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The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition.
Ding, Xingwei; Qin, Cunping; Song, Jiantao; Zhang, Jianhua; Jiang, Xueyin; Zhang, Zhilin.
Afiliação
  • Ding X; Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai, 200070, People's Republic of China.
  • Qin C; School of Mechatronics and Automation, Shanghai University, Shanghai, 200072, China.
  • Song J; School of Mechatronics and Automation, Shanghai University, Shanghai, 200072, China.
  • Zhang J; Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai, 200070, People's Republic of China.
  • Jiang X; Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai, 200070, People's Republic of China. dxw1026@126.com.
  • Zhang Z; School of Mechatronics and Automation, Shanghai University, Shanghai, 200072, China. dxw1026@126.com.
Nanoscale Res Lett ; 12(1): 63, 2017 Dec.
Article em En | MEDLINE | ID: mdl-28116611

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article