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Near-unity photoluminescence quantum yield in MoS2.
Amani, Matin; Lien, Der-Hsien; Kiriya, Daisuke; Xiao, Jun; Azcatl, Angelica; Noh, Jiyoung; Madhvapathy, Surabhi R; Addou, Rafik; KC, Santosh; Dubey, Madan; Cho, Kyeongjae; Wallace, Robert M; Lee, Si-Chen; He, Jr-Hau; Ager, Joel W; Zhang, Xiang; Yablonovitch, Eli; Javey, Ali.
Afiliação
  • Amani M; Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
  • Lien DH; Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA. Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of
  • Kiriya D; Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
  • Xiao J; National Science Foundation Nanoscale Science and Engineering Center, University of California, Berkeley, Berkeley, CA 94720, USA. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
  • Azcatl A; Department of Materials Science and Engineering, University of Texas, Dallas, Richardson, TX 75080, USA.
  • Noh J; Department of Materials Science and Engineering, University of Texas, Dallas, Richardson, TX 75080, USA.
  • Madhvapathy SR; Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
  • Addou R; Department of Materials Science and Engineering, University of Texas, Dallas, Richardson, TX 75080, USA.
  • KC S; Department of Materials Science and Engineering, University of Texas, Dallas, Richardson, TX 75080, USA.
  • Dubey M; Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD 20723, USA.
  • Cho K; Department of Materials Science and Engineering, University of Texas, Dallas, Richardson, TX 75080, USA.
  • Wallace RM; Department of Materials Science and Engineering, University of Texas, Dallas, Richardson, TX 75080, USA.
  • Lee SC; Department of Electrical Engineering, Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan, Republic of China.
  • He JH; Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
  • Ager JW; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
  • Zhang X; National Science Foundation Nanoscale Science and Engineering Center, University of California, Berkeley, Berkeley, CA 94720, USA. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA. Department of Physics, King Abdulaziz University, Jeddah 21589, Saudi Arabia
  • Yablonovitch E; Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
  • Javey A; Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA. ajavey@eecs.berkeley.edu.
Science ; 350(6264): 1065-8, 2015 Nov 27.
Article em En | MEDLINE | ID: mdl-26612948
Two-dimensional (2D) transition metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure of merit, the room-temperature photoluminescence quantum yield (QY), is extremely low. The prototypical 2D material molybdenum disulfide (MoS2) is reported to have a maximum QY of 0.6%, which indicates a considerable defect density. Here we report on an air-stable, solution-based chemical treatment by an organic superacid, which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by more than two orders of magnitude. The treatment eliminates defect-mediated nonradiative recombination, thus resulting in a final QY of more than 95%, with a longest-observed lifetime of 10.8 ± 0.6 nanoseconds. Our ability to obtain optoelectronic monolayers with near-perfect properties opens the door for the development of highly efficient light-emitting diodes, lasers, and solar cells based on 2D materials.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article País de afiliação: Estados Unidos
Texto completo
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article País de afiliação: Estados Unidos