution.

Quantum dots/graphene (QDs/Gr) composites have become the research hotspot recently due to their unique synergistic effect as optical absorption material for next-generation electronic and optoelectronic devices. In this work, Ge QDs/Gr composite is prepared by a simple and effective ion-beam sputtering deposition technique. The intact growth evolution process is detailly investigated by means of the effect of Ge deposition amount, which will induce the enhanced crystallinity in QDs and the reduced defects in graphene. Moreover, a feasible and inspiring strategy to effectively tune doping in graphene by artificial control through changing the deposition amount of Ge atoms on graphene is demonstrated. In addition, charge transfer and interaction strength at the interface of Ge QD and graphene is influenced via the oxygen defect in the QD surface, which is consistent with field-effect transistor test and first-principle calculations. The p-doping characteristics of graphene decorated by Ge QDs may have significant application prospects in energy band engineering of graphene-based building blocks for graphene-based composite development and near-infrared detector applications.

An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots.

We report the investigation of exciton dynamics in type-II self-assembled GaSb/GaAs quantum dots. The GaSb/GaAs quantum dots (QDs) were grown using a modified liquid phase epitaxy technique. Statistical size distributions of the uncapped QDs were investigated experimentally by field-emission scanning electron microscopy (SEM) and atomic force microscopy (AFM), and theoretically by an eight-band k  ·  p calculation, which demonstrated a dissolution effect. Furthermore, the low-temperature luminescence spectra of type-II GaSb/GaAs QDs with a thick capping layer exhibit well-resolved emission bands and LO-phonon-assisted transitions in the GaSb wetting layer. However, the luminescence lines quench at temperatures above 250 K, which is attributed to the weak quantum confinement of electrons participating in indirect exciton recombination. It was demonstrated that the room temperature stability of the excitons in type-II GaSb/GaAs QDs could be achieved by growing thin a capping layer, which provides strong quantum confinement in the conduction band and enhances the electron-hole Coulomb interaction, stabilizing the excitons.

DCT-net: Dual-domain cross-fusion transformer network for MRI reconstruction.

Current challenges in Magnetic Resonance Imaging (MRI) include long acquisition times and motion artifacts. To address these issues, under-sampled k-space acquisition has gained popularity as a fast imaging method. However, recovering fine details from under-sampled data remains challenging. In this study, we introduce a pioneering deep learning approach, namely DCT-Net, designed for dual-domain MRI reconstruction. DCT-Net seamlessly integrates information from the image domain (IRM) and frequency domain (FRM), utilizing a novel Cross Attention Block (CAB) and Fusion Attention Block (FAB). These innovative blocks enable precise feature extraction and adaptive fusion across both domains, resulting in a significant enhancement of the reconstructed image quality. The adaptive interaction and fusion mechanisms of CAB and FAB contribute to the method's effectiveness in capturing distinctive features and optimizing image reconstruction. Comprehensive ablation studies have been conducted to assess the contributions of these modules to reconstruction quality and accuracy. Experimental results on the FastMRI (2023) and Calgary-Campinas datasets (2021) demonstrate the superiority of our MRI reconstruction framework over other typical methods (most are illustrated in 2023 or 2022) in both qualitative and quantitative evaluations. This holds for knee and brain datasets under 4× and 8× accelerated imaging scenarios.

First-Principles Study of Structural and Electronic Properties of Monolayer PtX2 and Janus PtXY (X, Y = S, Se, and Te) via Strain Engineering.

In this work, the structural parameters and electronic properties of PtX2 and Janus PtXY (X, Y = S, Se, and Te) are studied based on the density functional theory. The phonon spectra and the Born criteria of the elastic constant of these six monolayers confirm their stability. All PtX2 and Janus PtXY monolayers show an outstanding stretchability with Young's modulus ranging from 61.023 to 82.124 N/m, about one-fifth that of graphene and half that of MoS2, suggesting highly flexible materials. Our first-principles calculations reveal that the pristine PtX2 and their Janus counterparts are indirect semiconductors with their band gap ranging from 0.760 to 1.810 eV at the Perdew-Burke-Ernzerhof level (1.128-2.580 eV at the Heyd-Scuseria-Ernzerhof level). By applying biaxial compressive and tensile strain, the electronic properties of all PtX2 and Janus PtXY monolayers are widely tunable. Under small compressive strain, PtX2 and Janus PtXY structures remain indirect semiconductors. PtTe2, PtSeTe, and PtSTe monolayers undergo a semiconducting to metallic transition when the strain reaches -6, -8, and -10%, respectively. Interestingly, there is a transition from the indirect semiconductor to a quasi-direct one for all PtX2 and Janus PtXY monolayers when the tensile strain is applied.

Reconfigurable, non-volatile neuromorphic photovoltaics.

The neural network image sensor-which mimics neurobiological functions of the human retina-has recently been demonstrated to simultaneously sense and process optical images. However, highly tunable responsivity concurrent with non-volatile storage of image data in the neural network would allow a transformative leap in compactness and function of these artificial neural networks. Here, we demonstrate a reconfigurable and non-volatile neuromorphic device based on two-dimensional semiconducting metal sulfides that is concurrently a photovoltaic detector. The device is based on a metal-semiconductor-metal (MSM) two-terminal structure with pulse-tunable sulfur vacancies at the M-S junctions. By modulating sulfur vacancy concentrations, the polarities of short-circuit photocurrent can be changed with multiple stable magnitudes. The bias-induced motion of sulfur vacancies leads to highly reconfigurable responsivities by dynamically modulating the Schottky barriers. A convolutional neuromorphic network is finally designed for image processing and object detection using the same device. The results demonstrated that neuromorphic photodetectors can be the key components of visual perception hardware.

Uniaxial Strain-Induced Tunable Mid-infrared Light Emission from Thin Film Black Phosphorus.

Strain engineering is a powerful tool that can modulate semiconductor device performance. Here, we demonstrate that the bandgap of thin film (∼40 nm) black phosphorus (bP) can be continuously tuned from 2.9 to 3.9 µm by applying an in-plane uniaxial strain, as evidenced by mid-infrared photoluminescence (PL) spectroscopy. The deduced bandgap strain coefficients are ∼103 meV %-1, which coincide with those obtained in few-layer bP. On the basis of first-principles calculations, the origin of the uniaxial tensile strain-induced PL enhancement is suggested to be due to the increase in both the effective mass ratio (me*/mh*) and the bandgap, leading to the increment of the radiative efficiency. Moreover, the mid-infrared PL emission remains perfectly linear-polarized along the armchair direction regardless of tensile or compressive strain. The highly tunable bandgap of bP in the mid-infrared regime opens up opportunities for the realization of mid-infrared light-emitting diodes and lasers using layered materials.

Monolayer WS2 Lateral Homosuperlattices with Two-dimensional Periodic Localized Photoluminescence.

Homojunctions and homosuperlattices are essential structures and have been widely explored for use in advanced electronic and optoelectronic devices. However, artificially manipulating crystalline phases in two-dimensional (2D) monolayers is still challenging, especially when attempting to engineer lateral homogeneous junctions in a single monolayer of transition metal dichalcogenides (TMDs). Herein, we demonstrate a lateral homosuperlattice (MLHS) with alternating 1T and 2H domains in a 2D WS2 monolayer plane. In MLHSs, the 2H domains, which are laterally localized and isolated by potential wells, manifest junction interfaces and irradiated photoluminescence (PL) with a lateral periodic distribution in the two-dimensional plane. The studies on MLHSs here can provide further understanding of lateral homojunctions and homosuperlattices in a monolayer plane, providing an alternative route to modulate optical and electronic behaviors in TMD monolayers.

Momentum-matching and band-alignment van der Waals heterostructures for high-efficiency infrared photodetection.

Two-dimensional (2D) infrared photodetectors always suffer from low quantum efficiency (QE) because of the limited atomically thin absorption. Here, we reported 2D black phosphorus (BP)/Bi2O2Se van der Waals (vdW) photodetectors with momentum-matching and band-alignment heterostructures to achieve high QE. The QE was largely improved by optimizing the generation, suppressing the recombination, and improving the collection of photocarriers. Note that momentum-matching BP/Bi2O2Se heterostructures in k-space lead to the highly efficient generation and transition of photocarriers. The recombination process can be largely suppressed by lattice mismatching-immune vdW interfaces. Furthermore, type II BP/Bi2O2Se vdW heterostructures could also assist fast transport and collection of photocarriers. By constructing momentum-matching and band-alignment heterostructures, a record-high QE of 84% at 1.3 micrometers and 76.5% at 2 micrometers have been achieved in BP/Bi2O2Se vdW photodetectors.

Controllable Doping in 2D Layered Materials.

For each generation of semiconductors, the issue of doping techniques is always placed at the top of the priority list since it determines whether a material can be used in the electronic and optoelectronic industry or not. When it comes to 2D materials, significant challenges have been found in controllably doping 2D semiconductors into p- or n-type, let alone developing a continuous control of this process. Here, a unique self-modulated doping characteristic in 2D layered materials such as PtSSe, PtS0.8 Se1.2 , PdSe2 , and WSe2 is reported. The varying number of vertically stacked-monolayers is the critical factor for controllably tuning the same material from p-type to intrinsic, and to n-type doping. Importantly, it is found that the thickness-induced lattice deformation makes defects in PtSSe transit from Pt vacancies to anion vacancies based on dynamic and thermodynamic analyses, which leads to p- and n-type conductance, respectively. By thickness-modulated doping, WSe2 diode exhibits a high rectification ratio of 4400 and a large open-circuit voltage of 0.38 V. Meanwhile, the PtSSe detector overcomes the shortcoming of large dark-current in narrow-bandgap optoelectronic devices. All these findings provide a brand-new perspective for fundamental scientific studies and applications.

Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition.

Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W-1 (at 1550-nm laser) and the blackbody responsivity of 5.19 A W-1 were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition-grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.

Air-Stable Low-Symmetry Narrow-Bandgap 2D Sulfide Niobium for Polarization Photodetection.

Low-symmetry 2D materials with unique anisotropic optical and optoelectronic characteristics have attracted a lot of interest in fundamental research and manufacturing of novel optoelectronic devices. Exploring new and low-symmetry narrow-bandgap 2D materials will be rewarding for the development of nanoelectronics and nano-optoelectronics. Herein, sulfide niobium (NbS3 ), a novel transition metal trichalcogenide semiconductor with low-symmetry structure, is introduced into a narrowband 2D material with strong anisotropic physical properties both experimentally and theoretically. The indirect bandgap of NbS3 with highly anisotropic band structures slowly decreases from 0.42 eV (monolayer) to 0.26 eV (bulk). Moreover, NbS3 Schottky photodetectors have excellent photoelectric performance, which enables fast photoresponse (11.6 µs), low specific noise current (4.6 × 10-25 A2 Hz-1 ), photoelectrical dichroic ratio (1.84) and high-quality reflective polarization imaging (637 nm and 830 nm). A room-temperature specific detectivity exceeding 107 Jones can be obtained at the wavelength of 3 µm. These excellent unique characteristics will make low-symmetry narrow-bandgap 2D materials become highly competitive candidates for future anisotropic optical investigations and mid-infrared optoelectronic applications.

Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability.

A long-wavelength infrared photodetector based on two-dimensional materials working at room temperature would have wide applications in many aspects in remote sensing, thermal imaging, biomedical optics, and medical imaging. However, sub-bandgap light detection in graphene and black phosphorus has been a long-standing scientific challenge because of their low photoresponsivity, instability in the air, and high dark current. In this study, we report a highly sensitive, air-stable, and operable long-wavelength infrared photodetector at room temperature based on PdSe2 phototransistors and their heterostructure. A high photoresponsivity of ∼42.1 AW-1 (at 10.6 µm) was demonstrated, which is an order of magnitude higher than the current record of platinum diselenide. Moreover, the dark current and noise power density were suppressed effectively by fabricating a van der Waals heterostructure. This work fundamentally contributes to establishing long-wavelength infrared detection by PdSe2 at the forefront of long-IR two-dimensional-materials-based photonics.

Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire.

One-dimensional InAs nanowire (NW)-based photodetectors have been widely studied due to their potential application in mid-wavelength infrared (MWIR) photon detection. However, the limited performance and complicated photoresponse mechanism of InAs NW-based photodetectors have held back their true potential for real application. In this study, we developed ferroelectric polymer P(VDF-TrFE)-coated InAs NW-based photodetectors and demonstrated that the electrostatic field caused by polarized ferroelectric materials modifies the surface electron-hole distribution as well as the band structure of InAs NWs, resulting in ultrasensitive photoresponse and a wide photodetection spectral range. Our single InAs NW photodetectors exhibit a high responsivity ( R) of 1.6 × 104 A W-1 as well as a corresponding detectivity ( D*) of 1.4 × 1012 cm·Hz1/2 W-1 at a light wavelength of 3.5 µm without an applied gate voltage, ∼3-4 orders higher than the maximum value of photoresponsivity reported or commercially used MWIR photodetectors. Moreover, our device shows below band gap photoresponse for 4.3 µm MWIR light with R of 9.6 × 102 A W-1 as well as a corresponding D* of ∼8.5 × 1010 cm·Hz1/2 W-1 at 77 K. Our study shows that this approach is promising for fabrication of high-performance NW-based photodetectors for MWIR photon detection.

Arrayed Van Der Waals Broadband Detectors for Dual-Band Detection.

An advanced visible/infrared dual-band photodetector with high-resolution imaging at room temperature is proposed and demonstrated for intelligent identification based on the 2D GaSe/GaSb vertical heterostructure. It resolves the challenges of producing large-scale 2D growth, achieving fast response speed, outstanding detectivity, and lower manufacture cost, which are the main obstacles for industrialization of 2D-materials-based photodetection.

Emission energy, exciton dynamics and lasing properties of buckled CdS nanoribbons.

We report the modulation of emission energy, exciton dynamics and lasing properties in a single buckled CdS nanoribbon (NR) by strain-engineering. Inspired by ordered structure fabrication on elastomeric polymer, we develop a new method to fabricate uniform buckled NRs supported on polydimethylsiloxane (PDMS). Wavy structure, of which compressive and tensile strain periodically varied along the CdS NR, leads to a position-dependent emission energy shift as large as 14 nm in photoluminescence (PL) mapping. Both micro-PL and micro-reflectance reveal the spectral characteristics of broad emission of buckled NR, which can be understood by the discrepancy of strain-induced energy shift of A- and B-exciton of CdS. Furthermore, the dynamics of excitons under tensile strain are also investigated; we find that the B-exciton have much shorter lifetime than that of redshifted A-exciton. In addition, we also present the lasing of buckled CdS NRs, in which the strain-dominated mode selection in multi-mode laser and negligible mode shifts in single-mode laser are clearly observed. Our results show that the strained NRs may serve as new functional optical elements for flexible light emitter or on-chip all-optical devices.

Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures.

We demonstrate the type-II staggered band alignment in MoTe2/MoS2 van der Waals (vdW) heterostructures and an interlayer optical transition at ∼1.55 µm. The photoinduced charge separation between the MoTe2/MoS2 vdW heterostructure is verified by Kelvin probe force microscopy (KPFM) under illumination, density function theory (DFT) simulations and photoluminescence (PL) spectroscopy. Photoelectrical measurements of MoTe2/MoS2 vdW heterostructures show a distinct photocurrent response in the infrared regime (1550 nm). The creation of type-II vdW heterostructures with strong interlayer coupling could improve our fundamental understanding of the essential physics behind vdW heterostructures and help the design of next-generation infrared optoelectronics.