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Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2 Heterostructure.
Pandey, Tribhuwan; Nayak, Avinash P; Liu, Jin; Moran, Samuel T; Kim, Joon-Seok; Li, Lain-Jong; Lin, Jung-Fu; Akinwande, Deji; Singh, Abhishek K.
Afiliação
  • Pandey T; Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India.
  • Nayak AP; Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, 78712, USA.
  • Liu J; Department of Geological Sciences, The University of Texas at Austin, Austin, TX, 78712, USA.
  • Moran ST; Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, 78712, USA.
  • Kim JS; Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, 78712, USA.
  • Li LJ; Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955, Saudi Arabia.
  • Lin JF; Department of Geological Sciences, The University of Texas at Austin, Austin, TX, 78712, USA.
  • Akinwande D; Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, 201203, P. R. China.
  • Singh AK; Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, 78712, USA.
Small ; 12(30): 4063-9, 2016 Aug.
Article em En | MEDLINE | ID: mdl-27323330
A unique way of achieving controllable, pressure-induced charge transfer doping in the graphene/MoS2 heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa(-1) as a function of applied hydrostatic pressure, leading to heavy p-type doping in graphene. The doping was confirmed by I2D /IG measurements.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Índia

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Índia